| 563 - 566 |
Influence of the ferroelectric-electrode interface on the characteristics of MFIS-FETs
Zhang J, Tang MH, Tang JX, Yang F, Xu HY, Zhao WF, Zhou YC |
| 567 - 570 |
Degradation of high power LEDs at dynamic working conditions
Yang LQ, Hu JZ, Shin MW |
| 571 - 573 |
Imaging of field-effect transistors by focused terahertz radiation
Veksler DB, Muravjov AV, Kachorovskii VY, Elkhatib TA, Salama KN, Zhang XC, Shur MS |
| 574 - 577 |
Current transport of GaAsSb-based DHBTs with different emitter structures
Pan CT, Wang CM, Hsin YM, Zhu HJ, Kuo JM, Kao YC |
| 578 - 583 |
The influence of morphologies and doping of nanostructured ZnO on the field emission behaviors
Zhang ZS, Huang JY, He HP, Lin SS, Tang HP, Lu HM, Ye ZZ |
| 584 - 589 |
Accurate analytical modelling of cosmic ray induced failure rates of power semiconductor devices
Bauer FD |
| 590 - 598 |
Controlled on-chip heat transfer for directed heating and temperature reduction
Dilli Z, Akturk A, Goldsman N, Metze G |
| 599 - 606 |
Impact of forward and reverse deep n-well biasing on the 1/f noise of 0.13 mu m n-channel MOSFETs in triple well technology
Png LC, Chew KW, Yeo KS |
| 607 - 612 |
A new analytical threshold voltage model for the doped polysilicon thin-film transistors
Wu WJ, Yao RH, Zheng XR |
| 613 - 620 |
Linear kink effect Lorentzians in the noise spectra of n- and p-channel fin field-effect transistors processed in standard and strained silicon-on-insulator substrates
Lukyanchikova N, Garbar N, Kudina V, Smolanka A, Claeys C, Simoen E |
| 621 - 625 |
Effect of UV/ozone treatment on hysteresis of pentacene thin-film transistor with polymer gate dielectric
Koo JB, Kang SY, You IK, Suh KS |
| 626 - 629 |
1/f Noise and trap density in n-channel strained-Si/SiGe modulation doped field effect transistors
Fobelets K, Rumyantsev SL, Hackbarth T, Shur MS |
| 630 - 634 |
Weak rectifying behaviour of p-SnS/n-ITO heterojunctions
Devika M, Reddy NK, Ramesh K, Patolsky F, Gunasekhar KR |
| 635 - 639 |
Ambipolar microcrystalline silicon transistors and inverters
Chan KY, Knipp D, Kirchhoff J, Gordijn A, Stiebig H |
| 640 - 643 |
Geometric effects of nanocrystals in nonvolatile memory using block copolymer nanotemplate
Lee JW, Ryu SW, Shin DO, Kim BH, Kim SO, Choi YK |
| 644 - 648 |
A single-poly EEPROM cell for embedded memory applications
Di Bartolomeo A, Rucker H, Schley P, Fox A, Lischke S, Na KY |
| 649 - 657 |
Compact model of short-channel MOSFETs considering quantum mechanical effects
Jayadeva GS, DasGupta A |
| 658 - 662 |
TCAD modeling and simulation of boron deactivation in NMOS carbon-implanted channel
Mok KRC, Benistant F, Teo RS, Chu S |
| 663 - 668 |
Stable aluminium ohmic contact to surface modified porous silicon
Kanungo J, Maji S, Saha H, Basu S |
| 669 - 673 |
Modeling of kink effect in polycrystalline silicon thin-film transistors
Deng WL, Zheng XR |
