Solid-State Electronics

Solid-State Electronics, Vol.54, No.6 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (12 articles)

613 - 615	Dependence of ohmic contact resistance on barrier thickness of AlN/GaN HEMT structures Deen DA, Storm DF, Katzer DS, Meyer DJ, Binari SC
616 - 620	DRAM concept based on the hole gas transient effect in a AlGaN/GaN HEMT Bawedin M, Uren MJ, Udrea F
621 - 627	Modeling effects of interface traps on the gate C-V characteristics of MOS devices on alternative high-mobility substrates Satter MM, Haque A
628 - 634	Linearity and mobility degradation in strained Si MOSFETs with thin gate dielectrics Alatise O, Olsen S, O'Neill A
635 - 641	Parameter extraction in polysilicon nanowire MOSFETs using new double integration-based procedure Ortiz-Conde A, Rey ADL, Liu W, Chen WC, Lin HC, Liou JJ, Muci J, Garcia-Sanchez FJ
642 - 645	Temperature influence on photo-leakage-current characteristics of a-Si:H thin-film transistor Tsao SW, Chang TC, Yang PC, Chen SC, Lu J, Wang MC, Huang CM, Wu WC, Kuo WC, Shi Y
646 - 649	Higher-kappa titanium dioxide incorporating LaAlO3 as dielectrics for MIM capacitors Cheng CH, Hsu HH, Chen PC, Liou BH, Chin A, Yeh FS
650 - 653	Tungsten-dual polymetal technology for low resistive gate electrode Kim YS, Sung MG, Park SK
654 - 659	Limits on vanadium oxide Mott metal-insulator transition field-effect transistors Hormoz S, Ramanathan S
660 - 664	Over 100 A operation normally-off AlGaN/GaN hybrid MOS-HFET on Si substrate with high-breakdown voltage Kambayashi H, Satoh Y, Ootomo S, Kokawa T, Nomura T, Kato S, Chow TSP
665 - 670	Impact of parameter extraction methodology on variances of extracted parameter values Milovanovic V, van der Toorn R
671 - 674	Hall mobility reduction in single-crystalline silicon gradually compensated by thermal donors activation Veirman J, Dubois S, Enjalbert N, Garandet JP, Heslinga DR, Lemiti M