Solid-State Electronics

Solid-State Electronics, Vol.44, No.7 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (35 articles)

1127 - 1133	Modelling of heterojunction acoustic charge transport devices Edjeou T, Gryba T, Zhang V, Sadaune V, Lefebvre JE
1135 - 1143	Hydrodynamic modeling of avalanche breakdown in a gate overvoltage protection structure Knaipp M, Kanert W, Selberherr S
1145 - 1156	PREDICTMOS - a predictive compact model of small-geometry MOSFETs for circuit simulation and device scaling calculations Klos A, Kostka A
1157 - 1161	Forward turn-on and reverse blocking characteristics of GaN Schottky and p-i-n rectifiers Zhang AP, Dang G, Ren F, Han J, Cho H, Pearton SJ, Chyi JI, Nee TE, Lee CM, Chuo CC, Chu SNG
1163 - 1168	Low temperature microcrystalline silicon thin film resistors on glass substrates Krishnan AT, Bae S, Fonash SJ
1169 - 1172	Effects of ex situ annealing on electrical characteristics of p-n-p AlGaAs/InGaAsN/GaAs double heterojunction bipolar transistors Li PW, Li NY, Hou HQ
1173 - 1177	Fabrication and electrical characterization of 4H-SiC p(+)-n-n(+) diodes with low differential resistance Vassilevski K, Zekentes K, Constantinidis G, Strel'chuk A
1179 - 1186	Low resistivity ohmic titanium carbide contacts to n- and p-type 4H-silicon carbide Lee SK, Zetterling CM, Ostling M, Palmquist JP, Hogberg H, Jansson U
1187 - 1189	A novel channel resistance ratio method for effective channel length and series resistance extraction in MOSFETs Niu GF, Mathew SJ, Cressler JD, Subbanna S
1191 - 1195	The current-position response of a-Si : H thin film position sensitive detector and the R-load, R-TCO effects on it Gnanvo K, Wu ZY, Labouret A
1197 - 1202	Charge transport mechanisms in HgMnTe photodiodes with ion etched p-n junctions Kosyachenko LA, Rarenko IM, Sun WG, Lu ZX
1203 - 1208	Effect of thermal stability of GaN epi-layer on the Schottky diodes Lee KN, Cao XA, Abernathy CR, Pearton SJ, Zhang AP, Ren F, Hickman R, Van Hove JM
1209 - 1212	Picosecond response of optical nonlinearity in a GaAs/AlGaAs asymmetric triple quantum well structure Ahn HS, Sawaki N
1213 - 1218	A local charge control technique to improve the forward bias safe operating area of LIGBT Hardikar S, Cao G, Xu Y, De Souza MM, Narayanan EMS
1219 - 1222	Analog performance and application of graded-channel fully depleted SOI MOSFETs Pavanello MA, Martino JA, Dessard V, Flandre D
1223 - 1228	Simulation and optimization of strained Si1-xGex buried channel p-MOSFETs Shi ZH, Chen XD, Onsongo D, Quinones EJ, Banerjee SK
1229 - 1233	GaN/SiC heterojunction bipolar transistors Torvik JT, Pankove JI, Van Zeghbroeck B
1235 - 1238	Monolithic photoreceiver constructed with InGaP/GaAs/InGaP MSM photodetectors and conventional GaAs MESFETs Doong MS, Liu DS, Lee CT
1239 - 1245	Flicker noise in deep submicron nMOS transistors Lukyanchikova N, Garbar N, Petrichuk M, Simoen E, Claeys C
1247 - 1253	Validation of the small-signal model of a forward-biased p-n junction diode Kumar PR, Sharma P, Patil MB
1255 - 1259	Simulation of GaN/AlGaN heterojunction bipolar transistors: part I -npn structures Cao XA, Van Hove JM, Klaassen JJ, Polley CJ, Wowchak AM, Chow PP, King DJ, Zhang AP, Dang G, Monier C, Pearton SJ, Ren F
1261 - 1265	Simulation of GaN/AlGaN heterojunction bipolar transistors: part II -pnp structures Cao XA, Van Hove JM, Klaassen JJ, Polley CJ, Wowchak AM, Chow PP, King DJ, Zhang AP, Dang G, Monier C, Pearton SJ, Ren F
1267 - 1274	A simulation study on pseudomorphic high electron mobility transistors (pHEMT) fabricated using the GaInP/InGaAs material system Yoon SF, Kam AHT, Gay BP, Zheng HQ
1275 - 1280	Simulation of interference patterns in solid-state biprism devices Hansson BAM, Machida N, Furuya K, Wernersson LE, Samuelson L
1281 - 1287	Numerical simulation of small-signal microwave performance of 4H-SIC MESFET Huang MW, Mayergoyz ID, Goldsman N
1289 - 1292	A comparison between leakage currents in thin gate oxides subjected to X-ray radiation and electrical stress degradation Cho BJ, Kim SJ, Ling CH, Joo MS, Yeo IS
1293 - 1296	Consequences of space dependence of effective mass in quantum wires Borovitskaya E, Shur MS
1297 - 1303	Novel diode-chain triggering SCR circuits for ESD protection Jang SL, Gau MS, Lin JK
1305 - 1314	A non-local gate current and oxide trapping charge generation model for lightly doped drain and single-drain nMOSFETs Jang SL, Sheu CJ
1315 - 1320	Amorphous/crystalline silicon two terminal photodetector Tucci M, DeRosa R
1321 - 1324	Behavior of the drain leakage current in metal-induced laterally crystallized thin film transistors Bhat GA, Kwok HS, Wong M
1325 - 1330	Avalanche injection of hot holes in the gate oxide of LDMOS transistors Manzini S, Gallerano A
1331 - 1333	Analytical modeling of pnp InP/InGaAs heterojunction bipolar transistors Datta S, Roenker KP, Cahay MM, Lunardi LM
1335 - 1339	Characterization and modeling of threshold voltage shift due to quantum mechanical effects in pMOSFET Ma YT, Liu LT, Yu ZP, Li ZJ
1341 - 1341	Room temperature annealing of 5.48 MeV He induced defect in p (+) n and n (+) p InP grown by metal-organic chemical vapour deposition (vol 44, pg 639, 2000) Khan A