Solid-State Electronics

Solid-State Electronics, Vol.52, No.7 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (20 articles)

998 - 1001	On-chip inductor above dummy metal patterns Hsu HM, Hsieh MM
1002 - 1007	The influence of junction depth on short channel effects in vertical sidewall MOSFETs Tan L, Buiu O, Hall S, Gill E, Uchino T, Ashburn P
1008 - 1010	4H-SiC BJTs with current gain of 110 Zhang QC, Agarwal A, Burka A, Geil B, Scozzie C
1011 - 1017	2 MeV ion irradiation effects on AlGaN/GaN HFET devices Sonia G, Richtera E, Brunner F, Denker A, Lossy R, Mai M, Lenk F, Bundesmann J, Pensl G, Schmidt J, Zeimer U, Wang L, Baskar K, Weyers M, Wurfl J, Trankle G
1018 - 1023	Comparison of heterostructure-emitter bipolar transistors (HEBTs) with InGaAs/GaAs superlattice and quantum-well base structures Tsai JH, Hsu IH, Li CM, Su NX, Wu YZ, Huang YS
1024 - 1031	Investigation of the non-linear input capacitance in LDMOS transistors and its contribution to IMD and phase distortion Bengtsson O, Vestling L, Olsson J
1032 - 1038	Thermionic field emission at electrodeposited Ni-Si Schottky barriers Kiziroglou ME, Li X, Zhukov AA, de Groot RAJ, de Groot CH
1039 - 1042	Dependence of backgating on the type of deep centres in the substrate of GaAsFETs Sengouga N, Abdeslam NA
1043 - 1046	Improved ESD properties by combining GaN-based light-emitting diode with MOS capacitor Chuang RW, Tsai PC, Su YX, Chu CH
1047 - 1051	Silicon on insulator avalanche-impact-ionization transistor with very low switching voltage from ON state to OFF state Dobrovolsky V, Sizov F, Cristoloveanu S, Pavljuk S
1052 - 1057	Calculation of cosmic ray limited maximum DC blocking voltages of high voltage silicon PIN diodes Bauef FD
1058 - 1063	Modeling of double-pi equivalent circuit for on-chip symmetric spiral inductors Tang Y, Liu B, Zhang L, Pan J, Yang LW, Wang Y
1064 - 1070	Compact model for short channel symmetric doped double-gate MOSFETs Cerdeira A, Iniguez B, Estrada M
1071 - 1074	Effects of surface passivation in porous silicon as H-2 gas sensor Ali NK, Hashim MR, Aziz AA
1075 - 1081	A proposal for enhancement of optical nonlinearity in GaN/AlGaN centered defect quantum box (CDQB) nanocrystal Rostami A, Saghai HR, Nejad HBA
1082 - 1087	Reduced band-gap due to phonons in SrTiO3 analyzed by ab initio calculations Wunderlich W
1088 - 1091	Surface-recombination-free InGaAs/InP HBTs and the base contact recombination Jin Z, Liu X, Prost W, Tegude FJ
1092 - 1098	Evaluating MOSFET harmonic distortion by successive integration of the I-V characteristics Salazar R, Ortiz-Conde A, Garcia-Sancliez FJ, Ho CS, Liou JJ
1099 - 1105	Influence of interface state charges on RF performance of LDMOS transistor Kashif A, Johansson T, Svensson C, Azam S, Arnborg T, Wahab Q
1106 - 1113	Determination of the average channel temperature of GaN MOSHFETs under continuous wave and periodic-pulsed RF operational conditions Deng YQ, Islam MDM, Gaevski M, Yang ZJ, Adivarahan V, Khan A