| 1079 - 1091 |
RF transistors: Recent developments and roadmap toward terahertz applications
Schwierz F, Liou JJ |
| 1092 - 1095 |
Statistical study on the temperature dependence of the turn-on characteristics for p-type LTPS TFTs
Kuo YF, Tai YH |
| 1096 - 1100 |
The obtaining of Al-Ti10W90-Si(n) Schottky diodes and investigation of their interface surface states density
Afandiyeva IM, Askerov SG, Abdullayeva LK, Aslanov SS |
| 1101 - 1108 |
Determining weak Fermi-level pinning in MOS devices by conductance and capacitance analysis and application to GaAs MOS devices
Martens K, Wang WF, Dimoulas A, Borghs G, Meuris M, Groeseneken G, Maes HE |
| 1109 - 1123 |
A sum-over-paths impulse-response moment-extraction algorithm for RLCM IC-interconnect networks
Le Coz YL, Krishna D, Petranovic DM |
| 1124 - 1128 |
Meyer-Neldel rule in Se and S-doped hydrogenated amorphous silicon
Sharma SK, Sagar P, Gupta H, Kumar R, Mehra RM |
| 1129 - 1132 |
High efficiency electrophosphorescent red organic light-emitting devices with double-emission layers
Xie W, Zhao Y, Li C, Liu SY |
| 1133 - 1138 |
Optical properties of alkaline-earth fluorohalides BaFX (X = Cl, Br, I) compounds
Reshak AH, Charifi Z, Baaziz H |
| 1139 - 1143 |
DC characterization of accumulation layer and bulk layer electron mobility in 4H-SiC depletion mode MOSFET
Zhao P, Rusli, Zhu CL, Xia JH |
| 1144 - 1152 |
Electro-thermal simulations of a microwave 4H-SiC MESFET on high purity semi-insulating substrate
Hjelmgren H, Andersson K, Eriksson J, Nilsson PA, Sudow M, Rorsman N |
