Journal of Vacuum Science & Technology A

Journal of Vacuum Science & Technology A, Vol.21, No.1 Entire volume, number list

ISSN: 0734-2101 (Print)

In this Issue (46 articles)

1 - 5	Growth of highly c-axis textured AIN films on Mo electrodes for film bulk acoustic wave resonators Lee SH, Lee JK, Yoon KH
6 - 13	Tribological properties of nitrogen-containing amorphous carbon film produced by dc plasma chemical vapor deposition Zhang W, Wazumi K, Tanaka A, Koga Y
14 - 18	Changes in photoluminescence of SrS : Ce induced by synchrotron radiation Sato F, Nakamura T, Tanaka K, Aihara S, Saito N, Inoue K, Yagi N, Mizuki J
19 - 24	Ionization-assisted deposition of strontium electron injection layer for organic light emitting diode Tanaka K, Usui H
25 - 31	Interaction of hydrogen-terminated Si(100), (110), and (111) surfaces with hydrogen plasma investigated by in situ real-time infrared absorption spectroscopy Shinohara M, Kuwano T, Akama Y, Kimura Y, Niwano M, Ishida H, Hatakeyama R
32 - 36	Particle-size dependence of alloy phase formation in isolated particles in the In-Sn system Lee JG, Mori H
37 - 46	Time-resolved investigation of the surface chemical modification of poly(ethylene naphthalate) by nitrogen plasma treatment Grace JM, Zhuang HK, Gerenser LJ, Freeman DR
47 - 58	Surface analysis by secondary-ion mass spectroscopy during etching with gas-cluster ion beam Fenner DB, Shao Y
59 - 61	Characterization of damage in reactive ion etched ZnTe Guo QX, Matsumoto Y, Tanaka T, Nishio M, Ogawa H
62 - 65	Texture development of CeO2 thin films deposited by ion beam assisted deposition Wang J, Fromknecht R, Linker G
66 - 75	Deposition, microstructure, and properties of nanocrystalline Ti(C,O,N) coatings Ruppi S, Larsson A
76 - 83	Structure and properties of anatase TiO2 thin films made by reactive electron beam evaporation van de Krol R, Goossens A
84 - 86	Effect of gas pressure on reactive pulsed laser ablation of a silicon target Inada M, Umezu I, Sugimura A
87 - 95	Monte Carlo simulation method for etching of deep trenches in Si by a SF6/O-2 plasma mixture Marcos G, Rhallabi A, Ranson P
96 - 105	Fundamental beam studies of radical enhanced atomic layer deposition of TiN Greer F, Fraser D, Coburn JW, Graves DB
106 - 109	Soft x-ray photoemission studies of Hf oxidation Suzer S, Sayan S, Holl MMB, Garfunkel E, Hussain Z, Hamdan NM
110 - 115	Nondestructive evaluation of alternative substrate quality using glancing-incidence x-ray diffraction and Raman spectroscopy Haugan HJ, Cain AM, Haas TW, Eyink KG, Eiting CJ, Tomich DH, Grazulis L, Busbee JD
116 - 126	Effect of neutral transport on the etch product lifecycle during plasma etching of silicon in chlorine gas Kiehlbauch MW, Graves DB
127 - 133	Temperature dependence in time-of-flight ion scattering spectra of LiTaO3(0001) and surface charge compensation of pyroelectric changes Fang ZL, Lui KM, Lau WM, Makarenko B, Rabalais JW
134 - 139	Critical Mg doping on the blue-light emission in p-type GaN thin films grown by metal-organic chemical-vapor deposition Kim K, Harrison JG
140 - 146	Epitaxial Ti1-xWxN alloys grown on MgO(001) by ultrahigh vacuum reactive magnetron sputtering: Electronic properties and long-range cation ordering Tian F, D'Arcy-Gall J, Lee TY, Sardela M, Gall D, Petrov I, Greene JE
147 - 155	Experimental and theoretical study of ion distributions near 300 mu m tall steps on rf-biased wafers in high density plasmas Woodworth JR, Miller PA, Shul RJ, Abraham IC, Aragon BP, Hamilton TW, Willison CG, Kim D, Economou DJ
156 - 166	Gas-efficient deposition of device-quality hydrogenated amorphous silicon using low gas flows and power modulated radio-frequency discharges Biebericher ACW, van der Weg WF, Rath JK, Akdim MR, Goedheer WJ
167 - 174	Thermal desorption study of selected austenitic stainless steels Bacher JP, Benvenuti C, Chiggiato P, Reinert MP, Sgobba S, Brass AM
175 - 179	Ion enhanced deposition by dual titanium and acetylene plasma immersion ion implantation Zeng ZM, Tian XB, Chu PK
180 - 185	Observation of copper atoms behavior in a vacuum arc discharge using laser spectroscopy Sung YM, Hayashi Y, Okraku-Yirenkyi Y, Otsubo M, Honda C, Sakoda T
186 - 195	Application of a sawtooth surface to accelerator beam chambers with low electron emission rate Suetsugu Y, Tsuchiya M, Nishidono T, Kato N, Satoh N, Endo S, Yokoyama T
196 - 200	Relative sputter rate measured in Cu/Co multilayer using Ar+ ion bombardment at grazing angle of incidence Barna A, Menyhard M, Zsolt G, Khanh NQ, Zalar A, Panjan P
201 - 205	Photoinduced second-harmonic generation in the indium tin oxide crystalline films Ebothe J, Kityk IV, El Hichou A, El Idrissi B, Addou M, Krasowski J
206 - 211	Plasma display panel vacuum in-line sealing technology by using a bubble-reduced frit Kwon SA, Yang HC, Whang KW
212 - 218	Preparation of clean GaAs(100) studied by synchrotron radiation photoemission Liu Z, Sun Y, Machuca F, Pianetta P, Spicer WE, Pease RFW
219 - 225	Preparation of clean InP(100) surfaces studied by synchrotron radiation photoemission Sun Y, Liu Z, Machuca F, Pianetta P, Spicer WE
226 - 233	Antimony and bismuth passivations of InP and characterizations of InP metal-insulator-semiconductor structures fabricated by plasma oxidation of Sb- and Bi-passivated InP Morikita S, Ikoma H
234 - 240	Kinetic energy influences on the growth mode of metal overlayers on dendrimer mediated substrates Curry M, Arrington D, Street SC, Xu FT, Barnard JA
241 - 250	Effect of changing the electrode gap on the spatial and electrical properties Of O-2/CF4 plasmas Steffens KL, Sobolewski MA
251 - 264	Modeling gas-phase nucleation in inductively coupled silane-oxygen plasmas Suh SM, Girshick SL, Kortshagen UR, Zachariah MR
265 - 273	Plasma and process characterization of high power magnetron physical vapor deposition with integrated plasma equipment-feature profile model Zhang D, Stout PJ, Ventzek PLG
274 - 283	Information depth and the mean escape depth in Auger electron spectroscopy and X-ray photoelectron spectroscopy Jablonski A, Powell CJ
284 - 293	Effects of Ar and O-2 additives on SiO2 etching in C4F8-based plasmas Li X, Ling L, Hua XF, Fukasawa M, Oehrlein GS, Barela M, Anderson HM
294 - 301	Supersonic jet epitaxy of gallium nitride using triethylgallium and ammonia McGinnis AJ, Thomson D, Banks A, Preble E, Davis RF, Lamb HH
302 - 309	Environmentally benign etching process of amorphous silicon and tungsten using species evaporated from polytetrafluoroethylene and fluorinated ethylene propylene Fujita K, Hori M, Goto T, Ito M
310 - 317	Influence of the Ar/N-2 ratio on the preferred orientation and optical reflectance of reactively sputter deposited titanium nitride thin films Banerjee R, Singh K, Ayyub P, Totlani MK, Suri AK
318 - 324	Is the effective accommodation coefficient of the spinning rotor gauge temperature dependent? Jousten K
325 - 331	Highly sensitive plasma absorption probe for measuring low-density high-pressure plasmas Nakamura K, Ohata M, Sugai H
332 - 339	Optimization of wear-resistant coating architectures using finite element analysis Gorishnyy TZ, Olson LG, Oden M, Aouadi SM, Rohde SL
340 - 343	Deposition of Bi4-xLaxTi3O12 films by direct liquid injection-metalorganic chemical vapor deposition Kang SW, Rhee SW