Journal of Vacuum Science & Technology A

Journal of Vacuum Science & Technology A, Vol.17, No.2 Entire volume, number list

ISSN: 0734-2101 (Print)

In this Issue (56 articles)

325 - 331	Molecularly engineered low temperature atomic layer growth of aluminum nitride on Si(100) Liu H, Rogers JW
332 - 337	Study on the transition temperature and phase formation sequence in TiZr silicides on Si(100) Cha TH, Yoon SH, Lee DK, Ryu H, Lee HJ, Kim CS, Jeon HT
338 - 341	Synthesis and characterization of In-Tl-Sb compounds grown by molecular beam epitaxy Antonell MJ, Abernathy CR, Acree WA, Berding MA, Sher A
342 - 346	Line-of-sight mass spectrometric study of As/Sb exchange on Sb-terminated and Ga-terminated GaSb (001) during molecular beam epitaxy Xie QH, Van Nostrand JE
347 - 353	Study of ohmic multilayer metal contacts to p-type ZnSe Rinta-Moykky A, Uusimaa P, Suhonen S, Valden M, Salokatve A, Pessa M, Likonen J
354 - 362	Ge(001): B gas-source molecular beam epitaxy: B surface segregation, hydrogen desorption, and film growth kinetics Kim H, Greene JE
363 - 372	Effects of surface chemical treatment on the formation of metal GaAs interfaces Shoji D, Shinohara M, Miura T, Niwano M, Miyamoto N
373 - 379	Model of interfacial thermal resistance of diamond composites Jagannadham K
380 - 384	Combined beam profile reflectometry, beam profile ellipsometry and ultraviolet-visible spectrophotometry for the characterization of ultrathin oxide-nitride-oxide films on silicon Leng JM, Opsal J, Aspnes DE
385 - 390	Water dissociation and selective absorption in the Zr[V0.5Fe0.5](2) gettering alloy: An x-ray photoemission spectroscopy investigation Narducci E, Kovac J, Ghezzi F, Venkataramani N, Sancrotti M
391 - 397	Analysis of silicon oxynitrides with spectroscopic ellipsometry and Auger spectroscopy, compared to analyses by Rutherford backscattering spectrometry and Fourier transform infrared spectroscopy Tompkins HG, Gregory RB, Deal PW, Smith SM
398 - 402	Transmission characteristics of multilayer structure in the soft x-ray spectral region and its application to the design of quarter-wave plates at 13 and 4.4 nm Kim DE, Lee SM, Jeon IJ
403 - 410	Investigation of electron-beam-induced phase transitions in amorphous aluminum trifluoride thin films using transmission electron microscopy Chen GS
411 - 420	Electron spectroscopic study of C-N bond formation by low-energy nitrogen ion implantation of graphite and diamond surfaces Gouzman I, Brener R, Hoffman A
421 - 424	A (NH4)(2)S-x-treated InSb(001) surface studied by using x-ray photoelectron spectroscopy, low-energy electron diffraction, and inverse photoemission spectroscopy Ichikawa S, Suzuki Y, Sanada N, Utsumi N, Yamaguchi T, Gong XY, Fukuda Y
425 - 432	Effects of helium dilution of TEOS-O-2-C2F6 gas mixture on plasma-enhanced chemical vapor deposition of fluorine-doped silicon oxide film Yoshimaru M, Koizumi S, Shimokawa K, Mori Y, Fukuda H, Matsuki N
433 - 444	Silicon nitride thin films deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition Lapeyrade M, Besland MP, Meva'a C, Sibai A, Hollinger G
445 - 452	Pulsed plasma-enhanced chemical vapor deposition from CH2F2, C2H2F4, and CHCIF2 Labelle CB, Gleason KK
453 - 457	Depth dependence of hydrogenation using electron cyclotron plasma in GaAs-on-Si solar cell structures Kakinuma H, Ueda T, Gotoh S, Akiyama M
458 - 462	Effect of postplasma treatment on characteristics of electron cyclotron resonance chemical vapor deposition SiOF films Lee SY, Park JW
463 - 469	Color, structure, and properties of TiN coatings prepared by plasma enhanced chemical vapor deposition Nah JW, Kim BJ, Lee DK, Lee JJ
470 - 479	Audio-frequency glow discharge for plasma chemical vapor deposition from organic compounds of the carbon family Tyczkowski J
480 - 492	Langmuir probe studies of a transformer-coupled plasma, aluminum etcher Malyshev MV, Donnelly VM, Kornblit A, Ciampa NA, Colonell JI, Lee JTC
493 - 499	Comparison of electron property measurements in an inductively coupled plasma made by Langmuir probe and laser Thomson scattering techniques Bowden MD, Kogano M, Suetome Y, Hori T, Uchino K, Muraoka K
500 - 505	Effects of rare gas dilution for control of dissociation, ionization, and radical density in fluorocarbon ultrahigh-frequency plasmas Samukawa S, Nakano T
506 - 516	Energy distribution of ions bombarding biased electrodes in high density plasma reactors Edelberg EA, Perry A, Benjamin N, Aydil ES
517 - 527	Planar laser-induced fluorescence of CF2 in O-2/CF4 and O-2/C2F6 chamber-cleaning plasmas: Spatial uniformity and comparison to electrical measurements Steffens KL, Sobolewski MA
528 - 534	Radial profile of energetic particles bombarding the substrate in a glow discharge Moreno-Marin JC, Abril I, Garcia-Molina R
535 - 539	Patterning of NiFe and NiFeCo in CO/NH3 high density plasmas Jung KB, Hong J, Cho H, Onishi S, Johnson D, Park YD, Childress JR, Pearton SJ
540 - 544	Formation of alkylsiloxane self-assembled monolayers on Si3N4 Sung MM, Kluth GJ, Maboudian R
545 - 551	Growth kinetics and relationship between structure and mechanical properties of a-C(N): H films deposited in acetylene-nitrogen atmospheres Jacobsohn LG, Freire FL, Franceschini DF, Lacerda MM, Mariotto G
552 - 554	Temperature dependence of SiO2/Si interfacial structure formed by radio-frequency magnetron sputter deposited SiO2 thin films on Si(111) Li BQ, Fujimoto T, Kojima I
555 - 563	Rectangular magnetron with full target erosion Musil J
564 - 570	Composition, structure, and dielectric tunability of epitaxial SrTiO3 thin films grown by radio frequency magnetron sputtering Wang X, Helmersson U, Madsen LD, Ivanov IP, Munger P, Rudner S, Hjorvarsson B, Sundgren JE
571 - 576	Comparison of the temperature dependence of the properties of ion beam and magnetron sputtered Fe films on (100) GaAs Bernstein SD, Wong TY, Tustison RW
577 - 583	Transmission electron microscopy study of platinum clusters on Al2O3/NiAl(110) under the influence of electron irradiation Nepijko SA, Klimenkov M, Kuhlenbeck H, Freund HJ
584 - 592	Polymerization of dual ion beam deposited CNx films with increasing N content Ng YM, Ong CW, Zhao XA, Choy CL
593 - 596	X-ray emission study of ion beam mixed Cu/Al films on polyimide Kurmaev EZ, Zatsepin DA, Winarski RP, Stadler S, Ederer DL, Moewes A, Fedorenko VV, Shamin SN, Galakhov VR, Chang GS, Whang CN
597 - 602	Study of stress evolution of boron nitride films prepared by ion assisted deposition Zeitler M, Sienz S, Rauschenbach B
603 - 607	Mechanical properties and residual stress in AlN/Al mixed films prepared by ion-beam-assisted deposition Watanabe Y, Uchiyama S, Nakamura Y, Li CL, Sekino T, Niihara K
608 - 610	Particle generation in W-Ti deposition Lo CF, Gilman P
611 - 614	Influence of crucible material and source alloy composition on thermally evaporated indium tin oxide layers Kerp HR, van Cleef MWM, Wit AB, Schropp REI, Galloni R, Lazzeri P
615 - 618	Velocity distribution of organic molecules emitted from effusion cells measured by time-of-flight technique Shimada T, Koide J, Cho KA, Koma A
619 - 623	Formation of beta-FeSi2 films by pulsed laser deposition using iron target Liu ZX, Okoshi M, Hanabusa M
624 - 629	Processing of porous GaAs at low frequency sparking Gudino-Martinez A, Rosendo E, Vidal MA, Navarro-Contreras H, Rojas-Lopez M
630 - 634	Ni content and grain size dependency of perovskite structure La0.8Sr0.2Co1-xNixO3-delta thin films for CO gas sensor Chiu CM, Chang YH
635 - 643	Photon stimulated desorption of an unbaked stainless steel chamber by 3.75 keV critical energy photons Herbeaux C, Marin P, Baglin V, Grobner O
644 - 649	Study of the surface morphology and gas sensing properties of WO3 thin films deposited by vacuum thermal evaporation Santucci S, Lozzi L, Passacantando M, Di Nardo S, Phani AR, Cantalini C, Pelino M
650 - 656	Measurements of trace gaseous ambient impurities on an atmospheric pressure rapid thermal processor Kondoh E, Vereecke G, Heyns MM, Maex K, Gutt T
657 - 661	Fluorination of Si(001)-2x1 surface near step edges: A mechanism for surface defect induced etching Srivastava D, Halicioglu T, Schoolcraft TA
662 - 664	Chemical and structural alterations induced at Kapton (R) surfaces by air exposures following atomic oxygen or 1 keV Ar+ treatments Wolan JT, Hoflund GB
665 - 667	Mechanism of nitrogen removal from silicon nitride by nitric oxide Blain MG
668 - 669	Transferable resistively heated metal evaporator for ultrahigh vacuum Drummond TG, Burgess JS, Wallace WT, Leavitt AJ
670 - 672	Photon shield for atomic hydrogen plasma sources Nienhaus H, Gergen B, Bergh HS, Majumdar A, Weinberg WH, McFarland EW
673 - 673	A convenient means of securing gaskets during assembly of vertically oriented knife-edge flanges McCabe PR, Utz AL
674 - 675	Ultrahigh vacuum dual fluid line rotatable connector Kaczer B, Jones DE, Im HJ, Pelz JP