Journal of Vacuum Science & Technology A

Journal of Vacuum Science & Technology A, Vol.25, No.2 Entire volume, number list

ISSN: 0734-2101 (Print)

In this Issue (32 articles)

L5 - L8	Crystalline alumina coatings by reactive ac magnetron sputtering Khanna A, Bhat DG
L9 - L11	Measurement of cooling rates of a superstrate cooling apparatus for an integrated in-line manufacturing process for thin-film photovoltaic devices Enzenroth RA, Barth KL, Sampath WS, Manivannan V
209 - 214	Influence of the external solenoid coil arrangement and excitation mode on plasma characteristics and target utilization in a dc-planar magnetron sputtering system Zhang XB, Xiao JQ, Pei ZL, Gong J, Sun C
215 - 220	Quantitative evaluation of film thickness uniformity: Application to off-axis magnetron source onto a rotating substrate Du XS, Jiang YD, Yu JS, Li J, Xie GZ
221 - 224	On the phase shift of reflection high energy electron diffraction intensity oscillations during Ge(001) homoepitaxy by molecular beam epitaxy Shin B, Leonard JP, McCamy JW, Aziz MJ
225 - 231	Effects of processing parameters on electroluminescence of rf magnetron sputter deposited ZnS : ErF3 DeVito DM, Argun AA, Law E, Davidson MR, Puga-Lambers M, Holloway PH
232 - 235	Growth and electronic and magnetic properties of alpha-FeSe films on GaAs (001) substrates Liu KW, Zhang JY, Li BH, Li BS, Shan CX, Lu YM, Shen DZ
236 - 245	Sputtering yield measurements at glancing incidence using a quartz crystal microbalance Kolasinski RD, Polk JE, Goebel D, Johnson LK
246 - 251	Cryotrapping assisted mass spectrometry for the analysis of complex gas mixtures Ferreira JA, Tabares FL
252 - 260	Thinning of N-face GaN (000(1)over bar) samples by inductively coupled plasma etching and chemomechanical polishing Rizzi F, Gu E, Dawson MD, Watson IM, Martin RW, Kang XN, Zhang GY
261 - 268	Metal-gate-induced reduction of the interfacial layer in Hf oxide gate stacks Goncharova LV, Dalponte M, Gustafsson T, Celik O, Garfunkel E, Lysaght PS, Bersuker G
269 - 274	Design and test of magnetic shields for quadrupole mass spectrometers Gervasini G, De Angeli M, Gittini G
275 - 280	Study of poly(vinylidene fluoride-trifluoroethylene) as a potential organic high K gate dielectric Li YX, Yan L, Shrestha RP, Yang D, Irene EA
281 - 284	Inverted-magnetron cold-cathode gauge in hybrid-discharge mode Mao HY, Wang Y
285 - 289	Oxidation suppression in ytterbium silicidation by Ti/TiN bicapping layer Jiang YL, Xie Q, Detavernier C, Van Meirhaeghe RL, Ru GP, Qu XP, Li BZ, Huang AP, Chu PK
290 - 303	On the interest of carbon-coated plasma reactor for advanced gate stack etching processes Ramos R, Cunge G, Joubert O
304 - 307	Ferroelectric BaTi2O5 thin film prepared by laser ablation Wang CB, Tu R, Gota T
308 - 311	Sticking probability of Ti atoms in magnetron sputtering deposition evaluated from the spatial distribution of Ti atom density Nafarizal N, Sasaki K
312 - 318	Competitive growth of Ta nanopillars during glancing angle deposition: Effect of surface diffusion Zhou CM, Gall D
319 - 323	Voltage oxide removal for plating: A new method of electroplating oxide coated metals in situ von Gutfeld RJ, West AC
324 - 329	Thermal-desorption behavior of MoS2-xOx solid-lubricant films sputtered on bearing rollers Koguma K, Ikeda M, Ota N, Matsuda K, Kaneta M
330 - 333	Anisotropic resistivity of thin films due to quantum electron scattering from anisotropic surface roughness Salvadori MC, Cattani M, Teixeira FS, Wiederkehr RS, Brown IG
334 - 339	Corrosion resistance of titanium ion implanted AZ91 magnesium alloy Liu CG, Xin YC, Tian XB, Zhao J, Chu PK
340 - 346	1.5-nm-thick silicon oxide gate films grown at 150 degrees C using modified reactive ion beam deposition with pyrolytic-gas passivation Yamada H
347 - 352	Auger electron spectroscopy of surfaces during exposure to gaseous discharges Guha J, Pu YK, Donnelly VM
353 - 359	Spatial profile monitoring of etch products of silicon in HBr/Cl-2/O-2/Ar plasma Tanaka J, Miya G
360 - 367	Effect of NH3 on the low pressure chemical vapor deposition of TiO2 film at low temperature using tetrakis(diethylamino)titanium and oxygen Song XM, Takoudis CG
368 - 377	Comparison of surface reactivity of CN, NH, and NH2 radicals during deposition of amorphous carbon nitride films from inductively coupled rf plasmas Li DP, Fisher ER
378 - 382	Effect of arc suppression on the physical properties of low temperature dc magnetron sputtered tantalum thin films Subrahmanyam A, Valleti K, Joshi SV, Sundararajan G
383 - 390	Thermal stability of TiAlN/TiAlON/Si3N4 tandem absorbers prepared by reactive direct current magnetron sputtering Barshilia HC, Selvakumar N, Rajam KS
391 - 400	Effect of oxygen concentration on the spike formation during reactive ion etching of SiC using the mixed gas plasma of NF3 and O-2 Tasaka A, Watanabe E, Kai T, Shimizu W, Kanatani T, Inaba M, Tojo T, Tanaka M, Abe T, Ogumi Z
401 - 408	Reflection rules preserving molecular flow-symmetry in an arbitrarily shaped pipe Kusumoto Y