445 - 451 |
Approach for a 3-Dimensional on-Chip Quantification by Secondary-Ion Mass-Spectrometry Analysis Gnaser H |
452 - 459 |
Effects of Oxygen Flooding on Sputtering and Ionization Processes During Ion-Bombardment Tian C, Vandervorst W |
460 - 464 |
Optimized Time-of-Flight Secondary-Ion Mass-Spectroscopy Depth Profiling with a Dual-Beam Technique Iltgen K, Bendel C, Benninghoven A, Niehuis E |
465 - 469 |
Nondestructive Depth Profiling in Auger-Electron Spectroscopy by Means of Partial Intensity Analysis Werner WS |
470 - 477 |
Growth and Characterization of Aluminum-Oxide Thin-Films for Evaluation as Reference Materials Gaarenstroom SW |
478 - 484 |
Factors Causing Deterioration of Depth Resolution in Auger-Electron Spectroscopy Depth Profiling of Multilayered Systems Satori K, Haga Y, Minatoya R, Aoki M, Kajiwara K |
485 - 492 |
Surface Chemical-Analysis - Comparing and Exchanging Data Seah MP |
493 - 499 |
Maxmind - Data-Storage and Evaluation Environment in Surface-Analysis Brandl KW, Stori H |
500 - 504 |
Nanometer-Scale Structure of Hectorite-Aniline Intercalates Porter TL, Thompson D, Bradley M, Eastman MP, Hagerman ME, Attuso JL, Votava AE, Bain ED |
505 - 512 |
X-Ray Photoelectron-Spectroscopy Study of the Chemical Interaction Between BN and Ti/Tin Seal S, Barr TL, Sobczak N, Benko E |
513 - 519 |
Metal Overlayers on Organic Functional-Groups of Self-Organized Molecular Assemblies .7. Ion-Scattering Spectroscopy and X-Ray Photoelectron-Spectroscopy of Cu/CH3 and Cu/COOCH3 Herdt GC, Czanderna AW |
520 - 525 |
Extracting More Chemical Information from X-Ray Photoelectron-Spectroscopy by Using Monochromatic X-Rays Sherwood PM |
526 - 531 |
Determination of the Surface Silanol Concentration of Amorphous Silica Surfaces Using Static Secondary-Ion Mass-Spectroscopy Dsouza AS, Pantano CG, Kallury KM |
532 - 537 |
Structure and Composition of Oxidized Aluminum on NiO(100) Imaduddin S, Lad RJ |
538 - 543 |
High-Resolution Electron-Energy-Loss Spectroscopy Study of Vapor-Deposited Polyaniline Thin-Films Plank RV, Dinardo NJ, Vohs JM |
544 - 549 |
Study of Poly(Ether Sulfone) Metal Interfaces by High-Energy X-Ray Photoelectron-Spectroscopy and X-Ray-Absorption Spectroscopy Tegen N, Morton SA, Watts JF |
550 - 558 |
Determination of Electron Temperatures in Plasmas by Multiple Rare-Gas Optical-Emission, and Implications for Advanced Actinometry Malyshev MV, Donnelly VM |
559 - 563 |
Direct Simulation Monte-Carlo Computation of Reactor-Feature Scale Flows Hudson ML, Bartel TJ |
564 - 567 |
Effects of the Axial External Magnetic-Field on the Reduction of the Dielectric Window Damage Due to Capacitive Coupling in the Inductively-Coupled Plasma Kim JH, Lee HJ, Kim YT, Whang KW, Joo JH |
568 - 572 |
Cfx(X=1-3) Radical Densities During Si, SiO2, and Si3N4 Etching Employing Electron-Cyclotron-Resonance Chf3 Plasma Miyata K, Hori M, Goto T |
573 - 578 |
Study of Shallow Silicon Trench Etch Process Using Planar Inductively-Coupled Plasmas Lee JH, Yeom GY, Lee JW, Lee JY |
579 - 584 |
Aspect Ratio Effects in Submicron Contact Hole Plasma-Etching Investigated by Quantitative X-Ray Photoelectron-Spectroscopy Legoff C, Peignon MC, Turban G, Bilhant R |
585 - 589 |
Hole-Size Dependent Highly Selective SiO2 Etching with a Hexthode-Type Wide-Gap Plasma Etcher Hosomi S, Omori N |
590 - 595 |
Physical Damage and Contamination by Magnetized Inductively-Coupled Plasmas and Effects of Various Cleaning and Annealing Methods Nam WJ, Yeom GY, Kim JH, Whang KW, Yoon JK |
596 - 603 |
Insight into the Dry-Etching of Fence-Free Patterned Platinum Structures Milkove KR, Wang CX |
604 - 609 |
Cl-2 Plasma-Etching of Si(100) - Damaged Surface-Layer Studied by in-Situ Spectroscopic Ellipsometry Layadi N, Donnelly VM, Lee JT, Klemens FP |
610 - 615 |
Kinetic-Study of Low-Energy Ion-Enhanced Polysilicon Etching Using Cl, Cl-2, and Cl+ Beam Scattering Chang JP, Sawin HH |
616 - 621 |
Ultrahigh-Vacuum Chemically Assisted Ion-Beam Etching System with a 3-Grid Ion-Source Hryniewicz JV, Chen YJ, Hsu SH, Lee CH, Porkolab GA |
622 - 625 |
Dry-Etching of InGaP in Magnetron Enhanced BCl3 Plasmas Mclane GF, Wood MC, Eckart DW, Lee JW, Lee KN, Pearton SJ, Abernathy CR |
626 - 632 |
Anisotropic Etching of InP with Low Sidewall and Surface-Induced Damage in Inductively-Coupled Plasma-Etching Using Sicl4 Etrillard J, Ossart P, Patriarche G, Juhel M, Bresse JF, Daguet C |
633 - 637 |
High-Density Plasma-Etching of Compound Semiconductors Shul RJ, Mcclellan GB, Briggs RD, Rieger DJ, Pearton SJ, Abernathy CR, Lee JW, Constantine C, Barratt C |
638 - 642 |
Plasma-Etching of III-Nitrides in ICl/Ar and IBr/Ar Plasmas Vartuli CB, Pearton SJ, Lee JW, Mackenzie JD, Abernathy CR, Shul RJ |
643 - 646 |
Essential Points for Precise Etching Processes in Pulse-Time-Modulated Ultrahigh-Frequency Plasma Samukawa S, Tsukada T |
647 - 653 |
Determining the Number of Chemical Steps Responsible, for the Distribution of Molecular-Species Within an Electron-Cyclotron-Resonance Microwave Plasma Webb SF, Gaddy GA, Blumenthal R |
654 - 658 |
Sheath Thickness in Very-High-Frequency Plasma Chemical-Vapor-Deposition of Hydrogenated Amorphous-Silicon Vansark WG, Meiling H, Hamers EA, Bezemer J, Vanderweg WF |
659 - 663 |
Diagnosing SiO2 Contact Etch Slap with Optical-Emission Mcnevin SC, Cerullo M |
664 - 667 |
Effects of Bias Frequency on Reactive Ion Etching Lag in an Electron-Cyclotron-Resonance Plasma-Etching System Doh HH, Yeon CK, Whang KW |
668 - 672 |
Homogeneity Characterization of a Large Microwave Plasma Bechu S, Boisselaporte C, Leprince P, Marec J |
673 - 677 |
Frequency-Dependence of Helicon Wave Plasmas Near Lower-Hybrid Resonance Frequency Yun SM, Kim JH, Chang HY |
678 - 682 |
Characterization of Wall Conditions in DIII-D Holtrop KL, Jackson GL, Kellman AG, Lee RL, West WP, Wood RD, Whyte DG |
683 - 685 |
Fabrication of Cross-Linked Polymer Shells for Inertial Confinement Fusion Experiments Kubo U, Nakano H, Kim HG |
686 - 691 |
Angular-Dependence of the Polysilicon Etch Rate During Dry-Etching in SF6 and Cl-2 Hedlund C, Jonsson LB, Katardjiev IV, Berg S, Blom HO |
692 - 696 |
Electrical-Stress Simulation of Plasma-Damage to Submicron Metal-Oxide-Silicon Field-Effect Transistors - Comparison Between Direct-Current and Alternating-Current Stresses Trabzon L, Awadelkarim OO |
697 - 701 |
Minimizing Metal Etch Rate Pattern Sensitivity in a High-Density Plasma Etcher Gabriel CT, Zheng J, Abraham SC |
702 - 706 |
Performance of Different Etch Chemistries on Titanium Nitride Antireflective Coating Layers and Related Selectivity and Microloading Improvements for Submicron Geometries Obtained with a High-Density Metal Etcher Abraham SC, Gabriel CT, Zheng J |
707 - 711 |
Tantalum Metallization Using an Electron-Cyclotron-Resonance Plasma Source Coupled with Divided Microwaves Nishimura H, Ono T, Oda M, Matsuo S |
712 - 715 |
Reactive-Sputtering of Titanium-Oxide Thin-Films Guerin D, Shah SI |
716 - 722 |
Operational Experience of Novel Vacuum Chambers Incorporating Massive Titanium-Sublimation Pumping in the Cornell Electron-Positron Storage-Ring Interaction Region Kersevan R, Li YL, Mistry NB |
723 - 727 |
Installation of a 14 mm Vacuum Chamber for an Undulator in the 1.3 GeV Storage-Ring at Synchrotron-Radiation-Research-Center Hsiung GY, Wang DJ, Shyy JG, Hsu SN, Hsiao KM, Lin MC, Chen JR |
728 - 730 |
Calculated Physical Adsorption-Isotherms of Neon and Radon on a Heterogeneous Surface Hobson JP |
731 - 735 |
Tests of an Environmental and Personnel Safe Cleaning Process for Brookhaven-National-Laboratory Accelerator and Storage-Ring Components Foerster CL, Lanni C, Lee R, Mitchell G, Quade W |
736 - 739 |
Synchrotron-Radiation-Induced H2O Desorption from Aluminum Surfaces Chen JR, Hsiung GY, Huang JR, Chang CM, Liu YC |
740 - 746 |
Cold-Cathode Gauges for Ultrahigh-Vacuum Measurements Kendall BR, Drubetsky E |
747 - 752 |
Precision Gas Flowmeter for Vacuum Calibration Levine PD, Sweda JR |
753 - 758 |
Calibration of an Axial Symmetrical Transmission Gauge in Ultrahigh and Extreme High-Vacuum Akimichi H, Arai T, Takeuchi K, Tuzi Y, Arakawa I |
759 - 762 |
Application of a High Critical-Temperature Superconductor Bearing for High-Vacuum Measurement Chew AD, Chambers A, Troup AP |
763 - 767 |
Gas Permeation and Leakage Through Reusable Seals Johnson ML, Manos DM, Provost T |
768 - 772 |
Experimental Approach to a Biological Characterization of Materials Nygren H, Eriksson C |
773 - 778 |
Evidence for Covalent Attachment of Purple Membrane to a Gold Surface via Genetic-Modification of Bacteriorhodopsin Brizzolara RA, Boyd JL, Tate AE |
779 - 783 |
Electrical Characterization of Uromyces Germ Tubes Grown on Integrated-Circuit Substrates Mcnally HA, Kozicki MN, Roberson RW, Whidden TK |
784 - 789 |
Image Force Effects and the Dielectric Response of SiO2 in Electron-Transport Across Metal-Oxide-Semiconductor Structures Wen HJ, Ludeke R, Newns DM, Lo SH |
790 - 796 |
Analysis of Interface Roughnesss Effect on Metal-Oxide-Semiconductor Fowler-Nordheim Tunneling Behavior Using Atomic-Force Microscope Images Lin HC, Ying JF, Yamanaka T, Fang SJ, Helms CR |
797 - 801 |
Rapid Thermal-Processing of Ill-Nitrides Hong J, Lee JW, Vartuli CB, Abernathy CR, Mackenzie JD, Donovan SM, Pearton SJ, Zolper JC |
802 - 806 |
Comparison of Ohmic Metallization Schemes for Ingaaln Ren F, Vartuli CB, Pearton SJ, Abernathy CR, Donovan SM, Mackenzie JD, Shul RJ, Zolper JC, Lovejoy ML, Baca AG, Hagerottcrawford M, Jones KA |
807 - 815 |
Real-Time Monitoring of Surface Processes by P-Polarized Reflectance Dietz N, Sukidi N, Harris C, Bachmann KJ |
816 - 819 |
Optimization of an Electron-Cyclotron-Resonance Etch Process Using Full Wafer Charge-Coupled-Device Interferometry Pendharkar SV, Resnick DJ, Dauksher WJ, Cummings KD, Tepermeister I, Conner WT |
820 - 824 |
In-Situ Analysis of Si(100) Surface Damage-Induced by Low-Energy Rare-Gas Ion-Bombardment Using X-Ray Photoelectron-Spectroscopy Ishii M, Hirose Y, Sato T, Ohwaki T, Taga Y |
825 - 829 |
Ion-Scattering Spectroscopy During InGaAs Molecular-Beam Epitaxy - Reduction of Sputtering Using Glancing-Angle Ar Ions Labanda JG, Barnett SA |
830 - 835 |
Design of a Scanning Tunneling Microscope for in-Situ Topographic and Spectroscopic Measurements Within a Commercial Molecular-Beam Epitaxy Machine Ventrice CA, Labella VP, Schowalter LJ |
836 - 843 |
Fluorine Atom Induced Decreases to the Contribution of Infrared Vibrations to the Static Dielectric-Constant of Si-O-F Alloy-Films Lucovsky G, Yang H |
844 - 849 |
Vapor-Deposition Polymerization of Polyimide for Microelectronic Applications Malba V, Liberman V, Bernhardt AF |
850 - 853 |
Study of Oxidized Cadmium Zinc Telluride Surfaces Chen KT, Shi DT, Chen H, Granderson B, George MA, Collins WE, Burger A, James RB |
854 - 859 |
Nickel Doping of Boron-Carbon Alloy-Films and Corresponding Fermi-Level Shifts Hwang SD, Remmes N, Dowben PA, Mcilroy DN |
860 - 864 |
Silicon and Germanium Nanoparticle Formation in an Inductively-Coupled Plasma Reactor Gorla CR, Liang S, Tompa GS, Mayo WE, Lu Y |
865 - 870 |
Real-Time Ultraviolet Ellipsometry Monitoring of Gate Patterning in a High-Density Plasma Vallon S, Joubert O, Vallier L, Ferrieu F, Drevillon B, Blayo N |
871 - 874 |
Chlorine Chemisorption and Reaction on the Si(111) Surface and Its Characterization Using 2nd-Harmonic Generation Haraichi S, Sasaki F |
875 - 879 |
Fowler-Nordheim Stressing of Polycrystalline Si Oxide Si Structures - Observation of Stress-Induced Defects in the Oxide, Oxide/Si Interface, and in Bulk Silicon Jiang J, Awadelkarim OO, Werking J, Bersuker G, Chan YD |
880 - 884 |
Low-Energy Cathodoluminescence Spectroscopy of SiO2 Nanoparticles Yang X, Law KY, Brillson LJ |
885 - 889 |
Comparison of Dry Etch Chemistries for SiC Mcdaniel G, Lee JW, Lambers ES, Pearton SJ, Holloway PH, Ren F, Grow JM, Bhaskaran M, Wilson RG |
890 - 893 |
Damage Investigation in AlGaAs and InGaP Exposed to High Ion Density Ar and SF6 Plasmas Lee JW, Lee KN, Stradtmann RR, Abernathy CR, Pearton SJ, Hobson WS, Ren F |
894 - 898 |
Secondary-Ion Mass-Spectrometry Study of Silicon Surface Preparation and the Polystyrene/Silicon Interface Strzhemechny YM, Schwarz SA, Schachter J, Rafailovich MH, Sokolov J |
899 - 904 |
Surface-Chemistry of the N-Containing Precursor Dimethylhydrazine on Cu Sun YM, White JM, Kamath A, Kwong DL |
905 - 910 |
Compositional Characterization of Very Thin SiO2/Si3N4/SiO2 Stacked Films by X-Ray Photoemission Spectroscopy and Time-of-Flight Secondary-Ion Mass-Spectroscopy Techniques Santucci S, Lozzi L, Ottaviano L, Passacantando M, Picozzi P, Moccia G, Alfonsetti R, Digiacomo A, Fiorani P |
911 - 914 |
Comparison Between Ultraviolet-Photoelectron Spectroscopy and Reflection High-Energy Electron-Diffraction Intensity Oscillations During Si Epitaxial-Growth on Si(100) Enta Y, Irimachi H, Suemitsu M, Miyamoto N |
915 - 918 |
Scanning-Tunneling-Microscopy Studies of Strain Relaxation and Misfit Dislocations in InAs Layers Grown on GaAs(110) and GaAs(111)A Belk JG, Sudijono JL, Yamaguchi H, Zhang XM, Pashley DW, Mcconville CF, Jones TS, Joyce BA |
919 - 926 |
Atomic-Level Investigation of the Growth of Si/Ge by Ultrahigh-Vacuum Chemical-Vapor-Deposition Lin DS, Miller T, Chiang TC |
927 - 929 |
Effect of Atomic-Hydrogen on the Growth of Ge/Si(100) Kahng SJ, Park JY, Booh KH, Lee J, Khang Y, Kuk Y |
930 - 935 |
In-Situ Measurements of Temperature-Dependent Strain Relaxation of Ge/Si(111) Deelman PW, Schowalter LJ, Thundat T |
936 - 940 |
Atomistic Simulations of the Nanometer-Scale Indentation of Amorphous-Carbon Thin-Films Sinnott SB, Colton RJ, White CT, Shenderova OA, Brenner DW, Harrison JA |
941 - 945 |
Multilayer Film Deposition of Tin/AlN on a Rotating Substrate Holder from Reactive Sputtering of Elemental Targets of Titanium and Aluminum Jensen H, Sobota J, Sorensen G |
946 - 950 |
Preparation and Characterization of Superhard Cnx/Zrn Multilayers Wu ML, Lin XW, Dravid VP, Chung YW, Wong MS, Sproul WD |
951 - 953 |
Microstructure and Surface-Morphology of Cryogenic Processed Thin Metal-Films Studied by Atomic-Force Microscope He L |
954 - 957 |
Morphological-Study of GaAs Grown by Periodic Supply Epitaxy on (111)B Substrates Allegretti FE, Roberts C, Neave JH |
958 - 962 |
Preparation of Highly Transparent and Conducting Ga2O3-In2O3 Films by Direct-Current Magnetron Sputtering Minami T, Takeda Y, Kakumu T, Takata S, Fukuda I |
963 - 967 |
Mechanical and Fracture-Toughness Studies of Amorphous SiC-N Hard Coatings Using Nanoindentation Scharf TW, Deng H, Barnard JA |
968 - 970 |
SiGe/Ge Heterojunction Infrared Detector Jiang RL, Gu SL, Jiang N, Li Z, Xu J, Zhu SM, Hu LQ, Zheng YD |
971 - 975 |
Photoluminescence and Photoreflectance Studies of Defects in GaAs Epitaxial Layers Grown by Liquid-Phase Epitaxy at Different Supercooling Temperatures Torresdelgado G, Mendozaalvarez JG, Vazquezlopez C, Alejoarmenta C |
976 - 980 |
Modeling of Ge Segregation in the Limits of Zero and Infinite Surface-Diffusion Godbey DJ, Ancona MG |
981 - 984 |
Surface Smoothing with Energetic Cluster Beams Insepov Z, Yamada I, Sosnowski M |
985 - 991 |
Effect of Interface on the Characteristics of Functional Films Deposited on Polycarbonate in Dual-Frequency Plasma Klembergsapieha JE, Poitras D, Martinu L, Yamasaki NL, Lantman CW |
992 - 997 |
5 Layer Stack of Nitride, Oxide, and Amorphous-Silicon on Glass, Analyzed with Spectroscopic Ellipsometry Tompkins HG, Williams PH |
998 - 1006 |
Determining the Optical-Properties of a Mixed-Metal Oxide Film, CO3-X-Ycrxfeyo4, with Spectroscopic Ellipsometry and Atomic-Force Microscopy Athey PR, Tabet MF, Urban FK |
A33 - A33 |
Papers from the 43Rd National Symposium of the American-Vacuum-Society .1. 14-18 October 1996 Philadelphia-Convention-Center Philadelphia, Pennsylvania - Preface Lucovsky G |
1007 - 1013 |
Characterization of the Low-Pressure Chemical-Vapor-Deposition Grown Rugged Polysilicon Surface Using Atomic-Force Microscopy Strausser YE, Schroth M, Sweeney JJ |
1014 - 1019 |
Rectifying Behavior of Silicon-Phthalocyanine Junctions Investigated with Scanning-Tunneling-Microscopy Spectroscopy Ottaviano L, Santucci S, Dinardo S, Lozzi L, Passacantando M, Picozzi P |
1020 - 1025 |
Application of Plasma-Enhanced Chemical-Vapor-Deposition Silicon-Nitride as a Double-Layer Antireflection Coating and Passivation Layer for Polysilicon Solar-Cells Winderbaum S, Yun F, Reinhold O |
1026 - 1031 |
Metal Vapor Sources for Scientific-Research and Thin-Film Technology - Review Zolkin AS |
1032 - 1034 |
Evidence of Aging Effects in Sputtered Zrn Films from Positron-Annihilation Brunner J, Perry AJ |
1035 - 1040 |
Low-Temperature (Less-Than-450 Degrees-C), Plasma-Assisted Deposition of Poly-Si Thin-Films on SiO2 and Glass Through Interface Engineering Wolfe DM, Wang F, Lucovsky G |
1041 - 1047 |
Growth-Mechanism of Cubic Boron-Nitride Thin-Films by Ion-Beam Assist Sputter-Deposition Park KS, Lee DY, Kim KJ, Moon DW |
1048 - 1056 |
Influence of Strain on Semiconductor Thin-Film Epitaxy Fitzgerald EA, Samavedam SB, Xie YH, Giovane LM |
1057 - 1062 |
Properties of Transparent Conducting Oxides Formed from CdO and ZnO Alloyed with SnO2 and In2O3 Wu X, Coutts TJ, Mulligan WP |
1063 - 1068 |
Transparent and Conductive Ga-Doped ZnO Films Grown by Low-Pressure Metal-Organic Chemical-Vapor-Deposition Li Y, Tompa GS, Liang S, Gorla C, Lu Y, Doyle J |
1069 - 1073 |
Highly Transparent and Conductive ZnO-In2O3 Thin-Films Prepared by Atmospheric-Pressure Chemical-Vapor-Deposition Minami T, Kumagai H, Kakumu T, Takata S, Ishii M |
1074 - 1079 |
Film Properties of ZnO-Al Prepared by Cosputtering of ZnO-Al and Either Zn or Al Targets Tominaga K, Manabe H, Umezu N, Mori I, Ushiro T, Nakabayashi I |
1080 - 1083 |
Pulsed-Laser Deposition of Conductive Srruo3 Thin-Films Jia QX, Foltyn SR, Hawley M, Wu XD |
1084 - 1088 |
Crystalline Alumina Deposited at Low-Temperatures by Ionized Magnetron Sputtering Schneider JM, Sproul WD, Voevodin AA, Matthews A |
1089 - 1097 |
Materials Processing with Intense Pulsed Ion-Beams Rej DJ, Davis HA, Olson JC, Remnev GE, Zakoutaev AN, Ryzhkov VA, Struts VK, Isakov IF, Shulov VA, Nochevnaya NA, Stinnett RW, Neau EL, Yatsui K, Jiang W |
1098 - 1102 |
Multifunctional Multilayer Optical Coatings Martin PM, Stewart DC, Bennett WD, Affinito JD, Gross ME |
1103 - 1107 |
Epitaxial-Growth of ZnO Thin-Films on R-Plane Sapphire Substrate by Radio-Frequency Magnetron Sputtering Kim YJ, Kim YT, Yang HK, Park JC, Han JI, Lee YE, Kim HJ |
1108 - 1112 |
Morphology and Phase of Tin Oxide Thin-Films During Their Growth from the Metallic Tin Chung YS, Hubenko A, Meyering L, Schade M, Zimmer J, Remmel T |
1113 - 1117 |
Dependence of Microstructure and Thermochromism on Substrate-Temperature for Sputter-Deposited VO2 Epitaxial-Films Jin P, Yoshimura K, Tanemura S |
1119 - 1123 |
Novel Method for Growing CdS on CdTe Surfaces for Passivation of Surface-States and Heterojunction Formation Nelson AJ, Levi D |
1124 - 1128 |
Metal-Dependent Fermi-Level Movement in the Metal/Sulfur-Passivated InGaP Contact Kim YK, Kim S, Seo JM, Ahn S, Kim KJ, Kang TH, Kim B |
1129 - 1134 |
Hydrogen Desorption from Ion-Roughened Si(100) Hess G, Russell M, Gong B, Parkinson P, Ekerdt JG |
1135 - 1139 |
Photochemical Routes to Silicon Epitaxy Dippel O, Wright S, Hasselbrink E |
1140 - 1145 |
Reactions of Diethylgermane, Triethylgermane, and Ethyl Groups on Ge(100) Chen JH, Greenlief CM |
1146 - 1154 |
Thermal-Decomposition Reactions of Acetaldehyde and Acetone on Si(100) Armstrong JL, White JM, Langell M |
1155 - 1158 |
Adsorption of N2H4 on Silicon Surfaces Tindall C, Li L, Takaoka O, Hasegawa Y, Sakurai T |
1159 - 1162 |
Reaction of Dimethylzinc and Diethylzinc on the as-Rich GaAs(100)-C(4X4) Surface Lam HT, Venkateswaran N, Vohs JM |
1163 - 1167 |
Adsorption State of Hydrogen-Sulfide on the GaAs(001)-(4X2) Surface Chung CH, Yi SI, Weinberg WH |
1168 - 1172 |
Dissociative Adsorption of Hydrogen-Sulfide on GaAs(100)-(2X4) and GaAs(100)-(4X2) Surfaces Yi SI, Chung CH, Weinberg WH |
1173 - 1178 |
High-Resolution Electron-Energy-Loss Spectroscopy and Photoelectron Emission Microscopy Study of Fomblin-Y on Molybdenum Surfaces Montei EL, Kordesch ME |
1179 - 1184 |
Use of Sputtering and Negative Carbon Ion Sources to Prepare Carbon Nitride Films Murzin IH, Tompa GS, Forsythe EW, Wei JJ, Muratov V, Fischer T |
1185 - 1189 |
Growth-Mechanism and Structural Studies of Sputtered PbTiO3 Thin-Films Wasa K, Haneda Y, Satoh T, Adachi H, Setsune K |
1190 - 1193 |
X-Ray Studies on (110)Fiber Texture in Fetan Films Using Ti Underlayers Klemmer TJ, Inturi VR, Barnard JA |
1194 - 1199 |
Effect of Oblique Sputtering on Microstructural Modification of ZnO Thin-Films Lee YE, Kim SG, Kim YJ, Kim HJ |
1200 - 1205 |
Ion-Beam-Induced Surface Modification of Chemical-Vapor-Deposition Diamond for X-Ray-Beam Position Monitor Applications Liu C, Shu D, Kuzay TM, Wen L, Melendres CA |
1206 - 1210 |
Determination of the Components of Stress in a Polycrystalline Diamond Film Using Polarized Raman-Spectroscopy Mossbrucker J, Grotjohn TA |
1211 - 1214 |
Properties of ZrO2 Films on Sapphire Prepared by Electron-Cyclotron-Resonance Oxygen-Plasma-Assisted Deposition Moulzolf SC, Yu Y, Frankel DJ, Lad RJ |
1215 - 1219 |
Fabrication of Spin-Current Field-Effect Transistor Structures Cabbibo A, Childress JR, Pearton SJ, Ren F, Kuo JM |
1220 - 1222 |
Microfabricated High-Intensity Discharge Lamps Khan BA, Pinker RD, Cammack DA, Racz J |
1223 - 1227 |
Controlled Growth of WO3 Films Legore LJ, Greenwood OD, Paulus JW, Frankel DJ, Lad RJ |
1228 - 1234 |
Comparison of Interfacial and Electronic-Properties of Annealed Pd/SiC and Pd/SiO2/SiC Schottky Diode Sensors Chen LY, Hunter GW, Neudeck PG, Bansal G, Petit JB, Knight D |
1235 - 1245 |
Characterization of Chemical Interaction of Asbestos Surfaces During Culturing with Lung-Cells Seal S, Barr TL, Krezoski S, Petering DH, Antholine W |
1246 - 1249 |
Electrostatically Actuated Micromechanical Switches Majumder S, Mcgruer NE, Zavracky PM |
1250 - 1256 |
Characterization of an Aluminum Etching Process in an Inductively-Coupled Discharge Using Measurements of Discharge Impedance and Current and Voltage Sensors Patrick R, Lee CC, Hilliker SE, Moeller RD |
1257 - 1260 |
Transmission Electron-Microscopy Study of Granular Fe-Mg Films Made by Gas Evaporation Mengburany X, Phillips J, Hadjipanayis G |
1261 - 1268 |
Characterization of Metal-Clusters (Pd and Au) Supported on Various Metal-Oxide Surfaces (MgO and TiO2) Xu C, Oh WS, Liu G, Kim DY, Goodman DW |
1269 - 1274 |
How Annealing Conditions Influence the Fluctuation of Step Edges of Step Bunching on Vicinal GaAs(100) Formed by Annealing in Ash3 and H-2 Ambient Hata K, Shigekawa H, Ueda T, Akiyama M, Okano T |
1275 - 1279 |
Influence of Cluster Diffusion on the Coarsening of Xe Films on Pt(111) Sholl DS, Fichthorn KA, Skodje RT |
1280 - 1284 |
Transport-Properties Along a Finite-Length Atomic Chain Yamada T |
1285 - 1290 |
Scanning Tunneling Spectroscopy of Fe/W(110) Using Iron Covered Probe Tips Bode M, Pascal R, Wiesendanger R |
1291 - 1294 |
Transport Study in High-Mobility GaAs/AlGaAs Lateral Superlattices Hannan M, Giannetta RW, Grundbacher R, Adesida I |
1295 - 1298 |
Predictions of Scanning Tunneling Microscope Images of Furan and Pyrrole on Pd(111) Futaba DN, Chiang S |
1299 - 1304 |
Investigation of Framework and Cation Substitutions in Keggin-Type Heteropoly Acids Probed by Scanning-Tunneling-Microscopy and Tunneling Spectroscopy Kaba MS, Song IK, Barteau MA |
1305 - 1311 |
Vacuum Requirements for Next Wafer Size Physical Vapor-Deposition System Hashim I, Raaijmakers IJ, Park SE, Kim KB |
1312 - 1318 |
Evaluation of Low-Cost Residual-Gas Analyzers for Ultrahigh-Vacuum Applications Rao MG, Dong C |
1319 - 1327 |
Root Cause Determination of Particle Contamination in the Tungsten Etch Back Process Uritsky Y, Chen L, Zhang S, Wilson S, Mak A, Brundle CR |
1328 - 1333 |
Secondary-Ion Mass-Spectrometry of a Copper Polyimide Thin-Film Packaging Technology Parks CC |
1334 - 1339 |
Structural and Optical-Properties of Plasma-Deposited Amorphous Hydrogenated Oxygenated Carbon-Films Durrant SF, Deoliveira RT, Castro SG, Bolivarmarinez LE, Galvao DS, Demoraes MA |
1340 - 1344 |
Low-Temperature Selective Growth of GaAs Quantum Wires by Modulated Flux Chemical Beam Epitaxy Ro JR, Kim SB, Lee EH, Lee HT, Park SJ |
1345 - 1350 |
Atomic Step Distributions on Annealed Periodic Si(001) Gratings Tanaka S, Umbach CC, Blakely JM, Tromp RM, Mankos M |
1351 - 1357 |
Atomic and Mesoscopic Scale Characterization of Semiconductor Interfaces by Ballistic-Electron-Emission Microscopy Lee EY, Bhargava S, Chin MA, Narayanamurti V |
1358 - 1364 |
Momentum Conservation for Hot-Electrons at the Au/Si(111) Interface Observed by Ballistic-Electron-Emission Microscopy Bell LD |
1365 - 1370 |
Experimental-Determination of Quantum Dipoles at Semiconductor Heterojunctions Prepared by Van-der-Waals Epitaxy - Linear Correction Term for the Electron-Affinity Rule Schlaf R, Lang O, Pettenkofer C, Jaegermann W, Armstrong NR |
1371 - 1376 |
Production Evaluation of Real-Time Statistical Process-Control on a Sub-O.5 Mu-M Inductively-Coupled Metal Etch Process Boskin ED, Dalton TJ |
1377 - 1384 |
Artificial Neural-Network Exponentially Weighted Moving Average Controller for Semiconductor Processes Smith TH, Boning DS |
1385 - 1388 |
Wafer-Transfer Robot for Use in Ultrahigh-Vacuum Kanetomo M, Kashima H, Suzuki T |
1389 - 1393 |
Characterization of a Low-Temperature, Low-Pressure Plasma-Enhanced Chemical-Vapor-Deposition Tetraethylorthosilicate Oxide Deposition Process Arias LJ, Selbrede SC, Weise MT, Carl DA |
1394 - 1398 |
Characterization of Ultrathin SiO2-Films Grown by Rapid Thermal-Oxidation Hu YZ, Tay SP, Wasserman Y, Zhao CY, Hebert KJ, Irene EA |
1399 - 1402 |
Characterization of Fluorinated Tetra Ethyl Ortho Silicate Oxide-Films Deposited in a Low-Pressure Plasma-Enhanced Chemical-Vapor-Deposition Reactor Weise MT, Selbrede SC, Arias LJ, Carl D |
1403 - 1408 |
End-Point Prediction for Polysilicon Plasma Etch via Optical-Emission Interferometry Wong K, Boning DS, Sawin HH, Butler SW, Sachs EM |
1409 - 1412 |
Temperature and Concentration Effects on Ozone Ashing of Photoresist Gardner WL, Baddorf AP, Holber WM |
1413 - 1417 |
Carbon Contamination in an Etching Reactor Using Electron-Cyclotron-Resonance Plasma and the Effect of a N-2 Addition Miwa K, Aoyama M, Higuchi K, Inoue M, Kojiri H, Nagase K |
1418 - 1422 |
Thermovoltage in Scanning-Tunneling-Microscopy Hoffmann D, Haas A, Kunstmann T, Seifritz J, Moller R |
1423 - 1426 |
Superresolution Fluorescence Imaging of Single Dye Molecules in Thin Polymer-Films Bopp MA, Tarrach G, Lieb MA, Meixner AJ |
1427 - 1431 |
Optical-Fiber Structures Studied by a Tapping-Mode Scanning Near-Field Optical Microscope Tsai DP, Li WK |
1432 - 1437 |
Luminescence from GaAs(100) Surface Excited by a Scanning Tunneling Microscope Chizhov I, Lee G, Willis RF, Lubyshev D, Miller DL |
1438 - 1441 |
Selective Scanning Tunneling Microscope-Induced Light-Emission from Self-Assembled Monolayer-Covered Au Surfaces Evoy S, Pardo FD, Stjohn PM, Craighead HG |
1442 - 1445 |
Near-Field Optical-Recording on the Cyanine Dye Layer of a Commercial Compact-Disk-Recordable Tsai DP, Guo WR |
1446 - 1450 |
High-Selectivity Pattern Transfer Processes for Self-Assembled Monolayer Electron-Beam Resists Carr DW, Lercel MJ, Whelan CS, Craighead HG, Seshadri K, Allara DL |
1451 - 1454 |
Nanometer-Scale Lithography on H-Passivated Si(100) by Atomic-Force Microscope in Air Lee HT, Oh JS, Park SJ, Park KH, Ha JS, Yoo HJ, Koo JY |
1455 - 1459 |
Metal Pattern Fabrication Using the Local Electric-Field of a Conducting Atomic-Force Microscope Probe Brandow SL, Calvert JM, Snow ES, Campbell PM |
1460 - 1465 |
Sculptured Thin-Films and Glancing Angle Deposition - Growth Mechanics and Applications Robbie K, Brett MJ |
1466 - 1472 |
Influence of Electrostatic Forces on the Investigation of Dopant Atoms in Layered Semiconductors by Scanning Tunneling Microscopy/Spectroscopy and Atomic-Force Microscopy Schlaf R, Louder D, Nelson MW, Parkinson BA |
1473 - 1477 |
Unusual Magnetic-Behavior in Sputtered FeO and Alpha-Fe2O3 Thin-Films Dimitrov DV, Hadjipanayis GC, Papaefthymiou V, Simopoulos A |
1478 - 1481 |
Nanometer-Scale Patterning of C-60 Multilayers Using Molecular Manipulation Dunn AW, Moriarty P, Beton PH |
1482 - 1487 |
Atom Manipulation on Si(111)-7X7 Surface by Contact Formation of Biased Scanning Tunneling Microscope Tip - Surface-Structures and Tip Current Variation with Atom Removal Hasunuma R, Komeda T, Mukaida H, Tokumoto H |
1488 - 1492 |
Laser-Pulse Desorption Under Scanning Tunneling Microscope Tip-Cl Removal from Single-Site on Si(100) Dohnalek Z, Lyubinetsky I, Yates JT |
1493 - 1498 |
Nanofabrication Using Selective Thermal-Desorption of SiO2/Si Induced by Electron-Beams Fujita S, Maruno S, Watanabe H, Ichikawa M |
1499 - 1502 |
Fabrication of Electron-Beam Microcolumn Aligned by Scanning Tunneling Microscope Park JY, Choi HJ, Lee Y, Kang S, Chun K, Park SW, Kuk Y |
1503 - 1509 |
Femtosecond Time-Resolved Photoemission of Electron Dynamics in Surface Rydberg States Hertel T, Knoesel E, Hotzel A, Wolf M, Ertl G |
1510 - 1514 |
Femtosecond Photoemission-Study of Electron Relaxation in 2-Dimensional Layered Electron-Systems Xu S, Miller CC, Cao J, Mantell DA, Mason MG, Muenter AA, Parkinson BA, Miller RJ, Gao Y |
1515 - 1519 |
Core-Level Photoemission-Study of as Interaction with InP(110) and GaAs(110) He ZQ, Khazmi YO, Kanski J, Ilver L, Nilsson PO, Karlsson UO |
1520 - 1525 |
Role of Secondary Electrons in Hot-Electron Femtochemistry at Surfaces Using Tunnel-Junctions Gadzuk JW |
1526 - 1530 |
Thermal and Photon-Induced Desorption of NH3 and Nd3 from Ag(111) Szulczewski GJ, White JM |
1531 - 1536 |
Scanning-Tunneling-Microscopy Study of the Initial-Stages of Growth of Cu/Si(111) - The Formation and Thermal Evolution of the Quasi-5X5 Incommensurate Structure Simao RA, Achete CA, Niehus H |
1537 - 1541 |
Structure-Analysis of Ge Dimer on Si(001) by Medium-Energy Ion-Scattering Blocking Profiles from Embedded Ge Layers Sumitomo K, Nishioka T, Ogino T |
1542 - 1547 |
Diffusion Mechanisms of N-Butane on Pt(111) and Cu(001) - Unique Molecular-Features Raut JS, Fichthorn KA |
1548 - 1552 |
Anisotropy in the Lateral Momentum of Co Chemisorbed on Cu(110) Studied by Time-of-Flight Electron Simulated Desorption Ion Angular-Distribution Ahner J, Mocuta D, Ramsier RD, Yates JT |
1553 - 1557 |
Understanding Gas-Surface Interactions from Direct Force Measurements Using a Specialized Torsion Balance Cook SR, Hoffbauer MA |
1558 - 1562 |
Formation of NH3 and N-2 from Atomic Nitrogen and Hydrogen on Rhodium(111) Vanhardeveld RM, Vansanten RA, Niemantsverdriet JW |
1563 - 1567 |
Field-Emission Barrier Height of an Alloy Tip - Possible Effect of Surface Segregation Nakane T, Sano K, Sakai A, Magosakon A, Yanagimoto K, Sakata T |
1568 - 1571 |
X-Ray Photoelectron-Spectroscopy and Scanning Tunnel Microscope Studies of Formate Species Synthesized on Cu(111) Surfaces Nakamura J, Kushida Y, Choi Y, Uchijima T, Fujitani T |
1572 - 1575 |
Scanning Tunneling Microscope Study of Sb/Si(111)-5-Root-3X5-Root-3 Structure Park KH, Ha JS, Yun WS, Lee EH, Yi JY, Park SJ |
1576 - 1580 |
Epitaxial-Growth of Ultrathin Films of Chromium and Its Oxides on Pt(111) Zhang LP, Kuhn M, Diebold U |
1581 - 1585 |
Chemistry of Cyclopentadiene on a Cu(100) Surface - Detection of Cyclopentadienyl (C5H5) Species as Reaction Intermediates Sun DH, Bent BE, Chen JG |
1586 - 1591 |
Steady-State Catalytic C-C Bond Formation on Reduced TiO2 Surfaces Lusvardi VS, Pierce KG, Barteau MA |
1592 - 1596 |
Working Surface Science Model of Comos Hydrodesulfurization Catalysts Dejong AM, Debeer VH, Vanveen JA, Niemantsverdriet JW |
1597 - 1602 |
Silicon Oxycarbide Formation on SiC Surfaces and at the SiC/SiO2 Interface Onneby C, Pantano CG |
1603 - 1607 |
Antimony Adsorption on the Si(111) Surface with the 7X7 and Root-3X-Root-3-Ga Structures Studied by Scanning-Tunneling-Microscopy Kusumi Y, Fujita K, Ichikawa M |
1608 - 1612 |
Interactions Between Sulfur and Platinum in Bimetallic Surfaces - Reaction of S-2 with Pt-Al Alloys Rodriguez JA, Kuhn M |
1613 - 1618 |
Effect of Herringbone Reconstruction on Interference of 2-Dimensional Electron-Gas on Au(111) Surfaces Fujita D, Amemiya K, Yakabe T, Nejoh H, Sato T, Iwatsuki M |
1619 - 1623 |
Interaction of Carbon-Monoxide with a Platinum(0.25)-Rhodium(0.75)(111) Single-Crystal Surface Rutten FJ, Nieuwenhuys BE, Mccoustra MR, Chesters MA, Hollins P |
1624 - 1629 |
Role of Zero-Point Effects in Catalytic Reactions Involving Hydrogen Gross A, Scheffler M |
1630 - 1634 |
Chemisorption of Co on the Ir(111) Surface - Adsorption and Desorption-Kinetics Measured with in-Situ Vibrational Spectroscopy Sushchikh M, Lauterbach J, Weinberg WH |
1635 - 1641 |
Mechanism of Efficient Carbon-Monoxide Oxidation at Ru(0001) Stampfl C, Scheffler M |
1642 - 1646 |
Cyanide Intermediates in Catalytic Reduction of No by C2H4 on Rhodium(111) Vanhardeveld RM, Schmidt AJ, Vansanten RA, Niemantsverdriet JW |
1647 - 1652 |
Surface Studies of Model Supported Catalysts - No Adsorption on Rh/CeO2(001) Overbury SH, Huntley DR, Mullins DR, Ailey KS, Radulovic PV |
1653 - 1662 |
Pd, Cu, and Au Particles on Al2O3 Thin-Films - An Infrared Reflection-Absorption Spectroscopy Study of Monometallic and Bimetallic Planar Model Supported Catalysts Rainer DR, Xu C, Holmblad PM, Goodman DW |
1663 - 1666 |
Direct Dissociative Chemisorption of Methane, Ethane, Propane, and Cyclopropane on Ir(110) Kelly D, Weinberg WH |
1667 - 1673 |
Cyclization and Related Reactions of Iodoethanol on Ag(110) Jones GS, Barteau MA |
1674 - 1678 |
Structure of Methyl Nitrite on Ag(111) Fieberg JE, White JM |
1679 - 1684 |
Ultraviolet Raman-Spectroscopy of Catalysts and Other Solids Stair PC, Li C |
1685 - 1691 |
Reactions of Acetone on the Surfaces of the Oxides of Uranium Madhavaram H, Buchanan P, Idriss H |
1692 - 1697 |
Reaction of Hydrogen with O/Ru(001) and Ruox Films - Formation of Hydroxyl and Water Li SY, Rodriguez JA, Hrbek J, Huang HH, Xu GQ |
1698 - 1703 |
Electron-Stimulated Desorption Study of the MgO(100)-D2O System Colera I, Gonzalez R, Soria E, Desegovia JL, Roman EL, Chen Y |
1704 - 1709 |
X-Ray Photoemission Spectroscopy Study of UV/Ozone Oxidation of Au Under Ultrahigh-Vacuum Conditions Krozer A, Rodahl M |
1710 - 1716 |
Preparation and Characterization of Epitaxial Titanium-Oxide Films on Mo(100) Oh WS, Xu C, Kim DY, Goodman DW |
1717 - 1723 |
Chemical and Spectroscopic Surface Science Investigation of MoO3 and MoO3/Al2O3 Ultrathin Films Street SC, Goodman DW |
1724 - 1728 |
Characterizing Flat-Panel Display Materials Using Quadrupole-Based Secondary-Ion Mass-Spectrometry Novak SW |
1729 - 1732 |
Electron Field-Emission from Amorphous Carbon-Cesium Alloys Bozeman SP, Camphausen SM, Cuomo JJ, Kim SI, Ahn YO, Ko Y |
1733 - 1738 |
Wide-Band Gap Materials for Field-Emission Devices Zhirnov VV, Wojak GJ, Choi WB, Cuomo JJ, Hren JJ |
1739 - 1744 |
Electronic-Structure and Electron-Emission of Lithium-Containing Amorphous Hydrogenated Carbon-Films Thiele JU, Kania P, Oelhafen P |
1745 - 1749 |
Effects of Al, Ag, and Ca on Luminescence of Organic Materials Choong VE, Park Y, Gao Y, Wehrmeister T, Mullen K, Hsieh BR, Tang CW |
1750 - 1754 |
Structural and Optical-Properties of Alkali-Halide Multilayer LiF-NaF Films Somma F, Montereali RM, Santucci S, Lozzi L, Passacantando M, Cremona M, Mauricio MH, Nunes RA |
1755 - 1758 |
Comparison of Magnetic Linear Dichroism in 4F Photoemission and 4D-4F Photoemission from Gd on Y(0001) Gammon WJ, Mishra SR, Pappas DP, Goodman KW, Tobin JG, Schumann FO, Willis R, Denlinger JD, Rotenberg E, Warwick A, Smith NV |
1759 - 1765 |
Vector Magnetometry in Ultrathin Magnetic-Structures with Atomic Layer Resolution by Polarized Neutron Reflection Bland JA |
1766 - 1769 |
Generalized Description of Magnetic-X-Ray Circular-Dichroism in Fe 3P Photoelectron Emission Tobin JG, Goodman KW, Schumann FO, Willis RF, Kortright JB, Denlinger JD, Rotenberg E, Warwick A, Smith NV |
1770 - 1773 |
Intermixing in Fe/Cr(001) Multilayers - Density-Functional Calculations Singh DJ |
1774 - 1779 |
Properties of Ni/Nb Magnetic/Superconducting Multilayers Mattson JE, Osgood RM, Potter CD, Sowers CH, Bader SD |
1780 - 1784 |
Patterning of Cu, Co, Fe, and Ag for Magnetic Nanostructures Jung KB, Lee JW, Park YD, Caballero JA, Childress JR, Pearton SJ, Ren F |
1785 - 1790 |
Growth, Morphology, and Magnetic-Properties of Ultrathin Epitaxial Co Films on Cu(100) Coyle ST, Hembree GG, Scheinfein MR |
1791 - 1795 |
Wavelength Tunable Fiber Bragg Grating Devices Based on Sputter-Deposited Resistive and Piezoelectric Coatings Fox GR, Muller CA, Setter N, Costantini DM, Ky NH, Limberger HG |