Journal of Vacuum Science & Technology A

Journal of Vacuum Science & Technology A, Vol.21, No.3 Entire volume, number list

ISSN: 0734-2101 (Print)

In this Issue (47 articles)

521 - 531	Metal-organic interface and charge injection in organic electronic devices Scott JC
532 - 544	Limits to the strength of super- and ultrahard nanocomposite coatings Veprek S, Mukherjee S, Karvankova P, Mannling HD, He JL, Moto K, Prochazka J, Argon AS
545 - 552	High-temperature interaction of nitrogen with thin iron films: Thermal desorption kinetics studies combined with microstructure analysis of Fe-N films Lisowski W, Keim EG, Smithers MA
553 - 557	Interface broadening due to Ar+ ion bombardment measured on Co/Cu multilayer at grazing angle of incidence Barna A, Menyhard M, Zsolt G, Koos A, Zalar A, Panjan P
558 - 562	Thermal stability of polycrystalline TiN/CrN superlattice coatings Yang Q, Zhao LR
563 - 568	Fast x-ray spectroscopy study of ethene on clean and SO4 precovered Pt{111} Lee AF, Wilson K
569 - 571	Beneficial influence of continuous ion bombardment during reactive sputter deposition of chromium nitride films Janssen GCAM, Hoy R
572 - 576	Effect of pressure on dc planar magnetron sputtering of platinum Thomas JH
577 - 581	Quick estimation of physical etching of SiO2 among etchers with decoupled plasma sources Ding GW, Wu WT, Mak S, Yau WF
582 - 588	Effect of thermal annealing on the electronic properties of nitrogen doped amorphous carbon/p-type crystalline silicon heterojunction diodes Valentini L, Lozzi L, Salerni V, Armentano I, Kenny JM, Santucci S
589 - 595	Relation between the ion flux, gas phase composition, and wall conditions in chlorine plasma etching of silicon Ullal SJ, Kim TW, Vahedi V, Aydil ES
596 - 606	Modeling high power magnetron copper seed deposition: Effect of feature geometry on coverage Stout PJ, Zhang D, Ventzek PLG
607 - 615	Deposition of plasma polymerized perfluoromethylene-dominated films showing oil-repellency Chase JE, Boerio FJ
616 - 622	Structural and electrical characteristics of W-N thin films prepared by reactive rf sputtering Jiang PC, Chen JS, Lin YK
623 - 627	Effect of cooling conditions on plasma-carbonitrided iron surfaces Gontijo LC, Machado R, Miola EJ, Castelleti LC, Nascente PAP
628 - 633	Reaction sequence of Co/Ni/Si(001) system Guo SS, Tsai CJ
634 - 637	Optical transmittance study of silver particles formed by AgOx thermal decomposition Shima T, Tominaga J
638 - 642	SiO2 etching with perfluorobutadiene in a dual frequency plasma reactor Fracassi F, d'Agostino R, Fornelli E, Illuzzi F, Shirafuji T
643 - 648	Aluminum diffusion and nitrogen sputter yield for nitrogen plasma immersion ion implantation into aluminum Manova D, Attenberger W, Mandl S, Stritzker B, Rauschenbach B
649 - 652	Metal deposition with femtosecond light pulses at atmospheric pressure Haight R, Longo P, Wagner A
653 - 659	Compositional and electrical properties of zirconium dioxide thin films chemically deposited on silicon Harasek S, Wanzenboeck HD, Bertagnolli E
660 - 670	Inductively coupled plasmas in oxygen: Modeling and experiment Kiehlbauch MW, Graves DB
671 - 675	Degradation of CrN films at high temperature under controlled atmosphere Lu FH, Chen HY, Hung CH
676 - 682	Monitoring and purging dynamics of trace gaseous impurity in atmospheric pressure rapid thermal process Hu YZ, Tay SP
683 - 689	Experimental study outgassing from textile materials Barni R, Riccardi C, Fontanesi M
690 - 694	Mathematical model for predicting molecular-beam epitaxy growth rates for wafer production Shi BQ
695 - 700	Phase transformation in chromium nitride films Chen HY, Lu FH
701 - 705	Optical and structural studies of hydride vapor phase epitaxy grown GaN Chang YC, Cai AL, Muth JF, Kolbas RM, Park M, Cuomo JJ, Hanser A, Bumgarner J
706 - 717	Compensation for transient chamber wall condition using real-time plasma density feedback control in an inductively coupled plasma etcher Klimecky PI, Grizzle JW, Terry FL
718 - 722	Cleaning of Si and properties of the HfO2-Si interface Choi K, Harris H, Gangopadhyay S, Temkin H
723 - 727	Vacuum deposition of silver island films on chemically modified surfaces Malynych SZ, Chumanov G
728 - 739	Physical and electrical properties of low temperature (< 100 degrees C) SiO2 films deposited by electron cyclotron resonance plasmas Rashid R, Flewitt AJ, Robertson J
740 - 744	Hydrogen elimination reactions in the thermal decomposition of alcohols on Si(100) surfaces Yoon WJ, Lee JP, Park G, Park CR, Kwak HT, Sung MM
745 - 751	Influence of energetic bombardment on stress, resistivity, and microstructure of indium tin oxide films grown by radio frequency magnetron sputtering on flexible polyester substrates Carcia PF, McLean RS, Reilly MH, Li ZG, Pillione LJ, Messier RF
752 - 755	Low temperature crystallization of germanium on plastic by externally applied compressive stress Hekmatshoar B, Shahrjerdi D, Mohajerzadeh S, Khakifirooz A, Goodarzi A, Robertson M
756 - 761	High-temperature stability of nichrome in reactive environments Zhou J, Ohno TR, Wolden CA
762 - 765	Surface and bulk chemistry of calcined UO2 powders Nelson AJ, Meier TC, Saw CK, Griffith LV
766 - 771	Effects of ultraviolet/ozone treatment on benzocyclobutene films Viallet B, Daran E, Malaquin L
772 - 778	Evolution of chemical bonding configuration in ultrathin SiOxNy layers grown by low-temperature plasma nitridation Lai YS, Chen JS
779 - 786	Molecular desorption of a nonevaporable getter St 707 irradiated at room temperature with synchrotron radiation of 194 eV critical photon energy Le Pimpec F, Grobner O, Laurent JM
787 - 791	Effects of W doping and annealing parameters on the ferroelectricity and fatigue properties of sputtered Bi3.25La0.75Ti3O12 films Lin WT, Chiu TW, Yu HH, Lin JL, Lin MS
792 - 796	Hydrogen contamination in Ge-doped SiO2 thin films prepared by helicon activated reactive evaporation Li WT, Bulla AP, Love J, Luther-Davies B, Charles C, Boswell R
797 - 805	X-ray photoelectron spectroscopy and static secondary ion mass spectroscopy study of activation mechanism of Zr-V low activation temperature nonevaporable getter films Masek K, Sutara F, Skala T, Drbohlav J, Veltruska K, Matolin V
806 - 813	Role of molecular diffusion in the theory of gas flow through crimped-capillary leaks Bach HT, Meyer BA, Tuggle DG
814 - 824	Sensor fault detection in etch based on broadband rf signal observation Park HM, Grimard DS, Grizzle JW
825 - 826	Highly oriented SrTiO3 thin film on Si deposited by magnetron sputtering Wang Y, Chan HLW, Cheng YL, Choy CL
827 - 827	Comment on "Quantitative analysis of annealing-induced structure disordering in ion-implanted amorphous silicon," by Ju-Yin Cheng et al., J. Vacuum Science and Technology A 20, 1855 (2002) Roorda S