L1 - L3 |
Batch process for atomic layer deposition of hafnium silicate thin films on 300-mm-diameter silicon substrates Okuyama Y, Barelli C, Tousseau C, Park S, Senzaki Y |
369 - 387 |
Comprehensive analysis of chlorine-containing capacitively coupled plasmas Franz G |
388 - 393 |
Removal of particles during plasma processes using a collector based on the properties of particles suspended in the plasma Setyawan H, Shimada M, Hayashi Y, Okuyama K |
394 - 400 |
Low temperature, fast deposition of metallic titanium nitride films using plasma activated reactive evaporation Valero JAMD, Le Petitcorps Y, Manaud JP, Chollon G, Romo FJC, Lopez A |
401 - 407 |
Amorphous transparent conductive oxide films of In2O3-ZnO with additional Al2O3 impurities Tominaga K, Fukumoto H, Kondou K, Hayashi Y, Murai K, Moriga T, Nakabayashi I |
408 - 416 |
Role of C2F4, CF2, and ions in C4F8/Ar plasma discharges under active oxide etch conditions in an inductively coupled GEC cell reactor Barela MJ, Anderson HM, Oehrlein GS |
417 - 422 |
Development of low temperature silicon oxide thin films by photo-CVD for surface passivation Mukhopadhyay S, Jana T, Ray S |
423 - 433 |
Investigation of the nanostructure and wear properties of physical vapor deposited CrCuN nanocomposite coatings Baker MA, Kench PJ, Tsotsos C, Gibson PN, Leyland A, Matthews A |
434 - 439 |
Wettability and thermal stability of fluorocarbon films deposited by deep reactive ion etching Zhuang YX, Menon A |
440 - 447 |
Discharge mode transitions in low-frequency inductively coupled plasmas with internal oscillating current sheets Tsakadze ZL, Ostrikov K, Tsakadze EL, Xu S |
448 - 451 |
Characterization of epitaxial germanium grown on (LaxY1-x)(2)O-3/Si(111)) using different surfactants Preisler EJ, Guha S |
452 - 459 |
Effect of O-2 flow ratio on the microstructure and stress of room temperature reactively sputtered RuOx thin films Shi JX, Huang F, Weaver ML, Klein TM |
460 - 464 |
Using beam.flux monitor as Langmuir probe for plasma-assisted molecular beam epitaxy Wistey MA, Bank SR, Yuen HB, Harris JS, Oye MM, Holmes AL |
465 - 469 |
Enhancement of mechanical properties of organosilicon thin films deposited from diethylsilane Ross AD, Gleason KK |
470 - 474 |
Adsorbate effects on pulsed electron diode anode thermal response Statom TK, Ruebush M, Shiffler DA, Schamiloglu E, LaCour M, Golby K |
475 - 479 |
Electron impact effects on the oxidation of Si(111) at 90 K Ohno S, Yates JT |
480 - 487 |
Effect of ion entry acceptance conditions on the performance of a quadrupole mass spectrometer operated in upper and lower stability regions Turner P, Taylor S, Gibson JR |
488 - 496 |
Plasma enhanced atomic layer deposition of HfO2 and ZrO2 high-k thin films Lao SX, Martin RM, Chang JP |
497 - 502 |
X-ray photoelectron spectroscopic observation on B-C-N hybrids synthesized by on beam deposition of borazine Uddin MN, Shimoyama M, Baba Y, Sekiguchi T, Nagano M |
503 - 505 |
Temperature dependence of resistivity of Si-Ta film deposited by magnetron sputtering Berlicki TM, Prociow EL, Brzezinski J, Osadnik SJ |
506 - 511 |
Anti-emission characteristics of the grid coated with hafnium film Jiang J, Jiang BY, Ren CX, Feng T, Wang X, Liu XH, Zou SC |
512 - 519 |
Effects of substrate temperature on properties of pulsed dc reactively sputtered tantalum oxide films Jain P, Juneja JS, Bhagwat V, Rymaszewski EJ, Lu TM, Cale TS |
520 - 524 |
Etching of oxynitride thin films using inductively coupled plasma Kim B, Lee D, Kim NJ, Lee BT |
525 - 530 |
Surface and corrosion characteristics of carbon plasma implanted and deposited nickel-titanium alloy Poon RWY, Liu XY, Chung CY, Chu RK, Yeung KWK, Lu WW, Cheung KMC |
531 - 533 |
Rarefied gas flow through a long tube of variable radius Sharipov F, Bertoldo G |
534 - 538 |
Low- and high-resistivity silicon substrate characterization using the Al/silicon-rich oxide/Si structure with comparison to the metal oxide semiconductor technique Luna-Lopez A, Aceves-Mijares M, Malik O, Glaenzer R |
539 - 544 |
Kind of oxide-composed superhard nanomultilayer prepared by magnetron sputtering Wei L, Shao N, Mei FH, Li GY, Li JG |
545 - 550 |
Compositional study of silicon oxynitride thin films deposited using electron cyclotron resonance plasma-enhanced chemical vapor deposition technique Baumann H, Sah RE |
551 - 553 |
Characterization of a plasma produced by pulsed arc using an electrostatic double probe Garcia LA, Pulzara AO, Devia A, Restrepo E |
554 - 558 |
Axial-symmetric transmission gauge: Extension of its pressure measuring range and reduction of the electron stimulated desorption ion effect in ultrahigh vacuum Takahashi N, Yuyama J, Tuzi Y, Akimichi H, Arakawa I |
559 - 563 |
Thermoelectric characterization of sputter-deposited Bi/Te bilayer thin films Liao CN, Kuo SW |
564 - 569 |
Low temperature rf sputtering deposition of (Ba, Sr) TiO3 thin film with crystallization enhancement by rf power supplied to the substrate Yoshimaru M, Takehiro S, Abe K, Onoda H |
570 - 576 |
Method and setup for photodesorption measurements for a nonevaporable-getter-coated vacuum chamber Malyshev OB, Anashin VV, Dostovalov RV, Fedorov NV, Krasnov AA, Collins IR, Ruzinov VL |
577 - 578 |
Summary: Update to ASTM guide E 1523 to charge control and charge referencing techniques in x-ray photoelectron spectroscopy Baer DR |