1087 - 1092 |
Deposition of preferred-orientation ZnO films on the ceramic substrates and its application for surface acoustic wave filters Chu SY, Chen TY, Water W |
1093 - 1100 |
Reactive etching of platinum-manganese using a pulse-timo-modulated chlorine plasma and a H-2 plasma post-etch corrosion treatment Kumagai S, Shiraiwa T, Samukawa S |
1101 - 1104 |
Interfacial reaction effect on the ohmic properties of a Pt/Pd/Au contact on p-type GaN Kim HK, Adesida I, Seong TY |
1105 - 1109 |
Growth of diamond film on single crystal lithium niobate for surface acoustic wave devices Jagannadham K, Lance MJ, Watkins TR |
1110 - 1114 |
Anisotropic infrared optical properties of GaN and sapphire Yu G, Rowell NL, Lockwood DJ |
1115 - 1119 |
Study of the optical properties of SiOxNy thin films by effective medium theories Tan X, Wojcik J, Mascher P |
1120 - 1123 |
Pretreatment technique forsurface improvement of Ru films in Ru-metalorganic chemical vapor deposition Han H, Kim JJ, Yoon DY |
1124 - 1128 |
Plasma-assisted growth of bilayer silicon-containing coatings for hardness and corrosion resistance Xiao ZG, Mantei TD |
1129 - 1133 |
Interfacial analysis using time-of-flight medium energy backscattering Geil RD, Rogers BR, Song Z, Weller RA |
1134 - 1138 |
Thickness uniformity of large-area double-sided thin films simultaneously deposited with biaxial substrate rotation Tao BW, Deng XW, Zhang Y, Li YR |
1139 - 1145 |
Effect of low substrate, deposition temperature on the optical and electrical properties of Al2O3 doped ZnO films fabricated by ion beam sputter deposition Seong JW, Kim KH, Beag YW, Koh SK, Yoon KH |
1146 - 1151 |
Properties of high-k/ultrahigh purity silicon nitride stacks Shi X, Shriver M, Zhang Z, Higman T, Campbell SA |
1152 - 1157 |
Spectroscopic-ellipsometry characterization of the interface layer of PbZr0.40Ti0.60O3/LaNiO3/Pt multilayer thin films Hu ZG, Huang ZM, Wu YN, Wang GS, Meng XJ, Shi FW, Chu JH |
1158 - 1165 |
Amorphous fluorocarbon polymer (a-C : F) films obtained by plasma enhanced chemical vapor deposition from perfluoro-octane (C8F18) vapor. II. Dielectric and insulating properties Biloiu C, Biloiu IA, Sakai Y, Sugawara H, Ohta A |
1166 - 1168 |
Etching yield Of SiO2 irradiated by F+, CFx+ (x=1,2,3) ion with energies from 250 to 2000 eV Karahashi K, Yanai K, Ishikawa K, Tsuboi H, Kurihara K, Nakamura M |
1169 - 1174 |
Theoretical study on deposition temperature during arc ion plating Huang MD, Lee YP, Dong C, Wen LS |
1175 - 1181 |
Atomic layer deposition of hafnium oxide and hafnium silicate thin films using liquid precursors and ozone Senzaki Y, Park S, Chatham H, Bartholomew L, Nieveen W |
1182 - 1187 |
Characteristics of rapid-thermal-annealed LiCoO2 cathode film for an all-solid-state thin film microbattery Kim HK, Yoon YS |
1188 - 1190 |
Epitaxial Si/Si(001) thin films obtained by solid phase crystallization Kim HJ, Jeon SH, Jeon TY, Noh DY |
1191 - 1194 |
Electrical characterization of B-10 doped diamond irradiated with low thermal neutron fluence Reed ML, Reed MJ, Jagannadham K, Verghese K, Bedair SM, El-Masry N, Butler JE |
1195 - 1199 |
Internal structure of TiAlN/VN coating deposited on sharp edges by ion-assisted physical vapor deposition Macak EB, Rodenburg JM |
1200 - 1207 |
Microstructure of plasma-deposited SiO2/TiO2 optical films Larouche S, Szymanowski H, Klemberg-Sapieha JE, Martinu L, Gujrathi SC |
1208 - 1217 |
Microstructure and mechanical properties of Ir-Ta coatings on nickel-base single-crystal superalloy TMS-75 Kuppusami P, Murakami H, Ohmura T |
1218 - 1222 |
Experiments and theoretical explanation of droplet elimination phenomenon in pulsed-bias arc deposition Lin GQ, Zhao YH, Guo HM, Wang DZ, Dong C, Huang RF, Wen LS |
1223 - 1228 |
Incorporation of fluorine in hydrogenated silicon carbide films deposited by pulsed glow discharge Jacobsohn LG, Afanasyev-Charkin IV, Cooke DW, Schulze RK, Averitt RD, Nastasi M |
1229 - 1234 |
Stoichiometry dependence of hardness, elastic properties, and oxidation resistance in TiN/SiNx nanocomposites deposited by a hybrid process Haug FJ, Schwaller P, Wloka J, Patscheider J, Karimi A, Tobler M |
1235 - 1241 |
Effects of oxygen contents on the electrical and optical properties of indium molybdenum oxide films fabricated by high density plasma-evaporation Sun SY, Huang JL, Lii DF |
1242 - 1259 |
Integrated feature scale modeling of plasma processing of porous and solids SiO2. I. Fluorocarbon etching Sankaran A, Kushner MJ |
1260 - 1274 |
Integrated feature scale modeling of plasma processing of porous and solid SiO2. II. Residual fluorocarbon polymer stripping and barrier layer deposition Sankaran A, Kushner MJ |
1275 - 1284 |
Room temperature synthesis of porous SiO2 thin films by plasma enhanced chemical vapor deposition Barranco A, Cotrino J, Yubero F, Espinos JP, Gonzalez-Elipe AR |
1285 - 1289 |
Atomic layer deposition of hafnium silicate films using hafnium tetrachloride and tetra-n-butyl orthosilicate Kim WK, Rhee SW, Lee NI, Lee JH, Kang HK |
1290 - 1292 |
Growth condition dependence of structure and surface morphology of GaN films on (III)GaAs substrates prepared by reactive sputtering Guo QX, Lu WJ, Zhang D, Tanaka T, Nishio M, Ogawa H |
1295 - 1295 |
An international journal devoted vaccum, surfaces, and films - Preface Lucovsky G |
1297 - 1300 |
Improved adhesion of amorphous carbon thin films on glass by plasma treatment Takeda S, Suzuki S |
1301 - 1308 |
Spectroscopic characterization of high k dielectrics: Applications to interface electronic structure and stability against chemical phase separation Krug C, Lucovsky G |
1309 - 1314 |
Wettability control of a polymer surface through 126 nm vacuum ultraviolet light irradiation Hozumi A, Shirahata N, Nakanishi Y, Asakura S, Fuwa A |
1315 - 1318 |
Effect of thickness on ferroelectric properties of Bi3.25La0.75Ti3O12 thin films on Pt/Ti/SiO2/Si substrates Kim KT, Song SH, Kim CI |
1319 - 1325 |
Optical, structural, and electrical characteristics of high dielectric constant zirconium oxide thin films deposited by spray pyrolysis Aguilar-Frutis M, Reyna-Garcia G, Garcia-Hipolito M, Guzman-Mendoza J, Falcony C |
1326 - 1330 |
Surface analysis of oxygen free electrolytic-copper X-band accelerating structures and possible correlation to radio frequency breakdown events Harvey SE, Le Pimpec F, Kirby RE, Marcelja F, Adamson K, Garwin EL |
1331 - 1336 |
Valence band x-ray photoelectron spectroscopic studies of phosphorus oxides and phosphates Gaskell KJ, Smith MM, Sherwood PMA |
1337 - 1341 |
Observation of bulk HfO2 defects by spectroscopic ellipsometry Takeuchi H, Ha D, King TJ |
1342 - 1346 |
Characteristics of high-k gate dielectric formed by the oxidation of sputtered Hf/Zr/Hf thin films on the Si substrate Kim HD, Roh Y, Lee JE, Kang HB, Yang CW, Lee NE |
1347 - 1350 |
Effects of annealing of HfSixOy/HfO2 high-k gate oxides temperature on the characteristics Kim HD, Roh Y, Lee Y, Lee JE, Jung D, Lee NE |
1351 - 1355 |
Cubic inclusions in 4H-SIC studied with ballistic electron-emission microscopy Ding Y, Park KB, Pelz JP, Palle KC, Mikhov MK, Skromme BJ |
1356 - 1360 |
Displacive phase transition in SrTiO3 thin films grown on Si(001) Aguirre-Tostado FS, Herrera-Gomez A, Woicik JC, Droopad R, Yu Z, Schlom DG, Karapetrova J, Zschack P, Pianetta P |
1361 - 1370 |
Self-aligned silicides for ohmic contacts in complementary metal-oxide-semiconductor technology: TiSi2, CoSi2 and NiSi Zhang SL, Smith U |
1371 - 1374 |
Magnetization dynamics and magnetotransport in epitaxial nanostructures Lukaszew RA, Pearson D, Zhang Z, Zambano A |
1375 - 1378 |
Arrays of magnetoresistive sensors for nondestructive testing Nazarov AV, da Silva FCS, Pappas DP |
1379 - 1382 |
Texture orientation of glancing angle deposited copper nanowire arrays Alouach H, Mankey GJ |
1383 - 1387 |
Fabrication and characterization of a capacitive micromachined shunt switch Firebaugh SL, Charles HK, Edwards RL, Keeney AC, Wilderson SF |
1388 - 1396 |
Investigation of nanotribological and nanomechanical properties of the digital micromirror device by atomic force microscopy Liu HW, Bhushan B |
1397 - 1405 |
Nanoscale fatigue and fracture toughness measurements of multilayered thin film structures for digital micromirror devices Wei GH, Bhushan B, Jacobs SJ |
1406 - 1409 |
Hydrogen pressure dependence of trench corner rounding during hydrogen annealing Kuribayashi H, Shimizu R, Sodoh K, Iwasaki H |
1410 - 1414 |
Development of a continuous generation/supply system of highly concentrated ozone gas for low-temperature oxidation process Ichimura S, Nonaka H, Morikawa Y, Noyori T, Nishiguchi T, Kekura M |
1415 - 1419 |
Power supply with arc handling for high peak power magnetron sputtering Christie DJ, Tomasel F, Sproul WD, Carter DC |
1420 - 1424 |
Measurement of energy flux at the substrate in a magnetron sputter system using an integrated sensor Ekpe SD, Dew SK |
1425 - 1427 |
Exploration of the chemical bonding forms of alkoxy-type organic monolayers directly attached to silicon Saito N, Lee SH, Maeda N, Ohta R, Sugimura H, Takai O |
1428 - 1432 |
Photochemical reaction of organosilane self-assembled monolayer as studied by scanning probe microscopy Sugimura H, Saito N, Ishida Y, Ikeda I, Hayashi K, Takai O |
1433 - 1438 |
Self-organizing processes in connection with metastable nanocluster states Rieth M, Schommers W |
1439 - 1443 |
Simultaneous dynamic stiffness and extension profiles of single titin molecules: Nanomechanical evidence for unfolding intermediates Forbes JG, Wang K |
1444 - 1449 |
Microelectromechanical system device for calibration of atomic force microscope cantilever spring constants, between 0.01 and 4 N/m Cumpson PJ, Hedley J, Clifford CA, Chen XY, Allen S |
1450 - 1454 |
Adsorption of oxidizing gases on multiwalled carbon nanotubes Valentini L, Lozzi L, Picozzi S, Cantalini C, Santucci S, Kenny JM |
1455 - 1460 |
Field emission device with back gated structure Mammana VP, Jaeger D, Shenderova O, McGuire GE |
1461 - 1465 |
Growth behavior and interfacial reaction between carbon nanotubes and Si substrate Hsu CM, Lai HJ, Kuo CT |
1466 - 1470 |
Ozone adsorption on carbon nanotubes: Ab initio calculations and experiments Picozzi S, Santucci S, Lozzi L, Cantalini C, Baratto C, Sberveglieri G, Armentano I, Kenny JM, Valentini L, Delley B |
1471 - 1476 |
Iron-carbide cluster thermal dynamics for catalyzed carbon nanotube growth Ding F, Bolton K, Rosen A |
1477 - 1481 |
Au/CuPc interface: Photoemission investigation Lozzi L, Santucci S, La Rosa S |
1482 - 1487 |
Interaction between metals and organic semiconductors studied by Raman spectroscopy Zahn DRT, Salvan G, Paez BA, Scholz R |
1488 - 1492 |
Contact potential difference measurements of doped organic molecular thin films Chan C, Gao WY, Kahn A |
1493 - 1499 |
Use of reactive gases with broad-beam radio frequency ion sources for industrial applications Schneider S, Jolly TW, Kohlstedt H, Waser R |
1500 - 1505 |
Direct trim etching process of Si/SiO2 gate stacks using 193 nm ArF patterns Tan KM, Yoo WJ, Ma HHH, Li F, Chan L |
1506 - 1512 |
50 nm gate electrode patterning using a neutral-beam etching system Noda S, Nishimori H, Ida T, Arikado T, Ichiki K, Ozaki T, Samukawa S |
1513 - 1518 |
Mechanisms of silicon nitride etching by electron cyclotron resonance plasmas using SF6- and NF3-based gas mixtures Reyes-Betanzo C, Moshkalyov SA, Ramos ACS, Swart JW |
1519 - 1523 |
Etching properties of lead-zirconate-titanate thin films in Cl-2/Ar and BCl3/Ar gas chemistries Koo SM, Kim DP, Kim KT, Song SH, Kim C |
1524 - 1529 |
Modeling of the target surface modification by reactive ion implantation during magnetron sputtering Depla D, Chen ZY, Bogaerts A, Ignatova V, De Gryse R, Gijbels R |
1530 - 1535 |
Effect of plasma flux, composition on the nitriding rate of stainless steel Muratore C, Walton SG, Leonhardt D, Fernsler RF, Blackwell DD, Meger RA |
1536 - 1539 |
Correlation between volume fraction of clusters incorporated into a-Si : H films and hydrogen content associated with Si-H-2 bonds in the films Koga K, Kaguchi N, Shiratani M, Watanabe Y |
1540 - 1545 |
Metallic tin reactive sputtering in a mixture Ar-O-2: Comparison between an amplified and a classical magnetron discharge Snyders R, Gouttebaron R, Dauchot JP, Hecq M |
1546 - 1551 |
Selective plasma-induced deposition of fluorocarbon films on metal surfaces for actuation in microfluidics Bayiati P, Tserepi A, Gogolides E, Misiakos K |
1552 - 1558 |
Investigation of etching properties of HfO based high-K dielectrics using inductively coupled plasma Chen JH, Yoo WJ, Tan ZYL, Wang YQ, Chan DSH |
1559 - 1563 |
Selective etching process of SrBi2Ta2O9 and CeO2 for self-aligned ferroelectric gate structure Shim SII, Kwon YS, Kim SII, Kim YT |
1564 - 1571 |
Intercomparison of silicon dioxide thickness measurements made by multiple techniques: The route to accuracy Seah MP |
1572 - 1578 |
Thickness and composition of ultrathin SiO2 layers on Si van der Marel C, Verheijen MA, Tamminga Y, Pijnenburg RHW, Tombros N, Cubaynes F |
1579 - 1586 |
Multivariate statistical analysis for x-ray photoelectron spectroscopy spectral imaging: Effect of image acquisition time Peebles DE, Ohlhausen JA, Kotula PG, Hutton S, Blomfield C |
1587 - 1590 |
Effect of substrate temperature on crystal orientation and residual stress in radio frequency sputtered gallium-nitride films Kusaka K, Hanabusa T, Tominaga K, Yamauchi N |
1591 - 1595 |
Textured growth of cubic gallium nitride thin films on Si(100) substrates by sputter deposition Kim JH, Holloway PH |
1596 - 1599 |
Real time optical characterization of gas flow dynamics in high-pressure chemical vapor deposition Woods V, Born H, Strassburg M, Dietz N |
1600 - 1605 |
Morphological evolution of III-V semiconductors and SiO2 during low energy electron enhanced dry etching Lee SH, Ho RM, Goorsky MS, Gillis HP, Margolese DI, Demine MA, Anz SJ |
1606 - 1609 |
Electronic and optical properties of GaAsN/GaAs quantum wells: A tight-binding study Shtinkov N, Turcotte S, Beaudry JN, Desjardins P, Masut RA |
1610 - 1614 |
Functional profile coatings and film stress Liu C, Conley R, Macrander AT |
1615 - 1619 |
Photoinduced decomposition of alkyl monolayers using 172 nm vacuum ultraviolet light Shirahata N, Oda K, Asakura S, Fuwa A, Yokogawa Y, Kameyama T, Hozumi A |
1620 - 1624 |
Reaction intermediates in high temperature catalytic water formation studied with cavity ringdown spectroscopy Hemdal S, Johansson A, Forsth M, Andersson M, Rosen A |
1625 - 1630 |
Photoemission study of the translational energy induced oxidation processes on Cu(111) Moritani K, Okada M, Sato S, Goto S, Kasai T, Yoshigoe A, Teraoka Y |
1631 - 1635 |
Organic molecules on zirconium surfaces Stojilovic N, Ramsier RD |
1636 - 1639 |
Preparation and characterization of magnetron sputtered, ultra-thin Cr0.63Mo0.37 films on MgO Meyvantsson I, Olafsson S, Johnsen K, Gudmundsson JT |
1640 - 1646 |
Fourier transform infrared study of methanol, water, and acetic acid on MgO(100) Foster M, Passno D, Rudberg J |
1647 - 1651 |
Laser-etched silicon pillars and their porosification Mills D, Kolasinski KW |
1652 - 1658 |
Ethanol reactions over Au-Rh/CeO2 catalysts. Total decomposition and H-2 formation Sheng PY, Idriss H |
1659 - 1666 |
Coupling reactions of trifluoroethyl iodide on GaAs(100) Singh NK, Kemp NT, Paris N, Balan V |
1667 - 1670 |
Scanning tunneling microscopy studies of oxide growth and etching on Si(5512) Skrobiszewski JL, Moore JC, Dickinson JW, Baski AA |
1671 - 1674 |
Buckling of Si and Ge(111)2x1 surfaces Nie S, Feenstra RM, Lee JY, Kang MH |
1675 - 1681 |
Studies of the electronic structure at the Fe3O4-NiO interface Wang HQ, Gao WW, Altman EI, Henrich VE |
1682 - 1689 |
Surface phase transitions and related surface defect structures upon reduction of epitaxial WO3(100) thin films: A scanning tunneling microscopy study Li M, Altman EI, Posadas A, Ahn CH |
1690 - 1696 |
Surface composition and structure of Co3O4(110) and the effect of impurity segregation Petitto SC, Langell MA |
1697 - 1704 |
Reactive-environment, hollow cathode sputtering: Basic characteristics and application to Al2O3, doped ZnO, and In2O3 : MO Delahoy AE, Guo SY, Paduraru C, Belkind A |
1705 - 1710 |
Transparent conducting amorphous Zn-Sn-O films deposited by simultaneous dc sputtering Moriga T, Hayashi Y, Kondo K, Nishimura Y, Murai K, Nakabayashi I, Fukumoto H, Tominaga K |
1711 - 1715 |
Highly transparent and conductive ZnO : Al thin films prepared by vacuum arc plasma evaporation Miyata T, Minamino Y, Ida S, Minami T |
1716 - 1722 |
Ultrahigh barrier coating deposition on polycarbonate substrates Schaepkens M, Kim TW, Erlat AG, Yan M, Flanagan KW, Heller CM, McConnelee PA |
1723 - 1725 |
Stretchable wavy metal interconnects Jones J, Lacour SP, Wagner S, Suo ZG |
1726 - 1729 |
Properties of indium zinc oxide thin films on heat withstanding plastic substrate Hara H, Hanada T, Shiro T, Yatabe T |
1730 - 1733 |
Anneal behavior of reactively sputtered HfN films Lannon J, Pace C, Goodwin S, Solomon S, Bryant P |
1734 - 1738 |
Spatially regulated growth of metal oxide thin film onto alkyl monolayer template from aqueous solution containing metal fluoride Shirahata N, Yokogawa Y, Kameyama T, Hozumi A |
1739 - 1742 |
Characteristics of Pt/Bi3.25La0.75Ti3O12/ZrO2/Si structures using ZrO2 as buffer layers for ferroelectric-gate field-effect transistors Lee JM, Kim KT, Kim CI |
1743 - 1745 |
Ferroelectric properties of lanthanide-doped Pb(Zr-0.6,Ti-0.4)O-3 thin films prepared by using a sol-gel method Son YH, Kim KT, Kim CI |
1746 - 1750 |
Luminescence behavior of Li-doped Gd2O3 : Eu3+ thin film phosphors grown by pulsed laser ablation Yi SS, Bae JS, Seo HJ, Jeong JH, Holloway PH |
1751 - 1756 |
Luminescent characteristics of Se-doped ZnGa2O4 : Mn thin film phosphors grown by pulsed laser ablation Jeong JH, Bae JS, Choi BC, Yi SS, Holloway PH |
1757 - 1762 |
Low resistivity polycrystalline ZnO : Al thin films prepared by pulsed laser deposition Tanaka H, Ihara K, Miyata T, Sato H, Minami T |
1763 - 1766 |
Analysis and modeling of low pressure chemical vapor deposition of phosphorus-doped polysilicon in commercial scale reactor Shimizu R, Ogino M, Sugiyama M, Shimogaki Y |
1767 - 1772 |
Study of rough growth fronts of evaporated polycrystalline gold films Munuera C, Aznarez JA, Rodriguez-Canas E, Oliva AI, Aguilar M, Sacedon JL |
1773 - 1777 |
Anisotropic growth of chromium films during sputter deposition on substrates in planetary motion Janssen GCAM, Alkemade PFA, Sivel VGM, Grachev SY, Kamminga JD |
1778 - 1784 |
Physical self-assembly and the nucleation of three-dimensional nanostructures by oblique angle deposition Karabacak T, Wang GC, Lu TM |
1785 - 1787 |
X-ray elastic constants of chromium nitride films deposited by arc-ion plating Hanabusa T, Miyagi K, Kusaka K |
1788 - 1792 |
Preparation of ternary alloy libraries for high-throughput screening of material properties by means of thick film deposition and interdiffusion: Benefits and limitations Rar A, Specht ED, George EP, Santella ML, Pharr GM |
1793 - 1798 |
Electron cyclotron resonance plasma sputtering growth of textured films of c-axis-oriented LiNbO3 on Si(100) and Si(111) surfaces Akazawa H, Shimada M |
1799 - 1803 |
Effect of purge pressure on desorbing water removal rate Hinkle LD |
1804 - 1809 |
Analysis of closed loop control and sensor for a reactive sputtering drum coater George MA, Craves EA, Shehab R, Knox K |
1810 - 1815 |
Theoretical and experimental evaluation of the windowless interface for the TRASCO-ADS project Michelato P, Bari E, Monaco L, Sertore D, Bonucci A, Giannantonio R, Urbano M, Viale L, Turroni P, Cinotti L |
1816 - 1819 |
Calibration apparatus for precise barometers and vacuum gauges Woo SY, Choi IM, Lee YJ, Hong SS, Chung KH |
1820 - 1827 |
Pumping characteristics of metal films in a vacuum glass vessel: Experimental and theoretical issues Bonucci A, Giannantonio R, Carretti C, Longoni G, Caterino AL, Urbano M |
1828 - 1835 |
Multidimensional flow modeling of the compression test of a Gaede pump stage in the viscous regime Giors S, Subba F |
1836 - 1841 |
Spatially defined immobilization of biomolecules on microstructured polymer substrate Hozumi A, Saito T, Shirahata N, Yokogawa Y, Kameyama T |
1842 - 1846 |
Photoexcited electrodeposition of Cu structures on p-Si(001) Scheck C, Liu YK, Evans P, Schad R, Bowers A, Zangari G, Williams JR, Issacs-Smith TF |
1847 - 1851 |
Sub-100 nm radius of curvature wide-band gap III-nitride vacuum microelectronic field emitter structures created by inductively coupled plasma etching Shah PB, Nichols BM, Derenge MD, Jones KA |
1852 - 1856 |
Electroless copper deposition as a seed layer on TiSiN barrier Ee YC, Chen Z, Xu S, Chan L, See KH, Law SB |
1857 - 1861 |
Deposition and field-emission characterization of electrically conductive nitrogen-doped diamond-like amorphous carbon films Kinoshita H, Ikuta R, Murakami S |
1862 - 1867 |
Efficient electrical spin injection in GaAs: A comparison between AlOx and Schottky injectors Van Dorpe P, Van Roy W, Motsny VF, Borghs G, De Boeck J |
1868 - 1872 |
Correlated structural and magnetization reversal studies on epitaxial Ni films grown with molecular beam epitaxy and with sputtering Zhang ZD, Lukaszew RA, Cionca C, Pan X, Clarke R, Yeadon M, Zambano A, Walko D, Dufresne E, te Velthius S |
1873 - 1878 |
Stacked polymer patterns imprinted using a soft inkpad Kong YP, Tan L, Pang SW, Yee AF |
1879 - 1884 |
Local oxidation of metal and metal nitride films Farkas N, Tokash JC, Zhang G, Evans EA, Ramsier RD, Dagata JA |
1885 - 1891 |
Large magnetic field effects in organic light emitting diodes based on tris(8-hydroxyquinoline aluminum) (Alq(3))/IN,N'-Di(naphthalen-1-yl)-N,N' diphenyl-benzidine (NPB) bilayers Davis AH, Bussmann K |
1892 - 1895 |
Polymeric aperture masks for high performance organic integrated circuits Muyres DV, Baude PF, Theiss S, Haase M, Kelley TW, Fleming P |
1896 - 1902 |
Simulation of SiO2 and Si feature etching for microelectronics and microelectromechanical systems fabrication: A combined simulator coupling modules of surface etching, local flux calculation, and profile evolution Kokkoris G, Tserepi A, Boudouvis AG, Gogolides E |
1903 - 1907 |
Anisotropic deposition of Cu in trenches by H-assisted plasma chemical vapor deposition Takenaka K, Kita M, Kinoshita T, Koga K, Shiratani M, Watanabe Y |
1908 - 1911 |
Effect of Mn composition on characterization of Zn1-xMnxSe epilayers Yu YM, Kim DJ, Lee KJ, Choi YD, Byungsung O, Lee KS |
1912 - 1916 |
Self-organized template formation for quantum dot ordering Notzel R, Mano T, Wolter JH |
1917 - 1925 |
Self-assembled organic thin films on electroplated copper for prevention of corrosion Tan YS, Srinivasan MP, Pehkonen SO, Chooi SYM |