L5 - L8 |
Plasma-assisted atomic layer deposition of TiN monitored by in situ spectroscopic ellipsometry Heil SBS, Langereis E, Kemmeren A, Roozeboom F, de Sanden MCMV, Kessels WMM |
581 - 588 |
In situ examination of tin oxide atomic layer deposition using quartz crystal microbalance and Fourier transform infrared techniques Du X, Du Y, George SM |
589 - 592 |
Characterization of nitrogen distribution in HfO2 with low energy secondary ion mass spectrometry Jiang ZX, Kim K, Lerma J, Sieloff D, Luo TY, Yang JY, Triyoso D, Tseng H, Tobin P, Ramani N |
593 - 598 |
Microstructure and nanohardness properties of Zr-Al-N and Zr-Cr-N thin films Lamni R, Sanjines R, Parlinska-Wojtan M, Karimi A, Levy F |
599 - 604 |
Inhibition of excess interface Si atom generation in 700 degrees C-grown pyrolytic-gas passivated ultrathin silicon oxide films Yamada H |
605 - 608 |
Enlargement of grain in poly-Si by adding Au in Ni-mediated crystallization of amorphous Si using a SiNx cap layer Kim KH, Oh JH, Kim EH, Jang J, Kang JY, Oh KH |
609 - 612 |
Sb-induced reconstruction of the Si(112) surface Cho ES, Kim MK, Hur H, Park JW, Baik JY, Kim NH, Park CY, An KS |
613 - 616 |
Adsorption and reactions of tetrabutoxysilane (TBOS) on Si(100) Lee NY, Yong KJ, Jeong HS, Kim CM |
617 - 620 |
Clean wurtzite InN surfaces prepared with atomic hydrogen Piper LFJ, Veal TD, Walker M, Mahboob I, McConville CF, Lu H, Schaff WJ |
621 - 627 |
Microstructural evolution of AIN coatings synthesized by unbalanced magnetron sputtering Wang CC, Lu CJ, Shiao MH, Shieu FS |
628 - 630 |
Study on strain and piezoelectric polarization of AlN thin films grown on Si Deng YZ, Kong YC, Zheng YD, Zhou CH, Xi DJ, Chen P, Gu SL, Shen B, Zhang R, Han P, Jiang R, Shi Y |
631 - 633 |
Chromium diboride thin films by low temperature chemical vapor deposition Jayaraman S, Klein EJ, Yang Y, Kim DY, Girolami GS, Abelson JR |
634 - 642 |
Studies of film deposition in fluorocarbon plasmas employing a small gap structure Zheng L, Ling L, Hua XF, Oehrlein GS, Hudson EA |
643 - 650 |
Control of dissociation by varying oxygen pressure in noble gas admixtures for plasma processing Taylor KJ, Tynan GR |
651 - 657 |
Dual radio-frequency discharges: Effective frequency concept and effective frequency transition Kim HC, Lee JK |
658 - 662 |
Effect of plating current density and annealing on impurities in electroplated Cu film Liu CW, Wang YL, Tsai MS, Feng HP, Chang SC, Hwang GJ |
663 - 665 |
Study of optical recording bits by scanning surface potential microscopy Chen SH, Lin CW, Lin WC, Tsai DP |
666 - 670 |
Surface modification of silicon-containing fluorocarbon films prepared by plasma-enhanced chemical vapor deposition Jin YY, Desta Y, Goettert J, Lee GS, Ajmera PK |
671 - 675 |
High-energy ions and atoms sputtered and reflected from a magnetron source for deposition of magnetic thin films Matsui H, Toyoda H, Sugai H |
676 - 680 |
Apparatus for laminar-turbulent transition in gases Hinkle LD, Muriel A |
681 - 686 |
Mechanical behavior and oxidation resistance of Cr(Al)N coatings Sanchez-Lopez JC, Martinez-Martinez D, Lopez-Cartes C, Fernandez A, Brizuela M, Garcia-Luis A, Onate JI |
687 - 692 |
ICP etching of III-nitride based laser structure with Cl-2-Ar plasma assisted by Si coverplate material Zhirnov E, Stepanov S, Gott A, Wang WN, Shreter YG, Tarkhin DV, Bochkareva NI |
693 - 698 |
Structural modifications and corrosion behavior of martensitic stainless steel nitrided by plasma immersion ion implantation Figueroa CA, Alvarez F, Zhang Z, Collins GA, Short KT |
699 - 704 |
Oxygen ion energy distribution: Role of ionization, resonant, and nonresonant charge-exchange collisions Babaeva NY, Lee JK, Shon JW, Hudson EA |
705 - 712 |
Electronic and optical properties of Ta1-xZrxN films: Experimental and ab initio studies Aouadi SM, Bohnhoff A, Amriou T, Haasch RT, Williams M, Hilfiker JN |
713 - 719 |
Contribution of bottom-emitted radicals to the deposition of a film on the SiO2 sidewall during CHF3 plasma etching Lee GR, Min JH, Lee JK, Kang SK, Moon SH |
720 - 721 |
Comment on "Plasma etching of high dielectric constant materials on silicon in halogen plasma chemistries" by L. Sha and J.P. Chang [J. Vac. Sci. Technol. A 22, 88 (2004)] Stafford L, Margot J |
722 - 724 |
Design for a kinematic, variable flux microcapillary array molecular beam doser Fisher GL, Meserole CA |
725 - 726 |
Pressure compensation for a radiation-induced current caused in a vacuum gauge cable in the SPring-8 storage ring Magome T, Saeki H |
729 - 729 |
Papers from the 51st International Symposium of AVS - Preface Lucovsky G |
731 - 736 |
Assembly of hydrothermally synthesized tin oxide nanocrystals Shirahata N, Hozumi A, Asakura S, Fuwa A, Sakka Y |
737 - 740 |
Chemical mechanical planarization characteristics of WO3 thin film for gas sensing Seo YJ, Kim NH, Chang EG, Park J, Ko PJ, Lee WS |
741 - 745 |
Algorithm for automatic x-ray photoelectron spectroscopy data processing and x-ray photoelectron spectroscopy imaging Tougaard S |
746 - 750 |
Maximum likelihood principal component analysis of time-of-flight secondary ion mass spectrometry spectral images Keenan MR |
751 - 754 |
Deposition of lipid bilayers on OH-density-controlled silicon dioxide surfaces Tero R, Urisu T, Okawara H, Nagayama K |
755 - 760 |
In situ formation of bioactive titanium coating using reactive plasma spraying Inagaki M, Yokogawa Y, Kameyama T |
761 - 763 |
Photoacoustic analysis of bone osteogenesis to different doses of laser irradiation Mejia PAL, Perez JLJ, Orea AC, Castrejon HV, Butron HL, Lira MM |
764 - 767 |
TiN/Ta2O5/PE-SiN/TiN metal-insulator-metal capacitor for radio frequency and mixed signal integrated circuit applications Chung YS, Kim KS, Ryu YS, Lee D, Hwang SB, Shin CS, Park SK, Lee JG |
768 - 772 |
Structural and optical properties of erbium-doped Ba0.7Sr0.3TiO3 thin films Kuo SY, Hsieh WF |
773 - 776 |
Comparison of forming gas effects on the ferroelectric properties between more-oriented and less-oriented Pb(Zr0.52Ti0.48)O-3 thin films Lee ES, Chung HW, Lim SH, Lee SY |
777 - 780 |
Effect of Mn composition of characterization of Zn1-xMnxS epilayers Yu YM, Kim DJ, Eom SH, Choi YD, Kim TH, O B |
781 - 784 |
Low-temperature studies of magnetic phases of the interfacial layers for Co/Ge(100) and Co/Ge(111) films Tsay JS, Su CW, Hwang CH, Yao YD |
785 - 789 |
Growth and characterization of epitaxial FexPt100-x films on MgO(111) Mani P, Krishnamurthy VV, Maat S, Kellock AJ, Robertson JL, Mankey GJ |
790 - 795 |
Structure and magnetism of ultrathin Co film grown on Pt(100) Pan MH, He K, Zhang LJ, Jia JF, Xue QK, Kim W, Qiu ZQ |
796 - 803 |
Magnetic response of nanostructured systems: A ferromagnetic resonance investigation Lindner J, Wiedwald U, Baberschke K, Farle M |
804 - 810 |
Nanotribological characterization of fluoropolymer thin films for biomedical micro/nanoelectromechanical system applications Lee KK, Bhushan B, Hansford D |
811 - 819 |
Microfabrication and nanomechanical characterization of polymer microelectromechanical system for biological applications Wei GH, Bhushan B, Ferrell N, Hansford D |
820 - 823 |
Piezoelectric and dielectric properties of Pb(Zr,Ti)O-3-Pb(Mn,W,Sb,Nb)O-3 with Ag2O addition Chung HW, Lim SH, Lee ES, Kim GH, Lee SY |
824 - 829 |
Process integration for through-silicon vias Spiesshoefer S, Rahman Z, Vangara G, Polamreddy S, Burkett S, Schaper L |
830 - 835 |
Durability studies of micro/nanoelectromechanical systems materials, coatings and lubricants at high sliding velocities (up to 10 mm/s) using a modified atomic force microscope Tambe NS, Bhushan B |
836 - 840 |
Tribological and wear studies of coatings fabricated by atomic layer deposition and by successive ionic layer adsorption and reaction for microelectromechanical devices Nistorica C, Liu JF, Gory I, Skidmore GD, Mantiziba FM, Gnade BE, Kim J |
841 - 845 |
Frequency-tuning for control of parametrically resonant mass sensors Zhang WH, Turner KL |
846 - 850 |
SPM oxidation and parallel writing on zirconium nitride thin films Farkas N, Comer JR, Zhang G, Evans EA, Ramsier RD, Dagata JA |
851 - 855 |
Fabrication of NiSi2 nanocrystals embedded in SiO2 with memory effect by oxidation of the amorphous Si/Ni/SiO2 structure Yeh PH, Wu HH, Yu CH, Chen LJ, Liu PT, Hsu CH, Chang TC |
856 - 861 |
Optical properties of porous nanostructured Y2O3: Eu thin films Hrudey PCP, Taschuk M, Tsui YY, Fedosejevs R, Brett MJ |
862 - 868 |
Investigation of the interfacial reaction between,metal and fluorine-contained polyimides Yang CY, Chen JS, Hsu SLC |
869 - 874 |
X-ray photoemission spectroscopy and Fourier transform infrared studies of dye molecule doped conducting polymer films Kato H, Takemura S, Nishikawa O, Taniguchi M |
875 - 879 |
Organic polymer thin films deposited on silicon and copper by plasma-enhanced chemical vapor deposition method and characterization of their electrochemical and optical properties Bae IS, Cho SH, Park ZT, Kim JG, Boo JH |
880 - 885 |
Study of the room temperature molecular memory observed from a nanowell device Gergel N, Majumdar N, Keyvanfar K, Swami N, Harriott LR, Bean JC, Pattanaik G, Zangari G, Yao Y, Tour JM |
886 - 889 |
Photoresist stripping after low-k dielectric layer patterning using axial magnetic field assisted reactive ion etching Song HY, Kim CW, Park SG, Yang JK, Lee CW |
890 - 893 |
Dry etching of (Pb,Sr)TiO3 thin films using inductively coupled plasma Kim GH, Kim JS, Kim KT, Kim DP, Kim CI |
894 - 897 |
Dry etching of (Ba,Sr)TiO3 thin films using an inductively coupled plasma Kim GH, Kim KT, Kim CI |
898 - 904 |
Investigation of process window during dry etching of ZnO thin films by CH4-H-2-Ar inductively coupled plasma Na SW, Shin MH, Chung YM, Han JG, Lee NE |
905 - 910 |
Characterization of a modified Bosch-type process for silicon mold fabrication Jo SB, Lee MW, Lee SG, Lee EH, Park SG, O BH |
911 - 916 |
Evaluation of silicon oxide cleaning using F-2/Ar remote plasma processing Kang SC, Hwang JY, Lee NE, Joo KS, Bae GH |
917 - 921 |
Electron heating in capacitively coupled discharges and reactive gases Franz G, Klick M |
922 - 926 |
Measurements and consequences of nonuniform radio frequency plasma potential due to surface asymmetry in large area radio frequency capacitive reactors Sansonnens L, Strahm B, Derendinger L, Howling AA, Hollenstein C, Ellert C, Schmitt JPM |
927 - 932 |
Uniformity study in large-area showerhead reactors Sobbia R, Sansonnens L, Bondkowski J |
933 - 937 |
Characterization of the cold atmospheric plasma hybrid source Bardos L, Barankova H |
938 - 946 |
Quantitative control of etching reactions on various SiOCH materials Tatsumi T, Urata K, Nagahata K, Saitoh T, Nogami Y, Shinohara K |
947 - 952 |
Inductively coupled plasma etching of poly-SiC in SF6 chemistries Kuah SH, Wood PC |
953 - 958 |
Study on self-aligned contact oxide etching using C5F8/O-2/Ar and C5F8/O-2/Ar/CH2F2 plasma Kim S, Choi D, Hong T, Park T, Kim D, Song Y, Kim C |
959 - 963 |
Hot hollow cathode diffuse arc deposition of chromium nitride films Barankova H, Bardos L, Gustavsson LE |
964 - 970 |
Investigation of etching properties of metal nitride/high-k gate stacks using inductively coupled plasma Hwang WS, Chen JH, Yoo WJ, Bliznetsov V |
971 - 977 |
Transparent hybrid inorganic/organic barrier coatings for plastic organic light-emitting diode substrates Kim TW, Yan M, Erlat G, McConnelee PA, Pellow M, Deluca J, Feist TP, Duggal AR, Schaepkens M |
978 - 981 |
Blue photoluminescence of Si nanocrystallites embedded in silicon oxide Kim GH, Kim JH, Jeon KA, Lee SY |
982 - 985 |
Realization of Mg((x=0.15))Zn((1-x=0.85))O-based metal-semiconductor-metal UV detector on quartz and sapphire Hullavarad SS, Dhar S, Varughese B, Takeuchi I, Venkatesan T, Vispute RD |
986 - 990 |
Stress reduction in sputter deposited films using nanostructured compliant layers by high working-gas pressures Karabacak T, Senkevich JJ, Wang GC, Lu TM |
991 - 997 |
Electrochemical characterization of plasma polymer coatings in corrosion protection of aluminum alloys Chan YF, Yu QS |
998 - 1005 |
Growth and characterization of nanocrystalline zirconium nitride-inconel structures Aouadi SM, Maeruf T, Sodergren M, Mihut DM, Rohde SL, Xu J, Mishra SR |
1006 - 1009 |
Oxidation behavior of titanium nitride films Chen HY, Lu FH |
1010 - 1012 |
Characterizations of the surfaces of shocked-Bi-Pb-Sr-Ca-Cu-O particles for a magnetic sensor Kezuka H, Yamagata K, Itoh M, Suzuki T, Kikuchi M, Atou T, Kawasaki M, Fukuoka K |
1013 - 1017 |
Temperature programmed desorption study of C6H12/Zr(0001) Stojilovic N, Tokash JC, McGinnis SP, Ramsier RD |
1018 - 1021 |
Plasma-based ion implantation sterilization technique and ion energy estimation Tanaka T, Watanabe S, Shibahara K, Yokoyama S, Takagi T |
1022 - 1028 |
Selective detection of Cr(VI) using a microcantilever electrode coated with a self-assembled monolayer Tian F, Boiadjiev VI, Pinnaduwage LA, Brown GM, Thundat T |
1029 - 1033 |
Site-selective electroless plating on amino-terminated diamond substrate patterned by 126 nm vacuum ultraviolet light lithography Hozumi A, Asakura S, Fuwa A, Shirahata N |
1034 - 1045 |
Nanotribological effects of hair care products and environment on human hair using atomic force microscopy LaTorre C, Bhushan B |
1046 - 1050 |
Magnetocrystalline anisotropy in glancing angle deposited Permalloy nanowire arrays Alouach H, Fujiwara H, Mankey GJ |
1051 - 1054 |
Reactivity of NO over K-deposited Pd(111) and surface structure of the catalyst Nakamura I, Hamada H, Fujitani T |
1055 - 1060 |
Epitaxial iron oxide growth on a stepped Pt(91111) surface Ketteler G, Ranke W |
1061 - 1066 |
Deconvolution of the Co3O4(110) Fuchs-Kliewer phonon spectrum Marsh EM, Petitto SC, Harbison GS, Wulser KW, Langell MA |
1067 - 1071 |
Spontaneous growth of Ag and Pb nanopucks on electronic patterns of 2D Pb quantum islands Chiu YP, Lin HY, Fu TY, Chang CS, Tsong TT |
1072 - 1077 |
Origin of the interface dipole at interfaces between undoped organic semiconductors and metals Knupfer M, Paasch G |
1078 - 1084 |
Carbon monoxide reaction with UO2(111) single crystal surfaces: A theoretical and experimental study Senanayake SD, Soon A, Kohlmeyer A, Sohnel T, Idriss H |
1085 - 1089 |
Vibrationally promoted emission of electrons from low work function surfaces: Oxygen and Cs surface coverage dependence White JD, Chen J, Matsiev D, Auerbach DJ, Wodtke AM |
1090 - 1099 |
Current research and development topics on gas cluster ion-beam processes Yamada I, Toyoda N |
1100 - 1106 |
Chlorination of hydrogen-terminated silicon(111) surfaces Rivillon S, Chabal YJ, Webb LJ, Michalak DJ, Lewis NS, Halls MD, Raghavachari K |
1107 - 1113 |
Effects of surface chemistry on ALD Ta3N5 barrier formation on low-k dielectrics Liu J, Bao J, Scharnberg M, Kim WC, Ho PS, Laxman R |
1114 - 1119 |
Tailored stoichiometries of silicon carbonitride thin films prepared by combined radio frequency magnetron sputtering and ion beam synthesis Bruns M, Geckle U, Trouillet V, Rudolphi M, Baumann H |
1120 - 1123 |
Photoluminescence behavior of Eu3+ activated Sr2SiO4 thin-film phosphors grown by pulsed-laser deposition Jeong JH, Moon BK, Bae JS, Yi SS, Kim JH, Park HL |
1124 - 1127 |
Luminescence characteristics of Eu-doped GdVO4 thin films grown by pulsed-laser deposition Yi SS, Bae JS, Shim KS, Moon BK, Jeong JH, Chung ST, Kim JH |
1128 - 1132 |
Preparation of transparent and conductive multicomponent Zn-In-Sn oxide thin films by vacuum arc plasma evaporation Minami T, Tsukada S, Minamino Y, Miyata T |
1133 - 1136 |
Removal characteristics of hillock on SnO2 thin film by chemical mechanical polishing process Seo YJ, Kim NH, Chang EG, Park J, Choi GW, Lee WS |
1137 - 1140 |
Fabrication of a Cu nanodot array based on electroless plating employing a diblock copolymer nanotemplate Asakura S, Hozumi A, Fuwa A |
1141 - 1145 |
Growth of strained Si on high-quality relaxed Si1-xGex with an intermediate Si1-yCy layer Lee SW, Chueh YL, Chen LJ, Chou LJ, Chen PS, Lee MH, Tsai MJ, Liu CW |
1146 - 1151 |
Area-selective assembly of high crystalline tin-doped-indium-oxide particles onto monolayer template Shirahata N, Sakka Y, Uchikoshi T, Hozumi A |
1152 - 1161 |
Comparison of the agglomeration behavior of thin metallic films on SiO2 Gadkari PR, Warren AP, Todi RM, Petrova RV, Coffey KR |
1162 - 1166 |
Relationship between the microstructure and the discharge characteristics of MgO protecting layer in alternating current plasma display panels Park SY, Lee MJ, Kim HJ, Moon SH, Kim SG, Kim JK |
1167 - 1172 |
Structural, electrical, and optical properties of transparent conductive In2O3-SnO2 films Sato Y, Tokumaru R, Nishimura E, Song PK, Shigesato Y, Utsumi K, Iigusa H |
1173 - 1179 |
Optimization of process parameters to achieve high quality as-deposited indium-tin oxide films for display applications Gupta S, Ada E |
1180 - 1186 |
Analysis on thermal properties of tin doped indium oxide films by picosecond thermoreflectance measurement Yagi T, Tamano K, Sato Y, Taketoshi N, Baba T, Shigesato Y |
1187 - 1191 |
Influence of sputtering parameter on the optical and electrical properties of zinc-doped indium oxide thin films Pan HC, Shiao MH, Su CY, Hsiao CN |
1192 - 1196 |
Effect of stress and density on the electrical and physical properties of MgO protecting layer for alternating current-plasma display panels Lee MJ, Park SY, Kim SG, Kim HJ, Moon SH, Kim JK |
1197 - 1201 |
Study of molybdenum back contact layer to achieve adherent and efficient CIGS2 absorber thin-film solar cells Kadam AA, Dhere NG, Holloway P, Law E |
1202 - 1207 |
Formation of chalcogen containing plasmas and their use in the synthesis of photovoltaic absorbers Kosaraju S, Repins I, Wolden CA |
1208 - 1214 |
Thin-film photovoltaics Dherea NG, Dhere RG |
1215 - 1220 |
Transparent and semitransparent conducting film deposition by reactive-environment, hollow cathode sputtering Delahoy AE, Guo SY |
1221 - 1227 |
Real-time optical monitoring of ammonia flow and decomposition kinetics under high-pressure chemical vapor deposition conditions Dietz N, Strassburg M, Woods V |
1228 - 1233 |
Optimal control on composition and optical properties of silicon oxynitride thin films Samano EC, Camacho J, Machorro R |
1234 - 1237 |
Structural and mechanical properties of dendrimer-mediated thin films Xu FTT, Thaler SM, Barnard JA |
1238 - 1243 |
Atomic layer deposition of nickel oxide films using Ni(dmamp)(2) and water Yang TS, Cho WT, Kim M, An KS, Chung TM, Kim CG, Kim Y |
1244 - 1251 |
John Ambrose Fleming and the beginning of electronics Dylla HF, Corneliussen ST |
1252 - 1259 |
Vacuum and the electron tube industry Redhead PA |
1260 - 1266 |
Vacuum microelectronic devices and vacuum requirements Tyler T, Shenderova OA, McGuire GE |
1267 - 1269 |
Real time quantitative diagnostic technique for measuring chemical vapor deposition precursors Yun JY, Chung KH, Moon DK |
1270 - 1275 |
Overview of the Spallation Neutron Source vacuum systems Ladd P, Crandall J, Hechler M, Henderson S, Kersevan R, Murdoch G, Tang J |
1276 - 1283 |
Micro- and nanoscale thermal phenomena in thin-film magnetic recording heads Ju YS |
1284 - 1289 |
Characterization of polycrystalline AIN films using variable-angle spectroscopic ellipsometry Wang LP, Shim DS, Ma O, Rao VR, Ginsburg E, Talalyevsky A |