| 2687 - 2692 |
X-Ray Photoelectron-Spectroscopy Characterization of Radio-Frequency Reactively Sputtered Carbon Nitride Thin-Films
Kumar S, Butcher KS, Tansley TL |
| 2693 - 2695 |
Measuring and Modeling Stresses in Al Metallization
Li ZH, Wu GY, Gu Y, Chen WR, Wang YY |
| 2696 - 2701 |
Reactive Magnetron Sputter-Deposited Cnx - Effects of N-2 Pressure and Growth Temperature on Film Composition, Bonding, and Microstructure
Zheng WT, Sjostrom H, Ivanov I, Xing KZ, Broitman E, Salaneck WR, Greene JE, Sundgren JE |
| 2702 - 2708 |
Effect of Gas-Composition and Bias Voltage on the Structure and Properties of A-C-H/SiO2 Nanocomposite Thin-Films Prepared by Plasma-Enhanced Chemical-Vapor-Deposition
Lee JH, Lee YH, Farouk B |
| 2709 - 2720 |
Influence of O-2(+) Energy, Flux, and Fluence on the Formation and Growth of Sputtering-Induced Ripple Topography on Silicon
Vajo JJ, Doty RE, Cirlin EH |
| 2721 - 2727 |
A Simulation-Model for Thickness Profile of the Film Deposited Using Planar Circular Type Magnetron Sputtering Sources
Hong S, Kim E, Bae BS, No K, Lim SC, Woo SG, Koh YB |
| 2728 - 2735 |
Influence of Adding Transition-Metal Elements to an Aluminum Target on Electrical-Resistivity and Hillock Resistance in Sputter-Deposited Aluminum-Alloy Thin-Films
Onishi T, Iwamura E, Takagi K, Yoshikawa K |
| 2736 - 2743 |
Influence of Electron-Diffusion on the Cathode Sheath of a Magnetron Discharge
Lister G |
| 2744 - 2756 |
Surface-Topography Development on Ion-Beam-Sputtered Surfaces - Role of Surface Inhomogeneity Induced by Ion-Beam Bombardment
Moon DW, Kim KJ |
| 2757 - 2765 |
Power Dissipation and Impedance Measurements in Radiofrequency Discharges
Spiliopoulos N, Mataras D, Rapakoulias DE |
| 2766 - 2774 |
Si/Xef2 Etching - Temperature-Dependence
Vugts MJ, Verschueren GL, Eurlings MF, Hermans LJ, Beijerinck HC |
| 2775 - 2779 |
Plasma Deposition of Low-Stress Electret Films for Electroacoustic and Solar-Cell Applications
Klembergsapieha JE, Martinu L, Wertheimer MR, Gunther P, Schellin R, Thielemann C, Sessler GM |
| 2780 - 2789 |
Si/Xef2 Etching - Reaction Layer Dynamics and Surface Roughening
Vugts MJ, Eurlings MF, Hermans LJ, Beijerinck HC |
| 2790 - 2794 |
Very High-Frequency Capacitively Coupled Discharges for Large-Area Processing
Meyyappan M, Colgan MJ |
| 2795 - 2801 |
Metal-Ion Production by Ion-Bombardment
Yamashita M |
| 2802 - 2813 |
Chemical Dry-Etching of Silicon-Nitride and Silicon Dioxide Using CF4/O-2/N-2 Gas-Mixtures
Kastenmeier BE, Matsuo PJ, Beulens JJ, Oehrlein GS |
| 2814 - 2819 |
Transient Characteristics of Nitrogen Gas-Pulsed Electron-Cyclotron-Resonance Plasma
Park YJ, Ozasa K, Okeeffe P, Aoyagi Y, Min SK |
| 2820 - 2826 |
Ion-Assisted Si/Xef2 Etching - Temperature-Dependence in the Range 100-1000 K
Vugts MJ, Hermans LJ, Beijerinck HC |
| 2827 - 2834 |
Mechanism of Selective SiO2/Si Etching with Fluorocarbon Gases (CF4, C4F8) and Hydrogen Mixture in Electron-Cyclotron-Resonance Plasma-Etching System
Doh HH, Kim JH, Lee SH, Whang KW |
| 2835 - 2841 |
Correlation Between Gas-Phase Composition of RF Plasma of Argon Diluted Tetraethylgermanium and Chemical-Structure of Therewith Deposited Ge/C Films
Gazicki M, Szymanowski H, Tyczkowski J, Schalko J, Olcaytug F |
| 2842 - 2848 |
Ion-Beam-Induced Chemical-Vapor-Deposition Procedure for the Preparation of Oxide Thin-Films .2. Preparation and Characterization of Alxtiyoz Thin-Films
Leinen D, Lassaletta G, Fernandez A, Caballero A, Gonzalezelipe AR, Martin JM, Vacher B |
| 2849 - 2853 |
Preparation of Polysiloxane Thin-Films Using CO2-Laser Evaporation Assisted by Remote Radical Source
Fujii T, Yokoi T, Hiramatsu M, Nawata M, Hori M, Goto T, Hattori S |
| 2854 - 2858 |
Slow Laser Deposition of High-Quality Erba2Cu3O7-X Thin-Films
Delvecchio A, Tapfer L, Berling D, Loegel B, Leggieri G, Luches A, Acquaviva S |
| 2859 - 2870 |
Model for a Large-Area Multifrequency Multiplanar Coil Inductively-Coupled Plasma Source
Yamada N, Ventzek PL, Date H, Sakai Y, Tagashira H |
| 2871 - 2874 |
Liquid-Phase Epitaxial-Growth of Hg1-X-Ycdxznyte and Hg1-X-Ycdxmnyte from Hg-Rich Solutions
Uchino T, Takita K |
| 2875 - 2878 |
Epitaxy Above 10(-5) Torr - A Students Introduction to Thin-Film Growth and Characterization
Longiaru M, Krastev ET, Tobin RG |
| 2879 - 2892 |
LPCVD Silicon-Rich Silicon-Nitride Films for Applications in Micromechanics, Studied with Statistical Experimental-Design
Gardeniers JG, Tilmans HA, Visser CC |
| 2893 - 2896 |
Epitaxial-Growth of Tise2 Thin-Films on Se-Terminated GaAs(111)B
Nishikawa H, Shimada T, Koma A |
| 2897 - 2900 |
Infrared Redistribution of D-2 and HD Layers for Inertial Confinement Fusion
Collins GW, Bittner DN, Monsler E, Letts S, Mapoles ER, Bernat TP |
| 2901 - 2904 |
On the Recovery of the Spectroscopic Image in Atomic-Force Microscopy
Sokolov IY |
| 2905 - 2908 |
Effect of Al Ion-Implantation on the Adhesion of Al Films to SiO2 Substrates
Su XW, Yang J, Zhang QY, Cui FZ |
| 2909 - 2915 |
Silicon(001) Surface After Annealing in Hydrogen Ambient
Aoyama T, Goto K, Yamazaki T, Ito T |
| 2916 - 2929 |
Adsorption-Isotherms of H-2 and Mixtures of H-2, CH4, Co, and CO2 on Copper Plated Stainless-Steel at 4.2 K
Wallen E |
| 2930 - 2934 |
Blackening of Argon/Mercury Cold-Cathode Discharge Lamps
Thielen M, Wassermann EF |
| 2935 - 2939 |
Comparison of Tribological Properties of Carbon and Carbon Nitride Protective Coatings over Magnetic Media
Khurshudov A, Kato K, Daisuke S |
| 2940 - 2945 |
Theory of the Spinning Rotor Gauge in the Slip Regime
Loyalka SK |
| 2946 - 2952 |
The Spinning Rotor Gauge - Measurements of Viscosity, Velocity Slip Coefficients, and Tangential Momentum Accommodation Coefficients
Tekasakul P, Bentz JA, Tompson RV, Loyalka SK |
| 2953 - 2957 |
Influence of Envelope Geometry on the Sensitivity of Nude Ionization Gauges
Filippelli AR |
| 2958 - 2962 |
Impurity Back-Diffusion Through an Ultrahigh-Vacuum Turbomolecular Pump Under Large Gas Throughput
Konishi N, Shibata T, Ohmi T |
| 2963 - 2964 |
Filament Replacement for Nude Bayard-Alpert Ion Gauges
Cox ME, Panitz JA |
| 2965 - 2967 |
Extended Operation of a Wide-Range, All-Magnetic Bearing Turbomolecular Pump Without Backing
Thompson JR, Weber PM, Hellmer R |
| 2968 - 2969 |
Simple Procedure for the Control of the Transport of Reactants by Carrier Gas-Flow
Lakshmikumar ST |
| 2970 - 2972 |
Effect of Oxygen on Methyl Radical Concentrations in a CH4/H-2 Chemical-Vapor-Deposition Reactor Studied by Infrared Diode-Laser Spectroscopy
Fan WY, Ropcke J, Davies PB |
| 2973 - 2975 |
Etch-Stop Characteristics of Sc2O3 and Hfo2 Films for Multilayer Dielectric Grating Applications
Britten JA, Nguyen HT, Falabella SF, Shore BW, Perry MD, Raguin DH |
