Journal of Vacuum Science & Technology A

Journal of Vacuum Science & Technology A, Vol.17, No.5 Entire volume, number list

ISSN: 0734-2101 (Print)

In this Issue (114 articles)

2401 - 2420	The search for novel, superhard materials Veprek S
2421 - 2430	Consequences of mode structure on plasma properties in electron cyclotron resonance sources Kinder RL, Kushner MJ
2431 - 2437	Silicon etching in NF3/O-2 remote microwave plasmas Matsuo PJ, Kastenmeier BEE, Oehrlein GS, Langan JG
2438 - 2446	Mass spectrometric measurements on inductively coupled fluorocarbon plasmas: Positive ions, radicals and endpoint detection Li X, Schaepkens M, Oehrlein GS, Ellefson RE, Frees LC, Mueller N, Korner N
2447 - 2455	Mass spectrometric detection of reactive neutral species: Beam-to-background ratio Singh H, Coburn JW, Graves DB
2456 - 2462	Investigation of 4% carbon in hydrogen electron cyclotron resonance microwave plasmas using ethane as the source gas Webb SF, Gaddy GA, Blumenthal R
2463 - 2466	Differences in radical generation due to chemical bonding of gas molecules in a high-density fluorocarbon plasma: Effects of the C = C bond in fluorocarbon gases Samukawa S, Mukai T
2467 - 2469	Reactive ion etching of piezoelectric Pb(ZrxTi1-x)O-3 in a SF6 plasma Bale M, Palmer RE
2470 - 2474	Experimental investigation of the respective roles of oxygen atoms and electrons in the deposition of SiO2 in O-2/TEOS helicon plasmas Granier A, Vallee C, Goullet A, Aumaille K, Turban G
2475 - 2484	Pulsed and continuous wave plasma deposition of amorphous, hydrogenated silicon carbide from SiH4/CH4 plasmas McCurdy PR, Truitt JM, Fisher ER
2485 - 2491	Analytical modeling of silicon etch process in high density plasma Abdollahi-Alibeik S, McVittie JP, Saraswat KC, Sukharev V, Schoenborn P
2492 - 2502	Selective etching of SiO2 over polycrystalline silicon using CHF3 in an inductively coupled plasma reactor Rueger NR, Doemling MF, Schaepkens M, Beulens JJ, Standaert TEFM, Oehrlein GS
2503 - 2509	Reactive ion etching for mesa structuring in HgCdTe Smith EPG, Musca CA, Redfern DA, Dell JM, Faraone L
2510 - 2516	Two-dimensional CT images of two-frequency capacitively coupled plasma Kitajima T, Takeo Y, Makabe T
2517 - 2524	Mechanism of fluorine reduction in C4F8/Ar parallel-plate-type electron-cyclotron-resonance plasma by a Si top plate Hayashi H, Okigawa M, Morishita S, Sekine M
2525 - 2530	Characterization and enhanced properties of plasma immersion ion processed diamond-like carbon films He XM, Bardeau JF, Walter KC, Nastasi M
2531 - 2534	Investigations of different dry etching methods on LaAlO3 Dienelt J, Zimmer K, Bigl F, Hohne R
2535 - 2541	Optimization of hardness by the control of microwave power in TiN thin film deposited by electron cyclotron resonance assisted sputtering in a nitrogen plasma Carney C, Durham D
2542 - 2545	Low temperature polycrystalline silicon film formation with and without charged species in an electron cyclotron resonance SiH4/H-2 plasma-enhanced chemical vapor deposition Nozawa R, Murata K, Ito M, Hori M, Goto T
2546 - 2550	Very uniform and high aspect ratio anisotropy SiO2 etching process in magnetic neutral loop discharge plasma Chen W, Morikawa Y, Itoh M, Hayashi T, Sugita K, Shindo H, Uchida T
2551 - 2556	New radical control method for high-performance dielectric etching with nonperfluorocompound gas chemistries in ultrahigh-frequency plasma Samukawa S, Mukai T, Tsuda K
2557 - 2571	Mechanism of C4F8 dissociation in parallel-plate-type plasma Hayashi H, Morishita S, Tatsumi T, Hikosaka Y, Noda S, Nakagawa H, Kobayashi S, Inoue M, Hoshino T
2572 - 2580	Operating high-density plasma sources in a low-density range: Applications to metal etch processes Czuprynski P, Joubert O, Vallier L, Sadeghi N
2581 - 2585	Etching polyimide with a nonequilibrium atmospheric-pressure plasma jet Jeong JY, Babayan SE, Schutze A, Tu VJ, Park J, Henins I, Selwyn GS, Hicks RF
2586 - 2592	Fourier-transform infrared measurements of CHF3/O-2 discharges in an electron cyclotron resonance reactor Goeckner MJ, Goeckner NA
2593 - 2597	Characterizing metal-masked silica etch process in a CHF3/CF4 inductively coupled plasma Kim B, Kwon KH, Park SH
2598 - 2606	Microscopic modeling of InP etching in CH4-H-2 plasma Houlet L, Rhallabi A, Turban G
2607 - 2611	Hydrogenated amorphous carbon nitride films on Si(100) deposited by direct current saddle-field plasma-enhanced chemical vapor deposition Jang HK, Kim G, Lee YS, Whangbo SW, Whang CN, Yoo YZ, Kim HG
2612 - 2618	Silicon nitride films deposited at substrate temperatures < 100 degrees C in a permanent magnet electron cyclotron resonance plasma Doughty C, Knick DC, Bailey JB, Spencer JE
2619 - 2622	Stoichiometry dependency of the firing and sustain voltage properties of MgO thin films or alternating current plasma display panels Son CY, Cho JH, Park JW
2623 - 2628	Development and characterization of surface chemistries for microfabricated biosensors Metzger SW, Natesan M, Yanavich C, Schneider J, Lee GU
2629 - 2633	Oxynitridation of cubic silicon carbide (100) surfaces Amy F, Douillard L, Aristov VY, Soukiassian P
2634 - 2641	Novel reflectron time of flight analyzer for surface analysis using secondary ion mass spectroscopy and mass spectroscopy of recoiled ions Smentkowski VS, Krauss AR, Gruen DM, Holecek JC, Schultz JA
2642 - 2646	Thermal reaction of Pt film with < 110 > GaN epilayer Gasser SM, Kolawa E, Nicolet MA
2647 - 2654	Density-functional cluster study of K adsorption on GaAs(110) surface Panda M, Ray AK
2655 - 2662	Composition and structure of HCl-isopropanol treated and vacuum annealed GaAs(100) surfaces Tereshchenko OE, Chikichev SI, Terekhov AS
2663 - 2667	Analysis of P adsorption and desorption on the (001) InP surface using surface photoabsorption Lee TW, Hwang H, Moon Y, Yoon E, Kim YD
2668 - 2675	Cryogenic stabilization of high vapor pressure samples for surface analysis under ultrahigh vacuum conditions Bruckner JJ, Wozniak K, Hardcastle S, Sklyarov A, Seal S, Barr TL
2676 - 2684	Atomic flux measurement by diode-laser-based atomic absorption spectroscopy Wang WZ, Hammond RH, Fejer MM, Beasley MR
2685 - 2691	Interface morphology of CdS thin films grown on cadmium stannate and glass substrates studied by grazing incidence x-ray scattering Huang S, Soo YL, Bechmann M, Kao YH, Wu X, Coutts TJ, Dhere R, Moutinho HR
2692 - 2695	Low energy cathodoluminescence spectroscopy of etched 6H-SiC surfaces Young AP, Jones J, Brillson LJ
2696 - 2702	Sorption properties and temperature-dependent near-surface chemistry of the BaLi4 intermetallic compound Caloi RM, Manini P, Vandre S, Magnano E, Kovac J, Narducci E, Sancrotti M
2703 - 2708	Spatially resolved fluorine actinometry Shannon S, Holloway JP, Brake ML
2709 - 2712	Computer study of boron segregation at the Si(100)-2 x 1 and Si(111)-root 3 x root 3 surfaces Zavodinsky VG, Kuyanov IA, Chukurov EN
2713 - 2718	Carbon impurity characterization on a linear plasma device using visible emission spectroscopy Whyte DG, Seraydarian RP, Doerner RP
2719 - 2730	Oxygen-induced changes in electron-energy-loss spectra for Al, Be and Ni Madden HH, Landers R, Kleiman GG, Zehner DM
2731 - 2736	Investigation of slider surfaces after wear using photoemission electron microscopy Anders S, Stammler T, Fong W, Bogy DB, Bhatia CS, Stohr J
2737 - 2740	Enhanced secondary electron yield from oxidized regions on amorphous carbon films studied by x-ray spectromicroscopy Diaz J, Anders S, Cossy-Favre A, Samant M, Stohr J
2741 - 2748	Thickness determination of metal thin films with spectroscopic ellipsometry for x-ray mirror and multilayer applications Liu C, Erdmann J, Maj J, Macrander A
2749 - 2752	Preferred orientation in carbon and boron nitride: Does a thermodynamic theory of elastic strain energy get it right? McCarty KF
2753 - 2758	Effects of moisture on Fowler-Nordheim characterization of thin silicon-oxide films Peterson CA, Workman RK, Sarid D, Vermeire B, Parks HG, Adderton D, Maivald P
2759 - 2770	Molecular dynamics simulations of Cl-2(+) impacts onto a chlorinated silicon surface: Energies and angles of the reflected Cl-2 and Cl fragments Helmer BA, Graves DB
2771 - 2778	X-ray photoelectron spectroscopy study of bombardment-induced compositional changes in ZrO2, SiO2, and ZrSiO4 Iacona F, Kelly R, Marletta G
2779 - 2784	Electronic structure, depth profile, and complex impedance spectroscopy of Pd doped ZnO ultrafine particle films Zhao DC, Qu ZK, Pan XR
2785 - 2790	Temperature programmed desorption from graphite Schleussner D, Rosler D, Becker J, Knapp W, Edelmann C, Garcia-Rosales C, Franzen P, Behrisch R
2791 - 2799	High resolution x-ray photoelectron spectroscopy and INDO/S-Cl study of the core electron shakeup states of pyromellitic dianhydride-4,4 '-oxydianiline polyimide Nakayama Y, Persson P, Lunell S, Kowalczyk SP, Wannberg B, Gelius U
2800 - 2804	Nickel-induced effect on the surface morphology of rapid-quenched Si(111) Fukuda T
2805 - 2810	Negative ion resputtering in Ta2Zn3O8 thin films Rack PD, Potter MD, Woodard A, Kurinec S
2811 - 2818	Effects of thermal annealing on the microstructure and mechanical properties of carbon-nitrogen films deposited by radio frequency-magnetron sputtering Lacerda MM, Freire FL, Prioli R, Lepinski CM, Mariotto G
2819 - 2825	Molecular dynamics simulation of Cu and Ar ion sputtering of Cu (111) surfaces Kress JD, Hanson DE, Voter AF, Liu CL, Liu XY, Coronell DG
2826 - 2829	High-rate deposition of biaxially textured yttria-stabilized zirconia by dual magnetron oblique sputtering Kaufman DY, DeLuca PM, Tsai T, Barnett SA
2830 - 2834	Deposition of copper by using self-sputtering Fu JM, Ding PJ, Dorleans F, Xu Z, Chen FS
2835 - 2840	Particle growth in a sputtering discharge Samsonov D, Goree J
2841 - 2849	Influence of the plasma pressure on the microstructure and on the optical and mechanical properties of amorphous carbon films deposited by direct current magnetron sputtering Jacobsohn LG, Freire FL
2850 - 2858	Establishing the relationship between process, structure, and properties of TiN films deposited by electron cyclotron resonance assisted reactive sputtering. I. Variations in hardness and roughness as a function of process parameters Carney C, Durham D
2859 - 2868	Establishing the relationship between process, structure, and properties on titanium nitride films deposited by electron cyclotron resonance assisted reactive sputtering. II. A process model Carney C, Durham D
2869 - 2878	Instabilities of the reactive sputtering process involving one metallic target and two reactive gases Martin N, Rousselot C
2879 - 2884	Influence of the sputtering variables in the ion bombardment during off-axis deposition of YBa2Cu3Ox films Acosta M, Ares O, Sosa V, Acosta C, Pena JL
2885 - 2890	High performance Al-N cermet solar coatings deposited by a cylindrical direct current magnetron sputter coater Zhang QC, Zhao K, Zhang BC, Wang LF, Shen ZL, Lu DQ, Xie DL, Li BF
2891 - 2895	Microstructure modification of silver films deposited by ionized magnetron sputter deposition Chiu KF, Blamire MG, Barber ZH
2896 - 2905	Energy transfer into the growing film during sputter deposition: An investigation by calorimetric measurements and Monte Carlo simulations Drusedau TP, Bock T, John TM, Klabunde F, Eckstein W
2906 - 2910	Optical constants of crystalline WO3 deposited by magnetron sputtering DeVries MJ, Trimble C, Tiwald TE, Thompson DW, Woollam JA, Hale JS
2911 - 2914	Growth of Mg films on H-terminated Si (111) Saiki K, Nishita K, Ariga Y, Koma A
2915 - 2919	Synthesis of hard TiN coatings with suppressed columnar growth and reduced stress Lacerda MM, Chen YH, Zhou B, Guruz MU, Chung YW
2920 - 2927	Interdiffusion studies of single crystal TiN/NbN superlattice thin films Engstrom C, Birch J, Hultman L, Lavoie C, Cabral C, Jordan-Sweet JL, Carlsson JRA
2928 - 2932	Vacuum deposited biaxial thin films with all principal axes inclined to the substrate Hodgkinson I, Wu QH
2933 - 2938	Visible and infrared photochromic properties of amorphous WO3-x films Mo YG, Dillon RO, Snyder PG
2939 - 2943	Ferroelectric properties of Pb(Zr,Ti)O-3 thin films deposited on annealed IrO2 and Ir bottom electrodes Lee HS, Um WS, Hwang KT, Shin HG, Kim YB, Auh KH
2944 - 2949	Dual ion beam deposited boron-rich boron nitride films Chan KF, Ong CW, Choy CL, Kwok RWM
2950 - 2956	Processing and characterization of nanometer sized copper sulfide particles Seal S, Bracho L, Shukla S, Morgiel J
2957 - 2961	Ex situ growth of the c-axis preferred oriented SrBi2Ta2O9 thin films on Pt/Ti/SiO2/Si substrates Bae C, Lee JK, Lee SH, Jung HJ
2962 - 2968	Study of interdiffusion between thin Y-Ba-Cu-O films and MgO substrates by applying Rutherford backscattering spectrometry combined with scanning tunneling microscopy Fujino Y, Igarashi Y, Yamaura S, Suzuki N, Iimura K
2969 - 2974	Integration of fluorinated amorphous carbon as low-dielectric constant insulator: Effects of heating and deposition of tantalum nitride Chang JP, Krautter HW, Zhu W, Opila RL, Pai CS
2975 - 2981	Precise, scalable shadow mask patterning of vacuum-deposited organic light emitting devices Tian PF, Bulovic V, Burrows PE, Gu G, Forrest SR, Zhou TX
2982 - 2986	Butanethiol on Au{100}-(5x20) using a simple retractable doser Dixon-Warren SJ, Bondzie V, Burson N, Lucchesi L, Yu Y, Zhang L
2987 - 2990	Bi/Sb superlattices grown by molecular beam epitaxy Cho SL, Kim Y, DiVenere A, Wong GK, Ketterson JB, Hong JI
2991 - 3002	Surface morphology of homoepitaxially grown (111), (001), and (110) diamond studied by low energy electron diffraction and reflection high-energy electron diffraction Nishitani-Gamo M, Loh KP, Sakaguchi I, Takami T, Kusunoki I, Ando T
3003 - 3007	Effects of grid bias on ZnO/alpha-Al2O3(0001) heteroepitaxy Doh SJ, Park SI, Cho TS, Je JH
3008 - 3018	Self-limiting growth conditions on (001) InP by alternate triethylindium and tertiarybutylphosphine supply in ultrahigh vacuum Otsuka N, Nishizawa J, Kikuchi H, Oyama Y
3019 - 3028	Growth kinetics of GaN and effects of flux ratio on the properties of GaN films grown by plasma-assisted molecular beam epitaxy Myoung JM, Gluschenkov O, Kim K, Kim S
3029 - 3032	Residual stress in GaN films grown by metalorganic chemical vapor deposition Chen Y, Gulino DA, Higgins R
3033 - 3037	Metalorganic chemical vapor deposition of barium strontium titanate thin films with a more coordinatively saturated Ti precursor, Ti(dmae)(4)(dmae= dimethylaminoethoxide) Lee JH, Kim JY, Shim JY, Rhee SW
3038 - 3044	Improved GaN growth using a quasihot wall metal-organic chemical vapor epitaxy reactor Chung SR, Chen JC, Worchesky TL
3045 - 3050	Giant enhancement of magneto-optical response and increase in perpendicular magnetic anisotropy of ultrathin Co/Pt(111) films upon thermal annealing Lin MT, Kuo CC, Her HY, Wu YE, Tsay JS, Shern CS
3051 - 3056	Parametrization of Laframboise's results for spherical and cylindrical Langmuir probes Karamcheti A, Steinbruchel C
3057 - 3061	Versatile and economical specimen heater for ultrahigh vacuum applications Bryant KW, Bozack MJ
3062 - 3066	Rarefied gas flow through a long rectangular channel Sharipov F
3067 - 3073	Influence of an electrical field on the macroparticle size distribution in a vacuum arc Keidar M, Aharonov R, Beilis II
3074 - 3076	Mechanism of enhanced plasma transport of vacuum arc plasma through curved magnetic ducts Zhang T, Zeng ZM, Tian XB, Tang BY, Chu PK, Brown IG, Zhang HX
3077 - 3080	Graphite macroparticle filtering efficiency of three different magnetic filter designs used in the filtered cathodic vacuum arc deposition of tetrahedral amorphous carbon films Hakovirta M, Walter KC, Wood BP, Nastasi M
3081 - 3095	Recommended practices for measuring the performance and characteristics of closed-loop gaseous helium cryopumps Welch KM, Andeen B, de Rijke JE, Foster CA, Hablanian MH, Longsworth RC, Millikin WE, Sasaki YT, Tzemos C
3096 - 3102	Power dissipation in turbomolecular pumps at high pressure Cerruti R, Spagnol M, Helmer JC
3103 - 3107	Entrapment pump: Noble gas pump for use in combination with a getter pump Watanabe F, Kasai A
3108 - 3110	Electric degradation behavior of hot filament in diamond chemical vapor deposition Chen GC, Huang RF, Wen LS
3111 - 3114	Epitaxial growth of Zn2Y ferrite films by pulsed laser deposition Kim H, Horwitz JS, Pique A, Newman HS, Lubitz P, Miller MM, Knies DL, Chrisey DB
3115 - 3117	Chemical vapor deposition of barium strontium titanate films using a single mixture of metalorganic precursors Lee JH, Park M, Rhee SW
3118 - 3120	Measuring the magnetic field distribution of a magnetron sputtering target Santos EJP
3121 - 3122	Video-game controller joystick Kurtz RL, Subramanian K, Mankey GJ
3124 - 3124	Papers from the AVS-Ultra Clean Society Session - Preface Diebold AC
3125 - 3128	Influence of wafer's back-surface finish on dry-etching characteristics Muramatsu S, Ando K, Nanbu H, Miyamoto H, Kitano T
3129 - 3133	Silicon nitride film growth for advanced gate dielectric at low temperature employing high-density and low-energy ion bombardment Sekine K, Saito Y, Hirayama M, Ohmi T
3134 - 3138	Low-temperature large-grain poly-Si direct deposition by microwave plasma enhanced chemical vapor deposition using SiH4/Xe Shindo W, Sakai S, Tanaka H, Zhong CJ, Ohmi T
3139 - 3143	Clean aluminum oxide formation on surface of aluminum cylinder in an ultraclean gas-sampling system Ishihara Y, Itou N, Kimijima T, Hirano T
3144 - 3148	Gradational lead screw vacuum pump development Ando K, Akutsu I, Ohmi T