Journal of Vacuum Science & Technology A

Journal of Vacuum Science & Technology A, Vol.18, No.5 Entire volume, number list

ISSN: 0734-2101 (Print)

In this Issue (90 articles)

2045 - 2052	Plasma etch/deposition modeling: A new dynamically coupled multiscale code and comparison with experiment Bear MJ, Guillory JU
2053 - 2061	Analysis of chlorine-containing plasmas applied in III/V semiconductor processing Franz G, Kelp A, Messerer P
2062 - 2066	Effect of magnetic field configuration in the cathodic polymerization systems with two anode magnetrons Zhao JG, Yasuda HK
2067 - 2079	The role of feedgas chemistry, mask material, and processing parameters in profile evolution during plasma etching of Si(100) Lane JM, Bogart KHA, Klemens FP, Lee JTC
2080 - 2084	Etching of (Ba,Sr)TiO3 film by chlorine plasma Shibano T, Takenaga T, Nakamura K, Oomori T
2085 - 2089	Crystallization of amorphous-silicon films with seed layers of microcrystalline silicon by plasma heating Kim HY, Park CD, Kang YS, Jang KJ, Lee JY
2090 - 2097	Etching of Si through a thick condensed XeF2 layer Sebel PGM, Hermans LJF, Beijerinck HCW
2098 - 2101	Characteristics of ZnO : Cr thin films deposited by spray pyrolysis Maldonado A, Olvera MDL, Asomoza R, Tirado-Guerra S
2102 - 2107	Gas utilization in remote plasma cleaning and stripping applications Kastenmeier BEE, Oehrlein GS, Langan JG, Entley WR
2108 - 2115	Plasma injection with helicon sources Chen FF, Jiang XC, Evans JD
2116 - 2121	Powder formation in germane-silane plasmas van Swaaij RACMM, Girwar BS, Metselaar JW
2122 - 2129	Fluorocarbon polymer deposition kinetics in a low-pressure, high density, inductively coupled plasma reactor Sowa MJ, Littau ME, Pohray V, Cecchi JL
2130 - 2136	Sensitivity studies of silicon etching in chlorine/argon plasmas Kleditzsch S, Riedel U
2137 - 2142	Interactions between plasmas in ionized physical vapor deposition discharges Andrew Y, Lu Z, Snodgrass T, Teitzel G, Wendt AE
2143 - 2148	Investigation of Si-doped diamond-like carbon films synthesized by plasma immersion ion processing He XM, Walter KC, Nastasi M, Lee ST, Fung MK
2149 - 2152	Studies on the optimum condition for the formation of a neutral loop discharge plasma Sung YM, Uchino K, Muraoka K, Sakoda T
2153 - 2163	Film growth precursors in a remote SiH4 plasma used for high-rate deposition of hydrogenated amorphous silicon Kessels WMM, van de Sanden MCM, Schram DC
2164 - 2168	Effects of plasma excitation power, sample bias, and duty cycle on the structure and surface properties of amorphous carbon thin films fabricated on AIS1440 steel by plasma immersion ion implantation Zeng ZM, Tian XB, Kwok TK, Tang BY, Fung MK, Chu PK
2169 - 2174	Cl-2-based dry etching of GaN films under inductively coupled plasma conditions Im YH, Park JS, Hahn YB, Nahm KS, Lee YS, Cho BC, Lim KY, Lee HJ, Pearton SJ
2175 - 2184	Investigation of dilute SF6 discharges for application to SiC reactive ion etching Scofield JD, Ganguly BN, Bletzinger P
2185 - 2197	Hysteresis and mode transitions in a low-frequency inductively coupled plasma Xu S, Ostrikov KN, Luo W, Lee S
2198 - 2206	Particle transport in a parallel-plate semiconductor reactor: Chamber modification and design criterion for enhanced process cleanliness Nijhawan S, McMurry PH, Campbell SA
2207 - 2212	Electron temperature, density, and metastable-atom density of argon electron-cyclotron-resonance plasma discharged by 7.0, 8.0, and 9.4 GHz microwaves Kawai Y, Kano K, Suzuki T, Akatsuka H, Fujii Y
2213 - 2216	Diagnosis of positive ions from the near-cathode region in a high-voltage pulsed corona discharge N-2 plasma Tang SK, Wang WC, Liu JH, Yang XF, Wu Y
2217 - 2223	Abatement of C2F6 in rf and microwave plasma reactors Vitale SA, Sawin HH
2224 - 2229	Si etching rate calculation for low pressure high density plasma source using Cl-2 gas Lee YD, Chang HY, Chang CS
2230 - 2238	Structural and mechanical characterization of fluorinated amorphous-carbon films deposited by plasma decomposition of CF4-CH4 gas mixtures Jacobsohn LG, Franceschini DF, da Costa MEHM, Freire FL
2239 - 2243	Er deposition in the submonolayer range on weakly boron-doped Si(111) surface Palmino F, Pelletier S, Ehret E, Gautier B, Labrune JC
2244 - 2248	Iron oxide thin films prepared by ion beam induced chemical vapor deposition: Structural characterization by infrared spectroscopy Yubero F, Ocana M, Justo A, Contreras L, Gonzalez-Elipe AR
2249 - 2253	Nickel precipitation at nanocavities in separation by implantation of oxygen Zhang M, Zeng XC, Chu PK, Scholz R, Lin CL
2254 - 2261	How low-energy ions can enhance depositions on low-K dielectrics Abramowitz P, Kiene M, Ho PS
2262 - 2266	Effect of a thin Ni layer on hydrogenation and thermal release characteristics of Ti thin films Shi LQ, Zhou ZY, Zhao GQ
2267 - 2270	Damage in diamond produced by analysis beam Ma ZQ, Liu BX, Naramoto H
2271 - 2276	Damage of InP (110) induced by low energy Ar+ and He+ bombardment Zhao Q, Deng ZW, Kwok RWM, Lau WM
2277 - 2287	Effects of increasing nitrogen concentration on the structure of carbon nitride films deposited by ion beam assisted deposition Hammer P, Victoria NM, Alvarez F
2288 - 2294	Vacuum beam studies of photoresist etching kinetics Greer F, Coburn JW, Graves DB
2295 - 2301	ZnO : Zn phosphor thin films prepared by ion beam sputtering Li W, Mao DS, Zhang FM, Wang X, Liu XH, Zou SC, Zhu YK, Li Q, Xu JF
2302 - 2311	Characterization studies of diamond-like carbon films grown using a saddle-field fast-atom-beam source Sarangi D, Panwar OS, Kumar S, Bhattacharyya R
2312 - 2318	Ti, TiN, and Ti/TiN thin films prepared by ion beam assisted deposition as diffusion barriers between Cu and Si Mu HC, Yu YH, Luo EZ, Sundaravel B, Wong SP, Wilson IH
2319 - 2326	Interaction of alcohols with a-CHx films Shukla N, Gellman AJ
2327 - 2332	Fabrication of ZnO-doped Zr0.8Sn0.2TiO4 thin films by radio frequency magnetron sputtering Huang CL, Hsu CS
2333 - 2338	Low-temperature magnetron sputter-deposition, hardness, and electrical resistivity of amorphous and crystalline alumina thin films Li Q, Yu YH, Bhatia CS, Marks LD, Lee SC, Chung YW
2339 - 2343	Epitaxial growth and physical properties of Permalloy film deposited on MgO(001) by biased dc plasma sputtering Ishino M, Yang JP, Makihara K, Shi J, Hashimoto M
2344 - 2348	Amorphous carbon films deposited by direct current-magnetron sputtering: Void distribution investigated by gas effusion and small angle x-ray scattering experiments Freire FL, Jacobsohn LG, Franceschini DF, Camargo SS
2349 - 2358	Growth, structure, and mechanical properties of CNxHy films deposited by dc magnetron sputtering in N-2/Ar/H-2 discharges Hellgren N, Johansson MP, Hjorvarsson B, Broitman E, Ostblom M, Liedberg B, Hultman L, Sundgren JE
2359 - 2362	Chemical structure change of thin films prepared from nonpolymeric organic compounds by pulsed laser deposition Kajitani T, Tanaka O, Tange Y, Matsuda H, Ooie T, Yano T, Yoneda M, Katsumura M, Suzaki Y
2363 - 2371	Laser-induced photodetachment in high-density low-pressure SF6 magnetoplasmas St-Onge L, Chaker M, Margot J
2372 - 2377	Evaporation and ion assisted deposition of HfO2 coatings: Some key points for high power laser applications Andre B, Poupinet L, Ravel G
2378 - 2383	Influence of oxygen background pressure on the structure and properties of epitaxial SrTiO3/La0.35Nd0.35Sr0.3MnO3 heterostructures grown by pulsed laser deposition Wu WB, Wong KH, Mak CL, Pang G, Choy CL, Zhang YH
2384 - 2388	The deposition behavior of SiO2-TiO2 thin film by metalorganic chemical vapor deposition methods Lee SM, Park JH, Hong KS, Cho WJ, Kim DL
2389 - 2393	Properties of nitrogen doped silicon films deposited by low-pressure chemical vapor deposition from silane and ammonia Temple-Boyer P, Jalabert L, Masarotto L, Alay JL, Morante JR
2394 - 2399	Comparison of titanium oxide films grown on bare glass and boiled glass in 50% H2SO4 by metal-organic chemical vapor deposition Jang HK, Whangbo SW, Chung YD, Kim TG, Kim HB, Lyo IW, Whang CN, Wang CH, Choi DJ, Kim TK, Lee HS
2400 - 2403	Chemical vapor deposition of Ru thin films by direct liquid injection of Ru(OD)(3) (OD=octanedionate) Lee JH, Kim JY, Rhee SW, Yang DY, Kim DH, Yang CH, Han YK, Hwang CJ
2404 - 2411	Variable angle spectroscopic ellipsometry of fluorocarbon films from hot filament chemical vapor deposition Lau KKS, Caulfield JA, Gleason KK
2412 - 2416	Effect of oxygen stoichiometry on the ferroelectric property of epitaxial all-oxide La0.7Sr0.3MnO3/Pb(Zr0.52Ti0.48)O-3/La0.7Sr0.3 thin-film capacitors Wu WB, Wong KH, Mak CL, Choy CL, Zhang YH
2417 - 2431	Preparation and characterization of clean, single-crystalline YHx films (0 <= x <= 2.9) on W(110) Hayoz J, Pillo T, Bovet M, Zuttel A, Guthrie S, Pastore G, Schlapbach L, Aebi P
2432 - 2436	Two-step deposition process of piezoelectric ZnO film and its application for film bulk acoustic resonators Park SH, Seo BC, Yoon G, Park HD
2437 - 2440	Epitaxial growth of La-Ca-Mn-O thin film on out-of-plane twinned LaAlO3 Song JH, Kim KK, Oh YJ, Jung HJ, Choi WK, Song JH, Choi DK
2441 - 2447	Reactivity of heteropolyanions toward GaAs compound Rothschild A, Quennoy A, Etcheberry A, Debiemme-Chouvy C
2448 - 2451	Growth and characterization of GaTlAs Antonell MJ, Gila B, Powers K, Abernathy CR
2452 - 2458	Optical spectroscopic analyses of OH incorporation into SiO2 films deposited from O-2/tetraethoxysilane plasmas Goullet A, Vallee C, Granier A, Turban G
2459 - 2465	Mass spectrometry study during the vapor deposition of poly-para-xylylene thin films Fortin JB, Lu TM
2466 - 2471	Semi-empirical modeling of the optical gap of amorphous hydrogenated nitrogenated carbon films Santo LLE, Durrant SF, Rangel EC, Galvao DS, de Moraes MAB
2472 - 2476	Red SrTiO3 : Pr,Al phosphor as potential field emission display material Yokoyama M, Yang SH
2477 - 2481	Atomic force microscopy investigation of nanometer-scale modifications of polymer morphology caused by ultraviolet irradiation Nowicki M, Kaczmarek H, Czajka R, Susla B
2482 - 2485	Spectra mapping of scanning tunneling microscope-induced light from electrochemically deposited Ag films on Au Nishitani R, Kasuya A, Szuba S
2486 - 2492	Growth of diamond films on Ti-6Al-4V substrates and determination of residual stresses using Raman spectroscopy Kumar A, Ahmed I, Vedawyas M
2493 - 2496	Luminous efficiency and secondary electron emission characteristics of alternating current plasma display panels with MgO-SrO-CaO protective layers Kim R, Kim Y, Cho JH, Park JW
2497 - 2502	Dynamical behavior of hydrogen molecule on GaAs(001) surface Ohashi M, Ozeki M, Cui J
2503 - 2506	Analysis of silicon-oxide-silicon nitride stacks by medium-energy ion scattering Ladheer D, Ma P, Lennard WN, Mitchell IV, McNorgan C
2507 - 2512	Three-dimensional simulation of film microstructure produced by glancing angle deposition Smy T, Vick D, Brett MJ, Dew SK, Wu AT, Sit JC, Harris KD
2513 - 2516	Potassium reaction on sulfur-passivated GaAs(100) Seo JM
2517 - 2521	The role of oxygen in the intrinsic tensile residual stress evolution in sputter-deposited thin metal films Misra A, Nastasi M
2522 - 2526	Interfacial silicon oxide formation during oxygen annealing of Ta2O5 thin films on Si: Oxygen isotope labeling Park HJ, Mao A, Kwong DL, White JM
2527 - 2532	Kinetic investigation of copper film oxidation by spectroscopic ellipsometry and reflectometry Hu YZ, Sharangpani R, Tay SP
2533 - 2541	Experimental and theoretical study of a differentially pumped absorption gas cell used as a low energy-pass filter in the vacuum ultraviolet photon energy range Mercier B, Compin M, Prevost C, Bellec G, Thissen R, Dutuit O, Nahon L
2542 - 2548	Alternative NH4F/HCl solution for ultraclean Si(001) surface Bok TH, Ye JH, Li SFY
2549 - 2562	Evacuation and outgassing of vacuum glazing Ng N, Collins RE
2563 - 2567	Effects of chemical etching with hydrochloric acid on a glass surface Jang HK, Chung YD, Whangbo SW, Lyo IW, Whang CN, Lee SJ, Lee S
2568 - 2577	Recommended practice for calibrating vacuum gauges of the thermal conductivity type Ellefson RE, Miiller AP
2578 - 2580	Molecular adsorption of GH(3)CN and C5H5N on si(111)7x7 Shirota N, Yagi S, Taniguchi M, Hashimoto E
2581 - 2585	Low cost, mechanically refrigerated diffusion pump baffle for ultrahigh vacuum chambers Chambreau S, Neuburger ML, Ho T, Funk B, Pullman D
2586 - 2590	Thickness effects in ultrathin film chemical vapor deposition polymers Senkevich JJ
2591 - 2594	Aligned silicon carbide nanocrystals at the SiO2/Si interface by C implantation into SiO2 matrices Chen CM, Liu XQ, Li ZF, Yu GQ, Zhu DZ, Hu J, Li MQ, Lu W
2595 - 2596	Sequential turret source-masking system for fabrication of multilayer structures Anthopoulos T, Shafai TS
2597 - 2597	Copper electroplating for future ultralarge scale integration interconnection (vol 18, pg 656, 2000) Gau WC, Chang TC, Lin YS, Hu JC, Chen LJ, Chang CY, Cheng CL
2598 - 2602	Fabrication of micro and submicro Y-Ba-Cu-O particles by excimer laser processing Luo GP, Chen CL, Chen SY, Shen J, Wang YS, Sun YY, Chu CW, Liou Y, Ming NB
2603 - 2605	Kinematic sample mounting system for accurate positioning of transferrable samples Lapicki A, Boyd KJ, Anderson SL
2606 - 2607	Electrochemical fluorine source for ultrahigh vacuum dosing Nakayama KS, Sakurai T, Weaver JH
2608 - 2612	Effects of oxygen gettering and target mode change in the formation process of reactively sputtered Pt oxide thin films Abe Y, Kawamura M, Sasaki K