Journal of Vacuum Science & Technology A

Journal of Vacuum Science & Technology A, Vol.19, No.5 Entire volume, number list

ISSN: 0734-2101 (Print)

In this Issue (104 articles)

2039 - 2042	Synthesis of BNx-SiNy composite films by multisource plasma chemical vapor deposition Nonogaki R, Yamada S, Ibukiyama M, Wada T
2043 - 2047	Effect of film density on electrical properties of indium tin oxide films deposited by dc magnetron reactive sputtering Choi SK, Lee JI
2048 - 2050	Dynamic mixing deposition of niobium nitride films by cathodic are plasma in ambient nitrogen Zhang T, Song JH, Tian XB, Chu PK, Brown IG
2051 - 2054	Low temperature work function variations of the Au/GaSb (110) interface: Experimental results and theoretical model Guasch C, Doukkali A, Bonnet J
2055 - 2060	Solid particle production in fluorocarbon plasmas. I. Correlation with polymer film deposition Takahashi K, Tachibana K
2061 - 2068	Vapor-phase oxidation during pulsed laser deposition of SrBi2Ta2O9 Christou C, Garg A, Barber ZH
2069 - 2073	Stabilization of zinc-blende cubic AlN in AlN/W superlattices Kim IW, Madan A, Guruz MW, Dravid VP, Barnett SA
2074 - 2082	Effects of wall contamination on consecutive plasma processes Yasuda HK, Yu QS, Reddy CM, Moffitt CE, Wieliczka DM
2083 - 2088	Changes in surface states during epitaxial growth of BaTiO3 on SrTiO3 substrate in connection with composition deviation Shimoyama K, Kubo K, Lida M, Yamabe K, Maeda T
2089 - 2096	Relationship of etch reaction and reactive species flux in C4F8/Ar/O-2 plasma for SiO2 selective etching over Si and Si3N4 Matsui M, Tatsumi T, Sekine M
2097 - 2101	Chromium doped ZnO thin films deposited by chemical spray: Chromium effect Olvera MD, Maldonado A, Matsumoto Y, Asomoza R, Melendez-Lira M, Acosta DR
2102 - 2108	Influence of substrate bias on the microstructure and internal stress in Cu films deposited by filtered cathodic vacuum arc Cheng YH, Tay BK, Lau SP, Shi X, Tan HS
2109 - 2115	Near-surface generation of negative ions in low-pressure discharges Stoffels E, Stoffels WW, Kroutilina VM, Wagner HE, Meichsner J
2116 - 2121	Electron emission from ion bombarded stainless-steel surfaces coated and noncoated with TiN and its relevance to the design of high intensity storage rings Hanson AL, Thieberger P, Steske DB, Zajic V, Zhang SY, Ludewig H
2122 - 2126	Electrical properties of silicon nitride films prepared by electron cyclotron resonance assisted sputter deposition Vargheese KD, Rao GM
2127 - 2133	In situ x-ray photoelectron spectroscopy for thin film synthesis monitoring Kelly MA, Shek ML, Pianetta P, Gur TM, Beasley MR
2134 - 2141	Spatial distributions of the absolute CF and CF2 radical densities in high-density plasma employing low global warming potential fluorocarbon gases and precursors for film formation Nakamura M, Hori M, Goto T, Ito M, Ishii N
2142 - 2148	Characteristics of zinc oxide deposited on copper metallized Si substrates Chang YS, Ting JM
2149 - 2154	Radio frequency siliconization: An approach to the coating for the future large superconducting fusion devices Li J, Zhao YP, Wan BN, Gong XZ, Zhen M, Gu XM, Zhang XD, Luo JR, Wan YX, Xie JK, Li CF, Chen JL, Toi K, Noda T, Watari T
2155 - 2162	Emission spectroscopic analysis of oxygen-plasma reaction on polymer surface: Effective polyacrylonitrile treatment by the plasma Kobayashi T, Sasama T, Wada H, Fujii N
2163 - 2167	dc cathodic polymerization of trimethylsilane in a closed reactor system Yu QS, Moffitt CE, Wieliczka DM, Yasuda H
2168 - 2173	Fluorinated amorphous carbon thin films: Analysis of the role of the plasma source frequency on the structural and optical properties Valentini L, Braca E, Kenny JM, Lozzi L, Santucci S
2174 - 2180	Improved Auger electron spectroscopy sputter depth profiling of W/WNx and WSix layers on Si substrates Goryachko A, Kruger D, Kurps R, Weidner G, Pomplun K
2181 - 2185	Effects of thermal annealing on the interface morphology of CdTe/CdS heterojunctions Huang S, Soo YL, Kao YH, Compaan AD
2186 - 2193	Preparation of transmission electron microscopy cross-section specimens using focused ion beam milling Langford RM, Petford-Long AK
2194 - 2196	What causes the broad modulation in the x-ray reflectivity curve? Xu M, Yang N, Yu WX, Xiong G, Liu CX, Chai CL, Luo GM, Mai ZH, Lai WY
2197 - 2206	Silicon etching yields in F-2, Cl-2, Br-2, and HBr high density plasmas Vitale SA, Chae H, Sawin HH
2207 - 2216	Interfacial reaction pathways and kinetics during annealing of 111-textured Al-TiN bilayers: A synchrotron x-ray diffraction and transmission electron microscopy study Chun JS, Desjardins P, Lavoie C, Petrov I, Cabral C, Greene JE
2217 - 2221	Adsorption of oxygen on ultrathin Cu/Pt(111) films Tsay JS, Mangen T, Linden RJ, Wandelt K
2222 - 2231	Interfacial chemistry of the Sr/SiOxNy/Si(100) nanostructure Kirsch PD, Ekerdt JG
2232 - 2234	Characteristics of reactive ion etching for zinc telluride using CH4 and H-2 gases Guo QX, Matsuse M, Tanaka T, Nishio M, Ogawa H, Chang Y, Wang J, Wang SL
2235 - 2243	Characterization of the arc ion-plated CrN coatings oxidized at elevated temperatures Hsieh WP, Wang WC, Wang CC, Shieu FS
2244 - 2251	Codoping of magnetron-sputter deposited ZnS : TbOF with Ag, Cu, and Ce for electroluminescent phosphors Kim JP, Davidson M, Moorehead D, Puga-Lambers M, Zhai Q, Holloway P
2252 - 2258	Structural and mechanical properties of TiC and Ti-Si-C films deposited by pulsed laser deposition Phani AR, Krzanowski JE, Nainaparampil JJ
2259 - 2266	Diffusion of TiN into aluminum films measured by soft x-ray spectroscopy and Rutherford backscattering spectroscopy Schuler TM, Ederer DL, Ruzycki N, Glass G, Hollerman WA, Moewes A, Kuhn M, Callcott TA
2267 - 2271	HfO2-SiO2 interface in PVD coatings Cosnier V, Olivier M, Theret G, Andre B
2272 - 2281	Oxide etch behavior in a high-density, low-pressure, inductively coupled C2F6 plasma: Etch rates, selectivity to photoresist, plasma parameters, and CFx radical densities Perry WL, Waters K, Barela M, Anderson HM
2282 - 2286	Growth of NiO films on various GaAs faces via electron bombardment evaporation Nishita K, Koma A, Saiki K
2287 - 2293	Affect on pumping-speed measurements due to variations of test dome design based on Monte Carlo analysis Nesterov SB, Vassiliev YK, Longsworth RC
2294 - 2300	Effect of substrate temperature and ion bombardment on the formation of cubic boron nitride films: A two-step deposition approach Ye J, Oechsner H, Westermeyr S
2301 - 2306	Hydrogen-induced surface blistering of sample chuck materials in hydrogen plasma immersion ion implantation Chu PK, Zeng XC
2307 - 2311	Temperature dependence of atomic scale morphology in Si homoepitaxy between 350 and 800 degrees C on Si (100) by molecular beam epitaxy Jernigan GG, Thompson PE
2312 - 2314	Deposited well-crystallized cubic boron nitride films by pulsed plasma enhanced chemical vapor deposition at room temperature Yan PX, Yu HY, Wu ZG, Xu JW, Wen XL
2315 - 2319	Defect characterization of silver-based low-emissivity multilayer coatings for energy-saving applications Martin-Palma RJ, Vazquez L, Martinez-Duart JM
2320 - 2327	Growth and structure of hyperthin SiO2 coatings on polymers Dennler G, Houdayer A, Segui Y, Wertheimer MR
2328 - 2334	Doping of amorphous and microcrystalline silicon films deposited at low substrate temperatures by hot-wire chemical vapor deposition Alpuim P, Chu V, Conde JP
2335 - 2343	Pressure and input power dependence of Ar/N2H2 inductively coupled plasma systems Jang S, Lee W
2344 - 2367	Modeling the plasma chemistry of C2F6 and CHF3 etching of silicon dioxide, with comparisons to etch rate and diagnostic data Ho P, Johannes JE, Buss RJ, Meeks E
2368 - 2372	Nonclassical impedance control of the high rate midfrequency reactive magnetron sputter process using harmonic analysis Malkomes N, Szyszka B
2373 - 2381	Molecular dynamics simulation of silicon and silicon dioxide etching by energetic halogen beams Ohta H, Hamaguchi S
2382 - 2387	Dependence of compositions and crystallization behaviors of dc-sputtered TiNi thin films on the deposition conditions Ting JM, Chen P
2388 - 2393	Angular dependence of the surface excitation probability for medium energy electrons backscattered from Al and Si surfaces Werner WSM, Smekal W, Stori H, Eisenmenger-Sittner C
2394 - 2399	Co,Ni-base alloy thin films deposited by reactive radiol frequency magnetron sputtering Scardi P, Dong YH, Tosi C
2400 - 2406	Etch characteristics of iridium in chlorine-containing and fluorine-containing gas plasmas Chung CW, Chung I
2407 - 2413	Dependence of energy gaps with the stoichiometric deviation in a CuIn0.5Ga0.5Se2 ingot: A schematic band model Diaz R
2414 - 2424	Growth of giant magnetoresistance multilayers: Effects of processing conditions during radio-frequency diode deposition Zou W, Wadley HNG, Zhou XW, Ghosal S, Kosut R, Brownell D
2425 - 2432	Ion bombardment energy and SiO2/Si fluorocarbon plasma etch selectivity Wang SB, Wendt AE
2433 - 2440	Large-area plasma produced by surface waves on a metal wall with periodic grooves Yamauchi T, Aoki K, Kanoh M, Sugai H
2441 - 2445	Sticking coefficient of boron and phosphorus on silicon during vapor-phase doping Kiyota Y, Inada T
2446 - 2452	Pressure dependent mode transition in an electron cyclotron resonance plasma discharge Aanesland A, Fredriksen A
2453 - 2455	Field-assisted metal-induced crystallization of amorphous silicon films Khakifirooz A, Mohajerzadeh S, Haji S
2456 - 2462	Electrical characteristics of nitrogen incorporated hydrogenated amorphous carbon Magill DP, Ogwu AA, McLaughlin JA, Maguire PD, McCullough RW, Voulot D, Gillen D
2463 - 2467	Enhanced luminance of ZnGa2O4 phosphor by In2O3 doping Yang SH, Yokoyama M
2468 - 2470	Rainbow scattering of CH4 and C2H6 molecular beams from a LiF(001) surface: Dependence on incident kinetic energy and molecular anisotropy Kondo T, Tomii T, Yagyu S, Yamamoto S
2471 - 2478	Electroless plating of copper on poly(tetrafluoroethylene) films modified by NH3 plasma and surface graft copolymerization with aniline Ma ZH, Tan KL, Alian AD, Kang ET, Neoh KG
2479 - 2482	Low temperature deposition of titanium-oxide films with high refractive indices by oxygen-radical beam assisted evaporation combined with ion beams Yamada Y, Uyama H, Murata T, Nozoye H
2483 - 2489	Characterization of silicon-rich nitride and oxynitride films for polysilicon gate patterning. I. Physical, characterization Joseph EA, Gross C, Liu HY, Laaksonen RT, Celii FG
2490 - 2493	ZnS : TbOF thin films sputter deposited from a single versus separate, ZnS and TbOF targets Kim JP, Davidson MR, Speck B, Moorehead DJ, Zhai Q, Holloway PH
2494 - 2498	Growth and structure of Ni films radio frequency sputter deposited on GaAs(001) covered with Ti film Makihara K, Yang JP, Shi J, Hashimoto M, Maruyama S, Barna A
2499 - 2503	Accommodation coefficient of tangential momentum on atomically clean and contaminated surfaces Sazhin OV, Borisov SF, Sharipov F
2504 - 2513	Corrosion behaviors of CrNx and (Ti1-xCrx)N coatings produced by ion plating Lee KH, Park C, Yoon Y, Lee JJ, Jehn HA
2514 - 2521	Characterization of sputtered indium tin oxide layers as transparent contact material Franz G, Lange B, Sotier S
2522 - 2532	Characterization of inductively coupled plasma etched surface of GaN using Cl-2/BCl3 chemistry Tripathy S, Ramam A, Chua SJ, Pan JS, Huan A
2533 - 2541	Charging of dust particles on surfaces Sternovsky Z, Horanyi M, Robertson S
2542 - 2548	Mechanical and etching properties of dual ion beam deposited hydrogen-free silicon nitride films Tsang MP, Ong CW, Chong N, Choy CL, Lim PL, Hung WW
2549 - 2553	Microstructures and electrochemical properties of Pt-doped amorphous V2O5 cathode films for thin film microbatteries Kim HK, Ok YW, Seong TY, Jeon EJ, Cho W, Yoon YS
2554 - 2566	Mechanism of the film composition formation during magnetron sputtering of WTi Shaginyan LR, Misina M, Kadlec S, Jastrabik L, Mackova A, Perina V
2567 - 2570	Perpendicular magnetic anisotropy in ultrathin yttrium iron garnet films prepared by pulsed laser deposition technique Popova E, Keller N, Gendron F, Thomas L, Brianso MC, Guyot M, Tessier M, Parkin SSP
2571 - 2577	Hydrogen outgasing from titanium-modified layers with various surface treatments Mizuno Y, Tanaka A, Takahiro K, Takano T, Yamauchi Y, Okada T, Yamaguchi S, Homma T
2578 - 2580	Composition profile of heat treated carbon nitride hard coatings Bohme O, Yang S, Teer DG, Albella JM, Roman E
2581 - 2585	Influence of electron flux on the oxidation of Ni3Al surfaces Palasantzas G, van Agterveld DTL, Koch SA, De Hosson JTM
2586 - 2589	Ultrahigh-rate plasma jet chemical etching of silicon Arnold T, Boehm G, Schindler A
2590 - 2595	Experimental and numerical analyses of electron temperature and density distributions in a magnetic neutral loop discharge plasma Okraku-Yirenkyi Y, Sung YM, Otsubo M, Honda C, Sakoda T
2596 - 2600	Phase boundary fluctuations on Si(l11) Hannon JB, Tromp RM
2601 - 2603	Transmission electron microscopy of threading dislocations in ZnO films grown on sapphire Lim SH, Washburn J, Liliental-Weber Z, Shindo D
2604 - 2611	Influence of elastic-electron scattering on measurements of silicon dioxide film thicknesses by x-ray photoelectron spectroscopy Powell CJ, Jablonski A
2612 - 2616	Novel interface modification technique applied from the top of a coated layer Yoshitake M, Aparna YR, Yoshihara K
2617 - 2621	Growth and characterization of epitaxial Ge1-xCx thin films on (100)Si Li W, Shah I, Guerin D, Chen JG, Hwu H
2622 - 2628	Dissociation reactions of hydrogen in remote plasma-enhanced chemical-vapor-deposition silicon nitride Boehme C, Lucovsky G
2629 - 2635	Adsorption and decomposition of (methylcyclopentadienyl) (1,5-cyclooctadiene) iridium on Rh Yan XM, Kim C, White JM
2636 - 2641	Formation mechanism of interfacial voids in the growth of Sic films on Si substrates Kim KC, Park CI, Roh JI, Nahm KS, Seo YH
2642 - 2651	X-ray photoelectron spectroscopic characterization of the adhesion behavior of chemical vapor deposited copper films Kim YS, Shimogaki Y
2652 - 2663	Trench filling by ionized metal physical vapor deposition Lu JQ, Kushner MJ
2664 - 2669	Structural and electroacoustic studies of AIN thin films during low temperature radio frequency sputter deposition Engelmark F, Iriarte GF, Katardjiev IV, Ottosson M, Muralt P, Berg S
2670 - 2675	SiO2 films deposited on silicon at low temperature by plasma-enhanced decomposition of hexamethyldisilazane: Defect characterization Croci S, Pecheur A, Autran JL, Vedda A, Caccavale F, Martini M, Spinolo G
2676 - 2679	Etching mechanism Of Y2O3 thin films in high density Cl-2/Ar plasma Kim YC, Kim CI
2680 - 2688	In situ x-ray photoelectron spectroscopy study of evaporated magnesium on chemically synthesized polypyrrole films Lim VWL, Kang ET, Neoh KG, Huang W
2689 - 2690	Summary of the American society for testing and materials practice E 2108-00 for calibration of the electron binding-energy scale of an x-ray photoelectron spectrometer Powell CJ
2691 - 2694	Growth of dense SiC films on Si at medium temperatures by pulsed laser deposition Craciun V, Lambers E, Bassim ND, Baney RH, Singh RK
2695 - 2697	Measurement of carbon film thickness by inelastic electron scatter Bryson CE, Vasilyev L, Linder R, White RL, Thiele JU, Coffey KR, Brannon JH
2698 - 2702	Resonant infrared pulsed-laser deposition of polymer films using a free-electron laser Bubb DM, Horwitz JS, Callahan JH, McGill RA, Houser EJ, Chrisey DB, Papantonakis MR, Haglund RF, Galicia MC, Vertes A
2703 - 2705	Simple vacuum heater and its application for annealing TiO2 films Liu C, Macrander A
2706 - 2708	Technique for production of calibrated metal hydride films Langley RA, Browning JF, Balsley SD, Banks JC, Doyle BL, Wampler WR, Beavis LG
2709 - 2709	Real-time feedback control of electron density in inductively coupled plasmas (vol 19, pg 750, 2001) Chang CH, Leou KC, Lin C