Journal of Vacuum Science & Technology A

Journal of Vacuum Science & Technology A, Vol.28, No.5 Entire volume, number list

ISSN: 0734-2101 (Print)

In this Issue (38 articles)

L9 - L13	On the frequency characteristic of inductor in the filter of Hall thrusters Wei LQ, Ning ZX, Peng E, Yu D
1033 - 1059	Interfacial organic layers: Tailored surface chemistry for nucleation and growth Hughes KJ, Engstrom JR
1060 - 1072	Comparison of the sputter rates of oxide films relative to the sputter rate of SiO2 Baer DR, Engelhard MH, Lea AS, Nachimuthu P, Droubay TC, Kim J, Lee B, Mathews C, Opila RL, Saraf LV, Stickle WF, Wallace RM, Wright BS
1073 - 1077	Control of surface roughness during high-speed chemical dry thinning of silicon wafer Heo W, Ahn JH, Lee NE
1078 - 1083	Negative real parts of the equivalent permittivity, permeability, and refractive index of sculptured-nanorod arrays of silver Jen YJ, Lakhtakia A, Yu CW, Wang YH
1084 - 1088	Effects of postdeposition annealing on physical and electrical properties of high-k Yb2TiO5 dielectrics Pan TM, Wu XC, Yen LC
1089 - 1091	Investigation of microstructure, surface morphology, and hardness properties of PtIr films by magnetron sputtering Lee CT, Liu BH, Chang CM, Lin YW
1092 - 1098	Nanostructured europium oxide thin films deposited by pulsed laser ablation of a metallic target in a He buffer atmosphere Luna H, Franceschini DF, Prioli R, Guimaraes RB, Sanchez CM, Canal GP, Barbosa MDL, Galvao RMO
1099 - 1104	Vacuum-calibration apparatus with pressure down to 10(-10) Pa Li DT, Guo MR, Cheng YJ, Feng Y, Zhang DX
1105 - 1110	MD simulations of GaN sputtering by Ar+ ions: Ion-induced damage and near-surface modification under continuous bombardment Despiau-Pujo E, Chabert P
1111 - 1114	Effective atomic layer deposition procedure for Al-dopant distribution in ZnO thin films Kim JY, Choi YJ, Park HH, Golledge S, Johnson DC
1115 - 1121	Induced changes on visible emission and conductive type in N-doped ZnO films by rapid thermal process Shan ZP, Gu SL, Wu KP, Zhu SM, Tang K, Zheng YD
1122 - 1125	Methods for measurement of electron emission yield under low energy electron-irradiation by collector method and Kelvin probe method Tondu T, Belhaj M, Inguimbert V
1126 - 1132	Microstructure and tribological performance of nanocomposite Ti-Si-C-N coatings deposited using hexamethyldisilazane precursor Wei RH, Rincon C, Langa E, Yang Q
1133 - 1140	Signal enhancement strategies for angular profile measurements of gas injected in ultrahigh vacuum Isnard L, Ares R
1141 - 1144	Cluster size dependence of Pt core-level shifts for mass-selected Pt clusters on TiO2(110) surfaces Isomura N, Wu XY, Hirata H, Watanabe Y
1145 - 1156	Relaxation of the electrical properties of vacuum-deposited a-Se1-xAsx photoconductive films: Charge-carrier lifetimes and drift mobilities Allen C, Belev G, Johanson R, Kasap S
1157 - 1160	Identification of B-K near edge x-ray absorption fine structure peaks of boron nitride thin films prepared by sputtering deposition Niibe M, Miyamoto K, Mitamura T, Mochiji K
1161 - 1168	Crystallization, metastable phases, and demixing in a hafnia-titania nanolaminate annealed at high temperature Cisneros-Morales MC, Aita CR
1169 - 1174	200-mm-diameter neutral beam source based on inductively coupled plasma etcher and silicon etching Kubota T, Nukaga O, Ueki S, Sugiyama M, Inamoto Y, Ohtake H, Samukawa S
1175 - 1180	Inverse Stranski-Krastanov growth in InGaAs/InP Sears L, Riposan A, Millunchick JM
1181 - 1186	F and Cl detection limits in secondary ion mass spectrometry measurements of Si and SiO2 samples Pivovarov AL, Guryanov GM
1187 - 1190	Epitaxial growth of germanium on silicon using a Gd2O3/Si (111) crystalline template Niu G, Largeau L, Saint-Girons G, Vilquin B, Cheng J, Mauguin O, Hollinger G
1191 - 1202	Vacuum breakdown limit and quantum efficiency obtained for various technical metals using dc and pulsed voltage sources Le Pimpec F, Gough C, Paraliev M, Ganter R, Hauri C, Ivkovic S
1203 - 1209	In situ study of nickel formation during decomposition of chemical vapor deposition Ni3N films Lindahl E, Ottosson M, Carlsson JO
1210 - 1214	Effect of process conditions on the microstructural formation of dc reactively sputter deposited AIN Ekpe SD, Jimenez FJ, Dew SK
1215 - 1225	Electron stimulated desorption from bare and nonevaporable getter coated stainless steels Malyshev OB, Smith AP, Valizadeh R, Hannah A
1226 - 1233	Deep GaN etching by inductively coupled plasma and induced surface defects Ladroue J, Meritan A, Boufnichel M, Lefaucheux P, Ranson P, Dussart R
1234 - 1239	Low temperature deposition of hydrogenated nanocrystalline SiC films by helicon wave plasma enhanced chemical vapor deposition Yu W, Lu WB, Teng XY, Ding WG, Han L, Fu GS
1240 - 1244	X-ray photoemission spectroscopy of Sr2FeMoO6 film stoichiometry and valence state Rutkowski M, Hauser AJ, Yang FY, Ricciardo R, Meyer T, Woodward PM, Holcombe A, Morris PA, Brillson LJ
1245 - 1249	Formation of nanoscale clusters during the initial stages of CaF2 growth on miscut Si(111) Kidd TE, Davis S, Klein D, Matveeva V, Sifeeva V, Becker NG
1250 - 1254	Controlling the work function of a diamond-like carbon surface by fluorination with XeF2 Tarditi A, Kondratyuk P, Wong PK, Gellman AJ
1255 - 1258	Preparation and topography analysis of randomly textured glass substrates Bunte E, Zhang WD, Hupkes J
1259 - 1262	Low-energy ion bombardment to tailor the interfacial and mechanical properties of polycrystalline 3C-silicon carbide Liu F, Li CH, Pisano AP, Carraro C, Maboudian R
1263 - 1268	Low energy Ar+ bombardment of GaN surfaces: A statistical study of ion reflection and sputtering Despiau-Pujo E, Chabert P
1269 - 1274	Dye-sensitized solar cells: Effect of Ar/O-2 gas-flow ratio on the structural and morphological properties of facing-target sputter-deposited TiO2 electrode Hossain MF, Takahashi T
1275 - 1278	Monolayer structure of a liquid crystalline perylene derivative on bare and on thiol-terminated Au(111) surfaces Wan AS, Kushto GP, Makinen AJ
1279 - 1280	Cosputtered composition-spread reproducibility established by high-throughput x-ray fluorescence Gregoire JM, Dale D, Kazimirov A, DiSalvo FJ, van Dover RB