Journal of Vacuum Science & Technology A

Journal of Vacuum Science & Technology A, Vol.17, No.6 Entire volume, number list

ISSN: 0734-2101 (Print)

In this Issue (60 articles)

3157 - 3165	Cathodic plasma polymerization and treatment by anode magnetron torch: II. The influence of operating parameters on the argon sputtering rate distribution Zhao JG, Yasuda H
3166 - 3171	Moisture stability and structure relaxation processes in plasma-deposited SiOF films Pankov V, Alonso JC, Ortiz A
3172 - 3178	Surface dependent electron and negative ion density in inductively coupled discharges Hebner GA, Blain MG, Hamilton TW, Nichols CA, Jarecki RL
3179 - 3184	Highly selective etching of silicon nitride over silicon and silicon dioxide Kastenmeier BEE, Matsuo PJ, Oehrlein GS
3185 - 3196	Monolayer-level controlled incorporation of nitrogen at Si-SiO2 interfaces using remote plasma processing Niimi H, Lucovsky G
3197 - 3201	Atomic hydrogen temperature in silane plasmas used for the deposition of a-Si : H films Miyazaki K, Kajiwara T, Uchino K, Muraoka K, Okada T, Maeda M
3202 - 3208	Properties of a-Si : H films deposited from silane diluted with hydrogen and helium using modified pulse plasma technique Mukherjee C, Anandan C, Seth T, Dixit PN, Bhattacharyya R
3209 - 3217	Absolute intensities of the vacuum ultraviolet spectra in a metal-etch plasma processing discharge Woodworth JR, Blain MG, Jarecki RL, Hamilton TW, Aragon BP
3218 - 3224	Influence of surface material on the boron chloride density in inductively coupled discharges Hebner GA, Blain MG, Hamilton TW
3225 - 3229	Production of highly uniform electron cyclotron resonance plasmas by distribution control of the microwave electric field Furuse M, Watanabe S, Tamura H, Fukumasa O
3230 - 3234	Deposition and 1.54 mu m Er3+ luminescent properties of erbium-doped hydrogenated amorphous silicon thin films by electron cyclotron resonance plasma enhanced chemical vapor deposition of SiH4 with concurrent sputtering of erbium Shin JH, Kim MJ
3235 - 3239	Effects of deposition conditions on the fluorine and hydrogen concentration in tantalum pentoxide (Ta2O5) thin films prepared by plasma enhanced chemical vapor deposition using a tantalum pentafluoride (TaF5) source Luo EZ, Sundaravel B, Guo HY, Wilson IH, Four S, Devine RAB
3240 - 3245	Effects of silicon-hydrogen bond characteristics on the crystallization of hydrogenated amorphous silicon films prepared by plasma enhanced chemical vapor deposition Kim HY, Choi JB, Lee JY
3246 - 3254	Low-energy xenon ion sputtering of ceramics investigated for stationary plasma thrusters Garnier Y, Viel V, Roussel JF, Bernard J
3255 - 3259	Dynamic mixing deposition/implantation in a plasma immersion configuration Tian XB, Zhang T, Zeng ZM, Tang BY, Chu PK
3260 - 3264	Silicon oxide selective etching process keeping harmony with environment by using radical injection technique Fujita K, Ito M, Hori M, Goto T
3265 - 3271	Plasma chemistry in fluorocarbon film deposition from pentafluoroethane/argon mixtures Agraharam S, Hess DW, Kohl PA, Allen SAB
3272 - 3280	Effect of capacitive coupling on inductively coupled fluorocarbon plasma processing Schaepkens M, Rueger NR, Beulens JJ, Li X, Standaert TEFM, Matsuo PJ, Oehrlein GS
3281 - 3292	Electrical control of the spatial uniformity of reactive species in plasmas Sobolewski MA, Steffens KL
3293 - 3307	Hardmask charging during Cl-2 plasma etching of silicon Vyvoda MA, Li M, Graves DB
3308 - 3311	Study of CN films synthesized by facing target sputtering Wang Y, Jiang EY, Bai HL, Wu P
3312 - 3316	Fine control of deposition film compositions using radio-frequency reactive sputtering with periodic gas additions Kimura S, Honda T, Fukushi D
3317 - 3321	Glow discharge mass spectrometry study of the deposition of TiO2 thin films by direct current reactive magnetron sputtering of a Ti target Vancoppenolle V, Jouan PY, Wautelet M, Dauchot JP, Hecq M
3322 - 3326	Pulsed bias magnetron sputtering of thin films on insulators Barnat E, Lu TM
3327 - 3332	Material characteristics and thermal stability of cosputtered Ta-Ru thin films Wuu DS, Chan CC, Horng RH
3333 - 3339	Hollow cathode magnetrons with target gas feed Bradley JW, Willett DM, Gonzalvo YA
3340 - 3350	Ion-enhanced etching of Si(100) with molecular chlorine: Reaction mechanisms and product yields Goodman RS, Materer N, Leone SR
3351 - 3357	Nanoscratch characterization of dual-ion-beam deposited C-doped boron nitride films Chan KF, Ong CW, Choy CL
3358 - 3361	Enhancement of the etch rate of LiNbO3 by prior bombardment with MeV O2+ ions Leech PW, Ridgway MC
3362 - 3367	X-ray photoelectron spectroscopy studies of modified surfaces of alpha-Al2O3, SiO2, and Si3N4 by low energy reactive ion beam irradiation Choi WK, Koh SK, Jung HJ
3368 - 3378	Reaction layer dynamics in ion-assisted Si/XeF2 etching: Ion flux dependence Sebel PGM, Hermans LJF, Beijerinck HCW
3379 - 3384	Mechanism of columnar microstructure growth in titanium oxide thin films deposited by ion-beam assisted deposition Tang Q, Kikuchi K, Ogura S, Macleod A
3385 - 3392	Laser-induced particle formation and coalescence in a methane discharge Stoffels WW, Stoffels E, Ceccone G, Rossi F
3393 - 3396	Growth of single crystal MgO on TiN/Si heterostructure by pulsed laser deposition Sharma AK, Kvit A, Narayan J
3397 - 3400	Properties of Y2O3 nanocluster films deposited by Cu-vapor laser at room temperature Dinh LN, Frischknecht KD, Schildbach MA, Anklam T, McLean W
3401 - 3405	INA-X: A novel instrument for electron-gas secondary neutral mass spectrometry with optional in situ x-ray photoelectron spectroscopy Oechsner H, Muller M
3406 - 3414	Preparation and mechanical properties of composite diamond-like carbon thin films Wei Q, Narayan RJ, Sharma AK, Sankar J, Narayan J
3415 - 3418	Metal overlayers on organic functional groups of self-assembled monolayers: VIII. X-ray photoelectron spectroscopy of the Ni/COOH interface Herdt GC, Czanderna AW
3419 - 3428	Fourier transform infrared spectroscopy of effluents from pulsed plasmas of 1,1,2,2-tetrafluoroethane, hexafluoropropylene oxide, and difluoromethane Labelle CB, Karecki SM, Reif R, Gleason KK
3429 - 3432	Interface analysis of naphthyl-substituted benzidine derivative and tris-8-(hydroxyquinoline) aluminum using ultraviolet and x-ray photoemission spectroscopy Forsythe EW, Choong VE, Le TQ, Gao YL
3433 - 3436	Optoelectronic properties of polycrystalline CdInTe films Iribarren A, Riech I, Hernandez MP, Castro-Rodriguez R, Pena JL, Zapata-Torres M
3437 - 3442	Low-energy cathodoluminescence spectroscopy of erbium-doped gallium nitride surfaces Levin TM, Young AP, Schafer J, Brillson LJ, MacKenzie JD, Abernathy CR
3443 - 3448	Low-energy Ar+ ion induced angularly resolved Al(100) and Al(110) sputtering measurements Smith PC, Ruzic DN
3449 - 3451	Ni-Cr passivation of very thin Ag films for low-emissivity multilayer coatings Martin-Palma RJ, Martinez-Duart JM
3452 - 3462	Problems of determining true equilibrium pressures of hydrogen getters over a wide range of getter temperature and hydrogen sorption Ghezzi F, De Angeli M
3463 - 3466	Oxygen doping effect on Ge-Sb-Te phase change optical disks Ebina A, Hirasaka M, Nakatani K
3467 - 3472	Separation of electron-stimulated-desorption neutrals from outgassing originating from the grid surface of emission-controlled gauges: Studies with a heated-grid gauge Watanabe F, Suemitsu M
3473 - 3476	Growth habit of rhombohedral Bi thin films on zinc-blende CdTe substrates with various orientations Kim Y, Cho S, DiVenere A, Wong GK, Ketterson JB
3477 - 3480	Surface reaction pathways of 1,1,1,5,5,5-hexafluoro-2,4-pentanedione on clean and pre-oxidized Ni(110) surfaces Nigg HL, Masel RI
3481 - 3485	In situ atomic force microscope observation of initial stages of corrosion at 18Cr-8Ni stainless steel Katsuki F, Matsuda M, Matsumoto M, Tomida T
3486 - 3494	Tau-Charm factory vacuum chamber design Antropov V, Perelstein E, Sazonov M, Garke B, Schindler N, Edelmann C
3495 - 3499	Excitation states of titanium and nitrogen gas in an electron beam evaporation sustained arc Xiao SQ, Tsuzuki K, Sugimura H, Takai O
3500 - 3504	Development of an all-metal vacuum bellows following twist motion Suetsugu Y, Shiraishi M, Mishiba T, Ohno Y
3505 - 3508	Innovation of the fore pump and roughing pump for high-gas-flow semiconductor processing Akutsu I, Ohmi T
3509 - 3515	Influence of vacuum environment on the aging of phosphors at low electron energies Seager CH, Tallant DR, Shea L, Zavadil KR, Gnade B, Holloway PH, Bang JS, Zhang XM, Vecht A, Gibbons CS, Trwoga P, Summers C, Wagner B, Penczek J
3516 - 3520	Surface perturbation target for the Rayleigh-Taylor instability in inertial-confinement fusion experiments Zhou B, Wang J, Shen J, Deng ZS, Lai ZQ, Chen LY, Zhang YL
3521 - 3524	Role of boundary conditions at the anode in the development of an electric field induced avalanche in a gas at low pressure Pletnev V, Zukotynski S
3525 - 3528	High quality low roughness niobium thin films made by electron cyclotron resonance technique Esposito A, Nakagawa H, Akoh H, Takada S
3529 - 3529	Low-cost alternative to motorized linear and rotary motion feedthroughs McCabe PR, Utz AL
3530 - 3530	Temperature dependence of reflection high-energy electron diffraction intensity from Si(111)-7x7 superlattice (vol 15, pg 2569, 1997) Yamaguchi K, Mitsui H, Shigeta Y