Journal of Vacuum Science & Technology B

Journal of Vacuum Science & Technology B, Vol.12, No.1 Entire volume, number list

ISSN: 1071-1023 (Print)

In this Issue (85 articles)

1 - 7	Scanning-Tunneling-Microscopy Morphological-Study of the 1st Stages of Growth of Microwave Chemical-Vapor-Deposited Thin Diamond Films Vazquez L, Sanchez O, Albella JM
8 - 13	Fabrication of a Nanoscale, Inplane Gated Quantum-Wire by Low-Energy Ion Exposure Andrews CC, Spencer GF, Li F, Weichold MH, Kirk WP
13 - 13	Untitled Lucovsky G
14 - 19	Discretization of Curved Lines and Arbitrary Areas for Ion and Electron-Beam Writing on a Nonrectangular Grid Devries DK, Wieck AD, Ploog K
20 - 25	Fabrication of Aspheric High Numerical Aperture Reflective Diffractive Optic Elements Using Electron-Beam Lithography Mikolas D, Bojko R, Craighead HG, Haas F, Honey DA, Bare HF
26 - 31	Realization of Limited-Area Cathodes and Their Performance in an Electron-Optical Column Maloney CE, Nakamura H, Broers AN, Xia S, Peters L
32 - 36	Thin-Film Materials for the Preparation of Attenuating Phase-Shift Masks Shih KK, Dove DB
37 - 43	New Chemically Amplified Positive Resist for Electron-Beam Lithography Hashimoto K, Katsuyama A, Endo M, Sasago M
44 - 47	Ag2Te/As2S3, a Top-Surface, High-Contrast Negative-Tone Resist for Deep-Ultraviolet Submicron Lithography Dumford SA, Lavine JM
48 - 53	Polycrystalline Silicon Slit Nanowire for Possible Quantum Devices Wada Y, Kure T, Yoshimura T, Sudou Y, Kobayashi T, Gotou Y, Kondo S
54 - 58	Shallow Trench Isolation for Ultra-Large-Scale Integrated Devices Blumenstock K, Theisen J, Pan P, Dulak J, Ticknor A, Sandwick T
59 - 62	3-Dimensional Thermal-Analysis of High-Density Triple-Level Interconnection Structures in Very Large-Scale Integrated-Circuits Gui X, Dew SK, Brett MJ
63 - 68	Relationship Between Void Formation and Electromigration Performance in Al/TiW Multilayered Interconnections Fukada S, Kudo K, Suzuki M
69 - 72	Performance of the Plasma-Deposited Tungsten Nitride Barrier to Prevent the Interdiffusion of Al and Si Lee CW, Kim YT, Lee C, Lee JY, Min SK, Park YW
73 - 77	Mechanism of Ion-Beam-Induced Deposition of Gold Ro JS, Thompson CV, Melngailis J
78 - 87	Chemistry of Silicon Surfaces After Wet Chemical Preparation - A Thermodesorption Spectroscopy Study Pietsch GJ, Kohler U, Henzler M
88 - 95	Characterization of the Si/SiO2 Interface Morphology from Quantum Oscillations in Fowler-Nordheim Tunneling Currents Poler JC
96 - 101	Sidewall Passivation During the Etching of Poly-Si in an Electron-Cyclotron-Resonance Plasma of HBr Haverlag M, Oehrlein GS, Vender D
102 - 111	Evaluation and Control of Device Damage in High-Density Plasma-Etching Gadgil PK, Mantei TD, Mu XC
112 - 115	Advanced Electron-Cyclotron-Resonance Plasma-Etching Technology for Precise Ultra-Large-Scale Integration Patterning Samukawa S
116 - 124	On the Spatial-Resolution of 2-Dimensional Doping Profiles as Measured Using Secondary-Ion Mass-Spectrometry Tomography Liu X, Goodwinjohansson S, Jacobson JD, Ray MA, Mcguire GE
125 - 129	Roles of a Si Insertion Layer at GaAs/AlAs Heterointerface Determined by X-Ray Photoemission Spectroscopy Hashimoto Y, Tanaka G, Ikoma T
130 - 133	Plasma-Deposited SiO2 for Planar Self-Aligned Gate Metal-Insulator-Semiconductor Field-Effect Transistors on Semiinsulating InP Tabory CN, Young PG, Smith ED, Alterovitz SA
134 - 141	Room-Temperature Photoluminescence from Modulation-Doped AlGaAs/InGaAs/GaAs Quantum-Wells Svensson SP, Gill DM, Towner FJ, Uppal PN
142 - 146	Comparison of Surface Recombination Velocities in InGaP and AlGaAs Mesa Diodes Pearton SJ, Ren F, Hobson WS, Abernathy CR, Chakrabarti UK
147 - 153	Analysis of Stoichiometry and Oxide-Growth of HF Treated GaAs(100) by X-Ray Photoelectron-Spectroscopy and Time-of-Flight Secondary-Ion Mass-Spectrometry Storm W, Wolany D, Schroder F, Becker G, Burkhardt B, Wiedmann L
154 - 157	Influences of Delta-Doping Time and Spacer Thickness on the Mobility and 2-Dimensional Electron-Gas Concentration in Delta-Doped GaAs/InGaAs/GaAs Pseudomorphic Heterostructures Shieh HM, Hsu WC, Kao MJ, Wu CL
158 - 160	Fabrication and Performance of GaAs Metal-Semiconductor Field-Effect Transistors with Step-Graded Striped Focused Ion-Beam Doping in the Channel Regions Hussain T, Cleaver JR, Ahmed H
161 - 162	Photolithographic Patterning of Porous Silicon Couillard JG, Craighead HG
165 - 165	Papers from the 2nd International Workshop on the Measurement and Characterization of Ultra-Shallow Doping Profiles in Semiconductors - Preface Subrahmanyan R
166 - 171	Experimental-Observations and Modeling of Ultra-Shallow Bf2 and as Implants in Single-Crystal Silicon Tasch AF, Yang SH, Morris S, Lim D
172 - 178	Ultra-Shallow-Doped Film Requirements for Future Technologies Elkareh B
179 - 185	Atomic Layer Epitaxy Deposition Processes Bedair SM
186 - 198	Secondary-Ion Mass-Spectrometry Analysis of Ultrathin Impurity Layers in Semiconductors and Their Use in Quantification, Instrumental Assessment, and Fundamental Measurements Dowsett MG, Barlow RD, Allen PN
199 - 204	Angle of Incidence Effects of an Oxygen-Ion Beam on the Surface-Chemistry of GaAs Solomon JS, Grant JT
205 - 208	Nitrogen Redistribution in SiO2 Under Ion-Bombardment Banerjee I, Kuzminov D
209 - 213	Secondary-Ion Mass-Spectrometry Measurements of Shallow Boron Profiles in Cobalt, Silicon, and Cobalt Disilicide Mohadjeri B, Svensson BG
214 - 218	Ultra-Shallow Depth Profiling with Time-of-Flight Secondary-Ion Mass-Spectrometry Bennett J, Dagata JA
219 - 229	Solid Source Diffusion from Agglomerating Silicide Sources .1. Measurement and Modeling Tsai JY, Canovai C, Osburn CM, Wang QF, Rose J, Cowen A, Denker MS
230 - 233	Improvement of Depth Resolution in Secondary-Ion Mass-Spectrometry Depth Profiling of Silicided Poly Contacts Corcoran SF, Soza D, Kincaid N, Danielson D
234 - 242	Method for the Measurement of the Lateral Dose Distribution of Dopants at Implantation or Diffusion Mask Edges (Lateral SIMS) Voncriegern R, Jahnel F, Bianco M, Langegieseler R
243 - 246	Comparison Between Computer-Simulation and Direct Secondary-Ion Mass-Spectrometry Measurement of Lateral Dopant Distributions Cooke GA, Dowsett MG, Hill C, Pearson PJ, Walton AJ
247 - 253	2-Dimensional Doping Profiles from Experimentally Measured One-Dimensional Secondary-Ion Mass-Spectroscopy Data Goodwinjohansson S, Liu XF, Ray M
254 - 257	Effect of Matrix Stopping Power on Sputter Depth Profile Broadening Ronsheim PA, Tejwani M
258 - 262	Secondary-Ion Mass-Spectrometry Depth Profiling of Boron and Antimony Deltas in Silicon - Comparison of the Resolution Functions Using Oxygen Bombardment at Different Energies and Impact Angles Wittmaack K
263 - 268	Sputter-Initiated Resonance Ionization Spectroscopy - An Analytical Technique for Quantitative and Sensitive Measurements of Impurities and Ultra-Shallow Doping Profiles in Semiconductors Arlinghaus HF, Spaar MT, Tanigaki T, Mcmahon AW, Holloway PH
269 - 275	Limiting Factors for Secondary-Ion Mass-Spectrometry Profiling Cirlin EH, Vajo JJ, Hasenberg TC
276 - 282	2-Dimensional Spreading Resistance Profiling - Recent Understandings and Applications Vandervorst W, Privitera V, Raineri V, Clarysse T, Pawlik M
283 - 289	Improved Analysis of Spreading Resistance Measurements Dunham ST, Collins N, Jeng N
290 - 297	Automatic-Generation of Shallow Electrically Active Dopant Profiles from Spreading Resistance Measurements Clarysse T, Vandervorst W
298 - 303	On the Reduction of Carrier Spilling Effects During Resistance Measurements with the Spreading Impedance Probe Czech I, Clarysse T, Vandervorst W
304 - 311	Towards a Physical Understanding of Spreading Resistance Probe Technique Profiling Snauwaert J, Hellemans L, Czech I, Clarysse T, Vandervorst W, Pawlik M
312 - 316	From InP/GaInAsP Interface Study to Nanometer Range Heterostructure Detection with Probe Method Walachova J, Sroubek Z, Zelinka J, Kot M, Pittroff W
317 - 321	Profiling of Silicide Silicon Structures Using a Combination of the Spreading Resistance and Point-Contact Current-Voltage Methods Heddleson JM, Weinzierl SR, Hillard RJ, Raichoudhury P, Mazur RG
322 - 326	Detection of Anomalous Defect-Enhanced Diffusion Using Advanced Spreading Resistance Measurements and Analysis Weinzierl SR, Hillard RJ, Heddleson JM, Raichoudhury P, Mazur RG, Osburn CM
327 - 331	Doping Profiles Characterization in GaAs Semiinsulating Substrates Using Capacitance-Voltage, Conductance Voltage, and Current-Voltage Measurements Iniewski K, Liu M, Salama CA
332 - 335	Device Structure Characterization Using the Comparative Capacitance-Voltage Technique Taft RC, Noell MS
336 - 341	Accurate Profiling of Ultra-Shallow Implants with Mercury Gate Metal-Oxide-Semiconductor Capacitance-Voltage Ledudal R, Hillard RJ, Heddleson JM, Weinzierl SR, Raichoudhury P, Mazur RG
342 - 346	Accurate Determination of Shallow Doping Profiles and Interface States for Metal-Oxide-Semiconductor Structures from Measured Capacitance-Voltage Data Osse AL, Krusius JP, Weinzierl S
347 - 352	Characterization of Structure Dopant Behavior by Electron-Microscopy Maher DM, Zhang B
353 - 356	Transmission Electron-Microscopy Study of 2-Dimensional Semiconductor-Device Junction Delineation by Chemical Etching Liu JB, Dass ML, Gronsky R
357 - 361	Electron-Beam-Induced Current Determination of Shallow Junction Depth Fitzgerald EA, Gossmann HJ, Unterwald FC, Luftman HS, Monroe D
362 - 368	Cross-Sectional Scanning-Tunneling-Microscopy on Heterostructures - Atomic-Resolution, Composition Fluctuations and Doping Salemink HW, Johnson MB, Albrektsen O
369 - 372	Capacitance-Voltage Measurement and Modeling on a Nanometer-Scale by Scanning C-V Microscopy Huang Y, Williams CC
373 - 377	Junction Locations by Scanning-Tunneling-Microscopy - In-Air-Ambient Investigation of Passivated GaAs PN Junctions Tseng WF, Dagata JA, Silver RM, Fu J, Lowney JR
378 - 382	2-Dimensional Delineation of Semiconductor Doping by Scanning Resistance Microscopy Shafai C, Thomson DJ, Simardnormandin M
383 - 386	Electrical and Structural Characterization of Boron-Doped Si1-xGex Strained Layers Moriya N, Feldman LC, Luftman HS, King CA
387 - 390	Anomalous Low-Temperature Dopant Diffusion from in-Situ Doped Polycrystalline and Epitaxial Si Layers into the Monocrystalline Si Substrate Caymax M, Baert K, Poortmans J, Vandervorst W
391 - 394	Boltzmann-Matano Analysis Based Model for Boron-Diffusion from Polysilicon into Single-Crystal Silicon Sultan A, Bhattacharya S, Batra S, Banerjee S
395 - 398	Measurement of the Sheet Resistance of Doped Layers in Semiconductors by Microwave Reflection Bhimnathwala H, Borrego JM
399 - 404	Ultra-Shallow Box-Like Profiles Fabricated by Pulsed Ultraviolet-Laser Doping Process Ishida E, Sigmon TW, Weiner KH, Frost MR
407 - 407	Papers from the 2nd High-Density Plasma Workshop - Preface Forster J
408 - 415	Size-Scalable, 2.45-GHz Electron-Cyclotron-Resonance Plasma Source Using Permanent-Magnets and Wave-Guide Coupling Getty WD, Geddes JB
416 - 421	Optimization of an Electron-Cyclotron-Resonance Plasma Etch Process for N+ Polysilicon - HBr Process Chemistry Tipton GD, Blain MG, Westerfield PL, Trutna LS, Maxwell KL
422 - 426	High-Aspect-Ratio Polyimide Etching Using an Oxygen Plasma Generated by Electron-Cyclotron-Resonance Source Juan WH, Pang SW
427 - 432	Selective Dry-Etching in a High-Density Plasma for 0.5 Mu-M Complementary Metal-Oxide-Semiconductor Technology Givens J, Geissler S, Lee J, Cain O, Marks J, Keswick P, Cunningham C
433 - 440	Dielectric Thin-Film Deposition by Electron-Cyclotron-Resonance Plasma Chemical-Vapor-Deposition for Optoelectronics Dzioba S, Rousina R
441 - 448	Relationships Between the Material Properties of Silicon-Oxide Films Deposited by Electron-Cyclotron-Resonance Chemical-Vapor-Deposition and Their Use as an Indicator of the Dielectric-Constant Fowler B, Obrien E
449 - 453	Metal-Ion Deposition from Ionized Magnetron Sputtering Discharge Rossnagel SM, Hopwood J
454 - 460	Gate Oxide Damage in a High-Density Inductively-Coupled Plasma Gabriel CT, Melaku Y
461 - 477	2-Dimensional Modeling of High Plasma-Density Inductively-Coupled Sources for Materials Processing Ventzek PL, Hoekstra RJ, Kushner MJ
478 - 485	2-Dimensional Fluid Model of High-Density Inductively-Coupled Plasma Sources Stewart RA, Vitello P, Graves DB
486 - 493	Transport and Heating of Small Particles in High-Density Plasma Sources Kilgore MD, Daugherty JE, Porteous RK, Graves DB
494 - 506	Neutral Transport in High Plasma-Density Reactors Kilgore MD, Wu HM, Graves DB
507 - 511	Ponderomotive Transport of Charge in the Induction Plasma Helmer JC, Feinstein J