Journal of Vacuum Science & Technology B

Journal of Vacuum Science & Technology B, Vol.25, No.1 Entire volume, number list

ISSN: 1071-1023 (Print)

In this Issue (54 articles)

1 - 10	Characterization of the feature-size dependence in Ar/Cl-2 chemically assisted ion beam etching of InP-based photonic crystal devices Berrier A, Mulot M, Anand S, Talneau A, Ferrini R, Houdre R
11 - 16	Molecular beam epitaxial growth of indium antimonide and its characterization Pharn HT, Yoon SF, Boning D, Wicaksono S
17 - 20	Control of micro- and nanopatterns of octadecyltrimethoxysilane monolayers using nanoimprint lithography and atmospheric chemical vapor deposition Ressier L, Martin C, Viallet B, Grisolia J, Peyrade JP
21 - 28	Cryogenic etch process development for profile control of high aspect-ratio submicron silicon trenches Pruessner MW, Rabinovich WS, Stievater TH, Park D, Baldwin JW
29 - 32	Surface treatments of SiGe for scanning tunneling microscopy/spectroscopy and characterization of SiGe p-n junction Okui T, Tanaka Y, Shiraki Y
33 - 37	Low-stress silicon carbonitride for the machining of high-frequency nanomechanical resonators Fischer LM, Wilding N, Gel M, Evoy S
38 - 42	Fringe field theory and experiment for electrostatic chucking of extreme ultraviolet photomasks Raghunathan S, Govindaraju L, Ruan J, Hartley JG
43 - 46	Transport mechanisms and the effects of organic layer thickness on the performance of organic Schottky diodes Huang CY, Lin SY, Cheng SS, Chou ST, Yang CY, Ou TM, Wu MC, Chan IM, Chan YJ
47 - 53	Simple theoretic approach to estimate the effect of gravity and thermophoresis on the diffusional nanoparticle contamination under low pressure conditions Asbach C, Fissan H, Kim JH, Yook SJ, Pui DYH
54 - 57	Nanoscale optical imaging of pigment particles in paint with near-field scanning optical microscopy Clark B, Gurguis G, Hallen HD
58 - 68	Remarkably efficient acid generation in chemically amplified resist from quantum chemistry modeling Granovsky AA, Bochenkova AV, Suetin N, Fryer D, Singh V
69 - 73	Electrical, photoelectrical, and luminescent properties of doped p-type GaN superlattices Polyakov AY, Smirnov NB, Govorkov AV, Shcherbatchev KD, Bublik VT, Voronova MI, Dabiran AM, Osinsky AV, Pearton SJ
74 - 81	Modeling of the integrated magnetic focusing and gated field-emission device with single carbon nanotube Chen PY, Hsu KH, Cheng KW, Hung CT, Wu JS, Cheng TC, Yu JP
82 - 85	Analysis of interface trap states at Schottky diode by using equivalent circuit modeling Jun M, Jang M, Kim Y, Choi C, Kim T, Park B, Lee S
86 - 90	Interface chemical characterization of novel W/HfO2/GeON/Ge stacks Martinez E, Renault O, Clavelier L, Le Royer C, Hartmann JM, Loup V, Minoret S, Cosnier V, Campidelli Y, Zegenhagen J, Lee TL
91 - 95	Photon-beam lithography reaches 12.5 nm half-pitch resolution Solak HH, Ekinci Y, Kaser P, Park S
96 - 101	Optimization and integration of trimethylsilane-based organosilicate glass and organofluorinated silicate glass dielectric thin films for Cu damascene process Cheng YL, Wang YL, Hwang GJ, Lee WH, O'Neill ML, Tang A, Wu CL
L1 - L4	Metal contact formation by microdeposition of nondestructive particles from focused ion beam sputtering Shiue J, Kuo PC, Wang YL
L5 - L9	Negative resist behavior of neutral sodium atoms deposited on self-assembled monolayers Ju S, Mills AK, Hang QL, Elliott DS, Janes DB
102 - 105	Low temperature ZEP-520A development process for enhanced critical dimension realization in reactive ion etch etched polysilicon Wang H, Laws GM, Milicic S, Boland P, Handugan A, Pratt M, Eschrich T, Myhajlenko S, Allgair JA, Bunday B
106 - 108	Fabrication of high-resolution multiwall carbon nanotube field-emission cathodes at room temperature Peng YT, Hu YZ, Wang H
109 - 114	Modeling of field-assisted emission from a negative electron affinity cathode Mayer A, Chung MS, Kumar N, Weiss BL, Miskovsky NM, Cutler PH
115 - 119	Fabrication of nanodot array molds for photonanoimprint using anodic porous alumina Kurashima Y, Yokota Y, Miyamoto I, Itatani T
120 - 123	Simple model for dielectrophoretic alignment of gallium nitride nanowires Motayed A, He MQ, Davydov AV, Melngailis J, Mohammad SN
124 - 129	45 nm node back end of the line yield evaluation on ultrahigh density interconnect structures using electron beam direct write lithography Icard B, Pain L, Arnal V, Manakli S, Le-Denmat JC, Brun P, Vincent M, Soonkindt C, Minghetti B, Matsumiya T
130 - 139	Real-time sensing and metrology for atomic layer deposition processes and manufacturing Henn-Lecordier L, Lei W, Anderle M, Rubloff GW
140 - 146	Optical properties of a multibeam column with a single-electron source Kamimura O, Tanimoto S, Ohta H, Nakayama Y, Sakakibara M, Sohda Y, Muraki M, Gotoh S, Hosoda M, Someda Y, Tamamori K, Hirose F, Nagae K, Kato K, Okunuki M
147 - 151	Influence of oxygen diffusion on residual stress for tantalum thin films Cheng MH, Cheng TC, Huang WJ, Chang MN, Chung MK
152 - 155	Novel Samsung advanced resist for thermal flow process material for nano-processing Choi SJ
156 - 163	Study of plasma-induced damage of porous ultralow-k dielectric films during photoresist stripping Xu SL, Qin C, Diao L, Gilbert D, Hou L, Wiesnoski A, Busch E, McGowan R, White B, Weber F
164 - 168	Critical impact of mask electromagnetic effects on optical proximity corrections performance for 45 nm and beyond Azpiroz JT, Rosenbluth AE, Lai K, Fonseca C, Yang D
169 - 174	Effects of corona discharge ions on the synthesis of silver nanoparticles by a supersonic nozzle expansion method Jung JH, Park HH, Kim SS
175 - 182	Influence of base additives on the reaction-diffusion front of model chemically amplified photoresists Vogt BD, Kang SH, Prabhu VM, Rao A, Lin EK, Wu WL, Satija SK, Turnquest K
183 - 188	Influence of starting material on analog technology fabrication yield and device component performance Mahalingam P, Wu XJ, Knerr R, Patton Y, Khan I
189 - 193	Ballistic recovery in III-V nanowire transistors Gilbert MJ, Banerjee SK
194 - 198	Three dimension analysis of EXB mass separator Li WP, Han L, Gu WQ
199 - 201	Effects of surface treatments on hexagonal InN films grown on sapphire substrates Cao L, Xie ZL, Liu B, Xiu XQ, Zhang R, Zheng YD
202 - 207	Advance static random access memory soft fall analysis using nanoprobing and junction delineation transmission electron microscopy Chang WT, Hsieh TE, Zimmermann G, Wang L
208 - 212	Orogenic movement mechanism for the formation of symmetrical relief features in copper nitride thin films Ji AL, Du Y, Li CR, Wang YQ, Cao ZX
213 - 216	Ni/Au contacts on homoepitaxial p-ZnSe with surface oxygen plasma treatments Lin TK, Lam KT, Chang SJ, Chiou YZ, Chang SP
217 - 223	Leakage current and charge trapping behavior in TiO2/SiO2 high-kappa gate dielectric stack on 4H-SIC substrate Mahapatra R, Chakraborty AK, Poolamai N, Horsfall A, Chattopadhyay S, Wright NG, Coleman KS, Coleman PG, Burrows CP
224 - 228	Process dependence of the thermal conductivity of image reversal photoresist layers Hung MT, Ju YS
229 - 234	Vold-free low-temperature silicon direct-bonding technique using plasma activation Ma XB, Liu WL, Song ZT, Li W, Lin CL
235 - 241	Local line edge roughness in microphotonic devices: An electron-beam lithography study Ma YS, Cheng YC, Cerrina F, Barwicz T, Smith HI
242 - 246	Scanning tunneling spectroscopy of single-strand deoxyribonucleic acid for sequencing Yoshida Y, Nojima Y, Tanaka H, Kawai T
247 - 251	Multiple replication of three dimensional structures with undercuts Mollenbeck S, Bogdanski N, Wissen M, Scheer HC, Zajadacz J, Zimmer K
252 - 257	Vapor phase deposition of oligo(phenylene ethynylene) molecules for use in molecular electronic devices Gergel-Hackett N, Cabral MJ, Pernell TL, Harriott LR, Bean JC, Chen B, Lu M, Tour JM
258 - 263	Effect of surface roughness of the neutralization grid on the energy and flux of fast neutrals and residual ions extracted from a neutral beam source Ranjan A, Helmbrecht C, Donnelly VM, Economou DJ, Franz GF
264 - 270	High-Q micromachined three-dimensional integrated inductors for high-frequency applications Weon DH, Jeon JH, Mohammadi S
271 - 276	Damascene technique applied to surface acoustic wave devices Reitz D, Thomas J, Schmidt H, Menzel S, Wetzig K, Albert M, Bartha JW
277 - 285	Depth resolution studies in SiGe delta-doped multilayers using ultralow-energy Cs+ secondary ion mass spectrometry Chanbasha AR, Wee ATS
286 - 288	Self-aligned microtriode for plasma generation at atmospheric pressure Han SH, Kim YM
289 - 291	Mesa structures of GaAs fabricated by nanoparticle mask under gas-cluster ion-beam irradiation Yamada S, Nagano M, Houzumi S, Toyoda N, Yamada I
292 - 292	"Microfabrication of ultrahigh density wafer-level thin film compliant interconnects for through-silicon-via based chip stacks" (vol 24, pg 1780, 2006) Arunasalam P, Ackler HD, Sammakia BG