Journal of Vacuum Science & Technology B

Journal of Vacuum Science & Technology B, Vol.13, No.2 Entire volume, number list

ISSN: 1071-1023 (Print)

In this Issue (142 articles)

167 - 173	Depth Profiling of Dopants in Thin Gate Oxides in Complementary Metal-Oxide-Semiconductor Structures by Resonance Ionization Mass-Spectrometry Downey SW, Emerson AB, Georgiou GE, Bevk J, Kistler RC, Moriya N, Jacobson DC, Wise ML
174 - 182	16-Megabit Dynamic Random-Access Memory Trench Depth Characterization Using 2-Dimensional Diffraction Analysis Hatab ZR, Mcneil JR, Naqvi SS
183 - 191	Simulations of Trench-Filling Profiles Under Ionized Magnetron Sputter Metal-Deposition Hamaguchi S, Rossnagel SM
192 - 197	Investigation of Silicon Transport in the Neutral Background of a Plasma Activated Reactive Evaporation System Higgins B, Durandet A, Boswell R
198 - 202	Submicron Al Filled via Formation by High-Temperature Sputter-Deposition and via Electrical-Properties Nishimura H, Ogawa S, Yamada T
203 - 208	Directional Deposition of Cu into Semiconductor Trench Structures Using Ionized Magnetron Sputtering Cheng PF, Rossnagel SM, Ruzic DN
209 - 213	Grain-Growth in Copper-Films Exposed to Magnetically Enhanced Plasmas Naeem MD, Rossnagel SM, Rajan K
214 - 226	Quantitative Chemical Topography of Polycrystalline Si Anisotropically Etched in Cl-2/O-2 High-Density Plasmas Guinn KV, Cheng CC, Donnelly VM
227 - 234	Comparison of Damage and Si Oxidation-Kinetics Resulting from Electron-Cyclotron-Resonance and Distributed Electron-Cyclotron-Resonance Plasma Processing Hu YZ, Li M, Wang Y, Irene EA, Hugon MC, Varniere F, Jiang N, Froment M, Agius B
235 - 241	Comparison of Etching Processes of Silicon and Germanium in SF6-O-2 Radiofrequency Plasma Campo A, Cardinaud C, Turban G
242 - 246	Steady-State Damage Profiles Due to Reactive Ion Etching and Ion-Assisted Etching Davis RJ, Jha P
247 - 252	Dry Photochemical Selective Etching of InGaAs/InAlAs in HBr Gas-Using a 172-nm Excimer Lamp Habibi S, Totsuka M, Tanaka J, Kinoshita T, Matsumoto S, Iida S
253 - 257	In-Situ Monitoring of GaAs Etched with a Cl-2/Ar Discharge in an Electron-Cyclotron-Resonance Source Kahaian DJ, Thomas S, Pang SW
258 - 267	Real-Time in-Situ Monitoring of Surfaces During Glow-Discharge Processing - NH3 and H-2 Plasma Passivation of GaAs Aydil ES, Zhou ZH, Gottscho RA, Chabal YJ
268 - 272	Fabrication of All-Optical Quantum-Well Bistable Microresonators by Reactive Ion Etching Rivera T, Izrael A, Azoulay R, Kuszelewicz R, Bresse JF, Oudar JL, Ladan FR
273 - 275	Characteristics of Delta-Doped InGaAs/GaAs Pseudomorphic Double-Quantum-Well High-Electron-Mobility Transistors Hsu RT, Kao MJ, Wang JS, Hsu WC
276 - 280	Optimization of Interfaces in InGaAs/InP Heterostructures Grown by Gas-Source Molecular-Beam Epitaxy Mozume T, Kashima H, Hosomi K, Ouchi K, Sato H, Masuda H, Tanoue T, Ohbu I
281 - 286	GaAs Growth on (111)B Substrates by Molecular-Beam Epitaxy - A Study of the First Stages of Growth on Ultraviolet-Ozone Prepared Surfaces Garcia BJ, Fontaine C, Yague AM
287 - 289	Electron-Beam-Heated Solid Source for Carbon Doping in GaAs and AlGaAs Alloys Grown by Molecular-Beam Epitaxy Walker JF, Sorba L, Defranceschi S, Beltram F
290 - 292	Reliable Substrate-Temperature Measurements for High-Temperature AlGaAs Molecular-Beam Epitaxy Growth Strite S, Kamp M, Meier HP
293 - 296	Use of Ti in Ohmic Metal Contacts to P-GaAs Ren F, Abernathy CR, Pearton SJ, Lothian JR
297 - 304	Ambient Scanning-Tunneling-Microscopy and Atomic-Force Microscopy on GaAs (110) Treated with (NH4)(2)S-X and Ses2 Solutions Nozaki S, Tamura S, Takahashi K
305 - 307	Time-Resolved Luminescence Measurements on GaAs Homostructures Using Pulse Excitation of a Scanning Tunneling Microscope Stehle M, Bischoff M, Pagnia H, Horn J, Marx N, Weiss BL, Hartnagel HL
308 - 317	Characterization of a Single-Layer Quantum-Wire Structure Grown Directly on a Submicron Grating Gustafsson A, Samuelson L, Hessman D, Malm JO, Vermeire G, Demeester P
318 - 320	Postfabrication Resistance Trimming of a Superconducting Tunnel Junction Using a Focused Ion-Beam Barber ZH, Blamire MG, Dawes NJ
321 - 326	Nanometer Metrology by Means of Backscattered Electrons Difabrizio E, Grella L, Gentili M, Baciocchi M, Mastrogiacomo L, Maggiora R
327 - 330	Scanning-Tunneling-Microscopy Current-Voltage Characteristics of Carbon Nanotubes Rivera W, Perez JM, Ruoff RS, Lorents DC, Malhotra R, Lim S, Rho YG, Jacobs EG, Pinizzotto RF
331 - 334	Fabrication of an Ultrasharp and High-Aspect-Ratio Microprobe with a Silicon-on-Insulator Wafer for Scanning Force Microscopy Itoh J, Tohma Y, Kanemaru S, Shimizu K
335 - 337	Polycrystalline Tungsten and Iridium Probe Tip Preparation with a Ga+ Focused Ion-Beam Hopkins LC, Griffith JE, Harriott LR, Vasile MJ
338 - 343	Electron-Emission Enhancement by Overcoating Molybdenum Field-Emitter Arrays with Titanium, Zirconium, and Hafnium Schwoebel PR, Spindt CA, Brodie I
344 - 349	Effect of Tip Shape on Surface-Roughness Measurements from Atomic-Force Microscopy Images of Thin-Films Westra KL, Thomson DJ
350 - 354	Scanning Force Microscope Technique for Adhesion Distribution Measurement Sasaki M, Hane K, Okuma S, Torii A
355 - 360	Ultrasonic Atomization of the DNA Solution for Atomic-Force Microscopy Sasaki M, Okuma S, Miyata K, Hane K, Takeda Y
361 - 365	Gold Nanocomposites Maya L, Allen WR, Glover AL, Mabon JC
366 - 370	New Optics Design Methodology Using Diffraction Grating on Spherical Mirrors for Soft-X-Ray Projection Lithography Fukuda H, Terasawa T
371 - 374	Coarse Guidelines in Designing Focused Ion-Beam Optics Ishitani T, Kawanami Y
375 - 382	Synthesis of Focusing and Deflection Columns Szilagyi M, Mui PH
383 - 386	Electron Trapping in Thin Oxide on GaAs and InP at 77 K Eftekhari G
387 - 389	Ge Island Formation on Si(111) in Solid-Phase Epitaxy Studied by Medium-Energy Ion-Scattering Sumitomo K, Nishioka T, Ogino T
390 - 393	Comparison of the Electrical Characteristics of Si Metal-Insulator-Semiconductor Tunnel-Diodes with Interfacial Layer Grown by Rapid Thermal-Oxidation of Si in O-2 and in N2O Eftekhari G
394 - 395	Series Resistance of in-Plane-Gated Transistors and Quantum Point Contacts Devries DK, Wieck AD
396 - 398	Gate Oxide Degradation During Polysilicon Etching in a Parallel-Plate Plasma-Type Etcher Lee DD, Kim JH, Shin KS, Park HS, Choi SH
399 - 399	Coulomb Effects in Retarding-Field Lenses (Vol B12, Pg 3489, 1994) Brodie AD
402 - 402	Papers from the 7th International Vacuum Microelectronics Conference - 4-7 July 1994, Grenoble, France - Preface Baptist R, Meyer R
403 - 406	Calculations for an Experiment for Determining the Duration of Quantum Tunneling with a Laser-Illuminated Field Emitter Hagmann MJ
407 - 409	Interferometry with Low-Energy Electrons Morin R, Degiovanni A
410 - 413	Low-Energy-Electron Interference with Spindt-Type Microtips Py C, Baptist R
414 - 417	Silicon Tips with Diamond Particles on Them - New Field Emitters Givargizov EI
418 - 421	Field-Emission from Silicon Spikes with Diamond Coatings Zhirnov VV, Givargizov EI, Plekhanov PS
422 - 426	Field-Emission Characteristics of Diamond-Coated Silicon Field Emitters Liu J, Zhirnov VV, Myers AF, Wojak GJ, Choi WB, Hren JJ, Wolter SD, Mcclure MT, Stoner BR, Glass JT
427 - 430	Field-Emission from P-Type Polycrystalline Diamond Films Hong D, Aslam M
431 - 434	Field-Emission from Ion-Milled Diamond Films on Si Asano T, Oobuchi Y, Katsumata S
435 - 436	Field Emitter Arrays on Nanotube Carbon Structure Films Gulyaev YV, Chernozatonskii LA, Kosakovskaja ZJ, Sinitsyn NI, Torgashov GV, Zakharchenko YF
437 - 440	Studies of Porous Silicon Field Emitters Boswell E, Seong TY, Wilshaw PR
441 - 444	Enhancement in Emission Current from Dry-Processed N-Type Si Field Emitter Arrays After Tip Anodization Takai M, Yamashita M, Wille H, Yura S, Horibata S, Ototake M
445 - 447	Photoemission of Microrelief Semiconductor Surfaces with Semitransparent Au Films Dmitruk NL, Litovchenko VG, Mamikin SV
448 - 451	Effects of Potassium and Lithium Metal-Deposition on the Emission Characteristics of Spindt-Type Thin-Film Field-Emission Microcathode Arrays Talin AA, Felter TE, Devine DJ
452 - 455	Application of the Focused Ion-Beam Technique to the Direct Fabrication of Vertical-Type Field Emitters Ishikawa J, Ohtake T, Gotoh Y, Tsuji H, Fukayama N, Inoue K, Nagamachi S, Yamakage Y, Ueda M, Maruno H, Asari M
456 - 460	New Fabrication Method of Silicon Field Emitter Arrays Using Thermal-Oxidation Uh HS, Lee JD
461 - 464	Electron-Beaming Induced Deposition for Fabrication of Vacuum Field Emitter Devices Weber M, Rudolph M, Kretz J, Koops HW
465 - 468	Fabrication of Lateral-Type Thin-Film Edge Field Emitters by Focused Ion-Beam Technique Gotoh Y, Ohtake T, Fujita N, Inoue K, Tsuji H, Ishikawa J
469 - 473	Fabrication and Analysis of a Silicon Tip Avalanche Cathode Jo SH, Lee JD, Kwon SJ
474 - 477	Field-Emission from Microtip Test Arrays Using Resistor Stabilization Levine JD, Meyer R, Baptist R, Felter TE, Talin AA
478 - 481	Collimated Sputter-Deposition, a Novel Method for Large-Area Deposition of Spindt Type Field-Emission Tips Vanveen GN, Theunissen B, Vandeheuvel K, Horne R, Burgmans AL
482 - 486	Flat-Panel Display Prototype Using Low-Voltage Carbon Field Emitters Tcherepanov AY, Chakhovskoi AG, Sharov VB
487 - 490	Experimental-Study of Field-Emission Properties of the Spindt-Type Field Emitter Itoh S, Watanabe T, Ohtsu K, Taniguchi M, Uzawa S, Nishimura N
491 - 493	Active Control of the Emission Current of Field Emitter Arrays Yokoo K, Arai M, Mori M, Bae JS, Ono S
494 - 499	Emission Property and Current Fluctuation of Starlike Thin-Film Field Emitter Array with Self-Feedback Function Kaneko A, Sumita I, Kimura H, Matsuura J, Kondo Y
500 - 504	Blue-Light Emission Observed in a Monolithic Thin-Film Edge Emission Vacuum Microelectronic Device Williams RT, Evatt SR, Legg JD, Weichold MH
505 - 510	Simulation of Time-Dependent Quantum Transport in-Field Emission from Semiconductors - Complications Due to Scattering, Surface-Density, and Temperature Jensen KL
511 - 515	Analytic Expressions for Emission Characteristics as a Function of Experimental Parameters in Sharp Field Emitter Devices Jensen KL, Zaidman EG
516 - 521	Improved Fowler-Nordheim Equation for Field-Emission from Semiconductors Jensen KL
522 - 525	Calculation of Local-Density of States at an Atomically Sharp Si Tip Huang ZH, Cutler PH, Miskovsky NM, Sullivan TE
526 - 530	Calculation of Electron Field-Emission from Diamond Surfaces Huang ZH, Cutler PH, Miskovsky NM, Sullivan TE
531 - 535	Electric Field-Potential Correlation Factors for Field-Emission Microtriodes Nicolaescu D
536 - 539	Optimization of Quantum-Well Structures for Field-Emission Applications Litovchenko VG, Kryuchenko YV, Ilchenko LG
540 - 544	Numerical-Analysis on Field-Emission for the Effects of the Gate Insulators Ahn HY, Lee CG, Lee JD
545 - 548	Characterization of Field Emitter Structures by Means of Modeling Electron Trajectories in Vacuum Kopka P, Ermert H
549 - 552	Studies into the Emission Uniformity of Large Silicon Field Emitter Arrays Cade NA, Johnston R, Miller AJ, Patel C
553 - 557	Statistical-Analysis of Field Emitter Emissivity - Application to Flat Displays Levine JD
558 - 565	Field-Emission in a Microwave Field Fursey GN
566 - 570	External-Field Penetration Effect on Current-Field Characteristics of Metal Emitters Ilchenko LG, Kryuchenko YV
571 - 575	Planar Lenses for Field-Emitter Arrays Tang CM, Swyden TA, Ting AC
576 - 579	Silicon Field Emitter Arrays with Low Capacitance and Improved Transconductance for Microwave-Amplifier Applications Palmer D, Gray HF, Mancusi J, Temple D, Ball C, Shaw JL, Mcguire GE
580 - 584	Minicolumn Silicon Field-Emitter Arrays Yadon LN, Temple D, Palmer WD, Ball CA, Mcguire GE, Tang CM, Swyden TA
585 - 588	Processes of Microwave Generation and Amplification in Structures with Medium Electron Transit Angles Galdetskiy AV, Solntsev VA, Stepanchuk VV
589 - 592	Electron-Gun with Field-Emission Array Cathodes for Vacuum Microwave Devices Golenitsky II, Sazonov VP, Chubun NN, Rumyantsev SA
593 - 598	Distributed Microwave-Amplifier on Field Emitter Arrays with a Nonhomogeneous Energy Collector Gulyaev YV, Nefedov IS, Sinitsyn NI, Torgashov GV, Zakharchenko YF, Zhbanov AI
599 - 602	Development of a Scanning Atom-Probe Nishikawa O, Kimoto M, Iwatsuki M, Ishikawa Y
603 - 606	Field-Emission and Atom-Probe Field-Ion Microscope Studies of Palladium-Silicide-Coated Silicon Emitters King RA, Mackenzie RA, Smith GD, Cade NA
607 - 610	Reduced Field-Emission of Niobium and Copper Cathodes Mahner E, Muller G, Piel H, Pupeter N
611 - 615	Investigation of an Electron-Beam Microgun Using a Microtips Array Constancias C, Herve D, Accomo R, Molva E
616 - 620	Silicon Cathodes with Array of Tips Used as Pulsed Photoemitters Aboubacar A, Chbihi A, Dupont M, Gardes J, Laguna M, Querrou M
621 - 624	New-Type of Metal-Ion Source - Surface-Diffusion Li+ Ion-Source Medvedev VK, Suchorski Y, Block JH
625 - 629	Pilot Experiments on Microstructured Liquid-Metal Ion and Electron Sources Mitterauer J
637 - 637	Papers from the 14th North-American Conference on Molecular-Beam Epitaxy - Preface Fischer RJ
639 - 641	Nonuniform Distribution of Strain in InGaAs/GaAs Quantum Wires Chen YP, Reed JD, Schaff WJ, Eastman LF
642 - 645	Structural and Optical Behavior of Strained InAs Quantum Boxes Grown on Planar and Patterned GaAs (100) Substrates by Molecular-Beam Epitaxy Xie QH, Konkar A, Kalburge A, Ramachandran TR, Chen P, Cartland R, Madhukar A, Lin HT, Rich DH
646 - 649	Surfactant Assisted Growth of 850-nm Light Modulators Cunningham JE, Goossen KW, Jan W, Williams MD
650 - 652	Growth of GaxIn1-xAs Quantum-Wire Heterostructures by the Strain-Induced Lateral-Layer Ordering Process Chou ST, Hsieh KC, Cheng KY, Chou LJ
653 - 656	Low-Temperature Growth of 850-nm Quantum-Well Modulators for Monolithic Integration to Very Large-Scale Integrated Electronics on GaAs Cunningham JE, Goossen KW, Jan WY, Walker JA, Pathak RN
657 - 659	Modulated Reflectivity Spectroscopy of Electronic States Confined in Surface Quantum-Wells and Above Quantum Barriers Parks C, Ramdas AK, Melloch MR, Steblovsky G, Rammohan LR, Luo H
660 - 663	Interface Characterization in an InP/InGaAs Resonant-Tunneling Diode by Scanning-Tunneling-Microscopy Skala SL, Wu W, Tucker JR, Lyding JW, Seabaugh A, Beam EA, Jovanovic D
664 - 666	Selective-Area Epitaxy of Carbon-Doped (Al)GaAs by Chemical Beam Epitaxy Li NY, Dong HK, Hsin YM, Nakamura T, Asbeck PM, Tu CW
667 - 669	Carbon-Doped InAlAs/InGaAs Heterojunction Bipolar-Transistors in Solid-Source Molecular-Beam Epitaxy Using Carbon Tetrabromide Hwang WY, Miller DL
670 - 673	Surface-Morphology of Epitaxial CaF2/Si(111) and Its Influence on Subsequent GaAs Epitaxy Li WD, Thundat T, Anan T, Schowalter LJ
674 - 677	Far-Infrared Photoconductive Magnetospectroscopy as a Tool for Studying Shallow Donor Concentration Profiles in Wide GaAs/AlGaAs Quantum-Wells Chai YH, Goodhue WD, Mueller ER, Waldman J
678 - 680	Initial Results for InGaAs Films Grown on InGaAs Substrates Hoke WE, Lyman PS, Carter JR, Hendriks HT, Bonner WA, Lent B
681 - 684	Measurement of AlxGa1-xAs Temperature-Dependent Optical-Constants by Spectroscopic Ellipsometry Kuo CH, Anand S, Fathollahnejad H, Ramamurti R, Droopad R, Maracas GN
685 - 688	Consequences of DX Centers on the Charge-Distribution of Double-Quantum-Well, Delta-Modulation-Doped Heterostructures Young AP, Chen JH, Wieder HH
689 - 691	Effect of Substrate Miscut on the Structural-Properties of InGaAs Linear Graded Buffer Layers Grown by Molecular-Beam Epitaxy on GaAs Eldredge JW, Matney KM, Goorsky MS, Chui HC, Harris JS
692 - 695	In Segregation at the Growth Front of the GaAs/In0.30Ga0.70As (100) Heterojunction Williams MD, Chiu TH, Storz FG
696 - 698	Much Improved Interfaces in GaAs/AlAs Quantum-Wells Grown on (411)A GaAs Substrates by Molecular-Beam Epitaxy Shimomura S, Shinohara K, Kitada T, Hiyamizu S, Tsuda Y, Sano N, Adachi A, Okamoto Y
699 - 701	Growth of Inassb Quantum-Wells for Long-Wavelength (Similar-to-4 Mu-M) Lasers Turner GW, Choi HK, Le HQ
702 - 705	AlGaAsSb/Ingasb Quantum-Well Heterostructures for P-Channel Field-Effect Transistors Klem JF, Lovejoy ML
706 - 708	Molecular-Beam Epitaxy Growth and Characterization of High-Quality Gaassb Chen HC, Rane AB, Zhang DX, Murry SJ, Pei SS, Tao YK, Pearah PJ, Cheng KY
709 - 710	Alassb/Inassb Heterojunction Diodes Grown on Si by Molecular-Beam Epitaxy Du Q, Wang WI
711 - 715	High-Brightness II-VI Light-Emitting-Diodes Grown by Molecular-Beam Epitaxy on ZnSe Substrates Yu Z, Eason DB, Boney C, Ren J, Hughes WC, Rowland WH, Cook JW, Schetzina JF, Cantwell G, Harsch WC
716 - 719	Growth of ZnSe Epilayers on Fe(001) Films by Migration-Enhanced Epitaxy and Self-Limiting Epitaxy Abad H, Jonker BT, Cotell CM, Krebs JJ
720 - 723	Issues of II-VI Molecular-Beam Epitaxy Growth Toward a Long Lifetime Blue/Green Laser-Diode Grillo DC, Ringle MD, Hua GC, Han J, Gunshor RL, Hovinen M, Nurmikko AV
724 - 727	Growth of Vertical-Cavity on Buried-Oxide Substrate by Gas-Source Si Molecular-Beam Epitaxy and Coupled-Mode Luminescence of Strained Si1-xGex/Si Quantum-Wells Fukatsu S, Nayak DK, Shiraki Y
728 - 730	Effect of Si+ and Ge+ Ions on the Growth of Si1-xGex Films on Si(001) Using Potential-Enhanced Molecular-Beam Epitaxy Yun SJ, Lee SC, Lee JJ, Park SC
731 - 732	Znmgsse/Znsse/Cdznse Strained-Quantum-Well Lasers Grown on (511)A Tao IW, Wang Y, Jurkovic M, Wang WI
733 - 735	Solid Source Molecular-Beam Epitaxial-Growth of Ga0.5In0.5P Using a Valved, 3-Zone Phosphorus Source Hoke WE, Weir DG, Lemonias PJ, Hendriks HT, Jackson GS, Colombo P
736 - 738	Molecular-Beam Epitaxial-Growth of GaxIn1-Xp-GaAs (X-Similar-to-0.5) Double-Heterojunction Laser-Diodes Using Solid Phosphorus and Arsenic Valved Cracking Cells Baillargeon JN, Cho AY
739 - 741	Linear Motion Oven for Variable Incident Group-III Flux Jones CR, Beasley DL, Taylor EN, Evans KR, Solomon JS
742 - 745	In-Situ Pyrometric Interferometry Monitoring and Control of III-V Layered Structures During Molecular-Beam Epitaxy Growth Liu X, Ranalli E, Sato DL, Li Y, Lee HP
746 - 749	Molecular-Beam Epitaxy Growth of II-VI Light-Emitting Devices on GaAs Substrates Using Valved Sources for S and Se Johnson MA, Yu Z, Cook JW, Schetzina JF
750 - 753	Operation and Device Applications of a Valved-Phosphorus Cracker in Solid-Source Molecular-Beam Epitaxy Chin TP, Chang JC, Woodall JM, Chen WL, Haddad GI, Parks C, Ramdas AK
754 - 757	High-Resolution X-Ray-Diffraction Studies of AlGaP Grown by Gas-Source Molecular-Beam Epitaxy Bi WG, Deng F, Lau SS, Tu CW
758 - 761	Low-Resistivity Vertical-Cavity Surface-Emitting Lasers Grown by Molecular-Beam Epitaxy Using Sinusoidal-Composition Grading in Mirrors and in-Situ Nonalloyed Ohmic Contacts Hong M, Vakhshoori D, Mannaerts JP, Hsieh YF
762 - 764	Yellow (5735 Angstrom) Emission GaInP Multiple-Quantum-Well Lasers Grown by Gas-Source Molecular-Beam Epitaxy Chen AC, Moy AM, Cheng KY
765 - 767	Molecular-Beam Epitaxy Growth of Multiple-Wavelength Mirrors and Applications for a Dual-Wavelength Resonant-Cavity Photodetector Srinivasan A, Murtaza S, Anselm K, Shih YC, Campbell JC, Streetman BG
768 - 770	Novel GaAs Photodetector with Gain for Long-Wavelength Detection Harmon ES, Mcinturff DT, Melloch MR, Woodall JM
771 - 773	GaAs and InP Selective Molecular-Beam Epitaxy Streit DC, Block TR, Han AC, Wojtowicz M, Umemoto DK, Kobayashi K, Oki AK, Liu PH, Lai R, Ng GI
774 - 776	Graded-Channel InGaAs-InAlAs-InP High-Electron-Mobility Transistors Streit DC, Block TR, Wojtowicz M, Pascua D, Lai R, Ng GI, Liu PH, Tan KL
777 - 781	Nondestructive Characterization of Pseudomorphic High-Electron-Mobility Transistor Structures Using X-Ray-Diffraction and Reflectivity Rogers TJ, Ballingall JM, Larsen M, Hall EL
782 - 785	Molecular-Beam Epitaxial-Growth of High-Quality InSb for P-I-N Photodetectors Singh G, Michel E, Jelen C, Slivken S, Xu J, Bove P, Ferguson I, Razeghi M
786 - 788	Ultrathin Nitride Layers Grown by Molecular-Beam Epitaxy and Their Effects on Interface States in Silicon Metal-Insulator-Semiconductor Field-Effect Transistors Fayfield RT, Chen J, Hagedorn MS, Higman TK, Moy AM, Cheng KY
789 - 791	Approach to Obtain High-Quality GaN on Si and SiC-on-Silicon-on-Insulator Compliant Substrate by Molecular-Beam Epitaxy Yang Z, Guarin F, Tao IW, Wang WI, Iyer SS
792 - 795	Influence of Substrate Electrical Bias on the Growth of GaN in Plasma-Assisted Epitaxy Beresford R, Ohtani A, Stevens KS, Kinniburgh M
796 - 799	Growth and Characterization of GaN on Sapphire (0001) Using Plasma-Assisted Ionized Source Beam Epitaxy Kim K, Yoo MC, Shim KH, Verdeyen JT