Journal of Vacuum Science & Technology B

Journal of Vacuum Science & Technology B, Vol.17, No.2 Entire volume, number list

ISSN: 1071-1023 (Print)

In this Issue (126 articles)

259 - 264	Formation and shape of InAs nanoparticles on GaAs surfaces Bottomley DJ
265 - 268	Application of scanning tunneling microscopy to aluminum nanocluster deposition on silicon Hu XM, von Blanckenhagen P
269 - 272	Electrochemical microprocess by scanning ion-conductance microscopy Zhang HJ, Wu L, Huang F
273 - 279	Quantifying surface topography and scanning probe image reconstruction Kitching S, Williams PM, Roberts CJ, Davies MC, Tendler SJB
280 - 287	Analysis of a micromachine based vacuum pump on a chip actuated by the thermal transpiration effect Young RM
288 - 293	Atomic force microscope observation of plasmid deoxyribose nucleic acid with restriction enzyme Nakamura T, Maeda Y, Oka T, Tabata H, Futai M, Kawai T
294 - 296	Scanning tunneling microscopy tip shape imaging by "shadowing": Monitoring of in situ tip preparation Voigtlander B, Kastner M
297 - 302	Field emission microscopy study of cesium adsorbed on ZrB2, and TiB2 Hansen M, Hinrichs CH
303 - 305	Interaction of H2O with active Spindt-type molybdenum field emitter arrays Chalamala BR, Wallace RM, Gnade BE
306 - 310	Electron field emission from a silicon subsurface based on a generalized Airy function approach Khairurrijal, Miyazaki S, Hirose M
311 - 314	Electron field emission from a patterned diamondlike carbon flat cathode Mao DS, Zhao J, Li W, Ran CX, Wang X, Liu XH, Zhou JY, Fan Z, Zhu YK, Li Q, Xu JF
315 - 319	Single-mask silicon microtriode Garner DM, Amaratunga GAJ
320 - 322	Novel fabrication technique for 0.1 mu m T-shaped gate with i-line negative resist and poly(methylmethacrylate) Anda Y, Matsuno T, Tanabe M, Uda T, Yanagihara M, Nishii K, Inoue K, Hirose N, Matsui T
323 - 333	Enhanced pattern area density proximity effect correction Ea CS, Brown AD
334 - 344	Factors contributing to sidewall roughness in a positive-tone, chemically amplified resist exposed by x-ray lithography Reynolds GW, Taylor JW
345 - 349	Sub-100 nm KrF lithography for complementary metal-oxide-semiconductor circuits Fritze M, Astolfi D, Liu H, Chen CK, Suntharalingam V, Preble D, Wyatt PW
350 - 354	Effect of Coulomb interaction and pKa on acid diffusion in chemically amplified resists Shi XL
355 - 361	Study on characterizing fluorocarbon polymer films deposited on an inner surface during high-aspect-ratio contact hole etching using secondary ion mass spectroscopy Liu GL, Ikegami N, Uchida H, Hirashita N, Kanamori J
362 - 365	Focused ion beam micromilling of GaN and related substrate materials (sapphire, SiC, and Si) Steckl AJ, Chyr I
366 - 371	Reactive ion beam etching of GaAs and related compounds in an inductively coupled plasma of Cl-2-Ar mixture Hahn YB, Lee JW, Vawter GA, Shul RJ, Abernathy CR, Hays DC, Lambers ES, Pearton SJ
372 - 379	Effects of oxygen and fluorine on the dry etch characteristics of organic low-kappa dielectrics Baklanov MR, Vanhaelemeersch S, Bender H, Maex K
380 - 384	Diffusion of copper into polyimide deposited by ionized cluster beam Kim NY, Yoon HS, Kim SY, Whang CN, Kim KW, Cho SJ
385 - 391	Properties and thermal stability of chemically vapor deposited W-rich WSix thin films Wang MT, Lin YC, Chuang MS, Chun MC, Chen LJ, Chen MC
392 - 396	Formation of silicided shallow p(+) n junctions by BF2+ implantation into thin amorphous-Si or Ni/amorphous-Si films on Si substrates and subsequent Ni silicidation Juang MH, Hu MC, Yang CJ
397 - 404	High barrier iridium silicide Schottky contacts on Si fabricated by rapid thermal annealing Sanz-Maudes J, Jimenez-Luebe FJ, Clement M
405 - 409	Ionized titanium deposition into high aspect ratio vias and trenches Zhong G, Hopwood J
410 - 415	Investigating the process latitude of a low temperature metalorganic chemical vapor deposition TiNitride process Bulger JM, Whelan CS, Dumont A, Kuhn M, Clark J
416 - 422	Properties of titanium nitride film deposited by ionized metal plasma source Tanaka Y, Kim E, Forster J, Xu Z
423 - 431	Effect of in situ plasma oxidation of TiN diffusion barrier for AlSiCu/TiN/Ti metallization structure of integrated circuits Fortin V, Gujrathi SC, Gagnon G, Gauvin R, Currie JF, Ouellet L, Tremblay Y
432 - 442	Schottky enhancement of contacts to n-GaAs via the exchange mechanism using NiAlxGa1-x as a metallization Chen CP, Lin CF, Swenson D, Kao CR, Jan CH, Chang YA
443 - 447	Particulate contamination in tungsten low pressure chemical vapor deposition: An experimental study MacGibbon BS, Busnaina AA, Rasmussen DH
448 - 454	Designing test interconnect structures for micro-scale stress measurement: An analytical guidance Shen YL, Guo YL
455 - 459	Room-temperature radio frequency sputtered Ta2O5: A new etch mask for bulk silicon dissolved processes Chu AK, Huang YS, Tang SH
460 - 464	Properties of gate quality silicon dioxide films deposited on Si-Ge using remote plasma-enhanced chemical vapor deposition with no preoxidation Sharma R, Fretwell JL, Ngai T, Banerjee S
465 - 467	Metal-Ge-Si heterostructures for near-infrared light detection Colace L, Masini G, Galluzzi F, Assanto G, Capellini G, Di Gaspare L, Palange E, Evangelisti F
468 - 473	Micro-Raman study of free-standing porous silicon samples Trusso S, Vasi C, Allegrini M, Fuso F, Pennelli G
474 - 476	Reflection high-energy electron diffraction oscillations on rotating substrates Braun W, Moller H, Johnson SR, Zhang YH
477 - 485	Remote microwave plasma source for cleaning chemical vapor deposition chambers: Technology for reducing global warming gas emissions Raoux S, Tanaka T, Bhan M, Ponnekanti H, Seamons M, Deacon T, Xia LQ, Pham F, Silvetti D, Cheung D, Fairbairn K, Jonhson A, Pearce R, Langan J
486 - 488	Emission stability of a diamond-like carbon coated metal-tip field emitter array Jung JH, Ju BK, Lee YH, Jang J, Oh MH
489 - 493	Performance of electrophoretic deposited low voltage phosphors for full color field emission display devices Jin YW, Jang JE, Yi WK, Jung JE, Lee NS, Kim JM, Jeon DY, Hong JP
494 - 496	Controlled conjugation of nanoparticles with single stranded DNA Maeda Y, Nakamura T, Uchimura K, Matsumoto T, Tabata H, Kawai T
497 - 499	Effect of surface treatment by (NH4)(2)S-x solution on the reduction of ohmic contact resistivity of p-type GaN Kim JK, Lee JL, Lee JW, Park YJ, Kim T
500 - 502	Simple lithographic technique for chip repairing using a light microscope Carelli P, Castellano MG, Leoni R, Torrioli G
505 - 505	Papers from the 11th International Vacuum Microelectronics Conference - 19-23 July 1998 - Asheville, North Carolina -Preface Temple D
506 - 514	Transfer-matrix quantum-mechanical theory of electronic field emission from nanotips Mayer A, Vigneron JP
515 - 519	Semianalytical model of electron source potential barriers Jensen KL
520 - 525	Transport phenomena related to electron field emission from semiconductors through thick-oxide layers Filip V, Nicolaescu D, Okuyama F, Plavitu CN, Itoh J
526 - 533	Field emission: New theory for the derivation of emission area from a Fowler-Nordheim plot Forbes RG
534 - 541	Use of a spreadsheet for Fowler-Nordheim equation calculations Forbes RG
542 - 546	Modeling of field emission microtriodes with Si semiconductor emitters Nicolaescu D, Filip V, Itoh J, Okuyama F
547 - 551	Investigation of the formation mechanism of Spindt-type cathode by simulation and experiments Lee HW, Park YJ, Kim JW, Choi JH, Kim JM
552 - 556	Simulation of room temperature thermionic emission from AlxGa1-xN negative electron affinity cathodes Hatfield CW, Bilbro GL
557 - 561	Modeling of the electron field emission process in polycrystalline diamond and diamond-like carbon thin films Silva SRP, Amaratunga GAJ, Okano K
562 - 566	Theoretical study of thermal instability of Mo tips with and without diamond coatings Yu ZX, Wu SS, Xu NS
567 - 569	Novel field emitter array technology for subhalf-micron diameter gates Yoshiki M, Furutake N, Takemura H, Okamoto A, Miyano S
570 - 574	Fabrication and characteristics of an emitter-sharpened double-gate racetrack-shaped field emitter structure Wang BP, Tang YM, Wang C, Huang ZP, Sin JKO, Xue KX, Tong LS
575 - 579	High emission current double-gated field emitter arrays Hosono A, Kawabuchi S, Horibata S, Okuda S, Harada H, Takai M
580 - 582	Nonlithographic technique for the production of large area high density gridded field emission sources Holland ER, Harrison MT, Huang M, Wilshaw PR
583 - 587	Fabrication of gated nanosize Si-tip arrays for high perveance electron beam applications Choi SS, Lim SH, Kim DW, Jung MY, Jeon H
588 - 591	Low-voltage operation from the tower structure metal-oxide-semiconductor field-effect transistor Si field emitter Koga K, Kanemaru S, Matsukawa T, Itoh J
592 - 595	Comparative study of electron emission characteristics of silicon tip arrays with and without amorphous diamond coating She JC, Huq SE, Chen J, Deng SZ, Xu NS
596 - 600	Electron field emission from amorphous silicon Silva SRP, Forrest RD, Shannon JM, Sealy BJ
601 - 603	Emission stability of anodized silicon field emitter arrays Kim HR, Jessing JR, Parker DL
604 - 607	Emission characteristics of Spindt-type field emitter arrays in oxygen ambient Gotoh Y, Utsumi K, Nagao M, Tsuji H, Ishikawa J, Nakatani T, Sakashita T, Betsui K
608 - 612	Atom-by-atom analysis of microtip emitter surfaces by the scanning atom probe Nishikawa O, Watanabe M, Ohtani Y, Maeda K, Tanaka K, Sekine T, Itoh J
613 - 619	Transition metal carbide field emitters for field-emitter array devices and high current applications Mackie WA, Xie TB, Davis PR
620 - 622	On the atomic arrangement on the ZrO/W(100) cathode surface: Models for low-energy electron diffraction Nakane H, Kawata S, Oka M, Takami T, Mizuno S, Adachi H
623 - 626	Influence of the composition of a NbNx thin-film field emitter array on emission characteristics Nagao M, Gotoh Y, Ura T, Tsuji H, Ishikawa J
627 - 631	Effects of phase and thickness of cobalt silicide on field emission properties of silicon emitters Yoon YJ, Kim GB, Baik HK
632 - 634	Investigation of thickness effects on AlN coated metal tips by in situ I-V measurement Kang DH, Zhirnov VV, Wojak GJ, Preble EA, Choi WB, Hren JJ, Cuomo JJ
635 - 637	Investigation of field emission characteristics for Si-base materials: Titanium silicide, poly-Si, and single crystal Si Lim MS, Park CM, Han MK, Choi YI
638 - 641	Fabrication of tungsten-coated silicon-based gated emitters Chen L, El-Gomati MM
642 - 646	Planar field emitters fabricated by sulfur-doped boron nitride Yokota Y, Tagawa S, Sugino T
647 - 654	Novel nanoscale field emission structures: Fabrication technology, experimental, and calculated characteristics Tatarenko NI, Solntseva VA, Rodionov AN
655 - 658	Observation of the resonance tunneling in field emission structures Litovchenko VG, Evtukh AA, Litvin YM, Goncharuk NM, Chayka VE
659 - 665	Mechanisms of electron field emission from diamond, diamond-like carbon, and nanostructured carbon Robertson J
666 - 669	Characterization of field emission cathodes with different forms of diamond coatings Zhirnov VV, Kuttel OM, Groning O, Alimova AN, Detkov PY, Belobrov PI, Maillard-Schaller E, Schlapbach L
670 - 673	Integral and local field emission analyses of nanodiamond coatings for power applications Gohl A, Alimova AN, Habermann T, Mescheryakova AL, Nau D, Zhirnov VV, Muller G
674 - 678	Low-voltage electron emission from chemical vapor deposition graphite films Obraztsov AN, Pavlovsky IY, Volkov AP
679 - 683	Properties of plasma enhanced chemical vapor deposition diamond-like carbon films as field electron emitters prepared in different regimes Evtukh AA, Litovchenko VG, Klyui NI, Marchenko RI, Kudzinovski SY
684 - 687	Field emission characteristics of diamond films with different surface morphologies Ji H, Jin ZS, Wang JY, Lu XY, Gu CZ, Liu BB, Jin WC, Gao CX, Yuan G, Wang WB
688 - 689	Study of field emission of acid treated diamond films Yuan G, Jin Y, Jin C, Han L, Wang X, Chen H, Ji H, Gu C, Wang W, Zhao H, Jiang H, Zhou T, Tian Y
690 - 695	Study on improved electron emission characteristics of micropatterned diamond-like carbon films Shin IH, Lee TD
696 - 699	Local field emission features of thick diamond films on various silicon substrates Gohl A, Habermann T, Nau D, Muller G, Raiko V, Theirich D, Engemann J
700 - 704	Raman analysis and field emission study of ion beam etched diamond films Park M, McGregor DR, Bergman L, Nemanich RJ, Hren JJ, Cuomo JJ, Choi WB, Zhirnov VV
705 - 709	Studies of field emission from bias-grown diamond thin films Ding MQ, Gruen DM, Krauss AR, Auciello O, Corrigan TD, Chang RPH
710 - 714	Study of instability in the field electron emission from amorphous diamond films Chen J, Deng SZ, Zhen XG, Xu NS
715 - 718	Electrophoresis of nanodiamond powder for cold cathode fabrication Alimova AN, Chubun NN, Belobrov PI, Detkov PY, Zhirnov VV
719 - 722	Field emission from thin film diamond grown using a magnetically enhanced radio frequency plasma source Proffitt SS, Probert SJ, Whitfield MD, Foord JS, Jackman RB
723 - 727	Elucidation of field emission characteristics of phosphorous-doped diamond films Kuriyama K, Kimura C, Koizumi S, Kamo M, Sugino T
728 - 730	Effects of nitrogen addition on the structure and field emission properties of amorphous carbon Chi EJ, Shim JY, Baik HK
731 - 733	Enhancement of electron emission from silicon tips by nitrogen doped amorphous carbon coating Chi EJ, Shim JY, Baik HK, Lee HY, Lee SM, Lee SJ
734 - 739	Effect of nitrogen incorporation on electron emission from chemical vapor deposited diamond Park M, Sowers AT, Rinne CL, Schlesser R, Bergman L, Nemanich RJ, Sitar Z, Hren JJ, Cuomo JJ, Zhirnov VV, Choi WB
740 - 743	Subvolt turn-on voltage self-align gate diamond emitter fabricated by self-align-gate-sharpened molding technique Kang WP, Wisitsora-at A, Davidson JL, Howell M, Kerns DV, Li Q, Xu F
744 - 749	Five inch dull color field emission displays with narrow gap studies Kim JM, Lee HW, Choi YS, Jung JE, Lee NS, Jin YW, Park NS
750 - 757	Engineering phosphors for field emission displays Vecht A, Gibbons C, Davies D, Jing XP, Marsh P, Ireland T, Silver J, Newport A, Barber D
758 - 764	Advances in field emission displays phosphors Holloway PH, Trottier TA, Abrams B, Kondoleon C, Jones SL, Sebastian JS, Thomas WJ, Swart H
765 - 768	Highly efficient cathodoluminescent phosphors and screens for mid- and high-voltage field emission displays Goldburt ET, Bolchouchine VA, Levonovitch BN, Sochtine NP
769 - 772	High field characteristics of thin-film metal electrodes Ma XY, Muzykov PG, Sudarshan TS
773 - 777	Resistive arc protection for field-emitter-array cold cathodes used in X-band inductive output amplifiers Parameswaran L, Harris CT, Graves CA, Murphy RA, Hollis MA
778 - 780	Microwave amplification in structures with field and secondary emission Galdetskiy A
781 - 783	Distributed amplifier based on a field emitter array and a low-loss transmission line Galdetskiy A
784 - 787	New concept of lateral GaAs field emitter for sensor applications Arslan D, Dehe A, Hartnagel HL
788 - 791	Analysis of a field-emission magnetic sensor with compensated electron-beam deviation Marques MI, Serena PA, Nicolaescu D, Itoh J
798 - 798	Papers from the Fourth International Plasma-Based Ion Implantation Workshop - 2-4 June 1998 Dearborn, Michigan -Preface Mantese JV, Speck CE
799 - 807	Research and development in plasma-based ion implantation in Europe. I. Apparatus and projects Ensinger W
808 - 812	Plasma-based ion implantation facility and research at the National Accelerator Centre, Faure Prozesky VM, Meyer K, Alport M, Comrie C
813 - 817	Surface enhancement by shallow carbon implantation for improved adhesion of diamond-like coatings Malaczynski GW, Elmoursi AA, Leung CH, Hamdi AH, Campbell AB
818 - 821	Processing of diamondlike carbon using plasma immersion ion deposition Lee DH, Walter KC, Nastasi M
822 - 827	Optical properties of diamond-like carbon synthesized by plasma immersion ion processing He XM, Bardeau JF, Lee DH, Walter KC, Tuszewski M, Nastasi M
828 - 831	Investigation of ion implanted electroplated chromium from a trivalent bath Hamdi AH, Malaczynski GW, Elmoursi AA, Leung CH, Campbell AB, Shpuniarsky D, Simko SJ, Militello MC, Balogh MP, Lindsay JH
832 - 835	Nitrogen and boron implantation into austenitic stainless steel Mandl S, Gunzel R, Richter E, Moller W
836 - 839	Plasma immersion ion implantation for improvement of mechanical properties of AISI M2 steel Uglov VV, Khodasevich VV, Kuleshov AK, Fedotova JA, Rusalsky DP, Guenzel R, Richter E
840 - 844	Titanium nitride prepared by plasma-based titanium-ion implantation Yukimura K, Sano M, Maruyama T, Kurooka S, Suzuki Y, Chayahara A, Kinomura A, Horino Y
845 - 850	Effects of the Ti/Al atomic ratio on the properties of gradient (Ti,Al)N films synthesized by ion beam assisted deposition He XM, Shu L, Xie ZW
851 - 854	Process window and mechanism of surface property enhancement of 9Cr18 steel using plasma immersion ion implantation Zeng ZM, Tang BY, Chu PK, Tian XB, Wang SY, Wang XF
855 - 858	Nitriding stainless steels at moderate temperature: Time- and depth-resolved characterization of the near surface composition during the nitriding process Parascandola S, Kruse O, Richter E, Moeller W
859 - 862	Surface treatment of pure and alloyed aluminum using a new plasma-based ion implanter apparatus Popovici D, Terreault B, Bolduc M, Paynter RW, Ross GG, Sarkissian AH, Stansfield BL
863 - 866	High dose rate effects in silicon by plasma source ion implantation Chun M, Kim B, Conrad JR, Matyi RJ, Malik SM, Fetherston P, Han S
867 - 870	Ion implantation by vacuum arc plasmas Schuelke T, Witke T, Brueckner J
871 - 874	Pulsed metal ion source by triggerless shunting arc discharge Yukimura K, Isono R, Monguchi T, Yoshioka K, Masamune S
875 - 878	Simulation of dose uniformity for different pulse durations during inner surface plasma immersion ion implantation Liu AG, Wang XF, Wang SY, Tang BY, Chu PK, Zeng ZM, Tian XB
879 - 882	New line of high voltage high current pulse generators for plasma-based ion implantation Maulat O, Roche M, Le Coeur F, Lesaint O, Arnal Y, Pelletier J
883 - 887	Conformal ion implantation using pulsed plasma sources Adler RJ, Richter-Sand RJ, Clark EJ, Gregg CW
888 - 894	Solid-state modulators for plasma immersion ion implantation applications Gaudreau MPJ, Casey JA, Kempkes MA, Hawkey TJ, Mulvaney JM
895 - 899	Integrated high voltage modulator for plasma immersion ion implantation Gunzel R