Journal of Vacuum Science & Technology B

Journal of Vacuum Science & Technology B, Vol.18, No.2 Entire volume, number list

ISSN: 1071-1023 (Print)

In this Issue (102 articles)

607 - 611	Fabrication of a silicon based nanometric oscillator with a tip form mass for scanning force microcopy operating in the GHz range Kawakatsu H, Toshiyoshi H, Saya D, Fukushima K, Fujita H
612 - 616	Fabrication and characterization of nanoresonating devices for mass detection Davis ZJ, Abadal G, Kuhn O, Hansen O, Grey F, Boisen A
617 - 620	All-photoplastic, soft cantilever cassette probe for scanning force microscopy Genolet G, Despont M, Vettiger P, Anselmetti D, de Rooij NF
621 - 625	Modeling the hysteresis of a scanning probe microscope Dirscherl K, Garnaes J, Nielsen L, Jogensen JF, Sorensen MP
626 - 631	High resolution sampling electrostatic force microscopy using pulse width modulation technique Said RA, Cheung SP, Bridges GE
632 - 635	Point contact current-voltage measurements on individual organic semiconductor grains by conducting probe atomic force microscopy Kelley TW, Frisbie CD
636 - 638	Topography of skeletal muscle ryanodine receptors studied by atomic force microscopy Wei QQ, Chen SF, Cheng XY, Yu XB, Hu J, Li MQ, Zhu PH
639 - 643	Search of optimum bias voltage for oxide patterning on Si using scanning tunneling microscopy in air Tseng KS, Hsieh TE, Lo SC, Lin HF
644 - 647	Optical emission spectroscopy of microscopic gas discharges using a high-pressure scanning tunneling microscope Moller D, Eckert R, Haefke H, Guntherodt HJ
648 - 652	Atomic force microscope tip sharpening and evaluation by electric field confinement using a metal grid close to the tip Arai T, Tomitori M
653 - 660	Atom-by-atom analysis of diamond, graphite, and vitreous carbon by the scanning atom probe Nishikawa O, Ohtani Y, Maeda K, Watanabe M, Tanaka K
661 - 664	Microprocess for fabricating carbon-nanotube probes of a scanning probe microscope Nakayama Y, Nishijima H, Akita S, Hohmura KI, Yoshimura SH, Takeyasu K
665 - 678	Field emission properties of carbon nanotubes Groning O, Kuttel OM, Emmenegger C, Groning P, Schlapbach L
679 - 682	Beam steering by integrated electrodes for brighter field-emitter displays Py C
683 - 689	Stability of low-temperature amorphous silicon thin film transistors formed on glass and transparent plastic substrates Yang CS, Smith LL, Arthur CB, Parsons GN
690 - 694	Effect of post-nitride-passivation processing on the long-term stability of polysilicon integrated circuit resistors Rydberg M, Smith U, Sjodin H
695 - 699	Reduction of sidewall defect induced leakage currents by the use of nitrided field oxides in silicon selective epitaxial growth isolation for advanced ultralarge scale integration Bashir R, Su T, Sherman JM, Neudeck GW, Denton J, Obeidat A
700 - 705	Active corner engineering in the process integration for shallow trench isolation Balasubramanian N, Johnson E, Peidous IV, Ming S, Sundaresan R
706 - 712	Apparent depths of B and Ge deltas in Si as measured by secondary ion mass spectrometry Jiang ZX, Alkemade PFA, Tung CH, Wang JLF
713 - 716	Fabrication of dielectric hollow submicrometric pipes Soares LL, Cescato L, Cruz NC, de Moraes MB
717 - 720	Effect of lateral dimensional scaling on the thermal stability of thin CoSi2 layers reacted on polycrystalline silicon Alberti A, La Via F, Grimaldi MG, Ravesi S
721 - 728	Role of the substrate in the C49-C54 transformation of TiSi2 La Via F, Raineri V, Grimaldi MG, Miglio L, Iannuzzi M, Marabelli F, Bocelli S, Santucci S, Phani AR
729 - 732	Investigation of the mechanism for Ti/Al ohmic contact on etched n-GaN surfaces Sheu JK, Su YK, Chi GC, Jou MJ, Liu CC, Chang CM, Hung WC, Bow JS, Yu YC
733 - 740	Structural properties of AlGaN/GaN heterostructures on Si(111) substrates suitable for high-electron mobility transistors Kaiser S, Jakob M, Zweck J, Gebhardt W, Ambacher O, Dimitrov R, Schremer AT, Smart JA, Shealy JR
741 - 745	Incorporation of Si in InAlAs grown by low pressure metal-organic chemical vapor deposition assessed by optical and transport measurements Tribuzy CVB, Yavich B, Souza PL, Menchero JG
746 - 750	Increased electron mobility of InAsSb channel heterostructures grown on GaAs substrates by molecular beam epitaxy Kudo M, Mishima T, Tanaka T
751 - 756	Characteristics of InGaP/GaAs delta-doped heterojunction bipolar transistor Chen JY, Wang WC, Pan HJ, Feng SC, Yu KH, Cheng SY, Liu WC
757 - 760	AlGaN-based ultraviolet light detectors with integrated optical filters Karrer U, Dobner A, Ambacher O, Stutzmann M
761 - 764	Real time resistometric depth monitoring in the focused ion beam Latif A, Booij WE, Durrell JH, Blamire MG
765 - 773	Patterning of 0.175 mu m platinum features using Ar/O-2 chemically assisted ion-beam etching Gutsche MU, Athavale SD, Williams K, Hines D
774 - 779	Evaluation of exposure dose repeatability in synchrotron radiation lithography Itoga K, Sumitani H, Watanabe H, Kumada T, Kodera I, Satoh S, Ogushi N, Oishi S, Edo R, Yamamoto T, Watanabe Y
780 - 784	Supercritical resist dryer Namatsu H, Yamazaki K, Kurihara K
785 - 792	Plasma polymerized methylsilane. II. Performance for 248 nm lithography Monget C, Joubert O
793 - 798	Plasma polymerized methylsilane. III. Process optimization for 193 nm lithography applications Joubert O, Fuard D, Monget C, Weidman T
799 - 804	Pulsed plasma polymerization of an aromatic perfluorocarbon monomer: Formation of low dielectric constant, high thermal stability films Han LCM, Timmons RB, Lee WW
805 - 810	Spectroscopic investigations of plasma damage of kapton Lee S, Tien YC, Hsu CF
811 - 819	Ar addition effect on mechanism of fluorocarbon ion formation in CF4/Ar inductively coupled plasma Choi CJ, Kwon OS, Seol YS, Kim YW, Choi IH
820 - 833	Role of sidewall scattering in feature profile evolution during Cl-2 and HBr plasma etching of silicon Vyvoda MA, Li M, Graves DB, Lee H, Malyshev MV, Klemens FP, Lee JTC, Donnelly VM
834 - 840	Reduction of plasma induced damage in an inductively coupled plasma using pulsed source power Samukawa S, Noguchi K, Colonell JI, Bogart KHA, Malyshev MV, Donnelly VM
841 - 847	Simulation based plasma reactor design for improved ion bombardment uniformity Kim HC, Manousiouthakis VI
848 - 855	Effect of radio frequency bias power on SiO2 feature etching in inductively coupled fluorocarbon plasmas Schaepkens M, Oehrlein GS, Cook JM
856 - 863	Effects of radio frequency bias frequency and radio frequency bias pulsing on SiO2 feature etching in inductively coupled fluorocarbon plasmas Schaepkens N, Oehrlein GS, Cook JM
864 - 867	Selectivity enhancement of GaAs/AlGaAs dry etching by a purse-excited inductively coupled plasma source Matsukura Y, Tanaka H, Wada J
868 - 872	Direct observation of oxygen-induced structural changes in stainless-steel surfaces Cho B, Chung S, Kim K, Kang T, Park C, Kim B
873 - 876	Resist debris formation and proximity exposure effect in electron beam lithography Deshmukh PR, Rangra KJ, Wadhawan OP
877 - 879	Stamp technology for fabrication of field emitter from organic material Baba A, Hizukuri M, Iwamoto M, Asano T
883 - 883	Papers from the 12th International Vacuum Microelectronics Conference - Preface Hartnagel HL, Koops HWP, Dziuban J
884 - 887	Effect of ambient gas in sealing process on field emission characteristics Jung SJ, Oh JY, Woo KJ, Kim KS, Moon GJ, Kim MS, Lee NY, Ahn S
888 - 895	Integration of high voltage field emission display followed by macro- and nanostructural analysis on microtip Kim JM, Lee HW, Choi YS, Lee NS, Jung JE, Kim JW, Choi WB, Park YJ, Choi JH, Jin YW, Yi WK, Park NS, Park GS, Chee JK
896 - 899	Field emission arrays by silicon micromachining Debski T, Volland B, Barth W, Shi F, Hudek P, Rangelow IW, Grabiec P, Studzinska K, Zaborowski M, Mitura S
900 - 904	Field emitting inks for consumer-priced broad-area flat-panel displays Burden AP, Bishop HE, Brierley M, Friday JM, Hood C, Jones PGA, Khazov AY, Lee W, Riggs RJ, Shaw VL, Tuck RA
905 - 910	Mechanical and structural characterization of ceramic spacers with a high aspect ratio for 5.2 in. field emission displays Jung SY, Jung JE, Cha SN, Park NS, Han IT, Lee NS, Kim JM
911 - 913	Simulation of focusing field emission devices Lan YC, Lai JT, Chen SH, Wang WC, Tsai CH, Tsai KL, Sheu CY
914 - 918	Field-emission triodes with integrated anodes Garner DM, Long GM, Herbison D, Amaratunga GAJ
919 - 922	Calculations of field emission from AlxGa1-xN as a function of stoichiometry Chung MS, Cutler PH, Miskovsky NM, Kumar N
923 - 928	Structural and process characterization of high voltage operated field emission displays with focus electrodes Lee NS, Lee HW, Kim J, Jung SY, Choi JH, Park YJ, Kim JW, Jung JE, Park NS, Park SH, Jin YW, Choi WB, Kim JM, Chee JK
929 - 932	Geometry effects arising from anodization of field emitters Seidl A, Takai M, Hosono A, Yura S, Okuda S
933 - 936	Electron emission performance of nitrogen-doped hydrogen-free diamond-like carbon coating on Mo-Tip field emitter arrays Jung JH, Lee NY, Jang J, Oh MH, Ahn S
937 - 941	Calculation of the field emission current density from n-SI through injection in N-doped diamond Filip V, Nicolaescu D, Okuyama F, Plavitu CN
942 - 947	Atomic level analysis of silicon emitters utilizing the scanning atom probe Nishikawa O, Watanabe M, Ohtani Y, Maeda K, Tanaka K
948 - 951	Residual gas effects on the emission characteristics of silicon field emitter arrays Gilkes MJ, Nicolaescu D, Wilshaw PR
952 - 955	Individual tip evaluation in Si field emitter arrays by electrostatic lens projector Matsukawa T, Kanemaru S, Tokunaga K, Itoh J
956 - 961	Serial process for electron emission from solid-state field controlled emitters Binh VT, Dupin JP, Thevenard P, Purcell ST, Semet V
962 - 967	Electron field emission from polycrystalline silicon tips Vossough KK, Bower RW
968 - 971	Field emission carbon thin film and its lifetime and stability Thuesen LH, Tolt ZL, Fink RL, Yaniv Z, Marrese CM, Bandy S, Nishimoto C
972 - 975	Suppression of oxidation of metal emitters by incorporating ruthenium oxide Yoon YJ, Yoon DS, Baik HK, Lee SM, Song KM, Lee SJ
976 - 979	Field emitter array fabricated using focused ion and electron beam induced reaction Yavas O, Ochiai C, Takai M, Park YK, Lehrer C, Lipp S, Frey L, Ryssel H, Hosono A, Okuda S
980 - 983	Effect of carbon coating on electron field emission from polysilicon Chakhovskoi AG, Vossough K, Hunt CE, Kosarev AI, Vinogradov AJ, Shutov MV, Andronov AN, Robozerov SV
984 - 988	Process development of gated field emitter arrays with dry etched amorphous silicon microtips on glass substrates Choi JH, Park YJ, Lee HW, Oh HW, Kim JW, Lee NS, Cha SN, Jung JE, Choi YS, Kim JM
989 - 993	Fabrication of Spindt-type tungsten microtip field emitter arrays with optimized aluminum parting layers Park YJ, Choi JH, Lee HW, Lee NS, Kim JW, Hong SS, Park NS, Jung JE, Kim JM
994 - 996	Synthesis of high density arrays of nanoscaled gridded field emitters based on anodic alumina Li Y, Holland ER, Wilshaw PR
997 - 999	Low temperature properties of Ba-dispenser cathodes Geittner P, Gartner G, Raasch D
1000 - 1002	Ba losses due to oxygen adsorption on Ba-dispenser carthodes Raasch D, Geittner P, Gartner G
1003 - 1005	Study on local stability of field emitter arrays by using an emission microscope Nakane H, Muto Y, Yamane K, Adachi H
1006 - 1008	Lateral field emission diode with wedge-type tip and nanogap on separation by implantation of oxygen silicon Zang WJ, Lee JH, Lee JH, Bae YH, Choi CA, Hahm SH
1009 - 1013	Simulations of tapered Goubau line for coupling microwave signals generated by resonant laser-assisted field emission Alonso K, Hagmann MJ
1014 - 1017	Three-dimensional photon-stimulated field emission theory by transfer matrices and Green's functions Mayer A, Hagmann MJ, Vigneron JP
1018 - 1023	Estimation of emission field and emission site of boron-doped diamond thin-film field emitters Gotoh Y, Kondo T, Nagao M, Tsuji H, Ishikawa J, Hayashi K, Kobashi K
1024 - 1026	Electron emission process of phosphorus-doped homoepitaxial diamond films Kimura C, Koizumi S, Kamo M, Sugino T
1027 - 1030	Effect of nitrogen doping on field emission characteristics of patterned diamond-like carbon films prepared by pulsed laser deposition Shin IH, Lee TD
1031 - 1034	Field emission mechanism from undoped chemical vapor deposition diamond films Gohl A, Gunther B, Habermann T, Muller G, Schreck M, Thurer KH, Stritzker B
1035 - 1039	Relationship between field emission properties and spatial distributions of emission sites: Diamond films and graphitic carbon films Shim JY, Chi EJ, Baik HK, Song KM, Lee SJ
1040 - 1043	Effects of substrate bias on the structural and field emission properties of diamond films Shim JY, Chi EJ, Baik HK, Song KM, Lee SJ
1044 - 1047	Noise characteristics of emission current from conductive diamond-like carbon thin films coating on cone shaped silicon field emitters Sawada K, Kinoshita H, Masuda T, Ishida M
1048 - 1050	Nonstructured diamond film on etched silicon and its field emission behavior Xu NS, Chen J, Feng YT, Deng SZ
1051 - 1053	Modification of electron field emission properties from surface treated amorphous carbon thin films Carey JD, Poa CH, Forrest RD, Burden AP, Silva SRP
1054 - 1058	Field emission from 4.5 in. single-walled and multiwalled carbon nanotube films Chung DS, Choi WB, Kang JH, Kim HY, Han IT, Park YS, Lee YH, Lee NS, Jung JE, Kim JM
1059 - 1063	Aligned carbon nanotube films for cold cathode applications Obraztsov AN, Pavlovsky I, Volkov AP, Obraztsova ED, Chuvilin AL, Kuznetsov VL
1064 - 1067	Electron emission from C-60/C-70+Pd films containing Pd nanocrystals Czerwosz E, Dluzewski P, Gieraltowski W, Sobczak JW, Starnawska E, Wronka H
1068 - 1072	Design of field emission based magnetic sensors Marques MI, Serena PA, Nicolaescu D, Correia A
1073 - 1076	Proposal and modeling of a novel thermal microprobe using n-Si/nitrogen doped diamond cathodes Nicolaescu D, Filip V, Itoh J, Okuyama F
1077 - 1080	Analysis of a pressure sensor using n-Si/nitrogen doped diamond cathodes Nicolaescu D, Filip V, Itoh J, Okuyama F
1081 - 1084	Improvement of electron emission of silicon field emitter arrays by pulsed laser cleaning Yavas O, Suzuki N, Takai M, Hosono A, Okuda S
1085 - 1088	Fabrication of volcano-type TiN field emitter arrays Lee DG, Baik DK, Kang NS, Cho WK, Yoon SJ, Kim TY, Hwang HD, Ahn DH, Park MH
1089 - 1092	Field emission characteristics of boron nitride films Sugino T, Etou Y, Tagawa S, Gamo MN, Ando T
1093 - 1096	Field electron emission from W covered with In Saito Y, Nakane H, Adachi H
1097 - 1100	Eu3+-activated silica prepared by the alkoxide sol-gel method Zupanc-Meznar L, Cerc-Korosec R, Bukovec P, Gomilsek JP
1101 - 1105	Synthesis and modification of red oxide phosphors for low voltage excitation Gwak JH, Park SH, Jang JE, Lee SJ, Jung JE, Kim JM, Jin YW, Lee NS, Yi WK, Vorobyov VA
1106 - 1110	High resolution phosphor screening method for full-color field emission display applications Jang JE, Gwak JH, Jin YW, Lee SJ, Park SH, Jung JE, Lee NS, Kim JM
1111 - 1114	Effects of conduction type on field-electron emission from single Si emitter tips with extraction gate Matsukawa T, Kanemaru S, Tokunaga K, Itoh J
1115 - 1118	SiC field emitter arrays fabricated by transfer mold technique Gorecka-Drzazga A, Dziuban J, Prociow E
1119 - 1121	Is the tunneling electron really affected by electrostatic image forces? Valeyev VG, Hagmann MJ