Journal of Vacuum Science & Technology B

Journal of Vacuum Science & Technology B, Vol.19, No.2 Entire volume, number list

ISSN: 1071-1023 (Print)

In this Issue (52 articles)

323 - 326	Low-temperature Si epitaxial growth on oxide patterned wafers by ultrahigh vacuum electron cyclotron resonance chemical vapor deposition Yuh HK, Park JW, Lim SH, Hwang KH, Yoon E
327 - 332	Edge transistor elimination in oxide trench isolated N-channel metal-oxide-semiconductor field effect transistors Yang JN, Denton JP, Neudeck GW
333 - 336	Electrical characteristics of p-n junction diodes fabricated by Si epitaxy at low temperature using sputtering-type electron cyclotron resonance plasma Wang JL, Nakashima H, Gao JS, Iwanaga K, Furukawa K, Muraoka K, Sung Y
337 - 343	Effect of implantation energy on the microstructure evolution of low dose separation of implanted oxygen wafers Chen M, Chen J, Zheng W, Li L, Mu HC, Lin ZX, Yu YH, Wang X, Wang GY
344 - 353	Identification and sizing of particle defects in semiconductor-wafer processing Yoo SH, Weygand J, Scherer J, Davis L, Liu B, Christenson K, Butterbaugh J, Narayanswami N
354 - 360	Interactions between silica xerogel and tantalum Rogojevic S, Jain A, Wang F, Gill WN, Wayner PC, Plawsky JL, Lu TM, Yang GR, Lanford WA, Kumar A, Bakhru H, Roy AN
361 - 365	Sidewall oxidation behavior of dichlorosilane-based W-polycide gate Kim HS, Lee SM, Yeo IS, Lee SD, Pyi SH
366 - 371	Oxidation behavior of a patterned TiSi2/polysilicon stack Kim TK, Jang SA, Yeo IS, Yang JM, Park TS, Park JW
372 - 375	Stable titanium silicide formation on field oxide after BF2 ion implantation Mollat M, Demkov AA, Fejes P, Werho D
376 - 383	In situ real-time studies of nickel silicide phase formation Tinani M, Mueller A, Gao Y, Irene EA, Hu YZ, Tay SP
384 - 387	Surfactant-mediated control of surface morphology for Co epitaxial film on S-passivated semiconducting substrate Nath KG, Maeda F, Suzuki S, Watanabe Y
388 - 396	High density diffusion barrier of ionized metal plasma deposited Ti in Al-0.5%Cu/Ti/SiO2/Si structure Li S, Lee YK, Gao W, White T, Dong ZL, Latt KM
397 - 402	Improvements in wafer temperature measurements Cardoso A, Srivastava AK
403 - 409	Analysis of injection current through thin gate oxide during metal etch Kinoshita T, Krishnan S, Dostalik WW, McVittie JP
410 - 414	Electron temperature measurement in a slot antenna 2.45 GHz microwave plasma source Cotrino J, Palmero A, Rico V, Barranco A, Espinos JP, Gonzalez-Elipe AR
415 - 419	Sidewall passivation of GaAs in BCl3-containing atmospheres Franz G, Hosler W, Treichler R
420 - 426	X-ray photoelectron spectroscopy investigation of sidewall passivation films formed during gate etch processes Desvoivres L, Vallier L, Joubert O
427 - 432	Evaluation of plasmas fed with hydrofluorocarbons-oxygen mixtures for SiO2 dry etching Fracassi F, d'Agostino R, Illuzzi F
433 - 438	Released submicrometer Si microstructures formed by one-step dry etching Tian WC, Pang SW
439 - 446	Comparison of plasma chemistries and structure-property relationships of fluorocarbon films deposited from octafluorocyclobutane and pentafluoroethane monomers Agraharam S, Hess DW, Kohl PA, Allen SAB
447 - 455	High density plasma etching of low k dielectric polymers in oxygen-based chemistries Fuard D, Joubert O, Vallier L, Bonvalot M
456 - 460	Critical dimension control optimization methodology on shallow trench isolation substrate for sub-0.25 mu m technology gate patterning Fan MH, Gerung H, Yelehanka PR, Cheng A, Zhou MS, Chi C, Tan CH, Xie J
461 - 466	Enhancement of isopropanol-based photoresist removal by the addition of aqueous alkaline solutions Kamal T, Hess DW
467 - 475	Basic constraints for a multibeam lithography column Mankos M, Coyle S, Fernandez A, Sagle A, Owens W, Sullivan J, Chang THP
476 - 481	Space-charge effects in projection electron-beam lithography: Results from the SCALPEL proof-of-lithography system Liddle JA, Blakey MI, Bolan K, Farrow RC, Gallatin GM, Kasica R, Katsap V, Knurek CS, Li J, Mkrtchyan M, Novembre AE, Ocola L, Orphanos PA, Peabody ML, Stanton ST, Teffeau K, Waskiewicz WK, Munro E
482 - 486	Experimental model of industrial x-ray source MSX-1 with a vacuum spark for x-ray lithography Semyonov OG, Gurey AE, Tikhomirov AA
487 - 489	Imprinted electrically conductive patterns from a polyaniline blend Makela T, Haatainen T, Ahopeito J, Isotalo H
490 - 494	Optimization of InxGa1-xAs/ln(y)AI(1-y)As high electron mobility transistor structures grown by solid-source molecular beam epitaxy Zheng HQ, Radahakrishnan K, Yoon SF, Ng GI
495 - 501	Built-in electric fields in GaAs/GaAs structures with different in situ substrate treatments Luyo-Alvarado J, Melendez-Lira M, Lopez-Lopez M, Goto S
502 - 505	Microtwin formation mechanism in GaP/AlGaInP/GaAs double heterostructure light-emitting diodes Zeng W, Li YS, Ji G, Huang NY, Wang JJ, Zong XF
506 - 510	Defect structure of epitaxial ZnO films on (0001) sapphire studied by transmission electron microscopy Lim SH, Shindo D, Kang HB, Nakamura K
511 - 516	Interpretation of GaAs(110) scanning tunneling microscopy image contrast by the symmetry of the surface Bloch wave functions Jager ND, Weber ER, Salmeron M
517 - 522	Atomic force microscopy studies of self-assembled Si1-xGex islands produced by controlled relaxation of strained films Bashir R, Chao KJ, Kabir AE
523 - 526	Scanning tunneling spectroscopy of field-induced Au nanodots on ultrathin oxides on Si(100) Park JY, Phaneuf RJ, Williams ED
527 - 532	Direct measurement of emission current distribution of Spindt-type field emitters Xie CG, Hayes G, Wei Y
533 - 536	Growth of in situ CoSi2 layer by metalorganic chemical vapor deposition on Si tips and its field-emission properties Han BW, Rhee HS, Ahn BT
537 - 541	Porous field emission devices based on polyimide membranes using diode and triode configurations Mammana VP, Fonseca LRC, Filho AP, Monteiro OR, Ramprasad R, von Allmen P
542 - 545	Microtunneling sensors for vacuum level evaluation of field emission display devices Park HW, Ju BK, Park YK, Lee DJ, Lee YH, Kim CJ, Park JH, Oh MH
546 - 550	Transient brightness, current, and voltage characterization of organic light emitting devices Norris BJ, Wager JF
551 - 556	Investigating surface stress: Surface loss in ultrathin single-crystal silicon cantilevers Yang JL, Ono T, Esashi M
557 - 562	Silicon based quadrupole mass spectrometry using microelectromechanical systems Taylor S, Tindall RF, Syms RRA
563 - 566	Magnetoresistance characteristics of NiFe/Cu/CoFe/IrMn spin valves at elevated temperature Tanoue S, Tabuchi K
567 - 568	Field-induced growth of a quantum dot from Ge2H6 precursor gas using the scanning tunneling microscope Mezhenny S, Lyubinetsky I, Levy J, Yates JT
569 - 572	Fabrication of ideally ordered anodic porous alumina with 63 nm hole periodicity using sulfuric acid Asoh H, Nishio K, Nakao M, Yokoo A, Tamamura T, Masuda H
573 - 578	Fabrication of gated cathode structures using an in situ grown vertically aligned carbon nanofiber as a field emission element Guillorn MA, Simpson ML, Bordonaro GJ, Merkulov VI, Baylor LR, Lowndes DH
579 - 581	Thermally oxidized GaN film for use as gate insulators Kim H, Park SJ, Hwang HS
582 - 584	Emission uniformity enhancement between microfabricated tips in cold cathode arrays Schwoebel PR, Spindt CA, Holland CE, Panitz JA
585 - 588	Low temperature metalorganic chemical vapor deposition of conformal silver coatings for applications in high aspect ratio structures Eisenbraun ET, Klaver A, Patel Z, Nuesca G, Kaloyeros AE
589 - 592	Atomic force microscopy observation of layer-by-layer growth of ultrathin silicon dioxide by ozone gas at room temperature Maeda T, Kurokawa A, Sakamoto K, Ando A, Itoh H, Ichimura S
593 - 595	Mechanical nanofabrication of lignoceric acid monolayer with atomic force microscopy Sugihara H, Takahara A, Kajiyama T
596 - 599	Rapid prototyping of active microfluidic components based on magnetically modified elastomeric materials Jackson WC, Tran HD, O'Brien MJ, Rabinovich E, Lopez GP
600 - 600	Aqueous-based photoresist drying using supercritical carbon dioxide to prevent pattern collapse (vol 18, pg 3313, 2000) Goldfarb DL, de Pablo JJ, Nealey PF, Simons JP, Moreau WM, Angelopoulos M