Journal of Vacuum Science & Technology B

Journal of Vacuum Science & Technology B, Vol.20, No.2 Entire volume, number list

ISSN: 1071-1023 (Print)

In this Issue (43 articles)

495 - 506	Nucleation and film growth during copper chemical vapor deposition using the precursor Cu(TMVS)(hfac) Yang D, Hong J, Richards DF, Cale TS
507 - 511	Comparison of secondary ion mass spectroscopy analysis of ultrashallow phosphorus using Cs+, O-2(+), and CsC6- primary ion beams Loesing R, Guryanov GM, Phillips MS, Griffis DP
512 - 522	Band offsets of AlxGa1-xSbAs/InGaAs heterojunctions Cai WZ, Miller DL
523 - 530	Coalescence inhibition in nanosized titania films and related effects on chemoresistive properties towards ethanol Ferroni M, Guidi V, Martinelli G, Roncarati G, Comini E, Sberveglieri G, Vomiero A, Mea GD
531 - 536	Recent advances in resists for 157 nm microlithography Trinque BC, Chiba T, Hung RJ, Chambers CR, Pinnow MJ, Osburn BP, Tran HV, Wunderlich J, Hsieh YT, Thomas BH, Shafer G, DesMarteau DD, Conley W, Willson CG
537 - 543	Advancements to the critical ionization dissolution model Burns SD, Schmid GM, Tsiartas PC, Willson CG, Flanagin L
544 - 547	Influence of the cap layer on the Gibbs free energy above a layer of buried InGaAs islands Jogai B
548 - 553	Investigation of temperature coefficient of resistance and crystallization of semiconducting YBaCuO thin films using pulsed laser annealing Yildiz A, Celik-Butler Z, Butler DP, Kim CU
554 - 560	Chemically dependent traps and polytypes at Pt/Ti contacts to 4H and 6H-SiC Tumakha S, Brillson LJ, Jessen GH, Okojie RS, Lukco D, Zhang M, Pirouz P
561 - 565	Gap-filling capability and adhesion strength of the electroless-plated copper for submicron interconnect metallization Lin JH, Hsieh WJ, Hsu JW, Liu XW, Chen US, Shih HC
566 - 569	Photocapacitance of deep levels in GaP crystals surface treated by reactive ion etching Hashimoto H, Saito T, Suto K, Nishizawa J
570 - 574	Use of reflective and amorphous materials for dark field stepper alignment on silicon carbide substrates Mancini DP, Resnick DJ, Tompkins H, Moore KE
575 - 579	pH-mediated frictional forces at tungsten surfaces in aqueous environments Lim MS, Perry SS, Galloway HC, Koeck DC
580 - 589	Epitaxially overgrown, stable W-GaAs Schottky contacts with sizes down to 50 nm Wernersson LE, Georgsson K, Gustafsson A, Lofgren A, Montelius L, Nilsson N, Pettersson H, Seifert W, Samuelson L, Malm JO
590 - 595	Characterization of platinum films deposited by focused ion beam-assisted chemical vapor deposition Telari KA, Rogers BR, Fang H, Shen L, Weller RA, Braski DN
596 - 603	High-resolution in situ electron beam patterning using Ti(OC3H7)(4) as a negative-type resist Mitchell WJ, Hu EL
604 - 607	Study of the SiO2/Si interface using spectroscopic ellipsometry and x-ray reflectometry Itoh H, Mitani Y, Satake H
608 - 612	Electrochemical behavior of copper chemical mechanical polishing in KIO3 slurry Hsu JW, Chiu SY, Tsai MS, Dai BT, Feng MS, Shih HC
613 - 617	Optimum B+ implantation conditions for the edge termination of the Au/n-Si Schottky diodes Choi CS, Choi WY, Joo MH, Song JH, Im S
618 - 621	Nanofabrication of photonic crystal membrane lasers Cao JR, Lee PT, Choi SJ, Shafiiha R, Choi SJ, O'Brien JD, Dapkus PD
622 - 630	Atomistic simulations of deep submicron interconnect metallization Yang YG, Zhou XW, Johnson RA, Wadley HNG
631 - 634	Ge-rich Si1-xGex nanocrystal formation by the oxidation of an as-deposited thin amorphous Si0.7Ge0.3 layer Yoon TS, Kim KB
635 - 639	Effect of de-ionized water parameters rinse on postmetal etch residue removal using semiaqueous cleaning chemistries Small R, Kirk S, Cernat M
640 - 643	Nondestructive, in-line characterization of device performance parameters of shallow junction processes Kluth GJ, En WG, Borden P, Bechtler L, Nijmeijer R
644 - 649	Redistribution and electrical activation of ultralow energy implanted boron in silicon following laser annealing Whelan S, Privitera V, Italia M, Mannino G, Bongiorno C, Spinella C, Fortunato G, Mariucci L, Stanizzi M, Mittiga A
650 - 664	Towards the understanding of mechanical properties of super-and ultrahard nanocomposites Veprek S, Argon AS
665 - 667	Fabrication of nanocontacts for molecular devices using nanoimprint lithography Austin M, Chou SY
668 - 672	Height control of InAs/GaAs quantum dots by combining layer-by-layer in situ etching and molecular beam epitaxy Yang T, Ishikawa T, Kohmoto S, Nakamura Y, Nakamura H, Asakawa K
673 - 677	Chiral pattern formation: Combined transmission electron microscopy and atomic force microscopy study of tetracyanoquinodimethane thin film grown by vacuum evaporation Li JC, Liu WM, Xue ZQ
678 - 684	Atomic force microscopy study of the growth and annealing of Ge islands on Si(100) Liu B, Berrie CL, Kitajima T, Bright J, Leone SR
685 - 689	Carrier concentrations and deep trap concentrations in high temperature GaAs Halder NC, Krishnan V, Parshall D, Totzke DG
690 - 695	Relationship of CF2 concentration to deposition rates in the pyrolytic chemical vapor deposition process Cruden BA, Gleason KK, Sawin HH
696 - 703	Radiation-induced protective carbon coating for extreme ultraviolet optics Klebanoff LE, Clift WM, Malinowski ME, Steinhaus C, Grunow P, Bajt S
704 - 709	Combinatorial methodologies offer potential for rapid research of photoresist materials and formulations Lenhart JL, Jones RL, Lin EK, Soles CL, Wu WL, Goldfarb DL, Angelopoulos M
710 - 716	Proximity exposure effect analysis using the phenomenon of resist debris formation in electron beam lithography Deshmukh PR
717 - 720	Stress-induced failure of Si3N4 metal-insulator-metal capacitors fabricated by plasma enhanced chemical vapor deposition Suh D, Kang JY
721 - 724	Effect of thermal diffusion on a membrane-mask-distortion correction and compensation method Murooka K, Lim MH, Smith HI
725 - 727	Relaxed SiGe-on-insulator fabricated via wafer bonding and etch back Taraschi G, Langdo TA, Currie MT, Fitzgerald EA, Antoniadis DA
728 - 733	Stability of irradiation-induced point defects on walls of carbon nanotubes Krasheninnikova AV, Nordlund K
734 - 740	Improving resist resolution and sensitivity via electric-field enhanced postexposure baking Cheng MS, Yuan L, Croffie E, Neureuther A
741 - 746	Detailed study of scanning capacitance microscopy on cross-sectional and beveled junctions Duhayon N, Clarysse T, Eyben P, Vandervorst W, Hellemans L
747 - 751	Role of surface steps in the arrangement of silicon nano-dots on a vicinal Si(111) surface: Scanning tunneling microscopy investigation Ha JS, Park KH, Ko YJ, Park K
752 - 754	Low temperature wafer bonding by spin on glass Lin HC, Chang KL, Pickrell GW, Hsieh KC, Cheng KY