Journal of Vacuum Science & Technology B

Journal of Vacuum Science & Technology B, Vol.16, No.3 Entire volume, number list

ISSN: 1071-1023 (Print)

In this Issue (171 articles)

927 - 957	A review of ion projection lithography Melngailis J, Mondelli AA, Berry IL, Mohondro R
958 - 961	Electrical characteristics of heterostructure-emitter bipolar transistors using spacer layers Lin YS, Shieh HM, Hsu WC, Su JS, Huang JZ, Wu YH, Ho SD, Lin W
962 - 967	Fabrication of heterojunction bipolar transistors with buried subcollector layers for reduction of base-collector capacitance by molecular beam epitaxy regrowth Micovic M, Nordquist CD, Lubyshev D, Mayer TS, Miller DL, Streater RW, SpringThorpe AJ
968 - 971	Effects of active-channel thickness on submicron GaAs metal semiconductor field-effect transistor characteristics Ahmed MM
972 - 976	GaAs/AlGaAs heterojunction bipolar transistors with a base doping 10(20) cm(-3) grown by solid-source molecular beam epitaxy using CBr4 Micovic M, Nordquist C, Lubyshev D, Mayer TS, Miller DL, Streater RW, SpringThorpe AJ
977 - 988	Interaction of GaSe with GaAs(111) : Formation of heterostructures with large lattice mismatch Rumaner LE, Olmstead MA, Ohuchi FS
989 - 995	Measurements and calculations of the valence band offsets of SiOx/ZnS(111) and SiOx/CdTe(111) heterojunctions Ban DY, Xue JG, Fang RC, Xu SH, Lu ED, Xu PS
996 - 1001	Comparison of the structure and electrical properties of thermal and plasma grown oxides on GaAs Lefebvre PR, Lai L, Irene EA
1002 - 1006	Quantification of metal contaminants on GaAs with time-of-flight secondary ion mass spectrometry Schroder-Oeynhausen F, Burkhardt B, Fladung T, Kotter F, Schnieders A, Wiedmann L, Benninghoven A
1007 - 1011	Use of atomic force microscopy for analysis of high performance InGaAsP/InP semiconductor lasers with dry-etched facets Whaley RD, Gopalan B, Dagenais M, Gomez RD, Johnson FG, Agarwala S, King O, Stone DR
1012 - 1017	Bromine ion-beam-assisted etching of InP and GaAs Rossler JM, Royter Y, Mull DE, Goodhue WD, Fonstad CG
1018 - 1023	Low energy ion beam etching of InP using methane chemistry Carlstrom CF, Landgren G, Anand S
1024 - 1029	Optimization of In0.53Ga0.47As reactive ion etching with CH4/H-2 using design of experiment methods Zavieh L, Nordquist CD, Mayer TS
1030 - 1033	Minority-carrier recombination lifetimes of the frontside and backside of Si wafers subjected to plasma processing Itsumi M
1034 - 1037	Investigation of radiation damage in germanium induced by MeV Si+ Wang KM, Lu F, Meng MQ, Shi BR, Liu XD, Liu JT, Xu TB, Zhu PR
1038 - 1042	Control of etching-product-dependent shape and selectivity in gate polysilicon reactive ion etching Sato M, Arita Y
1043 - 1050	Residence time effects on SiO2/Si selective etching employing high density fluorocarbon plasma Chinzei Y, Ichiki T, Ikegami N, Feurprier Y, Shindo H, Horiike Y
1051 - 1058	X-ray photoelectron spectroscopy analyses of silicon dioxide contact holes etched in a magnetically enhanced reactive ion etching reactor Czuprynski P, Joubert O
1059 - 1067	Trends in aluminum etch rate uniformity in a commercial inductively coupled plasma etch system Beale D, Siu S, Patrick R
1068 - 1076	Surface diffusion model accounting for the temperature dependence of tungsten etching characteristics in a SF6 magnetoplasma Bounasri F, Pelletier J, Moisan M, Chaker M
1077 - 1081	Process characterization of plasma enhanced chemical vapor deposition of silicon nitride films with disilane as silicon source Nallapati G, Ajmera PK
1082 - 1086	Moderately in situ phosphorus-doped polycrystalline silicon by single wafer reduced pressure chemical vapor deposition Violette KE, Wise RL
1087 - 1092	Remote plasma chemical vapor deposition silicon oxynitride thin films : Dielectric properties Velez MH, Garrido OS, Gutierrez FF, Falcony C, Duart JMM
1093 - 1097	Novel global planarization technology for interlayer dielectrics using spin on glass film transfer and hot pressing Machida K, Kyuragi H, Akiya H, Imai K, Tounai A, Nakashima A
1098 - 1101	Properties of CeO2 thin films deposited on Si(100) and Si(111) substrates by radio frequency-magnetron sputtering Jang SH, Jung D, Roh Y
1102 - 1106	Directional copper deposition using dc magnetron self-sputtering Radzimski ZJ, Posadowski WM, Rossnagel SM, Shingubara S
1107 - 1109	Surface cleaning of copper by thermal and plasma treatment in reducing and inert ambients Hymes S, Kumar KS, Murarka SP, Wang W, Lanford WA
1110 - 1114	Metallization of Cu on polytetrafluoroethylene modified by keV Ar+ ion irradiation Cho JS, Choi WK, Koh SK, Yoon KH
1115 - 1122	Advanced techniques for glancing angle deposition Robbie K, Sit JC, Brett MJ
1123 - 1128	Method for angular sputter yield extraction for high-density plasma chemical vapor deposition simulators Kapur P, Bang DS, McVittie JP, Saraswat KC, Mountsier T
1129 - 1136	Thermal stability of thin CoSi2 layers on polysilicon implanted with As, BF2, and Si La Via F, Alberti A, Raineri V, Ravesi S, Rimini E
1137 - 1141	Investigation of Pt/Ta diffusion barrier using hybrid conductive oxide (RuO2) for high dielectric applications Yoon DS, Baik HK, Lee SM, Lee SI, Ryu H, Lee HJ
1142 - 1144	Size distribution of SiGeC quantum dots grown on Si(311) and Si(001) surfaces Jonczyk R, Hits DA, Kulik LV, Kolodzey J, Kaba M, Barteau MA
1145 - 1149	Direct nano-printing on Al substrate using a SiC mold Pang SW, Tamamura T, Nakao M, Ozawa A, Masuda H
1150 - 1154	Electron-beam lithography using a scanning transmission electron microscope CM12 (Philips) Lohau J, Friedrichowski S, Dumpich G
1155 - 1160	Metastable-atom-activated growth of an ultrathin carbonaceous resist for reactive ion etching of SiO2 and Si3N4 Thywissen JH, Johnson KS, Dekker NH, Prentiss M, Wong SS, Weiss K, Grunze M
1161 - 1166	Ga+ focused-ion-beam exposure and CF4 reactive-ion-etching development of Si3N4 resist optimized by Monte Carlo simulation Lee HY, Chung HB
1167 - 1173	Use of oxygen gas in diamond film growth for improving stress and crystallinity properties of an x-ray mask Noguchi H, Kubota Y, Takarada T
1174 - 1179	Prebreakdown and breakdown investigation of broad area electrodes in the micrometric regime Ma XY, Sudarshan TS
1180 - 1183	Experimental study of field emission characteristics as a function of the emitter to anode distance Ashihara K, Nakane H, Adachi H
1184 - 1187	Electron field emission from diamond grown by a multiple pulsed laser process Badzian A, Weiss BL, Roy R, Badzian T, Drawl W, Mistry P, Turchan MC
1188 - 1193	Environmental effect on the electron emission from diamond surfaces Zhirnov VV, Liu J, Wojak GJ, Cuomo JJ, Hren JJ
1194 - 1196	Thermal instability of a conduction channel in chemical vapor deposition diamond films Yu ZX, Xu NS
1197 - 1198	Electron emission from patterned diamond flat cathodes Tolt ZL, Fink RL, Yaniv Z
1199 - 1202	Field emission properties of diamondlike carbon films made by a novel laser evaporation technique Choi JO, Huh JW, Choi YH, Kim MJ, Kim H, Cho YR, Jeong HS
1203 - 1206	Fabrication of diamondlike carbon-coated field emitter triode using aluminum parting layer Lee S, Lee S, Jeon D, Lee KR, Ju BK, Oh MH
1207 - 1210	Performance of laser ablated, laser annealed BN emitters deposited on polycrystalline diamond Busta HH, Pryor RW
1211 - 1214	Electron emission characteristics of boron nitride films synthesized by plasma-assisted chemical vapor deposition Sugino T, Kawasaki S, Tanioka K, Shirafuji J
1215 - 1218	Hafnium carbide films and film-coated field emission cathodes Mackie WA, Xia TB, Blackwood JE, Williams SC, Davis PR
1219 - 1221	Effects of heat treatment on the field emission property of amorphous carbon nitride. Chi EJ, Shim JY, Choi DJ, Baik HK
1222 - 1225	Field emitter arrays based on natural self-organized porous anodic alumina Govyadinov AN, Zakhvitcevich SA
1226 - 1232	Vacuum microelectronic pressure sensor with novel "stepped" or "curved" cathode Xia SH, Liu J
1233 - 1235	Three-dimensional vacuum magnetic sensor with a Si emitter tip Itoh J, Uemura K, Kanemaru S
1236 - 1238	Experimental and theoretical considerations on evacuation of vacuum package for field emission display Han JI, Kwak MG, Park YK, Lim SC, Lee IK, Cho KI, Yoo HJ
1239 - 1243	Growth and luminescent characteristics of ZnGa2O4 thin film phosphor prepared by radio frequency magnetron sputtering Kim YJ, Jeong YH, Kim KD, Kang SG, Lee KG, Han JI, Park YK, Cho KI
1244 - 1248	Fabrication and characterization of mesoscopic superconductor-semiconductor hybrid structures Huber R, Rahman F, Thornton TJ, Norman A, Stradling RA
1249 - 1251	Silylated photoresist profiles imaged at 193 nm Hargreaves J
1252 - 1254	Method of a numerical golden rule calculation for single electron transistor simulations Nakashima H, Uozumi K
1255 - 1257	Electron beam lithography of nanostructures using 2-propanol : water and 2-propanol : methyl isobutyl ketone as developers for poly-methylmethacrylate Lavallee E, Beauvais J, Beerens J
1258 - 1260	Ultrahigh vacuum sample heating stage for molecular beam epitaxy applications with transfer mechanism to a remote scanning tunneling microscope Mendus T, Chambers A
1269 - 1269	Microelectronics and nanometer structures - Processing, measurement, and phenomena - Preface Evans KR
1270 - 1274	Surface composition and morphology of chemical beam epitaxy grown GaN thin films Kim E, Berishev I, Bensaoula A, Lee S, Perry SS, Waters K, Schultz JA
1275 - 1277	High mobility AlGaN/GaN heterostructures grown by gas-source molecular beam epitaxy Li LK, Alperin J, Wang WI, Look DC, Reynolds DC
1278 - 1281	Improved quality GaN films grown by molecular beam epitaxy on sapphire Reifsnider JM, Gotthold DW, Holmes AL, Streetman BG
1282 - 1285	Molecular beam epitaxy growth and properties of GaN, InGaN, and GaN/InGaN quantum well structures Johnson MAL, Brown JD, El-Masry NA, Cook JW, Schetzina JF, Kong HS, Edmond JA
1286 - 1288	Molecular beam epitaxy grown InGaN multiple quantum well structures optimized using in situ cathodoluminescence Van Hove JM, Chow PP, Wowchak AM, Klaassen JJ, Hickman R, Polley C
1289 - 1292	Luminescence of GaN/GaAs(111)B grown by molecular beam epitaxy with hydrazine Nikishin SA, Antipov VG, Guriev AI, Elyukhin VA, Faleev NN, Kudriavtsev YA, Lebedev AB, Shubina TV, Zubrilov AS, Temkin H
1293 - 1296	Microstructure and composition of InAsN alloys grown by plasma-source molecular beam epitaxy Beresford R, Stevens KS, Schwartzman AF
1297 - 1299	Effects of arsenic in gas-source molecular beam epitaxy Zhao Y, Deng F, Lau SS, Tu CW
1300 - 1304	Growth of GaN on lithium gallate substrates for development of a GaN thin compliant substrate Doolittle WA, Kropewnicki T, Carter-Coman C, Stock S, Kohl P, Jokerst NM, Metzger RA, Kang S, Lee KK, May G, Brown AS
1305 - 1308	Molecular beam epitaxy growth of SiC on Si(111) from silacyclobutane Chen J, Steckl AJ, Loboda MJ
1309 - 1311	Arsenic incorporation in HgCdTe grown by molecular beam epitaxy Aqariden F, Wijewarnasuriya PS, Sivananthan S
1312 - 1315	Selective area epitaxy of CdTe arrays Luo YY, Cavus A, Tamargo MC, Wan JZ, Pollak FH
1316 - 1320	Molecular beam epitaxy of CdS self-assembled quantum dots on ZnSe Kobayashi M, Nakamura S, Wakao K, Yoshikawa A, Takahashi K
1321 - 1325	Molecular beam epitaxial growth of HgCdTe midwave infrared multispectral detectors de Lyon TJ, Vigil JA, Jensen JE, Wu OK, Johnson JL, Patten EA, Kosai K, Venzor G, Lee V, Johnson SM
1326 - 1329	Modification of quantum dot properties via surface exchange and annealing : Substrate temperature effects Shen JJ, Brown AS, Metzger RA, Sievers B, Bottomley L, Eckert P, Carter WB
1330 - 1333	Nature of Stranski-Krastanow growth of InAs on GaAs(001) Ramachandran TR, Madhukar A, Mukhametzhanov I, Heitz R, Kalburge A, Xie Q, Chen P
1334 - 1338	Fabrication of strained InAs island ensembles on nonplanar patterned GaAs(001) substrates Konkar A, Heitz R, Ramachandran TR, Chen P, Madhukar A
1339 - 1342	Molecular beam epitaxial growth of InAs on a (311)A corrugated surface : Growth mechanism and morphology Lubyshev DI, Micovic M, Miller D, Chizhov I, Willis RF
1343 - 1346	Intersubband absorption and photoluminescence in Si-doped self-organized InAs/Ga(Al)As quantum dots Phillips J, Kamath K, Zhou X, Chervela N, Bhattacharya P
1347 - 1351	Growth optimization of GaxIn1-xAsyP1-y/GaAs(0.98 mu m) quantum wire heterostructures Moy AM, Pickrell GW, Cheng KY
1352 - 1355	Temperature stabilized 1.55 mu m photoluminescence in strained GaxIn1-xAs quantum wire heterostructures Wohlert DE, Moy AM, Chou LJ, Cheng KY, Hsieh KC
1356 - 1360	Substrate orientation dependence of carbon doping of GaAs using CBr4 source in molecular beam epitaxy Schulte DW, Subramanian S, Ungier L, Yoo HM, Venkateswaran U, Arthur JR
1361 - 1366	Iodine and carbon tetrabromide use in solid source molecular beam epitaxy Miller DL, Micovic M, Lubyshev DI, Cai WZ, Hwang WY, Zhang K
1367 - 1371	Electrical properties of InSb quantum wells remotely doped with Si Goldammer KJ, Liu WK, Khodaparast GA, Lindstrom SC, Johnson MB
1372 - 1376	Role of Al content on surface structure evolution of low temperature AlxGa1-xAs and its effect an critical thickness Carlin JA, Ringel SA, Sacks RN, Yap KS
1377 - 1380	Structural and optical properties of 1.3 mu m wavelength InAsP/InP/InGaP strain-compensated multiple quantum well modulators grown by gas-source molecular beam epitaxy Kuo HC, Thomas S, Horton TU, Moser BG, Stillman GE, Lin CH, Chen H
1381 - 1384	Analysis of lattice distortions in high-quality InGaAsP epitaxial overgrowth of rectangular-patterned INP gratings U'Ren GD, Goorsky MS, Koontz EM, Lim MH, Petrich GS, Kolodziejski LA, Wong VV, Smith HI, Matney KM, Wormington M
1385 - 1388	Al1-xInxAs1-ySby/GaSb heterojunctions and multilayers grown by molecular beam epitaxy for effective-mass superlattices Washington D, Hogan T, Chow P, Golding T, Littler C, Kirschbaum U
1389 - 1394	Cross-sectional scanning tunneling microscopy characterization of molecular beam epitaxy grown InAs/GaSb/AlSb heterostructures for mid-infrared interband cascade lasers Harper J, Weimer M, Zhang D, Lin CH, Pei SS
1395 - 1397	Structural properties of Ga2O3(Gd2O3)-GaAs interfaces Hong M, Marcus MA, Kwo J, Mannaerts JP, Sergent AM, Chou LJ, Hsieh KC, Cheng KY
1398 - 1400	Depletion mode GaAs metal-oxide-semiconductor field effect transistors with Ga2O3(Gd2O3) as the gate oxide Hong M, Ren F, Kuo JM, Hobson WS, Kwo J, Mannaerts JP, Lothian JR, Chen YK
1401 - 1403	AlGaAs/GaAs Npn heterojunction bipolar transistors grown on Si (311) by molecular beam epitaxy Jurkovic MJ, Alperin J, Du Q, Wang WI, Chang MF
1404 - 1407	Optimization of the aluminum composition in In-0.5(AlxGa1-x)(0.5)/P/In0.2Ga0.8As high electron mobility transistors for power applications Kuo JM, Wang YC, Lothian JR, Tsai HS, Chen YK, Mayo WE
1408 - 1412	Solid source molecular beam epitaxial growth of In0.5Ga0.5P pseudomorphic high electron mobility transistor structures Hoke WE, Lemonias PJ, Beaudoin RM, Torabi A
1413 - 1416	Monolithic integration of resonant tunneling diodes and heterojunction bipolar transistors on patterned InP substrates Chow DH, Hafizi M, Stanchina WE, Roth JA, Zinck JJ, Dubray JJ, Dunlap HL
1417 - 1421	Growth and characterization of defect-free GaAs/AlAs distributed Bragg reflector mirrors on patterned InP-based heterostructures Gebretsadik H, Kamath K, Linder KK, Bhattacharya P, Caneau C, Bhat R
1422 - 1425	GaInAsP/InP distributed feedback lasers grown directly on grated substrates by solid-source molecular beam epitaxy Hwang WY, Baillargeon JN, Chu SNG, Sciortino PF, Cho AY
1426 - 1429	Resonant-cavity-enhanced avalanche photodiodes grown by molecular beam epitaxy on InP for detection near 1.55 mu m Anselm KA, Nie H, Lenox C, Hansing C, Campbell JC, Streetman BG
1430 - 1434	77 K far-infrared hot-electron multi-quantum-well detectors Jacobs ES, Waldman J, Goodhue WD
1435 - 1438	Room-temperature midinfrared type-II quantum-well lasers with high power efficiency Lin CH, Murry SJ, Yang RQ, Yang BH, Pei SS, Yan C, Gianardi DM, McDaniel DL, Falcon M
1439 - 1445	Mechanical lithography using a single point diamond machining Goss SH, Grazulis L, Tomich DH, Eyink KG, Walck SD, Haas TW, Thomas DR, Lampert WV
1446 - 1450	Application of novel O- and H-atom sources in molecular beam epitaxy Hoflund GB, Wolan JT
1451 - 1455	Epitaxial growth of Al2O3/Si heterostructures Zborowski JT, Golding TD, Forrest RL, Marton D, Zhang Z
1456 - 1458	Single phase ZnSnAs2 grown by molecular beam epitaxy Seryogin GA, Nikishin SA, Temkin H, Schlaf R, Sharp LI, Wen YC, Parkinson B, Elyukhin VA, Kudriavtsev YA, Mintairov AM, Faleev NN, Baidakova MV
1459 - 1462	Molecular beam epitaxial growth of Bi2Se3- and Tl2Se-doped PbSe and PbEuSe on CaF2/Si(111) Fang XM, Chao IN, Strecker BN, McCann PJ, Yuan S, Liu WK, Santos MB
1463 - 1466	Eu : CaF2 layers on p-Si(100) grown using molecular beam epitaxy as materials for Si-based optoelectronics Chatterjee T, McCann PJ, Fang XM, Johnson MB
1467 - 1470	Molecular beam epitaxy growth and characterization of DyP/GaAs, DyAs/GaAs, GaAs/DyP/GaAs, and GaAs/DyAs/GaAs heterostructures Lee PP, Hwu RJ, Sadwick LP, Balasubramaniam H, Kumar BR, Lai TC, Chu SNG, Alvis R, Lareau RT, Wood MC
1471 - 1474	Toward device-quality GaAs growth by molecular beam epitaxy on offcut Ge/Si1-xGex/Si substrates Sieg RM, Ringel SA, Ting SM, Samavedam SB, Currie M, Langdo T, Fitzgerald EA
1475 - 1478	Multiwafer molecular beam epitaxy for high volume production of GaAs/AlGaAs heterojunction bipolar transistor wafers Block TR, Wojtowicz M, Han AC, Olson SR, Oki AK, Streit DC
1479 - 1483	Atomic force microscopy correlated with spectroscopic ellipsometry during homepitaxial growth on GaAs(111)B substrates Tomich DH, Eyink KG, Seaford ML, Taferner WF, Tu CW, Lampert WV
1484 - 1488	Real time in situ composition control of InGaAs lattice matched to InP by an 88-wavelength ellipsometer Kuo CH, Boonzaayer M, DeHerrera M, Kyong T, Zhang YH, Johs B, Hale JS
1489 - 1491	In situ relaxed Si1-xGex epitaxial layers with low threading dislocation densities grown on compliant Si-on-insulator substrates Yang Z, Alperin J, Wang WI, Iyer SS, Kuan TS, Semendy F
1492 - 1497	Noise reduction in optical in situ measurements for molecular beam epitaxy by substrate wobble normalization Bertness KA, Hickernell RK, Hays SP, Christensen DH
1498 - 1501	Application of in situ reflectance monitoring to molecular beam epitaxy of vertical-cavity structures Klem JF, Breiland WG, Fritz IJ, Drummond TJ, Lee SR
1502 - 1506	In situ temperature control of molecular beam epitaxy growth using band-edge thermometry Johnson S, Kuo CH, Boonzaayer M, Braun W, Koelle U, Zhang YH, Roth J
1507 - 1510	Reflection high-energy electron diffraction during substrate rotation : A new dimension for in situ characterization Braun W, Moller H, Zhang YH
1515 - 1515	Microelectronics and nanometer structures - Processing, measurement, and phenomena - Preface Pearsall TP, Evangelisti F
1516 - 1519	Device design and circuit modeling issues in ultrahigh vacuum chemical vapor deposition SiGe heterojunction bipolar transistors Cressler JD, Joseph AJ, Salmon SL, Harame DL
1520 - 1524	Midinfrared silicon/germanium based photodetection Presting H, Hepp M, Kibbel H, Thonke K, Sauer R, Mahlein M, Cabanski W, Jaros M
1525 - 1528	Progress toward silicon-based intersubband lasers Soref RA, Friedman L, Voon LCLY, Ram-Mohan LR, Sun G
1529 - 1532	Mechanisms and device applications of light emitting phenomena of Si/Si1-xGex/Si quantum wells Miyao M, Nakagawa K, Kimura Y, Hirao M
1533 - 1537	Controlling transient enhanced diffusion effects in high-frequency Si0.7Ge0.3 heterojunction bipolar transistors with implanted emitters Nanver LK, Visser CCG, van den Bogaard A
1538 - 1540	Two-dimensional drift-diffusion simulation of superficial strained-Si/Si1-xGex channel metal-oxide-semiconductor field-effect transistors Roldan JB, Gamiz F, Lopez-Villanueva JA, Cartujo P
1541 - 1548	High-speed Si/SiGe technology for next generation wireless system applications Larson LE
1549 - 1554	Facet investigation in selective epitaxial growth of Si and SiGe on (001) Si for optoelectronic devices Vescan L, Grimm K, Dieker C
1555 - 1559	Scanning tunneling microscopy studies of Ge/Si films on Si(111) : From layer by layer to quantum dots Motta N, Sgarlata A, Calarco R, Cal JC, Nguyen Q, Prosposito P, Balzarotti A, De Crescenzi M
1560 - 1563	Si growth on partially relaxed Ge islands Sutter P, Mateeva E, Lagally MG
1564 - 1567	Kinetic roughening of Si surfaces and surfactant effect in low temperature molecular beam epitaxy growth Gallas B, Berbezier I, Derrien J, Gandolfo D, Ruiz J, Zagrebnov VA
1568 - 1574	X-ray scattering analysis of interface roughness and diffusion Baribeau JM
1575 - 1581	Self-assembled Ge dots : Growth, characterization, ordering, and applications Schittenhelm P, Engel C, Findeis F, Abstreiter G, Darhuber AA, Bauer G, Kosogov AO, Werner P
1582 - 1588	New insights on SiGe growth instabilities Berbezier I, Gallas B, Lapena L, Fernandez J, Derrien J, Joyce B
1589 - 1594	KrF laser epitaxy of silicon germanium alloy layers by irradiation of Si(1-x)Gex/Si (100) structures Larciprete R, Grimaldi MG, Borsella E, Cozzi S, Martelli S, Pieretti S, Vianey I
1595 - 1598	New strain-relieving microstructure in pure-Ge/Si short-period superlattices Sunamura H, Usami N, Shiraki Y, Fukatsu S
1599 - 1603	Plasma-assisted chemical vapor deposition growth of SiC on Si(100) : Morphology and electronic structure Bittencourt C, De Seta M, Evangelisti F
1604 - 1609	Theory of FeSi2 direct gap semiconductor on Si(100) Miglio L, Meregalli V
1610 - 1615	Strain relaxation and surface morphology of compositionally graded Si/Si1-xGex buffers Li JH, Springholz G, Stangl J, Seyringer H, Holy V, Schaffler F, Bauer G
1616 - 1620	X-ray absorption at Ge L-3 edges as a tool to investigate Ge/Si(001) interfaces and heterostructures Castrucci P, Gunnella R, De Crescenzi M, Sacchi M, Dufour G, Rochet F
1621 - 1626	Characterization of strained Si/Si1-yCy structures prepared by molecular beam epitaxy Joelsson KB, Ni WX, Pozina G, Pettersson LAA, Hallberg T, Monemar B, Hansson GV
1627 - 1630	Germanium-rich SiGe bulk single crystals grown by the vertical Bridgman method and by zone melting Barz A, Dold P, Kerat U, Recha S, Benz KW, Franz M, Pressel K
1631 - 1633	Electron mobility in quantized beta-SiC inversion layers Gamiz F, Roldan JB, Lopez-Villanueva JA, Cartujo P
1634 - 1638	Two-dimensional electron gas mobility as a function of virtual substrate quality in strained Si/SiGe heterojunctions Churchill AC, Robbins DJ, Wallis DJ, Griffin N, Paul DJ, Pidduck AJ, Leong WY, Williams GM
1639 - 1643	Electronic properties of Si/Si1-x-yGexCy heterojunctions Stein BL, Yu ET, Croke ET, Hunter AT, Laursen T, Mayer JW, Ahn CC
1644 - 1647	Electrical properties and uniformity of two dimensional electron gases grown on cleaned SiGe virtual substrates Paul DJ, Ahmed A, Pepper M, Churchill AC, Robbins DJ, Wallis DJ, Pidduck AJ
1648 - 1654	State of the art of 3C-SiC/silicon on insulators Camassel J
1655 - 1658	Cyclotron resonance measurements of Si/SiGe two-dimensional electron gases with differing strain Griffin N, Arnone DD, Paul DJ, Pepper M, Robbins DJ, Churchill AC, Fernandez JM
1659 - 1662	Contacts on Si1-x-yGexCy alloys : Electrical properties and thermal stability Aubry-Fortuna V, Barthula M, Perrossier JL, Meyer F, Demuth V, Strunk HP, Chaix-Pluchery O
1663 - 1666	Transport properties of unintentionally doped iron silicide thin films on silicon(111) Muret P, Ali I
1667 - 1669	Hole transport investigation in unstrained and strained SiGe Bufler FM, Graf P, Meinerzhagen B, Fischer G, Kibbel H
1670 - 1674	Magneto-transport studies of Si/SiGe and Si/SiGeC quantum well structures grown by molecular beam epitaxy at low temperatures Grutzmacher D, Hartmann R, Schnappauf P, Gennser U, Sigg H, Bachle D, Brosig S
1675 - 1678	Electrical characterization of Si1-xGex p-metal-oxide-semiconductor channel by admittance spectroscopy Alieu J, Souifi A, Bremond G, Bouillon P, Skotnicki T
1679 - 1683	Substitutional carbon incorporation into molecular beam epitaxy-grown Si1-yCy layers Zerlauth S, Penn C, Seyringer H, Brunthaler G, Bauer G, Schaffler F
1684 - 1686	Influence of carbon on the electrical properties of W/SiGeC-p/Si(100)-p Schottky diodes Serpentini M, Bremond G, Aubry-Fortuna V, Meyer F, Mamor M
1687 - 1691	Substitutional carbon impurities in thin silicon films : Equilibrium structure and properties Kelires PC, Kaxiras E
1692 - 1696	Acetylene gas as a carbon source : An x-ray photoemission spectroscopy and near-edge x-ray absorption fine structure spectroscopy study of its stability on Si(111)-7x7 Rochet F, Dufour G, Stedile FC, Sirotti F, Prieto P, De Crescenzi M
1697 - 1700	Absorption and emission spectroscopy of intersubband transitions in Si1-xGex/Si quantum wells Boucaud P, Gauthier-Lafaye O, Lourtioz JM, Julien FH, Dekel E, Ehrenfreund E, Gershoni D, Sagnes I, Campidelli Y
1701 - 1706	SiGeC : Band gaps, band offsets, optical properties, and potential applications Brunner K, Schmidt OG, Winter W, Eberl K, Gluck M, Konig U
1707 - 1709	Visible light from Si/SiO2 superlattices in planar microcavities Lockwood DJ, Baribeau JM, Sullivan BT
1710 - 1712	Photoluminescence from pure-Ge/pure-Si neighboring confinement structure Usami N, Miura M, Sunamura H, Shiraki Y
1713 - 1716	Photoluminescence from pseudomorphic Si1-yCy layers on Si substrates Penn C, Zerlauth S, Stangl J, Bauer G, Brunthaler G, Schaffler F
1717 - 1720	Photoluminescence and photoconductivity of Si- and Ge-rich SiGe bulk crystals Franz M, Pressel K, Barz A, Dold P, Benz KW
1721 - 1724	Investigation of Ge on Si(100) quantum wells by photoelectron spectroscopies Di Gaspare L, Capellini G, Cianci E, Evangelisti F
1725 - 1731	Defect structure, distribution, and dynamics in diamond-on-silicon optoelectronic devices Rossi MC, Salvatori S, Galluzzi F
1732 - 1736	Properties of Er-related emission in in situ doped Si epilayers grown by molecular beam epitaxy Buyanova IA, Chen WM, Pozina G, Ni WX, Hansson GV, Monemar B
1737 - 1739	Effect of hydrogenation on misfit dislocations in SiGe/Si structures for photovoltaic applications Daami A, Bremond G, Caymax M, Poortmans J
1740 - 1744	Suppression of the base-collector leakage current in integrated Si/SiGe heterojunction bipolar transistors Assous M, de Berranger E, Regolini JL, Mouis M, Hernandez C
1745 - 1749	Investigation of process induced defects in SiGe/Si heterojunction bipolar transistors by deep-level transient spectroscopy Souifi A, De Barros O, Bremond G, Le Tron B, Mouis M, Vincent G, Ashburn P
1750 - 1753	Effects of carbon on boron diffusion in SiGe : Principles and impact on bipolar devices Osten HJ, Heinemann B, Knoll D, Lippert G, Rucker H
1754 - 1756	Thick pure Ge films for photodetectors Scarinci F, Fiordelisi M, Calarco R, Lagomarsino S, Colace L, Masini G, Barucca G, Coffa S, Spinella S
1757 - 1761	Oxidation of Si1-yCy (O <= y <= 0.02) strained layers grown on Si(001) Pressel K, Franz M, Kruger D, Osten HJ, Garrido B, Morante JR
1762 - 1766	Atomic force microscopy study of the morphological modifications induced by laser processing of Si(1-x)Gex/Si samples Padeletti G, Larciprete R