Journal of Vacuum Science & Technology B

Journal of Vacuum Science & Technology B, Vol.21, No.3 Entire volume, number list

ISSN: 1071-1023 (Print)

In this Issue (44 articles)

927 - 930	Focused ion beam induced surface amorphization and sputter processes Basnar B, Lugstein A, Wanzenboeck H, Langfischer H, Bertagnolli E, Gornik E
931 - 935	Interface analysis of atomic layer deposited-TiN gate electrodes on ultrathin SiO2 layers Sell B, Sanger A, Krautschneider W
936 - 941	Effect of laser annealing on delta-doped boron for super-steep-retrograded well formation using selective Si epitaxy Lee JH, Lee JY, Weon DH, Hahn SH, Lee SK, Ichikawa M
942 - 948	Using electron cyclotron resonance sputtering in the deposition of ultrathin Al2O3 gate dielectrics Jin Y, Saito K, Shimada M, Ono T
949 - 952	All solid-state rechargeable thin-film microsupercapacitor fabricated with tungsten cosputtered ruthenium oxide electrodes Kim HK, Cho SH, Ok YW, Seong TY, Yoon YS
953 - 956	Electrical properties of aluminum oxide films deposited on indium-tin-oxide glasses Lee J, Kim SS, Im S
957 - 959	Integrally gated carbon nanotube field emission cathodes produced by standard microfabrication techniques Guillorn MA, Hale MD, Merkulov VI, Simpson ML, Eres GY, Cui H, Puretzky AA, Geohegan DB
960 - 965	Chemical mechanical polishing defect reduction via a plasma etch in the 0.15 mu m shallow trench isolation process Chiu CM, Yen TF, Chiu KF
966 - 969	Two-dimensional photonic crystals by focused-ion-beam etching of multilayer membranes Wang K, Filloux P, Paraire N, Cabarrocas PRI, Bulkin P
970 - 974	Comparison of two surface preparations used in the homoepitaxial growth of silicon films by plasma enhanced chemical vapor deposition Reidy S, Varhue WJ, Lavoie M, Mongeon S, Adams E
975 - 980	Selective epitaxial growth for plugs of high-density devices Cheong WS, Lee SK, Roh JS
981 - 983	Depletion- and enhancement-mode In0.49Ga0.51P/InGaAs/AlGaAs high-electron-mobility transistors with high-breakdown voltage Li YJ, Hsu WC, Chen YW, Shieh HM
984 - 988	Photoluminescence and micro-Raman scattering in Mn-doped ZnS nanocrystalline semiconductors Yang RD, Tripathy S, Tay FEH, Gan LM, Chua SJ
989 - 995	Simple magnetic focusing for an electron gun based on a microtip Barjon J, Jalabert D, Levy F
996 - 999	Fabrication of multiwalled carbon nanotube bridges by poly-methylmethacrylate suspended dispersion Lee SB, Teo KBK, Amaratunga GAJ, Milne WI, Chhowalla M, Hasko DG, Ahmed H
1000 - 1003	Reduction of grain-boundary potential barrier height in polycrystalline silicon with hot H2O-vapor annealing probed using point-contact devices Kamiya T, Durrani ZAK, Ahmed H, Sameshima T, Furuta Y, Mizuta H, Lloyd N
1004 - 1007	Individual free-standing carbon nanofibers addressable on the 50 nm scale Moser J, Panepucci R, Huang ZP, Li WZ, Ren ZF, Usheva A, Naughton MJ
1008 - 1018	Quantification of line-edge roughness of photoresists. I. A comparison between off-line and on-line analysis of top-down scanning electron microscopy images Patsis GP, Constantoudis V, Tserepi A, Gogolides E, Grozev G
1019 - 1026	Quantification of line-edge roughness of photoresists. II. Scaling and fractal analysis and the best roughness descriptors Constantoudis V, Patsis GP, Tserepi A, Gogolides E
1027 - 1031	Enhanced infrared detection characteristics of VOx films prepared using alternating V2O5 and V layers Kang HK, Han YH, Shin HJ, Moon S, Kim TH
1032 - 1036	Real-time observation of electromigration-induced stress changes with imaging x-ray topography Solak HH, David C, Gobrecht J, Drakopoulos M
1037 - 1047	Atomic force microscopy and x-ray diffraction studies of aluminum-induced crystallization of amorphous silicon in Al/alpha-SiM, alpha-Si : H/Al, and Al/alpha-Si : H/Al thin film structures Kishore R, Shaik A, Naseem HA, Brown WD
1048 - 1054	Correlation between structural and transport properties of silicon thin films deposited at various substrate temperatures Roy D, Das C, Longeaud C, Houze F, Ray S
1055 - 1063	Real-time, in situ film thickness metrology in a 10 Torr W chemical vapor deposition process using an acoustic sensor Henn-Lecordier L, Kidder JN, Rubloff GW, Gogol CA, Wajid A
1064 - 1069	Improved room-temperature continuous wave GaAs/AlGaAs and InGaAs/GaAs/AlGaAs lasers fabricated on Si substrates via relaxed graded GexSi1-x buffer layers Groenert ME, Pitera AJ, Ram RJ, Fitzgerald EA
1070 - 1073	Height measurement of dsDNA and antibodies adsorbed on solid substrates in air by vibrating mode scanning polarization force microscopy Li XJ, Sun JL, Zhou XF, Li G, He PG, Fang YZ, Li MQ, Hu J
1074 - 1079	Improvement on electron field emission properties of nanocrystall line diamond films by co-doping of boron and nitrogen Lin IN, Hsu T, Lin GM, Chou YP, Chen TT, Cheng HF
1080 - 1083	Rutherford backscattering analysis of GaN decomposition Choi HW, Cheong MG, Rana MA, Chua SJ, Osipowicz T, Pan JS
1084 - 1091	Nanocomposite coatings within the system Ti-B-N deposited by plasma assisted chemical vapor deposition Stoiber M, Mitterer C, Schoeberl T, Badisch E, Fontalvo G, Kullmer R
1092 - 1098	Coating protecting layers in alternating current-plasma display panels Lee WT, Im SJ, Lee DY, Yu SG, Kim JM, Han JG, Lee JW, Choi EH
1099 - 1107	Improved nucleation of TiN atomic layer deposition films on SILK low-k polymer dielectric using an Al2O3 atomic layer deposition adhesion layer Elam JW, Wilson CA, Schuisky M, Sechrist ZA, George SM
1108 - 1111	Characteristics of plasma display with rf microdischarge Kang J
1112 - 1119	Electrical and plasma property measurements of a deep reactive ion etching Bosch process Abraham IC, Woodworth JR, Riley ME, Miller PA, Shul RJ, Willison CG
1120 - 1125	Emission properties of carbon nanotubes grown on various catalytic layers coated glass using plasma-enhanced chemical-vapor deposition with CO gas Han JH, Choi SH, Lee TY, Yoo JB, Park CY, Jung TW, Kim HJ, Park YJ, Han IT, Heo JN, Lee JH, Yu S, Yi WK, Park GS, Lee NS, Kim JM
1126 - 1128	Measurement of V/III ratio using threshold photoemission Zinck JJ, Owen JHG, Barvosa-Carter W
1129 - 1133	Exploring metal vapor vacuum arc implanted copper to catalyze electroless-plated copper film on a TaN/FSG/Si assembly Chen US, Lin JH, Hsieh WJ, Shih PS, Weng KW, Wang DY, Chang YS, Shih HC
1134 - 1142	Comparative study of MeV C+ and C-2(+) ion implantation in GaAs(100): Surface roughness and evaluation of lattice strain Kuri G, Materlik G, Hagen V, Wiesendanger R
1143 - 1148	Sub-150 nm,, high-aspect-ratio features using near-field phase-shifting contact lithography Dang H, Tan JLP, Horn MW
1149 - 1156	Effect of chemical vapor deposition energy sources on the structure of SiC prepared by carbon nanotubes-confined reaction Shajahan M, Mo YH, Nahm KS
1157 - 1160	Effect of current spreading on luminescence improvement in selectively oxidized AlGaInP light-emitting diodes Nee TE, Chien KT, Chou YL, Chou LC, Lin CH, Lin RM, Fang BR, Chang SS
1161 - 1168	Effects of Ti insertion between Cu and TiN layers on reliability in Cu/Ti/TiN/Ti layered damascene interconnects Abe K, Onoda H
1169 - 1175	X-ray photoelectron spectroscopy study of electrodeposited nanostructured CeO2 films Wang AQ, Punchaipetch P, Wallace RM, Golden TD
1176 - 1180	High aspect ratio etching of atomic force microscope-patterned nitrided silicon Harfenist SA, Yazdanpanah MM, Cohn RW
1181 - 1181	The influence of the electronic structure on the field electron emission from carbon nanotubes (vol B21, pg 382, 2003) Filip V, Nicolaescu D, Tanemura M, Okuyama F