Journal of Vacuum Science & Technology B

Journal of Vacuum Science & Technology B, Vol.23, No.3 Entire volume, number list

ISSN: 1071-1023 (Print)

In this Issue (92 articles)

877 - 894	Nanofabrication by scanning probe microscope lithography: A review Tseng AA, Notargiacomo A, Chen TP
895 - 899	Effect of thermal annealing on 120-nm-T-shaped-Ti/Pt/Au-gate AlGaN/GaN high electron mobility transistors Yamashita Y, Endoh A, Ikeda K, Hikosaka K, Mimura T, Higashiwaki M, Matsui T, Hiyamizu S
900 - 907	Etching silicon-containing bilayer resists in ammonia-based plasmas Panda S, Wise R, Mahorowala A, Balasubramanium V, Sugiyama K
908 - 917	Thin-film transformations and volatile products in the formation of nanoporous low-k polymethylsilsesquioxane-based dielectric Lazzeri P, Vanzetti L, Anderle M, Bersani M, Park JJ, Lin Z, Briber RM, Rubloff GW, Kim HC, Miller RD
918 - 925	Imaging patterns of intensity in topographically directed photolithography Paul KE, Breen TL, Hadzik T, Whitesides GM, Smith SP, Prentiss M
926 - 929	Characteristics of perylene-based organic thin-film transistor with octadecyltrichlorosilane monolayer Park DS, Kang SJ, Kim HJ, Jang MH, Noh M, Yoo KH, Whang CN, Lee YS, Lee MH
930 - 933	Nitrogen-incorporated multiwalled carbon nanotubes grown by direct current plasma-enhanced chemical vapor deposition Yang JH, Kim BJ, Kim YH, Lee YJ, Ha BH, Shin YS, Park SY, Kim HS, Park CY, Yang CW, Yoo JB, Kwon MH, Ihm K, Song HJ, Kang TH, Shin HJ, Park YJ, Kim JM
934 - 939	Fabrication of two- and three-dimensional photonic crystals of titania with submicrometer resolution by deep x-ray lithography Awazu K, Wang XM, Fujimaki M, Kuriyama T, Sai A, Ohki Y, Imai H
940 - 946	Strain analysis in silicon substrates under uniaxial and biaxial stress by convergent beam electron diffraction Toh SL, Loh KP, Boothroyd CB, Li K, Ang CH, Chan L
947 - 953	Direct deposition of aligned nanorod array onto cylindrical objects Fan JG, Zhao YP
954 - 958	Effect of carrier hopping and relaxing on photoluminescence line shape in self-organized InAs quantum dot heterostructures Nee TE, Wu YF, Lin RM
959 - 965	Ion beam sputter deposition of soft x-ray Mo/Si multilayer mirrors Schubert E, Frost F, Ziberi B, Wagner G, Neumann H, Rauschenbach B
966 - 969	Cross sections for the investigation of the electroluminescence excitation of InGaN/GaN quantum wells in blue light-emitting diodes with multiquantum barriers Nee TE, Wang JC, Lin CH, Lin RM, Huang CA, Fang BR, Wang RY
970 - 978	Millisecond microwave annealing: Driving microelectronics nano Thompson K, Booske JH, Ives RL, Lohr J, Gorelov Y, Kajiwara K
979 - 983	Ta-rich atomic layer deposition TaN adhesion layer for Cu interconnects by means of plasma-enhanced atomic layer deposition Furuya A, Tsuda H, Ogawa S
984 - 989	Fabrication and characterization of slanted nanopillars array Fu Y, Bryan NKA
990 - 994	Enhancement of He-induced cavities in silicon by hydrogen plasma treatment Liu CL, Ntsoenzok E, Vengurlekar A, Ashok S, Alquier D, Ruault MO, Dubois C
995 - 1003	Micro/nanotribological study of perfluorosilane SAMs for antistiction and low wear Kasai T, Bhushan B, Kulik G, Barbieri L, Hoffmann P
1004 - 1009	Photoreflectance characterization of InP/GaAsSb double-heterojunction bipolar transistor epitaxial wafers Sugiyama H, Oda Y, Kobayashi T, Uchida M, Watanabe N
1010 - 1012	High quality AlSb bulk material on Si substrates using a monolithic self-assembled quantum dot nucleation layer Balakrishnan G, Huang S, Khoshakhlagh A, Dawson LR, Xin YC, Conlin P, Huffaker DL
1013 - 1017	Effects of oxygen plasma on optical and electrical characteristics of multiwall carbon nanotubes grown on a four-probe patterned Fe layer Lee JS, Chandrashekar A, Park BM, Overzet LJ, Lee GS
1018 - 1023	Chemisorption of C-60 on the Si(001)-2 x 1 surface at room temperature Cheng CP, Pi TW, Ouyang CP, Wen JF
1024 - 1028	Comparison of ZnO metal-oxide-semiconductor field effect transistor and metal-semiconductor field effect transistor structures grown on sapphire by pulsed laser deposition Kao CJ, Kwon YW, Heo YW, Norton DP, Pearton SJ, Ren F, Chi GC
1029 - 1031	Effect of cerium concentration on the structural and ferroelectric properties of Bi4-xCexTi3O12 thin films for ferroelectric random access memories Oh YN, Yoon SG
1032 - 1035	Integrated field effect transistors for microelectromechanical systems applications, modeling, and results Young RW, Draper BL
1036 - 1040	Effect of gate hard mask and sidewall spacer structures on the gate oxide reliability of W/WNx/poly-Si gate MOSFET for high density DRAM applications Lim KY, Cho HJ, Jang SA, Kim YS, Oh JG, Lee JH, Yang HS, Sohn HC, Kim JW
1041 - 1046	Nanostructured carbon-metal composite films Narayan RJ, Scholvin D
1047 - 1049	Growth and characterization of Si-doped self-assembled InAs quantum dots Nah J
1050 - 1053	Implementing multiple band gaps using inductively coupled argon plasma enhanced quantum well intermixing Nie D, Mei T, Djie HS, Chin MK, Tang XH, Wang YX
1054 - 1059	Characterization of small-mismatch GaAsSbN on GaAs grown by solid source molecular beam epitaxy Wicaksono S, Yoon SF, Tan KH, Loke WK
1060 - 1063	Self-terminated oxide polish technique for the waveguide ridge laser diode fabrication Peng TC, Yang CC, Huang YH, Wu MC, Ho CL, Ho WJ
1064 - 1067	Improved high temperature growth of GaInNAsSb by molecular beam epitaxy Maranowski KD, Smith JM, Fanning TR, Jewell JL
1068 - 1071	Lateral templating of self-organized ripple morphologies during focused ion beam milling of Ge Ichim S, Aziz MJ
1072 - 1075	Low resistance ohmic contact to p-type GaN using Pd/lr/Au multilayer scheme Bae JW, Hossain T, Adesida I, Bogart KH, Koleske D, Allerman AA, Jang JH
1076 - 1083	Topography simulations for contact formation involving reactive ion etching, sputtering and chemical vapor deposition Takagi S, Onoue S, Iyanagi K, Nishitani K, Shinmura T
1084 - 1087	Electron emission from boron nitride films deposited on patterned GaAs substrates Shima H, Funakawa S, Kimura C, Sugino T
1088 - 1095	Technology of polycrystalline diamond thin films for microsystems applications Tang YX, Aslam DM
1096 - 1101	Effect of a surface inhibition layer on line edge roughness Ma YS, Cerrina F
1102 - 1106	Effect of imprinting pressure on residual layer thickness in ultraviolet nanoimprint lithography Lee H
1107 - 1109	Technique for site-specific plan-view transmission electron microscopy of nanostructural electronic devices Bassim ND, Twigg ME
1118 - 1118	An international journal devoted to microelectronics and nanometer structures - Processing, measurement, and phenomena - Preface Gupta J
1119 - 1124	Molecular beam epitaxy growth and characterization of mid-IR type-II "W" diode lasers Canedy CL, Bewley WW, Boishin GI, Kim CS, Vurgaftman I, Kim M
1125 - 1128	Growth of high optical quality InAs quantum dots in InAlGaAs/InP double heterostructures Zhang ZH, Cheng KY
1129 - 1131	High-performance 30-period quantum-dot infrared photodetector Chou ST, Lin SY, Hsiao RS, Chi JY, Wang JS, Wu MC, Chen JF
1132 - 1135	Uniformly doped InAs/GaAs quantum-dot infrared photodetector structures Pal D, Towe E
1136 - 1139	Midinfrared InAs/InGaSb "W" diode lasers with digitally grown tensile-strained AlGaAsSb barriers Li W, Heroux JB, Shao H, Wang WI, Vurgaftman I, Meyer JR
1140 - 1143	Regrown-emitter InP heterojunction bisucpolar transistors Kadow C, Gossard AC, Rodwell MJW
1144 - 1148	Molecular beam epitaxy growth of high quantum efficiency InAs/GaSb superlattice detectors Sullivan GJ, Ikhlassi A, Bergman J, DeWames RE, Waldrop JR, Grein C, Flatte M, Mahalingam K, Yang H, Zhong M, Weimer M
1149 - 1153	Optical properties of (GaSb)(3n)(AlSb)(n) (1 <= n <= 5) superlattices Choi SG, Srivastava SK, Palmstrom CJ, Kim YD, Cooper SL, Aspnes DE
1154 - 1157	Interface roughness characterization by electron mobility of pseudomorphic In0.74Ga0.26As/In0.52Al0.48As modulation-doped quantum wells grown on (411)A InP substrates by molecular beam epitaxy Katoh S, Sagisaka H, Yamamoto M, Watanabe I, Kitada T, Shimomura S, Hiyamizu S
1158 - 1161	Much improved flat interfaces of InGaAs/AlAsSb quantum well structures grown on (411)A InP substrates by molecular-beam epitaxy Imura M, Kurohara H, Masui Y, Asano T, Kitada T, Shimomura S, Hiyamizu S
1162 - 1165	Molecular beam epitaxial growth of AlGaAs/InGaAs/GaAs planar superlattice structures on vicinal (111)B GaAs and their transport properties Akiyama Y, Kawazu T, Noda T, Koshiba S, Torii K, Sakaki H
1166 - 1170	Enhanced strain relaxation rate of InGaAs by adatom-assisted dislocation kink nucleation Lynch C, Chason E, Beresford R
1171 - 1173	Effect of micro-twin defects on InSb quantum wells Mishima TD, Keay JC, Goel N, Ball MA, Chung SJ, Johnson MB, Santos MB
1174 - 1180	Recent developments in surface studies of GaN and AlN Feenstra RM, Dong Y, Lee CD, Northrup JE
1181 - 1185	Impact of unintentional and intentional nitridation of the 6H-SiC(0001)(Si) substrate on GaN epitaxy Kim TH, Choi SJ, Morse M, Wu P, Yi CY, Brown A, Losurdo M, Giangregorio MM, Bruno G
1186 - 1189	Studies of ammonia dissociation during the gas source molecular-beam epitaxial growth of III nitrides Wicks GW, Koch MW, Pedrazzani JR
1190 - 1193	Growth and characterization of plasma-assisted molecular beam epitaxial-grown AlGaN/GaN heterostructures on free-standing hydride vapor phase epitaxy GaN substrates Storm DF, Katzer DS, Mittereder JA, Binari SC, Shanabrook BV, Zhou L, Smith DJ, Xu X, McVey D, Vaudo RP, Brandes GR
1194 - 1198	Influence of AlN nucleation layer on the epitaxy of GaN/AlGaN high electron mobility transistor structure and wafer curvature Torabi A, Hoke WE, Mosca JJ, Siddiqui JJ, Hallock RB, Kennedy TD
1199 - 1203	Ammonia molecular beam epitaxy growth of p-type GaN and application to bipolar junction transistors Haffouz S, Tang H, Bardwell JA, Rolfe S, Hsu EM, Sproule I, Moisa S, Beaulieu M, Webb JB
1204 - 1208	Molecular beam epitaxy of InAlN/GaN heterostructures for high electron mobility transistors Katzer DS, Storm DF, Binari SC, Shanabrook BV, Torabi A, Zhou L, Smith DJ
1209 - 1211	Optical characterization and evaluation of the conduction band offset for ZnCdSe/ZnMgSe quantum wells grown on InP(001) by molecular-beam epitaxy Sohel M, Zhou XC, Lu H, Perez-Paz MN, Tamargo M, Munoz M
1212 - 1216	Effect of beryllium concentration on the size of self-assembled CdSe quantum dots grown on Zn1-xBexSe by molecular-beam epitaxy Zhou X, Tamargo MC, Munoz M, Liu H, Couzis A, Maidarelli C, Huang YS, Malikova L
1217 - 1220	Self-assembled quantum-dot molecules by molecular-beam epitaxy Suraprapapich S, Thainoi S, Kanjanachuchai S, Panyakeow S
1221 - 1225	In situ monitoring of formation of InAs quantum dots and overgrowth by GaAs or AlAs Yakimov M, Tokranov V, Agnello G, van Eisden J, Oktyabrsky S
1226 - 1231	GaAs buffer layer morphology and lateral distributions of InGaAs quantum dots Roshko A, Harvey TE, Lehman SY, Mirin RR, Bertness KA, Hyland BL
1232 - 1235	Site-controlled InAs quantum dots on GaAs patterned using self-organized nano-channel alumina template Meneou K, Tsai CL, Zhang ZH, Cheng KY
1236 - 1239	Single layer and stacked CdSe self-assembled quantum dots with ZnCdMgSe barriers for visible and white light emitters Perez-Paz MN, Zhou XC, Munoz M, Sohel M, Lu H, Fernandez F, Jean-Mary F, Akins DL, Tamargo MC
1240 - 1242	Molecular beam epitaxy growth of novel double-layer InAs quantum dot structures and their optical properties Ohmori M, Kawazu T, Torii K, Sakaki H
1243 - 1246	1.3 mu m InAs quantum dots grown with an As-2 source using molecular-beam epitaxy Sugaya T, Komori K, Yamauchi S, Amano T
1247 - 1251	Growth related interference effects in band edge thermometry of semiconductors Sacks RN, Barlett D, Taylor CA, Williams J
1252 - 1256	Specular reflectance spectroscopy for substrate temperature determination in radio frequency-plasma molecular beam epitaxy of nitride semiconductors Katzer DS, Storm DF, Binari SC, Holm RI, Mahon R, Yang MJ, Freitas JA
1257 - 1261	Inert gas maintenance for molecular-beam epitaxy systems Oye MM, Ahn J, Cao C, Chen H, Fordyce W, Gazula D, Govindaraju S, Hurst JB, Lipson S, Lu D, Reifsnider JM, Shchekin O, Sidhu R, Sun X, Deppe DG, Holmes AL, Mattord TJ
1262 - 1266	Comparative studies of the epireadiness of 4 in. InP substrates for molecular-beam epitaxy growth Fastenau JM, Lubyshev D, Wu Y, Doss C, Liu WK
1267 - 1271	Storage conditions for high-accuracy composition standards of AlGaAs Bertness KA, Roshko A, Asher SE, Perkins CL
1272 - 1276	Molecular beam epitaxy of complex metal-oxides: Where have we come, where are we going, and how are we going to get there? Doolittle WA, Carver AG, Henderson W
1277 - 1280	Electronic properties of ZnO epilayers grown on c-plane sapphire by plasma-assisted molecular beam epitaxy Murphy TE, Chen DY, Cagin E, Phillips JD
1281 - 1285	Electrical characterization for ZnO layers grown on GaN templates by molecular-beam epitaxy Oh DC, Suzuki T, Kim JJ, Makino H, Hanada T, Cho MW, Yao T, Song JS, Ko HJ
1286 - 1290	Selective growth of Zn- and O-polar ZnO layers by plasma-assisted molecular beam epitaxy Minegishi T, Yoo J, Suzuki H, Vashaei Z, Inaba K, Shim K, Yao T
1291 - 1293	Depth profiling the electronic structures at HfO2/Si interface grown by molecular beam epitaxy Lay TS, Chang SC, Din GJ, Yeh CC, Hung WH, Lee WG, Kwo J, Hong M
1294 - 1298	Mn doping and p-type conductivity in zinc-blende GaMnN layers grown by molecular beam epitaxy Novikov SV, Edmonds KW, Zhao LX, Giddings AD, Wang KY, Campion RP, Staddon CR, Fay MW, Han Y, Brown PD, Sawicki M, Gallagher BL, Foxon CT
1299 - 1303	Molecular beam epitaxial growth of Fe(Si1-xGex)(2) epilayers Cottier RJ, Amir FZ, Hossain K, House JB, Gorman BP, Perez JM, Holland OW, Golding TD, Stokes DW
1304 - 1307	Molecular-beam epitaxial growth and characterization of (In0.5Al0.5)(1-x)MnxAs-(In0.5Ga0.5)(1-x)MnxAs: Thin films and superlattices Maksimov O, Sheu BL, Schiffer P, Samarth N
1308 - 1312	Structure and magnetic properties of Cr-doped GaN Kim JJ, Makino H, Sakurai M, Oh DC, Hanada T, Cho MW, Yao T, Emura S, Kobayashi K
1313 - 1316	Dielectric functions of molecular-beam-epitaxy-grown Ga1-xMnxAs thin films Weber ZJ, Peiris FC, Liu X, Furdyna JK
1317 - 1319	Gas-source molecular-beam epitaxial growth of Ga(In)NP on GaP(100) substrates for yellow-amber light-emitting devices Odnoblyudov VA, Yu CW
1320 - 1323	Effects of antimony and ion damage on carrier localization in molecular-beam-epitaxy-grown GaInNAs Bank SR, Wistey MA, Yuen HB, Lordi V, Gambin VF, Harris JS
1324 - 1327	Protecting wafer surface during plasma ignition using an arsenic cap Wistey MA, Bank SR, Yuen HB, Goddard LL, Gugov T, Harris JS
1328 - 1332	Investigation of nitrogen flow variation into a radio frequency plasma cell on plasma properties and GaInNAs grown by molecular beam epitaxy Yuen HB, Wistey MA, Bank SR, Bae H, Harris JS
1333 - 1336	Formation of atomic hydrogen during radio frequency nitrogen plasma assisted chemical beam epitaxy of III-V dilute nitrides Fotkatzikis A, Pinault MA, Coaquira JAH, Freundlich A
1337 - 1340	Molecular-beam epitaxy growth of low-threshold cw GaInNAsSb lasers at 1.5 mu m Bank SR, Wistey MA, Yuen HB, Goddard LL, Bae H, Harris JS
1341 - 1344	GaNAs(001) surface phases under growing condition Mori T, Morimura T, Hanada T, Yao T