Journal of Vacuum Science & Technology B

Journal of Vacuum Science & Technology B, Vol.26, No.3 Entire volume, number list

ISSN: 1071-1023 (Print)

In this Issue (61 articles)

901 - 903	Microscopic investigation of the CdS buffer layer growth on Cu(In,Ga)Se-2 absorbers Sadewasser S, Bremsteller W, Plake T, Kaufmann CA, Pettenkofer C
904 - 908	Statistical representation of intrinsic electronic tunneling characteristics through alkyl self-assembled monolayers in nanowell device structures Song H, Lee T, Choi NJ, Lee H
909 - 913	Effect of substrate temperature on structural and electrical properties of liquid-delivery metal organic chemical vapor deposited indium oxide thin films on silicon Venkat S, Pammi N, Sahu BS, Seong NJ, Yoon SG
914 - 917	Controllable fabrication of the micropore shape of two-dimensional photonic crystals using holographic lithography Hsieh ML, Lan YS
918 - 926	Microelectromechanical system microhotplates for reliability testing of thin films and nanowires Aceros JC, McGruer NE, Adams GG
927 - 933	Field emission for cantilever sensors Yang CK, le Febre AJ, Pandraud G, van der Drift E, French PJ
934 - 938	Ion beam machining of Si layer deposited on Zerodur (R) substrate Kurashima Y, Tajima T, Miyamoto I, Ando M, Numata A
939 - 944	Electron beam induced deposition of iron nanostructures Hochleitner G, Wanzenboeck HD, Bertagnolli E
945 - 948	Resistivity and surface states density of n- and p-type silicon nanowires Vaurette F, Nys JP, Deresmes D, Grandidier B, Stievenard D
949 - 955	Probe current, probe size, and the practical brightness for probe forming systems Bronsgeest MS, Barth JE, Swanson LW, Kruit P
956 - 958	Influence of As-stabilized surface on the formation of InAs/GaAs quantum dots Tseng CC, Chou ST, Chen YH, Chung TH, Lin SY, Wu MC
959 - 962	Stable room temperature deposited amorphous InGaZnO4 thin film transistors Lim W, Kim SH, Wang YL, Lee JW, Norton DP, Pearton SJ, Ren F, Kravchenko II
963 - 967	Inhibiting spontaneous etching of nanoscale electron beam induced etching features: Solutions for nanoscale repair of extreme ultraviolet lithography masks Lassiter MG, Liang T, Rack PD
968 - 972	Dependence of Zn1-xMgxO : P film properties on magnesium concentration Kim HS, Lugo F, Pearton SJ, Norton DP, Ren F
973 - 977	Fabrication of three-dimensional nanostructures by focused ion beam milling Tjerkstra RW, Segerink FB, Kelly JJ, Vos WL
978 - 982	Conformal metal oxide coatings on nanotubes by direct low temperature metal-organic pyrolysis in supercritical carbon dioxide Peng Q, Spagnola JC, Daisuke H, Park KJ, Parsons GN
983 - 989	Field emission properties of individual zinc oxide nanowire field emitter Yeong KS, Thong JTL
990 - 994	Effects of laterally overgrown n-GaN thickness on defect and deep level concentrations Polyakov AY, Smirnov NB, Govorkov AV, Markov AV, Yakimov EB, Vergeles PS, Lee IH, Lee CR, Pearton SJ
995 - 1000	Nitrogen and hydrogen plasma treatments of multiwalled carbon nanotubes Jones JG, Waite AR, Muratore C, Voevodin AA
1001 - 1005	Potential of pulsed electron-beam deposition for nanomaterial fabrication: Spatial distribution of deposited materials Steigerwald A, Mu R
1006 - 1010	Insights into the electron-field emission mechanism from nanostructured carbons: A multistep phenomenon and modeling Gupta S
1011 - 1020	Linewidth roughness transfer measured by critical dimension atomic force microscopy during plasma patterning of polysilicon gate transistors Pargon E, Martin M, Thiault J, Joubert O, Foucher J, Lill T
1021 - 1024	Field emission properties of ZnO nanorods coated with NiO film Yang JH, Lee SY, Song WS, Shin YS, Park CY, Kim HJ, Cho W, An KS
1025 - 1029	Observation and control of electrochemical etching effects in the fabrication of InAs/AlSb/GaSb heterostructure devices Su N, Tang Y, Zhang Z, Kuech TF, Fay P
1030 - 1032	Performance improvement of CuOx with gradual oxygen concentration for nonvolatile memory application Zhou P, Lv HB, Yin M, Tang L, Song YL, Tang TA, Lin YY, Bao A, Wu A, Cai S, Wu H, Liang C, Chi MH
1033 - 1037	Fully sealed carbon nanotube flat-panel light source and its application as thin film transistor-liquid-crystal display backlight Zhang Y, Deng SZ, Xu NS, Chen J
1038 - 1040	Field-emission cascades prepared by boron nitride cluster beam deposition Song FQ, Zhou F, Han M, Wan JG, Liu ZW, Zhou JF, Wang GH
1049 - 1052	Molecular beam epitaxy III-nitride growth for polarization sensitive devices based on M-plane films with in situ real time analysis by spectroscopic ellipsometry Boney C, Misra P, Pillai R, Starikov D, Bensaoula A
1053 - 1057	Effects of bismuth on wide-depletion-width GaInNAs solar cells Ptak AJ, France R, Jiang CS, Reedy RC
1058 - 1063	Role of ion damage on unintentional Ca incorporation during the plasma-assisted molecular-beam epitaxy growth of dilute nitrides using N-2/Ar source gas mixtures Oye MM, Bank SR, Ptak AJ, Reedy RC, Goorsky MS, Holmes AL
1064 - 1067	Growth and structural characteristics of GaN/AlN/nanothick gamma-Al2O3/Si (111) Lee WC, Lee YJ, Tung LT, Wu SY, Lee CH, Hong M, Ng HM, Kwo J, Hsu CH
1068 - 1073	Real-time mass spectroscopy of reflected fluxes during molecular beam epitaxy growth of HgCdTe Sewell RH, Dell JM, Faraone L
1074 - 1077	In situ molecular beam epitaxial growth of SiN films using a source port compatible electron-gun for silicon evaporation Hoke WE, Kennedy TD, Torabi A, Vandermeulen KY, Mosca JJ
1078 - 1080	High electron mobility InAs0.8Sb0.2 grown on InP substrates by gas source molecular beam epitaxy Liao CC, Wu BR, Hsieh KC, Cheng KY
1081 - 1083	Quantitative mobility spectrum analysis of carriers in GaSb/InAs/GaSb superlattice Rao TVC, Antoszewski J, Rodriguez JB, Plis E, Krishna S, Faraone L
1084 - 1088	In(Ga, Al)As quantum dot/wire growth on InP Tzeng TE, Feng DJY, Chen CY, Lay TS
1089 - 1092	Temperature dependence of photoluminescence oxygen-related deep levels in Al0.2Ga0.3In0.5P : Be grown by solid source molecular beam epitaxy Soubervielle-Montalvo C, Mishoumyi V, Hernandez IC, Mendez-Garcia VH
1093 - 1096	Molecular beam epitaxy growth of AlGaAs on the (631)-oriented GaAs substrates Mendez-Garcia VH, Ramirez-Elias MG, Gorbatchev A, Cruz-Hernandez E, Rojas-Ramirez JS, Martinez-Velis I, Zamora-Peredo L, Lopez-Lopez M
1097 - 1099	Direct electron beam patterning and molecular beam epitaxy growth of InAs: Site definition of quantum dots Yokota H, Tsunashima K, Iizuka K, Okamoto H
1100 - 1104	Improved quantum confinement of self-assembled high-density InAs quantum dot molecules in AlGaAs/GaAs quantum well structures by molecular beam epitaxy Swe NC, Tangmattajittakul O, Suraprapapich S, Changmoang P, Thainoi S, Wissawinthanon C, Kanjanachuchai S, Ratanathammaphan S, Panyakeow S
1105 - 1109	Selective growth of CdTe on patterned CdTe/Si(211) Seldrum T, Bommena R, Samain L, Dumont J, Sivananthan S, Sporken R
1110 - 1114	Improved epitaxy of barium titanate by molecular beam epitaxy through a single crystalline magnesium oxide template for integration on hexagonal silicon carbide Goodrich TL, Cai Z, Losego MD, Maria JP, Kourkoutis LF, Muller DA, Ziemer KS
1115 - 1119	Molecular beam epitaxy growth of metamorphic high electron mobility transistors and metamorphic heterojunction bipolar transistors on Ge and Ge-on-insulator/Si substrates Lubyshev D, Fastenau JM, Wu Y, Liu WK, Bulsara MT, Fitzgerald EA, Hoke WE
1120 - 1123	Fabrication of periodically polarity-inverted ZnO films Minegishi T, Ishizawa A, Kim J, Kim D, Ahn S, Park S, Park J, Im I, Oh DC, Nakano H, Fujii K, Jeon H, Yao T
1124 - 1127	High-quality nanothick single-crystal Y2O3 films epitaxially grown on Si (111): Growth and structural characteristics Lee YJ, Lee WC, Nieh CW, Yang ZK, Kortan AR, Hong M, Kwo J, Hsu CH
1128 - 1131	Molecular beam epitaxy grown Ga2O3(Gd2O3) high kappa dielectrics for germanium passivation-x-ray photoelectron spectroscopy and electrical characteristics Lee CH, Lin TD, Tung LT, Huang ML, Hong M, Kwo J
1132 - 1135	Oxide scalability in Al2O3/Ga2O3(Gd2O3)/In0.20Ga0.80As/GaAs heterostructures Shiu KH, Chiang CH, Lee YJ, Lee WC, Chang P, Tung LT, Hong M, Kwo J, Tsai W
1136 - 1139	Low-strain InAs/InGaAs/GaAs quantum dots-in-a-well infrared photodetector Shenoi RV, Attaluri RS, Siroya A, Shao J, Sharma YD, Stintz A, Vandervelde TE, Krishna S
1140 - 1144	Tailoring detection wavelength of InGaAs quantum wire infrared photodetector Tsai CL, Cheng KY, Chou ST, Lin SY, Xu C, Hsieh KC
1145 - 1148	nBn detectors based on InAs/GaSb type-II strain layer superlattice Bishop G, Plis E, Rodriguez JB, Sharma YD, Kim HS, Dawson LR, Krishna S
1149 - 1152	Growth and characterization of GaAs1-xSbx barrier layers for advanced concept solar cells Bremner SP, Liu GM, Faleev N, Ghosh K, Honsberg CB
1153 - 1156	Molecular beam epitaxial growth and characteristics of 1.52 mu m metamorphic InAs quantum dot lasers on GaAs Mi Z, Wu C, Yang J, Bhattacharya P
1157 - 1159	InGaAsP/InP buried-heterostructure laser diodes grown on InP using molecular beam epitaxy and metal-organic chemical vapor deposition Pickrell GW, Zhang HL, Ren HW, Zhang D, Xue Q, Anselm KA, Hwang WY
1160 - 1162	High-power, narrow-ridge, mid-infrared interband cascade lasers Canedy CL, Kim CS, Kim M, Larrabee DC, Nolde JA, Bewley WW, Vurgaftman I, Meyer JR
1163 - 1166	InGaAlAs/InGaAs strain-balanced multi-quantum-well laser/semiconductor optical amplifiers operating at excited transitions Feng DJY, Chiu CL, Lin SH, Lay TS, Chang TY
1167 - 1170	Manufacturing of laser diodes grown by molecular beam epitaxy for coarse wavelength division multiplexing systems Anselm KA, Hwang WY, Ren HW, Zhang D, Um J
1171 - 1173	Growth and characterization of ZnxCd1-xSe/Znx' Cdy' Mg1-x'-y' Se asymmetric coupled quantum well structures for quantum cascade laser applications Charles WO, Shen A, Franz K, Gmachl C, Zhang Q, Gong Y, Neumark GF, Tamargo MC
1174 - 1177	Designing high electron mobility transistor heterostructures with quantum dots for efficient, number-resolving photon detection Rowe MA, Gansen EJ, Greene MB, Rosenberg D, Harvey TE, Su MY, Hadfield RH, Nam SW, Mirin RP
1178 - 1181	Si metal-oxide-semiconductor devices with high kappa HfO2 fabricated using a novel MBE template approach followed by atomic layer deposition Pan CH, Kwo J, Lee KY, Lee WC, Chu LK, Huang ML, Lee YJ, Hong M
1182 - 1186	Fabrication and characterization of metal-oxide-semiconductor GaAs capacitors on Ge/Si1-xGex/Si substrates with Al2O3 gate dielectric Shahrjerdi D, Nuntawong N, Balakrishnan G, Garcia-Gutierrez DI, Khoshakhlagh A, Tutuc E, Huffaker D, Lee JC, Banerjee SK
1187 - 1190	Molecular beam epitaxy growth of InAs and In0.8Ga0.2As channel materials on GaAs substrate for metal oxide semiconductor field effect transistor applications Li N, Harmon ES, Salzman DB, Zakharov DN, Jeon JH, Stach E, Woodall JM, Wang XW, Ma TP, Walker F