Journal of Vacuum Science & Technology B

Journal of Vacuum Science & Technology B, Vol.14, No.4 Entire volume, number list

ISSN: 1071-1023 (Print)

In this Issue (131 articles)

2399 - 2402	Single-Electron Charging of a Molecule Observed in Scanning Tunneling Scattering Experiments Nejo H, Aono M, Baksheyev DG, Tkachenko VA
2403 - 2406	Current Characteristics in Near-Field Emission Scanning Tunneling Microscopes Mesa G, Saenz JJ, Garcia R
2407 - 2416	Morphological Modeling of Atomic-Force Microscopy Imaging Including Nanostructure Probes and Fibrinogen Molecules Wilson DL, Dalal P, Kump KS, Benard W, Xue P, Marchant RE, Eppell SJ
2417 - 2423	Scanning Scattering Microscope for Surface Microtopography and Defect Imaging Lorincik J, Marton D, King RL, Fine J
2424 - 2427	Scanning Tunneling Microscope Study of Defect Structures on as-Terminated Si(001) Surfaces Jackson MD, Leibsle FM, Cole RJ, Gregory DA, Woolf DA, Weightman P
2428 - 2431	Simultaneous Imaging of Si(111) 7X7 with Atomic-Resolution in Scanning-Tunneling-Microscopy, Atomic-Force Microscopy, and Atomic-Force Microscopy Noncontact Mode Guthner P
2432 - 2437	Structure Imaging by Atomic-Force Microscopy and Transmission Electron-Microscopy of Different Light-Emitting Species of Porous Silicon Sassaki RM, Douglas RA, Kleinke MU, Teschke O
2438 - 2444	Field-Emission Characteristics of the Scanning Tunneling Microscope for Nanolithography Mayer TM, Adams DP, Marder BM
2445 - 2455	Proximity Effect Correction for Nanolithography Rau R, Mcclellan JH, Drabik TJ
2456 - 2461	Independent Parallel Lithography Using the Atomic-Force Microscope Minne SC, Manalis SR, Atalar A, Quate CF
2462 - 2466	Monte-Carlo Simulation of Inclined Incidence of Fast Electrons to Solids Gueorguiev YM, Mladenov GM, Ivanov DI
2467 - 2473	Generation Mechanism of Distortion Aberration in a Symmetrical Magnetic Doublet for an Electron-Beam Projection System Nakasuji M, Shimizu H
2474 - 2484	Reticle Fabrication by High Acceleration Voltage Electron-Beam - Representative Figure Method for Proximity Effect Correction .6. Abe T
2485 - 2492	Surface-Tension, Adhesion and Wetting of Materials for Photolithographic Process Bauer J, Drescher G, Illig M
2493 - 2499	Polysilicon Gate Etching in High-Density Plasmas .3. X-Ray Photoelectron-Spectroscopy Investigation of Sidewall Passivation of Silicon Trenches Using an Oxide Hard Mask Bell FH, Joubert O
2500 - 2504	Influence of Patterning in Silicon Quantum-Well Structures on Photoluminescence Namatsu H, Furuta T, Nagase M, Kurihara K, Iwadate K, Murase K, Makino T
2505 - 2509	Computer-Simulations of Porous Silicon Formation Weng YM, Qiu JY, Zhou YH, Zong XF
2510 - 2518	Comparison of Advanced Plasma Sources for Etching Applications .5. Polysilicon Etching Rate, Uniformity, Profile Control, and Bulk Plasma Properties in a Helical Resonator Plasma Source Lee JT, Layadi N, Guinn KV, Maynard HL, Klemens FP, Ibbotson DE, Tepermeister I, Egan PO, Richardson RA
2519 - 2523	Surface Morphologies for Br-Etched Si(100)-2X1 - Kinetics of Pit Growth and Step Retreat Williams FJ, Aldao CM, Weaver JH
2524 - 2530	Deep-Etch Silicon Millimeter Wave-Guide Structure for Electron Acceleration Willke TL, Feinerman AD
2531 - 2536	Minimized Response-Time of Optical-Emission and Mass-Spectrometric Signals for Optimized End-Point Detection Thomas S, Chen HH, Hanish CK, Grizzle JW, Pang SW
2537 - 2542	Reactive Ion Etching of Sloped Sidewalls for Surface-Emitting Structures Using a Shadow Mask Technique Jacobs B, Zengerle R
2543 - 2549	Comparison of the Physical and Electrical-Properties of Electron-Cyclotron-Resonance and Distributed Electron-Cyclotron-Resonance SiO2 Firon M, Hugon MC, Agius B, Hu YZ, Wang Y, Irene EA
2550 - 2554	Reactive-Ion Etching of WSix in Cf4+o-2 and the Associated Damage in GaAs Chan YJ, Su CS, Sung KT
2555 - 2566	Characterization of Electrical Damage-Induced by CH4/H-2 Reactive Ion Etching of Molecular-Beam Epitaxial InAlAs Achouche M, Clei A, Harmand JC
2567 - 2573	Cl-2/Ar Plasma-Etching of Binary, Ternary, and Quaternary in-Based Compound Semiconductors Lee JW, Hong J, Abernathy CR, Lambers ES, Pearton SJ, Hobson WS, Ren F
2574 - 2581	Metal Stack Etching Using a Helical Resonator Plasma Labelle CB, Maynard HL, Lee JT
2582 - 2587	Microstructural Stability of Ohmic Contacts to InxGa1-Xn Durbha A, Pearton SJ, Abernathy CR, Lee JW, Holloway PH, Ren F
2588 - 2594	Patterned Eutectic Bonding with Al/Ge Thin-Films for Microelectromechanical Systems Vu B, Zavracky PM
2595 - 2602	Simulation of 3-Dimensional Refractory-Metal Step Coverage over Contact Cuts and Vias Sheergar MK, Smy T, Dew SK, Brett MJ
2603 - 2608	Liner Conformality in Ionized Magnetron Sputter Metal-Deposition Processes Hamaguchi S, Rossnagel SM
2609 - 2614	High-Vacuum Versus Environmental Electron-Beam Deposition Folch A, Servat J, Esteve J, Tejada J, Seco M
2615 - 2622	Simulations of Metal Thin-Film Thermal Flow Processes Liao H, Cale TS
2623 - 2626	Nonlinear-Analysis of the I-V Characteristics in Ti/Si and TiSi2/Si Schottky Diodes Perezrigueiro J, Jimenez C, Perezcasero R, Martinezduart JM
2627 - 2635	The Effect of the Ti Glue Layer in an Integrated Ti/Tin/Ti/Alsicu/Tin Contact Metallization Process Ouellet L, Tremblay Y, Gagnon G, Caron M, Currie JF, Gujrathi SC, Biberger M
2636 - 2644	Effects of Oxide Overlayer on Thermal-Stress and Yield Behavior of Al-Alloy Films Yeo IS, Anderson SG, Jawarani D, Ho PS, Clarke AP, Saimoto S, Ramaswami S, Cheung R
2645 - 2655	Effects of Insulator Surface-Roughness on Al-Alloy Film Properties and Electromigration Performance in Al-Alloy Ti Insulator Layered Interconnects Onoda H, Narita T, Touchi K, Hashimoto K
2656 - 2659	Gap Fill Dependence of Fluorinated Polyimide Films on Solid Content, Adhesion Promoter, Spin Dwell Time, and Solvent Spray Wang SQ, Zhao B
2660 - 2666	Characterization of the Si/SiO2 Interface Formed by Remote Plasma-Enhanced Chemical-Vapor-Deposition from SiH4/N2O with or Without Chlorine Addition Park YB, Li XD, Rhee SW
2667 - 2673	Oxide-Growth on Silicon (100) in the Plasma Phase of Dry Oxygen Using an Electron-Cyclotron-Resonance Source Kim K, An MH, Shin YG, Suh MS, Youn CJ, Lee YH, Lee KB, Lee HJ
2674 - 2683	Gate Quality Si3N4 Prepared by Low-Temperature Remote Plasma-Enhanced Chemical-Vapor-Deposition for III-V Semiconductor-Based Metal-Insulator-Semiconductor Devices Park DG, Tao M, Li D, Botchkarev AE, Fan Z, Wang Z, Mohammad SN, Rockett A, Abelson JR, Morkoc H, Heyd AR, Alterovitz SA
2684 - 2689	B/Si(100) Surface - Atomic-Structure and Epitaxial Si Overgrowth Zhang Z, Kulakov MA, Bullemer B, Eisele I, Zotov AV
2690 - 2692	High Phosphorus Doping of Epitaxial Silicon at Low-Temperature and Very-Low Pressure Huang XD, Han P, Chen H, Zheng YD, Hu LQ, Wang RH, Zhu SM, Feng D
2693 - 2700	Characterization by X-Ray Photoelectron-Spectroscopy of the Chemical-Structure of Semiinsulating Polycrystalline Silicon Thin-Films Iacona F, Lombardo S, Campisano SU
2701 - 2706	Inherent Possibilities and Restrictions of Plasma Immersion Ion-Implantation Systems Mandl S, Brutscher J, Gunzel R, Moller W
2707 - 2711	X-Ray Photoelectron-Spectroscopy Study on Native Oxidation of as-Implanted Si (100) Yano F, Hiraoka A, Itoga T, Matsubara A, Kojima H, Kanehori K, Mitsui Y
2712 - 2724	Quantification of Metal Trace Contaminants on Si Wafer Surfaces by Laser-SNMS and ToF-SIMS Using Sputter-Deposited Submonolayer Standards Schnieders A, Mollers R, Terhorst M, Cramer HG, Niehuis E, Benninghoven A
2725 - 2730	Phonon-Scattering in Novel Superlattice-Asymmetric Double-Barrier Resonant-Tunneling Structure Banoo K, Danielsrace T, Wallis CR, Teitsworth SW
2731 - 2738	Facet Generation During Molecular-Beam Epitaxy of GaAs/AlGaAs Multilayers on GaAs (001) Patterned Substrates Takebe T, Fujii M, Yamamoto T, Fujita K, Watanabe T
2739 - 2741	InP/InGaAs Single-Heterojunction Bipolar-Transistors Grown by Solid-Source Molecular-Beam Epitaxy Using a Phosphorus Valved Cracker Chen WL, Chin TP, Woodall JM, Haddad GI
2742 - 2752	Chemistry of Arsenic Incorporation During GaAs/GaAs(100) Molecular-Beam Epitaxy Probed by Simultaneous Laser Flux Monitoring and Reflection High-Energy Electron-Diffraction Ott AK, Casey SM, Alstrin AL, Leone SR
2753 - 2756	Solid Source Molecular-Beam Epitaxy of Low-Threshold 1.55 Mu-M Wavelength GaInAs/GaInAsP/InP Semiconductor-Lasers Johnson FG, King O, Seiferth F, Stone DR, Whaley RD, Dagenais M, Chen YJ
2757 - 2760	Molecular-Beam Epitaxy-Grown ZnSe Studied by Reflectance Anisotropy Spectroscopy and Reflection High-Energy Electron-Diffraction Zettler JT, Stahrenberg K, Richter W, Wenisch H, Jobst B, Hommel D
2761 - 2766	Solvent Effect on the Properties of Sulfur Passivated GaAs Bessolov VN, Konenkova EV, Lebedev MV
2767 - 2769	Silicon Dioxide Chemical-Vapor-Deposition Using Silane and Hydrogen-Peroxide Gaillard F, Brault P, Brouquet P
2770 - 2771	Analytical Method of Gigabit Trench Doping Uniformity by Secondary-Ion Mass-Spectrometry Matsuo N, Tsukamoto K, Miyoshi T
2772 - 2772	Measurement of Interfacial Shear (Friction) with an Ultrahigh-Vacuum Atomic-Force Microscope (Vol 14, Pg 1289, 1996) Carpick RW, Agrait N, Ogletree DF, Salmeron M
2774 - 2774	Papers from the 23rd Annual Conference on the Physics and Chemistry of Semiconductor Interfaces - 21-25 January 1996 - Scripps-Institute-of-Oceanography - La-Jolla, California - Preface Aspnes DE
2776 - 2779	Effect of Dislocations in Strained Si/SiGe on Electron-Mobility Ismail K
2780 - 2785	Quantum Transport - Silicon Inversion-Layers and InAlAs-InGaAs Heterostructures Vasileska D, Eldridge T, Ferry DK
2786 - 2789	Ballistic-Electron-Emission Microscopy of Au-InAs-GaAs System Ke ML, Westwood DI, Matthai CC, Richardson BE, Williams RH
2790 - 2793	Interface Roughness Effects on Transport in Tunnel Structures Ting DZ, Mcgill TC
2794 - 2798	Electron-Transport at Au/InP Interface with Nanoscopic Exclusions Anand S, Carlsson SB, Deppert K, Montelius L, Samuelson L
2799 - 2808	Relaxation of the Step Profile for Different Microscopic Mechanisms Liu DJ, Fu ES, Johnson MD, Weeks JD, Williams ED
2809 - 2811	First-Principles Study of Si 2P Core-Level Shifts at Water and Hydrogen Covered Si(001)2X1 Surfaces Pasquarello A, Hybertsen MS, Car R
2812 - 2816	New Approach to Preparing Smooth Si(100) Surfaces - Characterization by Spectroellipsometry and Validation of Si/SiO2 Interfaces Properties in Metal-Oxide-Semiconductor Devices Schmidt D, Niimi H, Hinds BJ, Aspnes DE, Lucovsky G
2817 - 2823	Schwoebel Barriers on Si(111) Steps and Kinks Kodiyalam S, Khor KE, Dassarma S
2824 - 2831	An Inquiry Concerning the Principles of Si 2P Core-Level Photoemission Shift Assignments at the Si/SiO2 Interface Mcfeely FR, Zhang KZ, Holl MM, Lee SH, Bender JE
2832 - 2839	Defect Properties of Si-Atoms, O-Atoms, N-Atoms, and H-Atoms at Si-SiO2 Interfaces Lucovsky G, Jing Z, Lee DR
2840 - 2844	Oxidation of Silicon (100) - Experimental-Data Versus a Unified Chemical-Model Thanikasalam P, Whidden TK, Ferry DK
2845 - 2849	Kinetics of Field-Induced Oxidation of Hydrogen-Terminated Si(111) by Means of a Scanning Force Microscope Ley L, Teuschler T, Mahr K, Miyazaki S, Hundhausen M
2850 - 2854	Photoinduced Surface-Reactions of Reverse-Biased N-Type Porous Si Lee EJ, Bitner TW, Hall AP, Sailor MJ
2855 - 2863	Stressing and High-Field Transport Studies on Device-Grade SiO2 by Ballistic-Electron-Emission Spectroscopy Ludeke R, Wen HJ, Cartier E
2864 - 2871	Ballistic-Electron-Emission Microscopy Studies of Charge Trapping in SiO2 Kaczer B, Pelz JP
2872 - 2881	Contactless Capacitance-Voltage and Photoluminescence Characterization of Ultrathin Oxide-Silicon Interfaces Formed on Hydrogen-Terminated (111) Surfaces Hashizume T, Koyanagi S, Hasegawa H
2882 - 2887	Rapid Thermal N2O Oxynitride an Si(100) Lu ZH, Hussey RJ, Graham MJ, Cao R, Tay SP
2888 - 2894	Surface Passivation of In0.53Ga0.47As Ridge Quantum Wires Using Silicon Interface Control Layers Fujikura H, Kodama S, Hashizume T, Hasegawa H
2895 - 2900	Structure of the Sinx/GaAs (110) Interface Modified with Ultrathin Si and Sulfur Passivation Huang LJ, Lau WM, Tang HT, Lennard WN, Mitchell IV, Landheer D, Baribeau JM, Ingrey S
2901 - 2908	Structural and Electronic-Properties of Sb Islands on GaAs (110) Magri R, Manghi F, Calandra C
2909 - 2913	Room-Temperature Chlorination of as-Rich GaAs (110) Simpson WC, Shuh DK, Yarmoff JA
2914 - 2917	Interaction of Hydrogen-Ions with Oxidized GaAs(100) and AlAs(100) Surfaces Chang YL, Cao R, Spicer WE, Pianetta P, Shi S, Hu E, Merz J
2918 - 2921	InxGa1-xAs/in(Y)Ga(1-Y)as(Z)P(1-Z) Heterostructures Grown by Gas-Source Molecular-Beam Epitaxy Bi WG, Tu CW
2922 - 2935	Effect of Interface Defect Formation on Carrier Diffusion and Luminescence in In0.2Ga0.8As/AlxGa1-xAs Quantum-Wells Rich DH, Rammohan K, Lin HT, Tang Y, Meshkinpour M, Goorsky MS
2936 - 2939	Role of Structural and Chemical Contributions to Valence-Band Offsets at Strained-Layer Heterojunctions - The GaAs/Gap (001) Case Diventra M, Peressi M, Baldereschi A
2940 - 2943	Atomic-Scale Structure of InAs/Inas1-xSbx Superlattices Grown by Modulated Molecular-Beam Epitaxy Lew AY, Yu ET, Zhang YH
2944 - 2947	Evidence for the Occupation of DX Centers in in(0.29)Al(0.71)as Young AP, Wieder HH
2948 - 2951	Microscopic Processes During Electron-Cyclotron-Resonance Microwave Nitrogen Plasma-Assisted Molecular-Beam Epitaxial-Growth of GaN/GaAs Heterostructures - Experiments and Kinetic Modeling Bandic ZZ, Mcgill TC, Hauenstein RJ, Osteen ML
2952 - 2956	Tensile Strain Relaxation in Ganxp1-X (X-Less-Than-or-Equal-to-0.1) Grown by Chemical Beam Epitaxy Li NY, Wong WS, Tomich DH, Kavanagh KL, Tu CW
2957 - 2960	Nickel Doping of Boron-Carbide Grown by Plasma-Enhanced Chemical-Vapor-Deposition Hwang SD, Remmes NB, Dowben PA, Mcilroy DN
2961 - 2966	Evolution of Deep Levels and Internal Photoemission with Annealing Temperature at ZnSe/GaAs Interfaces Yang X, Brillson LJ, Raisanen AD, Vanzetti L, Bonanni A, Franciosi A, Grundmann M, Bimberg D
2967 - 2972	Interfacial Chemical-Bonds, Reactions, and Band Alignment in ZnSe/GaAs(001) Heterojunctions Bratina G, Ozzello T, Franciosi A
2973 - 2979	Interface States of ZnSe/GaAs Interface Yang Z, Sou IK, Yeung YH, Wong GK, Wang J, Jin CX, Hou XY
2980 - 2984	Zn Preadsorption on GaAs(100)2X4 Prior to ZnSe Growth Heun S, Paggel JJ, Rubini S, Franciosi A
2985 - 2993	Electronic-Properties of Ideal and Interface-Modified Metal-Semiconductor Interfaces Monch W
2994 - 2999	Tunable Schottky Barriers and the Nature of Si Interface Layers in Al/GaAs(001) Diodes Sorba L, Paggel JJ, Franciosi A
3000 - 3007	Schottky-Barrier Tuning at Al/GaAs(100) Junctions Berthod C, Bardi J, Binggeli N, Baldereschi A
3008 - 3012	Near-Surface Dopant Passivation After Wet-Chemical Preparation of Si(111)H Surfaces Ley L, Ristein J, Schafer J, Miyazaki S
3013 - 3018	Correlation Between Surface-Structure and Ordering in GaInP Murata H, Lee SH, Ho IH, Stringfellow GB
3019 - 3029	Heteroepitaxy of Gap on Si(100) Bachmann KJ, Rossow U, Sukidi N, Castleberry H, Dietz N
3030 - 3034	Characterization of Si/Si1-Ycy Superlattices Grown by Surfactant Assisted Molecular-Beam Epitaxy Pettersson PO, Ahn CC, Mcgill TC, Croke ET, Hunter AT
3035 - 3039	Modulation-Doped In0.53Ga0.47As/In0.52Al0.48As Heterostructures Grown on GaAs Substrates Using Step-Graded InxGa1-xAs Buffers Goldman RS, Kavanagh KL, Wieder HH
3040 - 3046	Optical Investigations of Surface Processes in Gap Heteroepitaxy on Silicon Under Pulsed Chemical Beam Epitaxy Conditions Rossow U, Dietz N, Bachmann KJ, Aspnes DE
3047 - 3051	Implications of Excess Strain in as Compound/P Compound III-V Multilayer Superlattices Grown by Metal-Organic Vapor-Phase Epitaxy Clawson AR, Hanson CM
3052 - 3057	Situ Characterization of ZnSe/GaAs(100) Interfaces by Reflectance Difference Spectroscopy Yasuda T, Kuo LH, Kimura K, Miwa S, Jin CG, Tanaka K, Yao T
3058 - 3064	Optical Monitoring of the Development of InAs Quantum Dots on GaAs(001) by Reflectance Anisotropy Spectroscopy Steimetz E, Zettler JT, Richter W, Westwood DI, Woolf DA, Sobiesierski Z
3065 - 3069	Reflectance Anisotropy Spectroscopy Study of GaAs Overlayer Growth on Submonolayer Coverages of Si on the GaAs(001)-C(4X4) Surface Sobiesierski Z, Westwood DI, Woolf DA
3070 - 3074	Interpretation of Surface-Induced Optical Anisotropy of Clean, Hydrogenated, and Oxidized Vicinal Silicon Surfaces Investigated by Reflectance-Difference Spectroscopy Rossow U, Mantese L, Aspnes DE
3075 - 3079	Ab-Initio Calculations of the Reflectance Anisotropy Spectrum of the GaAs(001) C(4X4) Surface Bass JM, Matthai CC
3080 - 3088	Anisotropic Optical Reflection by Stepped Surfaces Deboeij PL, Wijers CM, Zoethout E
3089 - 3094	Reflection Anisotropy Spectroscopy, Surface Photovoltage Spectroscopy, and Contactless Electroreflectance Investigation of the InP/In0.53Ga0.47As(001)Heterojunction System Leibovitch M, Ram P, Malikova L, Pollak FH, Freeouf JL, Kronik L, Mishori B, Shapira Y, Clawson AR, Hanson CM
3095 - 3106	Physics and Chemistry of Silicon-Wafer Bonding Investigated by Infrared-Absorption Spectroscopy Weldon MK, Chabal YJ, Hamann DR, Christman SB, Chaban EE, Feldman LC
3107 - 3112	Nonlinear-Optical Spectroscopy of Si-Heterostructure Interfaces Meyer C, Lupke G, Lu ZG, Golz A, Kurz H, Lucovsky G
3113 - 3116	Spatial-Mapping of Ordered and Disordered Domains of GaInP by Near-Field Scanning Optical Microscopy and Scanning Capacitance Microscopy Leong JK, Mcmurray J, Williams CC, Stringfellow GB
3118 - 3118	Preface Jonker B
3119 - 3125	X-Ray Magnetic Microscopy and Spectroscopy Using a 3rd-Generation Synchrotron-Radiation Source Young AT, Padmore HA, Smith NV
3126 - 3130	Imaging of Ferromagnetic Domains Using Photoelectrons - Photoelectron Emission Microscopy of Neodymium-Iron-Boron (Nd2Fe14B) Mundschau M, Romanowicz J, Wang JY, Sun DL, Chen HC
3131 - 3135	Effect of Silicon Processing on Giant Magnetoresistance Burkett SL, Yang J, Pillai D, Parker MR
3136 - 3139	Electronic Magnetic and Structural Coupling in Colossal Magnetoresistive (La,Ca)Mno3 Pickett WE, Singh DJ
3140 - 3147	Spin-Resolved X-Ray Photoemission-Studies of Ferromagnetic Metals Klebanoff LE
3148 - 3151	Magnetic Circular-Dichroism in Reflection Electron-Energy-Loss Spectroscopy Harp GR, Farrow RF, Marks RF
3152 - 3159	Probing Surface and Thin-Film Magnetic-Structure with Circularly-Polarized Synchrotron-Radiation Waddill GD, Tobin JG, Guo X, Tong SY
3160 - 3163	Theoretical Investigation of Structural Instabilities of Fe Layers on Face-Centered-Cubic Cu Nordstrom L, Singh DJ
3164 - 3170	Investigation of Face-Centered-Cubic Fe Thin-Films Using Wedged Samples Kawakami RK, Escorciaaparicio EJ, Qiu ZQ
3171 - 3175	Magnetic-X-Ray Dichroism in the Spectroscopy of Ultrathin Magnetic Alloy-Films Tobin JG, Goodman KW, Mankey GJ, Willis RF, Denlinger JD, Rotenberg E, Warwick A
3176 - 3179	Wavelength Dependence of the Magnetooptical Properties of the Interfaces of a Au Sandwiched (001) Fe Film Geerts W, Katayama T, Suzuki Y, Childress J
3180 - 3188	Correlation Between Dynamic Magnetic Hysteresis Loops and Nanoscale Roughness of Ultrathin Co Films Jiang Q, Yang HN, Wang GC
3189 - 3192	Magnetic-Behavior of Fexni((1-X)) and Coxni((1-X)) Pseudomorphic Films on Cu(100) Wu SZ, Schumann FO, Mankey GJ, Willis RF
3193 - 3198	Epitaxial-Growth, Structure, and Composition of Fe Films on GaAs(001)-2X4 Kneedler E, Thibado PM, Jonker BT, Bennett BR, Shanabrook BV, Wagner RJ, Whitman LJ
3199 - 3202	Mn 3S Multiplet Splitting of Pseudomorphic Mn Overlayers on Ru(001) Sham TK, Shek ML, Hrbek J, Vancampen DG
3203 - 3206	Temperature-Dependent Magnetic Surface Anisotropy in Ultrathin Fe Films Pappas DP
3207 - 3209	Distinguishing the Close-Packed Hexagonal and Face-Centered-Cubic Phases of the Metallization of Diamond by Polarization-Dependent Extended X-Ray-Absorption Fine-Structure Kemner KM, Elam WT, Harris VG, Idzerda YU, Wolf JA