Journal of Vacuum Science & Technology B

Journal of Vacuum Science & Technology B, Vol.14, No.5 Entire volume, number list

ISSN: 1071-1023 (Print)

In this Issue (31 articles)

3219 - 3225	Optimizing the Reactive Ion Etching of P-InGaP with CH4/H-2 by a 2-Level Fractional Factorial Design Process Chan RH, Cheng KY
3226 - 3229	Reactive Ion Etching of GaSb and Gaalsb Using Sicl4 Ou SS
3230 - 3238	Chemical Dry-Etching Mechanisms of GaAs Surface by HCl and Cl-2 Senga T, Matsumi Y, Kawasaki M
3239 - 3243	Method for the Determination of the Angular-Dependence During Dry-Etching Hedlund C, Strandman C, Katardjiev IV, Backlund Y, Berg S, Blom HO
3244 - 3247	Low-Resistance (Similar-to-1X10(-6)Omega-cm(2)) Au/Ge/Pd Ohmic Contact to N-Al0.5In0.5P Hao PH, Wang LC, Ressel P, Kuo JM
3248 - 3251	0.1 Mu-M AlGaAs/InGaAs High-Electron-Mobility Transistor Fabrication by the New Method of Thinned Resist Pattern Reversed by Metal Tanabe M, Matsuno T, Kashiwagi N, Sakai H, Inoue K, Tamura A
3252 - 3256	Interfacial Reactions and Ohmic Contact Formation in the Ni/Al-6H SiC System Marinova T, Yakimova R, Krastev V, Hallin C, Janzen E
3257 - 3262	Low-Resistivity Al-Re (Re=la, Pr, and Nd) Alloy Thin-Films with High Thermal-Stability for Thin-Film-Transistor Interconnects Takayama S, Tsutsui N
3263 - 3269	Comparative-Study of Tantalum and Tantalum Nitrides (Ta2N and Tan) as a Diffusion Barrier for Cu Metallization Min KH, Chun KC, Kim KB
3270 - 3275	Ionized Physical Vapor-Deposition of Cu for High-Aspect-Ratio Damascene Trench Fill Applications Nichols CA, Rossnagel SM, Hamaguchi S
3276 - 3282	High Selectivity Plasma-Etching of Silicon Dioxide with a Dual-Frequency 27/2 MHz Capacitive Radio-Frequency Discharge Tsai W, Mueller G, Lindquist R, Frazier B, Vahedi V
3283 - 3290	Plasma-Etching Process-Development Using in-Situ Optical-Emission and Ellipsometry Lee JT, Blayo N, Tepermeister I, Klemens FP, Mansfield WM, Ibbotson DE
3291 - 3298	Effects of Etch Products and Surface Oxidation on Profile Evolution During Electron-Cyclotron-Resonance Plasma-Etching of Poly-Si Tuda M, Ono K, Nishikawa K
3299 - 3304	Effect of Silicon Substrate Microroughness on Gate Oxide Quality Hegde RI, Chonko MA, Tobin PJ
3305 - 3315	Characterization of Silicon-Nitride Films Formed by Synchrotron Radiation-Excited Chemical-Vapor-Deposition Kyuragi H
3316 - 3320	A New Theory for Silicon Oxidation Peng KY, Wang LC, Slattery JC
3321 - 3326	Long-Term Reproducibility of Secondary-Ion Mass-Spectroscopy Measurements in Silicon Chu PK, Smith SP, Bleiler RJ
3327 - 3331	Study of the Function of Fluorine Anions in Development-Free Vapor Photolithography Lu JP, Hong XY, Liu D, Wang PQ, Chen YQ
3332 - 3338	Wet Silylation and Oxygen Plasma Development of Photoresists - A Mature and Versatile Lithographic Process for Microelectronics and Microfabrication Gogolides E, Tzevelekis D, Grigoropoulos S, Tegou E, Hatzakis M
3339 - 3349	Interferometric Lithography of Submicrometer Sparse Hole Arrays for Field-Emission Display Applications Chen XL, Zaidi SH, Brueck SR, Devine DJ
3350 - 3356	Photo-Hall Studies of Modulation-Doped Field-Effect Transistors with Short-Period Superlattice Channels Rather Than Alloy Channels Moreira MV, Deoliveira AG, Py MA
3357 - 3360	Emission Current Saturation of the P-Type Silicon Gated Field Emitter Array Hirano T, Kanemaru S, Itoh JJ
3361 - 3366	High-Resolution Patterning of Thin Magnetic-Films to Produce Ultrasmall Magnetic Elements Khamsehpour B, Wilkinson CD, Chapman JN, Johnston AB
3367 - 3380	In-Situ Observation of the Tip Shape of Auge Liquid Alloy Ion Sources Using a High-Voltage Transmission Electron-Microscope Driesel W, Dietzsch C, Muhle R
3381 - 3385	High-Speed Layer-by-Layer Patterning of Phthalocyanine Langmuir-Blodgett-Films by the Atomic-Force Microscope Bourgoin JP, Sudiwala RV, Palacin S
3386 - 3390	Improved Properties of Pure Langmuir Films of Tetra(Cumylphenoxy) Phthalocyanines Xu L, Krishnaswamy L, Burrows VA, George RD
3391 - 3392	Ultrafine Pattern X-Ray Mask Fabricated Using the Sidewall Method Xia AD, Fu SJ, Hong YL, Tian YC, Hu YG, Zhang XY, Lu J, Li FQ
3393 - 3394	Domain-Structure and Polarization Reversal in Ferroelectrics Studied by Atomic-Force Microscopy - Comment Takata K
3395 - 3399	Anisotropy in Resistivity of Monx Films at 4.2 K Kominami SY, Mita R, Nishino T
3400 - 3402	Selective Wet Etching of Lattice-Matched InGaAs/InAlAs on InP and Metamorphic InGaAs/InAlAs on GaAs Using Succinic Acid Hydrogen-Peroxide Solution Fourre H, Diette F, Cappy A
3403 - 3403	Magnetic-Behavior of Fexni((1-X)) and Coxni((1-X)) Pseudomorphic Films (Vol 14, Pg 3189, 1996) Wu SZ, Schumann FO, Mankey GJ, Willis RF