화학공학소재연구정보센터

Journal of Vacuum Science & Technology B

Journal of Vacuum Science & Technology B, Vol.27, No.5 Entire volume, number list
ISSN: 1071-1023 (Print) 

In this Issue (44 articles)

L21 - L24 Effect of sidewall passivation in BCl3/N-2 inductively coupled plasma etching of two-dimensional GaAs photonic crystals
Atlasov KA, Gallo P, Rudra A, Dwir B, Kapon E
L25 - L27 Effects of Ga+ milling on InGaAsP quantum well laser with mirrors milled by focused ion beam
Vallini F, Figueira DSL, Jarschel PF, Barea LAM, Von Zuben AAG, Frateschi NC
L28 - L31 Analysis of dielectric constant of a self-forming barrier layer with Cu-Mn alloy on TEOS-SiO2
Chung SM, Koike J
2079 - 2083 Impact of in situ SiNx layer grown with metal organic vapor phase epitaxy on the electrical and optical properties of AlN/GaN metal insulator semiconductor field effect transistor structures
Cho E, Seo S, Jin C, Pavlidis D, Fu G, Tuerck J, Jaegermann W
2084 - 2090 Analysis of thermally activated kinetics and uniformity of photoresist ashing process on 300 mm wafers
Mezerette DL, Tanimura K, Vinogradov GK
2091 - 2096 Effects of exposure time on defects and demolding force in soft ultraviolet nanoimprint lithography
Ye XD, Ding YC, Duan YG, Liu HZ, Lu BH
2097 - 2101 Inductively coupled plasma reactive ion etching of bulk ZnO single crystal and molecular beam epitaxy grown ZnO films
Mehta M, Ruth M, Piegdon KA, Krix D, Nienhaus H, Meier C
2102 - 2105 Enhancement of operation temperature of InAs/GaAs quantum-dot infrared photodetectors with hydrogen-plasma treatment
Lin WH, Tseng CC, Chao KP, Lin SY, Wu MC
2106 - 2111 Growth scaling of metal oxide columnar thin films deposited by glancing angle depositions
Taschuk MT, Krause KM, Steele JJ, Summers MA, Brett MJ
2112 - 2116 Effect of Ta buffer layer and thickness on the structural and magnetic properties of Co thin films
Vahaplar K, Tari S, Tokuc H, Okur S
2117 - 2123 Mechanism of reducing line edge roughness in ArF photoresist by using CF3I plasma
Soda E, Kondo S, Saito S, Koyama K, Jinnai B, Samukawa S
2124 - 2127 Structural and electrical properties of metal contacts on n-type ZnO thin film deposited by vacuum coating technique
Periasamy C, Chakrabarti P
2128 - 2131 Transparent dual-gate InGaZnO thin film transistors: OR gate operation
Lim W, Douglas EA, Lee J, Jang J, Craciun V, Norton DP, Pearton SJ, Ren F, Son SY, Yuh JH, Shen H, Chang W
2132 - 2137 Plasma treatment methods to improve indium bump bonding via indium oxide removal
Greer F, Dickie M, Vasquez RP, Jones TJ, Hoenk ME, Nikzad S
2138 - 2144 Highly sensitive positive-working molecular resist based on new molecule
Hattori S, Yamada A, Saito S, Asakawa K, Koshiba T, Nakasugi T
2145 - 2152 Pd/Ru/Au Ohmic contacts to InAlSb/InAs heterostructures for high electron mobility transistors
Dormaier R, Zhang Q, Chou YC, Lange MD, Yang JM, Oki A, Mohney SE
2153 - 2160 Controlled etching and regrowth of tunnel oxide for antenna-coupled metal-oxide-metal diodes
Tiwari B, Bean JA, Szakmany G, Bernstein GH, Fay P, Porod W
2161 - 2165 Nonlinear large deflection of nanopillars fabricated by focused ion-beam induced chemical vapor deposition using double-cantilever testing
Tanaka H, Shinkai M, Shibutani Y, Kogo Y
2166 - 2169 Cu-plated through-wafer vias for AlGaN/GaN high electron mobility transistors on Si
Chen KH, Ren F, Pais A, Xie HK, Gila BP, Pearton SJ, Johnson JW, Rajagopal P, Roberts JC, Piner EL, Linthicum KJ
2170 - 2174 Fabrication and optical properties of Ti-doped W18O49 nanorods using a modified plasma-arc gas-condensation technique
Su CY, Lin HC, Lin CK
2175 - 2181 Effects of Si interlayer on resistance switching of Pt/Si/TiO2/Pt structures
Go S, Jeong K, Lee K, Kim A, Ruh H, Kim CS, Lee J
2182 - 2186 Novel heterostructure of CdS nanoparticle/WO3 nanowhisker: Synthesis and photocatalytic properties
Kim H, Tak Y, Senthil K, Joo J, Jeon S, Yong K
2187 - 2191 Evolution of surface morphology of dry-etched ZnO with Cl-2/Ar plasma
Hsueh KP, Hou RJ, Tun CJ
2192 - 2199 Effect of liquid dispensing on flow field for immersion lithography
Chen WY, Chen Y, Zou J, Fu X, Yang HY, Ruan XD, Gong GF
2200 - 2205 The effect of acid on superconformal filling in 100 nm trenches
Gallaway JW, West AC
2206 - 2208 Organopalladium catalyst on S-terminated GaAs(001)-(2x6) surface
Konishi T, Toujyou T, Ishikawa T, Bell GR, Tsukamotoa S
2209 - 2216 Characterization of focused-ion-beam induced defect structures in graphite for the future guided self-assembly of molecules
O'Donnell SE, Reinke P
2217 - 2221 Calculation of electron emission from a gated single nanowire
Lei D, Wang WB, Zeng LY, Liang JQ
2222 - 2226 Electrical characterization of thin InAs films grown on patterned W/GaAs substrates
Astromskas G, Wallenberg LR, Wernersson LE
2227 - 2231 Comparison of conjugated polymer deposition techniques by photoluminescence spectroscopy
Lantz KR, Pate R, Stiff-Roberts AD, Duffell AG, Smith ER, Everitt HO
2232 - 2237 Oxygen effects on radiation hardness of ZnO thin films
Gur E, Asil H, Cinar K, Coskun C, Tuzemen S, Meral K, Onganer Y, Serifoglu K
2238 - 2241 Luminescence mechanisms in Si quantum dots-SiNx nanocomposite structures
Rezgui B, Sibai A, Nychyporuk T, Lemiti M, Bremond G
2242 - 2247 Surface plasmon resonance of gold nanoparticles formed by cathodic arc plasma ion implantation into polymer
Teixeira FS, Salvadori MC, Cattani M, Carneiro SM, Brown IG
2248 - 2251 Structural and luminescent properties of Er-doped ZnO films grown by metalorganic chemical vapor deposition
Terai Y, Yamaoka K, Yamaguchi T, Fujiwara Y
2252 - 2258 Etch stop in via-hole etching on aluminum interconnection using inductively coupled C2F6 plasma with O-2 additive gas
Imai S, Jiwari N
2259 - 2263 Nanoimprint mold fabrication and duplication for embedded servo and discrete track recording media
Tan EL, Aung KO, Sbiaa R, Wong SK, Tan HK, Poh WC, Piramanayagam SN, Chum CC
2264 - 2269 Uniformity conditioning of diamond field emitter arrays
Jarvis JD, Andrews HL, Brau CA, Choi BK, Davidson J, Kang WP, Wong YM
2270 - 2279 Time-multiplexed, inductively coupled plasma process with separate SiCl4 and O-2 steps for etching of GaAs with high selectivity
Golka S, Arens M, Reetz M, Kwapien T, Bouchoule S, Patriarche G
2280 - 2285 Numerical approach for the theory of harmonic self-heating technique to measure thermophysical properties of suspended thin samples
Feng B, Li ZX, Zhang X, Peterson GP
2286 - 2291 Film-thickness dependence of 10 GHz Nb coplanar-waveguide resonators
Inomata K, Yamamoto T, Watanabe M, Matsuba K, Tsai JS
2292 - 2300 Self-assembled monolayers of poly(ethylene glycol) siloxane as a resist for ultrahigh-resolution electron beam lithography on silicon oxide
Gao B, Bernstein GH, Lieberman M
2301 - 2308 Effect of etch-clean delay time on post-etch residue removal for front-end-of-line applications
Vos I, Hellin D, Vereecke G, Pavel E, Boullart W, Vertommen J
2309 - 2320 Diagnostics and modeling of CH4-CO2 plasmas for nanosmooth diamond deposition: Comparison to experimental data
Gries T, Vandenbulcke L, de Persis S, Aubry O, Delfau JL
2321 - 2323 Influence of room temperature control on atomic force microscope imaging
Fu J, Wei C, Vorburger T