L21 - L24 |
Effect of sidewall passivation in BCl3/N-2 inductively coupled plasma etching of two-dimensional GaAs photonic crystals Atlasov KA, Gallo P, Rudra A, Dwir B, Kapon E |
L25 - L27 |
Effects of Ga+ milling on InGaAsP quantum well laser with mirrors milled by focused ion beam Vallini F, Figueira DSL, Jarschel PF, Barea LAM, Von Zuben AAG, Frateschi NC |
L28 - L31 |
Analysis of dielectric constant of a self-forming barrier layer with Cu-Mn alloy on TEOS-SiO2 Chung SM, Koike J |
2079 - 2083 |
Impact of in situ SiNx layer grown with metal organic vapor phase epitaxy on the electrical and optical properties of AlN/GaN metal insulator semiconductor field effect transistor structures Cho E, Seo S, Jin C, Pavlidis D, Fu G, Tuerck J, Jaegermann W |
2084 - 2090 |
Analysis of thermally activated kinetics and uniformity of photoresist ashing process on 300 mm wafers Mezerette DL, Tanimura K, Vinogradov GK |
2091 - 2096 |
Effects of exposure time on defects and demolding force in soft ultraviolet nanoimprint lithography Ye XD, Ding YC, Duan YG, Liu HZ, Lu BH |
2097 - 2101 |
Inductively coupled plasma reactive ion etching of bulk ZnO single crystal and molecular beam epitaxy grown ZnO films Mehta M, Ruth M, Piegdon KA, Krix D, Nienhaus H, Meier C |
2102 - 2105 |
Enhancement of operation temperature of InAs/GaAs quantum-dot infrared photodetectors with hydrogen-plasma treatment Lin WH, Tseng CC, Chao KP, Lin SY, Wu MC |
2106 - 2111 |
Growth scaling of metal oxide columnar thin films deposited by glancing angle depositions Taschuk MT, Krause KM, Steele JJ, Summers MA, Brett MJ |
2112 - 2116 |
Effect of Ta buffer layer and thickness on the structural and magnetic properties of Co thin films Vahaplar K, Tari S, Tokuc H, Okur S |
2117 - 2123 |
Mechanism of reducing line edge roughness in ArF photoresist by using CF3I plasma Soda E, Kondo S, Saito S, Koyama K, Jinnai B, Samukawa S |
2124 - 2127 |
Structural and electrical properties of metal contacts on n-type ZnO thin film deposited by vacuum coating technique Periasamy C, Chakrabarti P |
2128 - 2131 |
Transparent dual-gate InGaZnO thin film transistors: OR gate operation Lim W, Douglas EA, Lee J, Jang J, Craciun V, Norton DP, Pearton SJ, Ren F, Son SY, Yuh JH, Shen H, Chang W |
2132 - 2137 |
Plasma treatment methods to improve indium bump bonding via indium oxide removal Greer F, Dickie M, Vasquez RP, Jones TJ, Hoenk ME, Nikzad S |
2138 - 2144 |
Highly sensitive positive-working molecular resist based on new molecule Hattori S, Yamada A, Saito S, Asakawa K, Koshiba T, Nakasugi T |
2145 - 2152 |
Pd/Ru/Au Ohmic contacts to InAlSb/InAs heterostructures for high electron mobility transistors Dormaier R, Zhang Q, Chou YC, Lange MD, Yang JM, Oki A, Mohney SE |
2153 - 2160 |
Controlled etching and regrowth of tunnel oxide for antenna-coupled metal-oxide-metal diodes Tiwari B, Bean JA, Szakmany G, Bernstein GH, Fay P, Porod W |
2161 - 2165 |
Nonlinear large deflection of nanopillars fabricated by focused ion-beam induced chemical vapor deposition using double-cantilever testing Tanaka H, Shinkai M, Shibutani Y, Kogo Y |
2166 - 2169 |
Cu-plated through-wafer vias for AlGaN/GaN high electron mobility transistors on Si Chen KH, Ren F, Pais A, Xie HK, Gila BP, Pearton SJ, Johnson JW, Rajagopal P, Roberts JC, Piner EL, Linthicum KJ |
2170 - 2174 |
Fabrication and optical properties of Ti-doped W18O49 nanorods using a modified plasma-arc gas-condensation technique Su CY, Lin HC, Lin CK |
2175 - 2181 |
Effects of Si interlayer on resistance switching of Pt/Si/TiO2/Pt structures Go S, Jeong K, Lee K, Kim A, Ruh H, Kim CS, Lee J |
2182 - 2186 |
Novel heterostructure of CdS nanoparticle/WO3 nanowhisker: Synthesis and photocatalytic properties Kim H, Tak Y, Senthil K, Joo J, Jeon S, Yong K |
2187 - 2191 |
Evolution of surface morphology of dry-etched ZnO with Cl-2/Ar plasma Hsueh KP, Hou RJ, Tun CJ |
2192 - 2199 |
Effect of liquid dispensing on flow field for immersion lithography Chen WY, Chen Y, Zou J, Fu X, Yang HY, Ruan XD, Gong GF |
2200 - 2205 |
The effect of acid on superconformal filling in 100 nm trenches Gallaway JW, West AC |
2206 - 2208 |
Organopalladium catalyst on S-terminated GaAs(001)-(2x6) surface Konishi T, Toujyou T, Ishikawa T, Bell GR, Tsukamotoa S |
2209 - 2216 |
Characterization of focused-ion-beam induced defect structures in graphite for the future guided self-assembly of molecules O'Donnell SE, Reinke P |
2217 - 2221 |
Calculation of electron emission from a gated single nanowire Lei D, Wang WB, Zeng LY, Liang JQ |
2222 - 2226 |
Electrical characterization of thin InAs films grown on patterned W/GaAs substrates Astromskas G, Wallenberg LR, Wernersson LE |
2227 - 2231 |
Comparison of conjugated polymer deposition techniques by photoluminescence spectroscopy Lantz KR, Pate R, Stiff-Roberts AD, Duffell AG, Smith ER, Everitt HO |
2232 - 2237 |
Oxygen effects on radiation hardness of ZnO thin films Gur E, Asil H, Cinar K, Coskun C, Tuzemen S, Meral K, Onganer Y, Serifoglu K |
2238 - 2241 |
Luminescence mechanisms in Si quantum dots-SiNx nanocomposite structures Rezgui B, Sibai A, Nychyporuk T, Lemiti M, Bremond G |
2242 - 2247 |
Surface plasmon resonance of gold nanoparticles formed by cathodic arc plasma ion implantation into polymer Teixeira FS, Salvadori MC, Cattani M, Carneiro SM, Brown IG |
2248 - 2251 |
Structural and luminescent properties of Er-doped ZnO films grown by metalorganic chemical vapor deposition Terai Y, Yamaoka K, Yamaguchi T, Fujiwara Y |
2252 - 2258 |
Etch stop in via-hole etching on aluminum interconnection using inductively coupled C2F6 plasma with O-2 additive gas Imai S, Jiwari N |
2259 - 2263 |
Nanoimprint mold fabrication and duplication for embedded servo and discrete track recording media Tan EL, Aung KO, Sbiaa R, Wong SK, Tan HK, Poh WC, Piramanayagam SN, Chum CC |
2264 - 2269 |
Uniformity conditioning of diamond field emitter arrays Jarvis JD, Andrews HL, Brau CA, Choi BK, Davidson J, Kang WP, Wong YM |
2270 - 2279 |
Time-multiplexed, inductively coupled plasma process with separate SiCl4 and O-2 steps for etching of GaAs with high selectivity Golka S, Arens M, Reetz M, Kwapien T, Bouchoule S, Patriarche G |
2280 - 2285 |
Numerical approach for the theory of harmonic self-heating technique to measure thermophysical properties of suspended thin samples Feng B, Li ZX, Zhang X, Peterson GP |
2286 - 2291 |
Film-thickness dependence of 10 GHz Nb coplanar-waveguide resonators Inomata K, Yamamoto T, Watanabe M, Matsuba K, Tsai JS |
2292 - 2300 |
Self-assembled monolayers of poly(ethylene glycol) siloxane as a resist for ultrahigh-resolution electron beam lithography on silicon oxide Gao B, Bernstein GH, Lieberman M |
2301 - 2308 |
Effect of etch-clean delay time on post-etch residue removal for front-end-of-line applications Vos I, Hellin D, Vereecke G, Pavel E, Boullart W, Vertommen J |
2309 - 2320 |
Diagnostics and modeling of CH4-CO2 plasmas for nanosmooth diamond deposition: Comparison to experimental data Gries T, Vandenbulcke L, de Persis S, Aubry O, Delfau JL |
2321 - 2323 |
Influence of room temperature control on atomic force microscope imaging Fu J, Wei C, Vorburger T |