1 - 1 |
Proceedings of the 2nd International Conference on Crystalline Silicon Photovoltaics (SiliconPV 2012) Poortmans J |
2 - 6 |
SiliconPV 2012 generation of defect-related acceptor states by laser doping Safiei A, Derix R, Suckow S, Koch H, Breuer U, Pletzer TM, Wolter K, Kurz H |
7 - 10 |
Impact of screen printing silver paste components on the space charge region recombination losses of industrial silicon solar cells Hoenig R, Kalio A, Sigwarth J, Clement F, Glatthaar M, Wilde J, Biro D |
11 - 16 |
Improving the a-Si:H(p) rear emitter contact of n-type silicon solar cells Bivour M, Reichel C, Hermle M, Glunz SW |
17 - 21 |
Interface properties of a-SiNx:H/Si to improve surface passivation Lamers MWPE, Butler KT, Harding JH, Weeber A |
22 - 26 |
Aging behaviour of laser welded Al-interconnections in crystalline silicon modules Schulte-Huxel H, Blankemeyer S, Bock R, Merkle A, Kajari-Schroder S, Brendel R |
27 - 30 |
Self-aligned local contacts through a-Si:H passivation layer Carstens K, Miyajima S, Schubert MB |
31 - 36 |
Modeling majority carrier mobility in compensated crystalline silicon for solar cells Schindler F, Schubert MC, Kimmerle A, Broisch J, Rein S, Kwapil W, Warta W |
37 - 41 |
Simple power-loss analysis method for high-efficiency Interdigitated Back Contact (IBC) silicon solar cells Verlinden PJ, Aleman M, Posthuma N, Fernandez J, Pawlak B, Robbelein J, Debucquoy M, Van Wichelen K, Poortmans J |
42 - 46 |
Dynamic photoluminescence lifetime imaging of multicrystalline silicon bricks Herlufsen S, Bothe K, Schmidt J, Brendel R, Siegmund S |
47 - 50 |
Silicon heterojunction solar cells: Influence of H-2-dilution on cell performance Gogolin R, Ferre R, Turcu M, Harder NP |
51 - 54 |
Development of lead-free silver ink for front contact metallization Kalio A, Leibinger M, Filipovic A, Kruger K, Glatthaar M, Wilde J |
55 - 59 |
Time-resolved photoluminescence imaging with electronic shuttering using an image intensifier unit Kiliani D, Herguth A, Micard G, Ebser J, Hahn G |
60 - 65 |
Photoluminescence imaging under applied bias for characterization of Si surface passivation layers Haug H, Nordseth O, Monakhov EV, Marstein ES |
66 - 70 |
Improved QSS-mu PCD measurement with quality of decay control: Correlation with steady-state carrier lifetime Wilson M, Edelman P, Lagowski J, Olibet S, Mihailetchi V |
71 - 75 |
Rating and sorting of mc-Si as-cut wafers in solar cell production using PL imaging Haunschild J, Reis IE, Chipei T, Demant M, Thaidigsmann B, Linse M, Rein S |
76 - 79 |
Reverse saturation current density imaging of highly doped regions in silicon: A photoluminescence approach Muller J, Bothe K, Herlufsen S, Hannebauer H, Ferre R, Brendel R |
80 - 83 |
p-type c-Si solar cells based on rear side laser processing of Al2O3/SiCx stacks Ortega P, Martin I, Lopez G, Colina M, Orpella A, Voz C, Alcubilla R |
84 - 88 |
Industrial PERL-type solar cells exceeding 19% with screen-printed contacts and homogeneous emitter Moors M, Baert K, Caremans T, Duerinckx F, Cacciato A, Szlufcik J |
89 - 94 |
Loss analysis and efficiency potential of p-type MWT-PERC solar cells Thaidigsmann B, Greulich J, Lohmuller E, Schmeisser S, Clement F, Wolf A, Biro D, Preu R |