1 - 1 |
Editorial to the Proceedings of the 4th International Conference on Crystalline Silicon Photovoltaics (SiliconPV 2014) Weeber A |
2 - 8 |
Influence of bound hydrogen states on BO-regeneration kinetics and consequences for high-speed regeneration processes Wilking S, Beckh C, Ebert S, Herguth A, Hahn G |
9 - 13 |
TCO work function related transport losses at the a-Si:H/TCO-contact in SHJ solar cells Ritzau KU, Bivour M, Schroer S, Steinkemper H, Reinecke P, Wagner F, Hermle M |
14 - 23 |
Unified methodology for determining CTM ratios: Systematic prediction of module power Haedrich I, Eitner U, Wiese M, Wirth H |
24 - 29 |
Development of industrial processes for the fabrication of high efficiency n-type PERT cells Blevin T, Lanterne A, Grange B, Cabal R, Vilcot JP, Veschetti Y |
30 - 36 |
Implementation of Fermi-Dirac statistics and advanced models in PC1D for precise simulations of silicon solar cells Haug H, Kimmerle A, Greulich J, Wolf A, Marstein ES |
37 - 45 |
Laser-doped metal-plated bifacial silicon solar cells Wang X, Allen V, Vais V, Zhao YB, Tjahjono B, Yao Y, Wenham S, Lennon A |
46 - 50 |
Tunnel oxide passivated contacts as an alternative to partial rear contacts Feldmann F, Bivour M, Reichel C, Steinkemper H, Herm M, Glunz SW |
51 - 57 |
Lifetimes exceeding 1 ms in 1-Omega cm boron-doped Cz-silicon Walter DC, Lim B, Bothe K, Falster R, Voronkov VV, Schmidt J |
58 - 63 |
Structured wire: From single wire experiments to multi-crystalline silicon wafer mass production Anspach O, Hurka B, Sunder K |
64 - 71 |
Fine line metallization by coextrusion technology for next generation solar cells Beutel M, Lewis A, Prondzinski M, Selbmann F, Richter P, Bamberg F, Raschtschepkin P, Krause A, Koch C, Hentsche M, Stegemann KH, Schneiderlochner E, Neuhaus H |
72 - 76 |
Symmetrical Al2O3-based passivation layers for p- and n-type silicon Simon DK, Jordan PM, Dirnstorfer I, Benner F, Richter C, Mikolajick T |
77 - 84 |
An accurate method for calibrating photoluminescence-based lifetime images on multi-crystalline silicon wafers Sio HC, Phang SP, Trupke T, Macdonald D |
85 - 91 |
Recombination behavior and contact resistance of n(+) and p(+) poly-crystalline Si/mono-crystalline Si junctions Romer U, Peibst R, Ohrdes T, Lim B, Krugener J, Bugiel E, Wietler T, Brendel R |
92 - 99 |
Towards a unified low-field model for carrier mobilities in crystalline silicon Schindler F, Forster M, Broisch J, Schon J, Giesecke J, Rein S, Warta W, Schubert MC |
100 - 104 |
Efficient carrier-selective p- and n-contacts for Si solar cells Feldmann F, Simon M, Bivour M, Reichel C, Hermle M, Glunz SW |
105 - 109 |
Microscopic origin of the aluminium assisted spiking effects in n-type silicon solar cells Heinz FD, Breitwieser M, Gundel P, Konig M, Horteis M, Warta W, Schubert MC |
110 - 116 |
Organic-silicon heterojunction solar cells on n-type silicon wafers: The BackPEDOT concept Zielke D, Pazidis A, Werner F, Schmidt J |
117 - 123 |
Interstitial oxygen imaging from thermal donor growth-A fast photoluminescence based method Niewelt T, Lim S, Holtkamp J, Schon J, Warta W, Macdonald D, Schubert MC |
124 - 128 |
Analysis of solar cell cross sections with micro-light beam induced current (mu LBIC) Breitwieser M, Heinz FD, Buchler A, Kasemann M, Schon J, Warta W, Schubert MC |
129 - 133 |
PassDop rear side passivation based on Al2O3/a-SiCx:B stacks for p-type PERL solar cells Steinhauser B, Jager U, Benick J, Hermle M |