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Special Issue: Proceedings of the 5th International Conference on Crystalline Silicon Photovoltaics (SiliconPV 2015) [Anonymous] |
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Impact of boron doping profiles on the specific contact resistance of screen printed Ag-Al contacts on silicon Lohmuller E, Werner S, Hoenig R, Greulich J, Clement F |
12 - 17 |
Ion implantation of boric molecules for silicon solar cells Krugener J, Peibst R, Bugiel E, Tetzlaff D, Kiefer F, Jestremski M, Brendel R, Osten HJ |
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Progress in fine-line metallization by co-extrusion printing on cast monosilicon PERC solar cells Richter LP, Fischer G, Sylla L, Hentsche M, Steckemetz S, Muller M, Cobb CL, Solberg SE, Rao R, Elrod S, Palinginis P, Schneiderlochner E, Neuhaus DH |
24 - 28 |
Power loss prognosis from thermographic images of PID affected silicon solar modules Kaden T, Lammers K, Moller HJ |
29 - 33 |
Analysis of the Atomic Layer Deposited Al2O3 field-effect passivation in black silicon von Gastrow G, Alcubilla R, Ortega P, Yli-Koski M, Conesa-Boj S, Morral AFI, Savin H |
34 - 41 |
Molybdenum and tungsten oxide: High work function wide band gap contact materials for hole selective contacts of silicon solar cells Bivour M, Temmler J, Steinkemper H, Hermle M |
42 - 46 |
Passivation of c-Si surfaces by ALD tantalum oxide capped with PECVD silicon nitride Wan YM, Bullock J, Cuevas A |
47 - 53 |
PC1Dmod 6.1-state-of-the-art models in a well-known interface for improved simulation of Si solar cells Haug H, Greulich J, Kimmerle A, Marstein ES |
54 - 59 |
Analysis of n-type IBC solar cells with diffused boron emitter locally blocked by implanted phosphorus Muller R, Reichel C, Schrof J, Padilla M, Selinger M, Geisemeyer I, Benick J, Hermle M |
60 - 65 |
Rear side sphere gratings for improved light trapping in crystalline silicon single junction and silicon-based tandem solar cells Eisenlohr J, Lee BG, Benick J, Feldmann F, Driessen M, Milenkovic N, Blasi B, Goldschmidt JC, Hermle M |
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Process simplifications in large area hybrid silicon heterojunction solar cells Tous L, Granata SN, Choulat P, Bearda T, Michel A, Uruena A, Cornagliotti E, Aleman M, Gehlhaar R, Russell R, Duerinckx F, Szlufcik J |
75 - 82 |
Phosphorus-diffused polysilicon contacts for solar cells Yan D, Cuevas A, Bullock J, Wan YM, Samundsett C |
83 - 86 |
Degradation of multicrystalline silicon solar cells and modules after illumination at elevated temperature Kersten F, Engelhart P, Ploigt HC, Stekolnikov A, Lindner T, Stenzel F, Bartzsch M, Szpeth A, Petter K, Heitmann J, Muller JW |
87 - 91 |
From simulation to experiment: Understanding BO-regeneration kinetics Wilking S, Forster M, Herguth A, Hahn G |
92 - 101 |
Towards an improved Laplacian-based photoluminescence image evaluation method Breitenstein O, Bauer J, Hinken D, Bothe K |
102 - 106 |
Drift characteristics of mobile ions in SiNx films and solar cells Wilson M, Savtchouk A, Edelman P, Marinskiy D, Lagowski J |
107 - 115 |
Identification of the most relevant metal impurities in mc n-type silicon for solar cells Schon J, Schindler F, Kwapil W, Knorlein M, Krenckel P, Riepe S, Warta W, Schubert MC |
116 - 122 |
Carrier-diffusion corrected J(0)-analysis of charge carrier lifetime measurements for increased consistency Kimmerle A, Greulich J, Wolf A |
123 - 127 |
Tunnel oxide passivated carrier-selective contacts based on ultra-thin SiO2 layers Moldovan A, Feldmann F, Zimmer M, Rentsch J, Benick J, Hermle M |
128 - 133 |
High-resolution structural investigation of passivated interfaces of silicon solar cells Richter S, Kaufmann K, Naumann V, Werner M, Graff A, Grosser S, Moldovan A, Zimmer M, Rentsch J, Bagdahn J, Hagendorf C |