1 - 2 |
Preface - EMRS 2001 Symposium E: Crystalline silicon for solar cells Kittler M, Martinuzzi S, Koch W, Bruton T |
3 - 10 |
General trends about photovoltaics based on crystalline silicon Bruton TM |
11 - 26 |
Solar grade silicon feedstock supply for PV industry Woditsch P, Koch W |
27 - 40 |
Silicon feedstock for the multi-crystalline photovoltaic industry Sarti D, Einhaus R |
41 - 48 |
Refining of metallurgical-grade silicon by inductive plasma Alemany C, Trassy C, Pateyron B, Li KI, Delannoy Y |
49 - 58 |
Solar cells from upgraded metallurgical grade (UMG) and plasma-purified UMG multi-crystalline silicon substrates De Wolf S, Szlufcik J, Delannoy Y, Perichaud I, Hassler C, Einhaus R |
59 - 68 |
Numerical simulations for silicon crystallization processes - examples from ingot and ribbon casting Steinbach I, Apel M, Rettelbach T, Franke D |
69 - 75 |
Plasma-refining process to provide solar-grade silicon Delannoy Y, Alemany C, Li KI, Proulx P, Trassy C |
77 - 81 |
Large size multicrystalline silicon ingots Ferrazza F |
83 - 92 |
Silicon ingot casting: process development by numerical simulations Franke D, Rettelbach T, Hassler C, Koch W, Muller A |
93 - 100 |
Melt growth of multicrystalline SiGe with large compositional distribution for new solar cell applications Nakajima K, Usami N, Fujiwara K, Murakami Y, Ujihara T, Sazaki G, Shishido T |
101 - 107 |
Multicrystalline silicon prepared by electromagnetic continuous pulling: recent results and comparison to directional solidification material Perichaud I, Martinuzzi S, Durand F |
109 - 124 |
Mono- and tri-crystalline Si for PV application Endros AL |
125 - 132 |
Electromagnetic continuous pulling process compared to current casting processes with respect to solidification characteristics Durand F |
133 - 138 |
Oxygen in Czochralski silicon used for solar cells Yang DR, Li DS, Wang LR, Ma XY, Que DL |
139 - 153 |
Silicon ribbons and foils - state of the art Kalejs JP |
155 - 163 |
Comparing improved state-of-the-art to former EFG Si-ribbons with respect to solar cell processing and hydrogen passivation Geiger P, Hahn G, Fath P, Bucher E |
165 - 171 |
Comparative studies of EFG poly-Si grown by different procedures Pivac B, Borjanovic V, Kovacevic I, Evtody BN, Katz EA |
173 - 181 |
Silicon tubes by a closed molten zone: a characterisation study Gamboa RM, Brito MC, Serra JM, Alves JM, Vallera AM |
183 - 189 |
Irradiation effects on polycrystalline silicon Borjanovic V, Kovacevic I, Zorc H, Pivac B |
191 - 200 |
Thin crystalline silicon solar cells Willeke GP |
201 - 208 |
Simulation of the crystallisation of silicon ribbons on substrate Apel M, Franke D, Steinbach I |
209 - 217 |
Silicon sheet from silane: first results Pinto CR, Gamboa RC, Henriques JC, Serra JM, Alves JM, Vallera AM |
219 - 219 |
The future of crystalline silicon films on foreign substrates (abstract only) Bergmann RB, Werner JH |
221 - 221 |
Crystalline silicon thin films with porous Si backside reflector (abstract only) Bilyalov R, Solanki CS, Poortmans J, Richard O, Bender H, Kummer M, von Kanel H |
223 - 229 |
Optical improved structure of polycrystalline silicon-based thin-film solar cell Budianu E, Purica M, Manea E, Rusu E, Gavrila R, Danila M |
231 - 246 |
Defect passivation of industrial multicrystalline solar cells based on PECVD silicon nitride Duerinckx F, Szlufcik J |
247 - 254 |
Phosphorous emitter etch back and bulk hydrogenation by means of an ECR-hydrogen plasma applied to form a selective emitter structure on mc-Si Debarge L, Boudaden J, Ballutaud D, Monna R, Muller JC |
255 - 261 |
Hydrogen passivation of defects in EFG ribbon silicon Mittelstadt L, Metz A, Hezel R |
263 - 269 |
Development of RTP for industrial solar cell processing Horzel J, Allebe C, Szlufcik J, Sivoththaman S |
271 - 276 |
Double porous silicon layer on multi-crystalline Si for photovoltaic application Lipinski A, Panek P, Swiatek Z, Beltowska E, Ciach R |
277 - 284 |
Dry processing of silicon solar cells in a large area microwave plasma reactor Gazuz V, Feldrapp K, Auer R, Brendel R, Schulz M |
285 - 290 |
n-p junction formation in p-type silicon by hydrogen ion implantation Barakel D, Ulyashin A, Perichaud I, Martinuzzi S |
291 - 298 |
Cost-effective methods of texturing for silicon solar cells Yerokhov VY, Hezel R, Lipinski M, Ciach R, Nagel H, Mylyanych A, Panek P |
299 - 313 |
Mechanisms and computer modelling of transition element gettering in silicon Schroter W, Kveder V, Seibt M, Sattler A, Spiecker E |
315 - 326 |
Gettering of impurities in solar silicon Perichaud I |
327 - 333 |
A simple passivation technique for the edge area of silicon solar cells improves the efficiency Al-Rifai MH, Carstensen J, Foll H |
335 - 341 |
Passivation of silicon by silicon nitride films Kunst M, Abdallah O, Wunsch F |
343 - 351 |
Solar cells prepared on multicrystalline silicon subjected to new gettering and passivation treatments Litovchenko VG, Klyuis NI, Evtukh AA, Efremov AA, Sarikov AV, Popov VG, Kostylyov VP, Rasamakin YV, Haessler C, Koch W |
353 - 359 |
Comparison between SiNx : H and hydrogen passivation of electromagnetically casted multicrystalline silicon material Fourmond E, Bilyalov R, Van Kerschaver E, Lemiti M, Poortmans J, Laugier A |
361 - 371 |
Study of an argon-hydrogen RF inductive thermal plasma torch used for silicon deposition by optical emission spectroscopy Bourg F, Pellerin S, Morvan D, Amouroux J, Chapelle J |
373 - 379 |
Aluminium BSF in silicon solar cells Kaminski A, Vandelle B, Fave A, Boyeaux JP, Nam LQ, Monna R, Sarti D, Laugier A |
381 - 387 |
Comparison of phosphorus gettering for different multicrystalline silicon Boudaden J, Monna R, Loghmarti M, Muller JC |
389 - 401 |
Defect and impurity diagnostics and process monitoring Warta W |
403 - 416 |
Oxygen and lattice distortions in multicrystalline silicon Moller HJ, Funke C, Lawerenz A, Riedel S, Werner M |
417 - 424 |
Fast LBIC in-line characterization for process quality control in the photovoltaic industry Acciarri M, Binetti S, Racz A, Pizzini S, Agostinelli G |
425 - 432 |
Surface analyses of polycrystalline and Cz-Si wafers Castaldini A, Cavalcoli D, Cavallini A, Rossi M |
433 - 440 |
Classification of shunting mechanisms in crystalline silicon solar cells Langenkamp M, Breitenstein O |
441 - 451 |
Defect recognition and impurity detection techniques in crystalline silicon for solar cells Istratov AA, Hieslmair H, Vyvenko OF, Weber ER, Schindler R |
453 - 464 |
Current collecting channels in RGS silicon solar cells - are they useful? Hahn G, Sontag D, Haessler C |
465 - 472 |
Room-temperature luminescence and electron-beam-induced current (EBIC) recombination behaviour of crystal defects in multicrystalline silicon Kittler M, Seifert W, Arguirov T, Tarasov I, Ostapenko S |
473 - 486 |
Resistivity topography: a grain boundary characterisation method Diaz MB, Koch W, Hassler C, Brautigam HG |
487 - 494 |
Defects in polycrystalline silicon studied by IBICC Borjanovic V, Jaksic M, Pastuovic Z, Pivac B, Vlahovic B, Dutta J, Jecmenica R |
495 - 501 |
Anodic and optical characterisation of stain-etched porous silicon antireflection coatings Guerrero-Lemus R, Hernandez-Rodriguez C, Ben-Hander F, Martinez-Duart JM |
503 - 508 |
Impurities and defects in multicrystalline silicon for solar cells: low-temperature photoluminescence investigations Mudryi AV, Patuk AI, Shakin IA, Ulyashin AG, Job R, Fahrner WR, Fedotov A, Mazanik A, Drozdov N |
509 - 515 |
Electrical activity of deep traps in p-type Si Kaniewska A, Lal A |
517 - 523 |
PEEM - a spectromicroscopic tool for mc-Si surface evaluation Hoffmann P, Mikalo RP, Schmeisser D |
525 - 532 |
SEM observation, photoconductivity investigation and I-V study of Si structures with patterned morphology for solar irradiance detection Gorbach TY, Smertenko PS, Svechnikov SV, Bondarenko VP, Ciach R, Kuzma M |
533 - 539 |
Two-dimensional resolution of minority carrier diffusion constants in different silicon materials Sontag D, Hahn G, Geiger P, Fath P, Bucher E |
541 - 549 |
Effect of heat treatment on carbon in multicrystalline silicon Yang DR, Moeller HJ |
551 - 558 |
Study of the solid phase crystallization behavior of amorphous sputtered silicon by X-ray diffraction and electrical measurements Farhi G, Aoucher M, Mohammed-Brahim T |
559 - 569 |
Surface photovoltage analysis of crystalline silicon for photovoltaic applications Castaldini A, Cavalcoli D, Cavallini A, Rossi M |
571 - 578 |
A novel multicrystalline silicon solar cell using grain boundary etching treatment and transparent conducting oxide Lim DG, Jang DM, Yi JS |
579 - 587 |
The influence of the composition of Si-Ge mixed crystals on thermal diffusivity - photoacoustic approach Patrin A, Abrosimov N, Malinski M, Bychto L |
589 - 595 |
Electrical activity of grain boundaries in silicon bicrystals and its modification by hydrogen plasma treatment Fedotov A, Mazanik A, Ulyashin A |
597 - 603 |
Silicon solar cells with antireflection diamond-like carbon and silicon carbide films Klyui NI, Litovchenko VG, Rozhin AG, Dikusha VN, Kittler M, Seifert W |
605 - 611 |
Development of a technology of silicon production by recycling phosphorous industry wastes Mukashev BN, Tamendarov MF, Kikkarin SM, Ustimenko AB |
613 - 619 |
Experimental and theoretical investigations of a new potential barrier due to sharp a-Si/c-Si heterointerfaces buried in the solar cell emitter Ley M, Kuznicki ZT |
621 - 628 |
New near-IR effect due to an amorphized substructure inserted in a c-Si solar-cell emitter Kuznicki ZT, Ley M |