1851 - 1854 |
Modeling of photoluminescence spectra and quasi-Fermi level splitting in mu c-Si:H solar cells Pieters BE, Kirchartz T, Merdzhanova T, Carius R |
1855 - 1859 |
All-in-situ fabrication and characterization of silicon nanowires on TCO/glass substrates for photovoltaic application Yu LW, O'Donnell B, Alet PJ, Cabarrocas PRI |
1860 - 1863 |
Nanocrystalline p-layer for a-Si:H p-i-n solar cells and photodiodes Vygranenko Y, Fathi E, Sazonov A, Vieira M, Nathan A |
1864 - 1868 |
Optimization of the p-i interface properties in thin film microcrystalline silicon solar cell Agbo SN, Krc J, van Swaaij RACMM, Zeman M |
1869 - 1874 |
Properties of n-type polycrystalline silicon solar cells formed by aluminium induced crystallization and CVD thickening Tuzun O, Qiu Y, Slaoui A, Gordon I, Maurice C, Venkatachalam S, Chatterjee S, Beaucarne G, Poortmans J |
1875 - 1879 |
Differential calorimetry study of the initial stage of the sulphurisation process of CuInSe2 solar cell materials Tang K, Kunecke U, Oehlschlager F, Holzing A, Schurr R, Hock R, Wellmann PW |
1880 - 1883 |
Tandem solar cells with Cu(In,Ga)S-2 top cells on ZnO coated substrates Kaigawa R, Funahashi K, Fujie R, Wada T, Merdes S, Caballero R, Klenk R |
1884 - 1888 |
Electrical characterization of CIGSe solar cells metastability with Zn(S,O,OH)-ZnMgO interface buffer layers Serhan J, Djebbour Z, Darga A, Mencaraglia D, Naghavi N, Renou G, Lincot D, Guillemeoles JF |
1889 - 1892 |
Sulfur-containing Cu2ZnSnSe4 monograin powders for solar cells Timmo K, Altosaar M, Raudoja J, Muska K, Pilvet M, Kauk M, Varema T, Danilson M, Volobujeva O, Mellikov E |
1893 - 1896 |
Quantum wells based on Si/SiOx stacks for nanostructured absorbers Berghoff B, Suckow S, Rolver R, Spangenberg B, Kurz H, Sologubenko A, Mayer J |
1897 - 1902 |
Spectral properties of photogenerated carriers in quantum well solar cells Aeberhard U |
1903 - 1906 |
Enhancement of optical absorption in Ga-chalcopyrite-based intermediate-band materials for high efficiency solar cells Aguilera I, Palacios P, Wahnon P |
1907 - 1911 |
Thermal stability of intermediate band behavior in Ti implanted Si Olea J, Pastor D, Martil I, Gonzalez-Diaz G |
1912 - 1918 |
Optoelectronic evaluation of the nanostructuring approach to chalcopyrite-based intermediate band materials Marron DF, Canovas E, Levy MY, Marti A, Luque A, Afshar M, Albert J, Lehmann S, Abou-Ras D, Sadewasser S, Barreau N |
1919 - 1922 |
Towards upconversion for amorphous silicon solar cells de Wild J, Meijerink A, Rath JK, van Sark WGJHM, Schropp REI |
1923 - 1926 |
Enhancement of up-conversion efficiency by combining rare earth-doped phosphors with PbS quantum dots Pan AC, del Canizo C, Canovas E, Santos NM, Leitao JP, Luque A |
1927 - 1930 |
Multiple carrier generation in solar cells Queisser HJ |
1931 - 1935 |
Phonon lifetimes in model quantum dot superlattice systems with applications to the hot carrier solar cell Patterson R, Kirkengen M, Veettil BP, Konig D, Green MA, Conibeer G |
1936 - 1941 |
Study of silicon quantum dots in a SiO2 matrix for energy selective contacts applications Aliberti P, Shrestha SK, Teuscher R, Zhang B, Green MA, Conibeer GJ |
1942 - 1946 |
Amorphous SixC1-x:H single layers before and after thermal annealing: Correlating optical and structural properties Hanel AM, Kunle M, Loper P, Janz S, Bett AW |
1947 - 1952 |
Chlorine doping of Cu2O Biccari F, Malerba C, Mittiga A |
1953 - 1958 |
Band structure at heterojunction interfaces of GaInP solar cells Gudovskikh AS, Kleider JP, Kalyuzhnyy NA, Lantratov VM, Mintairov SA |