Thin Solid Films

Thin Solid Films, Vol.518 Entire volume, number list

ISSN: 0040-6090 (Print)

In this Issue (66 articles)

S1 - S1	Sixth International Conference on Silicon Epitaxy and Heterostructures Preface Xie YH, Liu JL, Bauer M
S2 - S5	Low temperature growth of Ge1-xSnx buffer layers for tensile-strained Ge layers Shimura Y, Tsutsui N, Nakatsuka O, Sakai A, Zaima S
S6 - S11	Multiscale simulation for epitaxial silicon carbide growth by chlorides route Masi M, Fiorucci A, Camarda M, La Magna A, La Via F
S12 - S17	Analysis of silicon germanium vapor phase epitaxy kinetics Tomasini P, Machkaoutsan V, Thomas SG
S18 - S22	Si1-xGex growth using Si3H8 by low temperature chemical vapor deposition Takeuchi S, Nguyen ND, Goosens J, Caymax M, Loo R
S23 - S29	Antimony surfactant for epitaxial growth of SiGe buffer layers at high deposition temperatures Storck P, Vorderwestner M, Kondratyev A, Talalaev R, Amamchyan A, Woelk E
S30 - S34	Formation and characterization of hybrid nanodot stack structure for floating gate application Miyazaki S, Makihara K, Ikeda M
S35 - S37	Study of the effects of growth temperature and time on the alignment of Si quantum dots on hafnium oxide coated single wall carbon nanotubes Olmedo M, Martinez-Morales AA, Liu G, Yengel E, Ozkan CS, Lau CN, Ozkan M, Liu JL
S38 - S43	Observation of discrete dopant potential and its application to Si single-electron devices Tabe M, Moraru D, Ligowski M, Anwar M, Yokoi K, Jablonski R, Mizuno T
S44 - S47	B atomic layer doping of Ge Yamamoto Y, Kopke K, Kurps R, Murota J, Tillack B
S48 - S52	Use of p- and n-type vapor phase doping and sub-melt laser anneal for extension junctions in sub-32 nm CMOS technology Nguyen ND, Rosseel E, Takeuchi S, Everaert JL, Yang L, Goossens J, Moussa A, Clarysse T, Richard O, Bender H, Zaima S, Sakai A, Loo R, Lin JC, Vandervorst W, Caymax M
S53 - S56	Enabling Moore's Law beyond CMOS technologies through heteroepitaxy Thomas SG, Tomasini P, Bauer M, Vyne B, Zhang Y, Givens M, Devrajan J, Koester S, Lauer I
S57 - S61	Electrical characteristics of thermal CVD B-doped Si films on highly strained Si epitaxially grown on Ge(100) by plasma CVD without substrate heating Sugawara K, Sakuraba M, Murota J
S62 - S64	Heavy atomic-layer doping of nitrogen in Si1-xGex film epitaxially grown on Si(100) by ultraclean low-pressure CVD Kawashima T, Sakuraba M, Tillack B, Murota J
S65 - S67	Antimony doped Si Esaki diodes without post growth annealing Oehme M, Kirfel O, Werner J, Kaschel M, Kasper E, Schulze J
S68 - S71	Optimization of external poly base sheet resistance in 0.13 mu m quasi self-aligned SiGe:C HBTs You S, Van Huylenbroeck S, Nguyen ND, Sibaja-Hernandez A, Venegas R, Van Wichelen K, Decoutere S, De Meyer K
S72 - S75	Simulation of a nanoscale strained Si NMOSFET with a silicon-carbon alloy stressor Huang J, Chang ST, Wang WC, Lee CC
S76 - S79	Analysis of SiGe/Si quantum dot superlattices grown by low-pressure chemical vapor deposition for thin solar cells Lee ML, Dezsi G, Venkatasubramanian R
S80 - S82	Epitaxially grown emitters for thin film silicon solar cells result in 16% efficiency Van Nieuwenhuysen K, Payo MR, Kuma-Filipek I, Van Hoeymissen J, Beaucarne G, Poortmans J
S83 - S87	Germanium for silicon photonics Ishikawa Y, Wada K
S88 - S91	Short-channel epitaxial germanium pMOS transistors Eneman G, De Jaeger B, Wang G, Mitard J, Hellings G, Brunco DP, Simoen E, Loo R, Caymax M, Claeys C, De Meyer K, Meuris M, Heyns MM
S92 - S95	Influence of induced stress on enrichment kinetic during local Ge condensation of SiGe/SOI mesas Dechoux N, Damlencourt JF, Rivallin P, Brianceau P, Bernasconi S, Benevent V, Vallee C, Barbe JC, Billon T, Bensahel D
S96 - S103	High permittivity materials for oxide gate stack in Ge-based metal oxide semiconductor capacitors Molle A, Baldovino S, Spiga S, Fanciulli M
S104 - S112	Quest of electric field controlled spintronics in MnGe Wang KL, Xiu FX
S113 - S117	Effect of thickness on structural and magnetic properties of Mn5Ge3 films grown on Ge(111) by solid phase epitaxy Spiesser A, Olive-Mendez SF, Dau MT, Michez LA, Watanabe A, Le Thanh V, Glachant A, Derrien J, Barski A, Jamet M
S118 - S122	Structural properties of epitaxial SrHfO3 thin films on Si (001) Sawkar-Mathur M, Marchiori C, Fompeyrine J, Toney MF, Bargar J, Chang JP
S123 - S127	Interface analysis of Ge ultra thin layers intercalated between GaAs substrates and oxide stacks Molle A, Lamagna L, Spiga S, Fanciulli M, Brammertz G, Meuris M
S128 - S132	Chemical vapor deposition of large area few layer graphene on Si catalyzed with nickel films Liu W, Chung CH, Miao CQ, Wang YJ, Li BY, Ruan LY, Patel K, Park YJ, Woo J, Xie YH
S133 - S135	Stability of silicon germanium stressors Tomasini P, Machkaoutsan V, Thomas SG, Loo R, Caymax M, Verheyen P
S136 - S139	Effect of isochronal hydrogen annealing on surface roughness and threading dislocation density of epitaxial Ge films grown on Si Kobayashi S, Nishi Y, Saraswat KC
S140 - S142	Heavy B atomic-layer doping in Si epitaxial growth on Si(100) using electron-cyclotron-resonance plasma CVD Nosaka T, Sakuraba M, Tillack B, Murota J
S143 - S146	Numerical studies of temperature profile and hydrodynamic phenomena during excimer laser assisted heteroepitaxial growth of patterned silicon and germanium bi-layers Conde JC, Chiussi S, Martin E, Gontad F, Fornarini L, Leon B
S147 - S150	Structural change of direct silicon bonding substrates by interfacial oxide out-diffusion annealing Kato T, Nakamura Y, Kikkawa J, Sakai A, Toyoda E, Izunome K, Nakatsuka O, Zaima S, Imai Y, Kimura S, Sakata O
S151 - S153	Determination of substitutional carbon content in rapid thermal chemical vapour deposited Si-1 (-) (x) (-) yGexCy on Si (100) using Raman spectroscopy Wasyluk J, Perova TS, Meyer F
S154 - S158	Effective mass and subband structure of strained Si in a PMOS inversion layer with external stress Chang ST, Huang J, Tang M, Lin CY
S159 - S161	Extended study of the step-bunching mechanism during the homoepitaxial growth of SiC Camarda M, La Magna A, Severino A, La Via F
S162 - S164	Ion energy and dose dependence of strain relaxation for thin SiGe buffer layers using Si+ implantation Hoshi Y, Sawano K, Yamada A, Arimoto K, Usami N, Nakagawa K, Shiraki Y
S165 - S169	High-quality 6 inch (111) 3C-SiC films grown on off-axis (111) Si substrates Severino A, Bongiorno C, Piluso N, Italia M, Camarda M, Mauceri M, Condorelli G, Di Stefano MA, Cafra B, La Magna A, La Via F
S170 - S173	Giant growth of single crystalline Ge on insulator by seeding lateral liquid-phase epitaxy Tanaka T, Tanaka M, Itakura M, Sadoh T, Miyao M
S174 - S178	Al-induced low-temperature crystallization of Si-1 (-) Ge-x(x) (0 < x < 1) by controlling layer exchange process Kurosawa M, Sadoh T, Miyao M
S179 - S181	Formation of single-crystalline Ge stripes on quartz substrates by SiGe mixing-triggered liquid-phase epitaxy Toko K, Tanaka T, Sadoh T, Miyao M
S182 - S185	Liquid-phase epitaxial growth of Ge island on insulator using Ni-imprint-induced Si crystal as seed Toko K, Sakane T, Tanaka T, Sadoh T, Miyao M
S186 - S189	Fabrication of double-dot single-electron transistor in silicon nanowire Jo M, Kaizawa T, Arita M, Fujiwara A, Ono Y, Inokawa H, Choi JB, Takahashi Y
S190 - S195	Kinetic investigation of the electrochemical synthesis of vertically-aligned periodic arrays of silicon nanorods on (001)Si substrate Cheng SL, Chen CY, Lee SW
S196 - S199	Composition redistribution of self-assembled Ge islands on Si (001) during annealing Lee SW, Chang HT, Lee CH, Cheng SL, Liu CW
S200 - S203	Novel chemical precursors and novel CVD strategies enabling low temperature epitaxy of Si and Si:C alloys Bauer M, Thomas SG
S204 - S207	Optical and structural investigation of Si nanoclusters in amorphous hydrogenated silicon Shcherbyna YS, Torchynska TV
S208 - S211	Surface phonons and exciton-polariton coupling in SiC nanocrystals Polupan G, Torchynska TV
S212 - S216	Multiple energy transfer in porous silicon/Rh6G/RhB nanocomposite evidenced by photoluminescence and its polarization memory Chouket A, Elhouichet H, Koyama H, Gelloz B, Oueslati M, Koshida N
S217 - S221	Controlling dislocation positions in silicon germanium (SiGe) buffer layers by local oxidation Hu Q, Seo I, Zhang ZN, Lee SH, Kim HM, Kim SH, Kim YS, Lee HH, Xie YH, Kim KB, Yoon TS
S222 - S225	Heavy carbon atomic-layer doping at Si-1 (-) Ge-x(x)/Si heterointerface Hirano T, Sakuraba M, Tillack B, Murota J
S226 - S230	Formation processes of Ge3N4 films by radical nitridation and their electrical properties Kato K, Kondo H, Sakashita M, Zaima S
S231 - S233	Impact of Si cap layer growth on surface segregation of P incorporated by atomic layer doping Chiba Y, Sakuraba M, Tillack B, Murota J
S234 - S236	Influence of the modulation doping to the mobility of two-dimensional electron gases in Si/SiGe Werner J, Oehme M, Kasper E, Schulze J
S237 - S240	Metal-oxide-semiconductor SiGe/Si quantum dot infrared photodetectors with delta doping in different positions Lin CH, Liu CW
S241 - S245	Strain engineering of nanoscale Si MOS devices Huang J, Chang ST, Hsieh BF, Liao MH, Wang WC, Lee CC
S246 - S249	The gap state density of micro/nano-crystalline silicon active layer on flexible substrate Lee MH, Chang ST, Lee CC, Huang JJ, Hu GK, Huang YS
S250 - S254	TCAD simulation of hydrogenated amorphous silicon-carbon/microcrystalline-silicon/hydrogenated amorphous silicon-germanium PIN solar cells Chang ST, Tang M, He RY, Wang WC, Pei Z, Kung CY
S255 - S258	Si/Ge/Si double heterojunction solar cells Lin CH
S259 - S261	Simulation of nanorod structures for an amorphous silicon-based solar cell Tang M, Chang ST, Chen TC, Pei ZW, Wang WC, Huang J
S262 - S265	Self-assembled Ge/Si hetero-nanocrystals for nonvolatile memory application Li B, Liu JL
S266 - S269	Long range Mn segregation and intermixing during subsequent deposition of Ge capping layers on Mn5Ge3/Ge(111) hetero structures Dau MT, Spiesser A, LeGiang T, Michez LA, Olive-Mendez SF, Le Thanh V, Petit M, Raimundo JM, Glachant A, Derrien J
S270 - S272	Phosphorus doping of silicon at substrate temperatures above 600 degrees C Thompson PE, Jernigan GG, Simons D, Chi P, Jonker BT, van 't Erve OMJ
S273 - S277	Molecular beam epitaxial growth of ferromagnetic Heusler alloys for group-IV semiconductor spintronic devices Miyao M, Hamaya K, Sadoh T, Itoh H, Maeda Y
S278 - S280	Epitaxial growth of a full-Heusler alloy CO2FeSi on silicon by low-temperature molecular beam epitaxy Yamada S, Yamamoto K, Ueda K, Ando Y, Hamaya K, Sadoh T, Miyao M
S281 - S284	Investigation of the electrical properties of the alkaline-earth oxides BaO, SrO and Ba0.7Sr0.30 on Si(001) as alternative gate dielectrics Cosceev A, Muller-Sajak D, Pfnur H, Hofmann KR