Thin Solid Films

Thin Solid Films, Vol.533 Entire volume, number list

ISSN: 0040-6090 (Print)

In this Issue (21 articles)

1 - 4	Performance enhancement in p-channel charge-trapping flash memory devices with Si/Ge super-lattice channel and band-to-band tunneling induced hot-electron injection Liu LJ, Chang-Liao KS, Jian YC, Wang TK, Tsai MJ
5 - 8	The effect of oxygen source on atomic layer deposited Al2O3 as blocking oxide in metal/aluminum oxide/nitride/oxide/silicon memory capacitors Nikolaou N, Ioannou-Sougleridis V, Dimitrakis P, Normand P, Skarlatos D, Giannakopoulos K, Kukli K, Niinisto J, Ritala M, Leskela M
9 - 14	Atomic layer-deposited Al-HfO2/SiO2 bi-layers towards 3D charge trapping non-volatile memory Congedo G, Wiemer C, Lamperti A, Cianci E, Molle A, Volpe FG, Spiga S
V - V	Preface to E-MRS 2012 Symposium L: Novel Functional Materials and Nanostructures for innovative non-volatile memory devices Spiga S, Muller C, Cowburn R, Riel H, Siegel J
15 - 18	Nature of the filament formed in HfO2-based resistive random access memory De Stefano F, Houssa M, Afanas'ev VV, Kittl JA, Jurczak M, Stesmans A
19 - 23	Role of Ti and Pt electrodes on resistance switching variability of HfO2-based Resistive Random Access Memory Cabout T, Buckley J, Cagli C, Jousseaume V, Nodin JF, de Salvo B, Bocquet M, Muller C
24 - 28	Study of resistive random access memory based on TiN/TaOx/TiN integrated into a 65 nm advanced complementary metal oxide semiconductor technology Diokh T, Le-Roux E, Jeannot S, Cagli C, Jousseaume V, Nodin JF, Gros-Jean M, Gaumer C, Mellier M, Cluzel J, Carabasse C, Candelier P, De Salvo B
29 - 33	Thermal-stability optimization of Al2O3/Cu-Te based conductive-bridging random access memory systems Goux L, Opsomer K, Franquet A, Kar G, Jossart N, Richard O, Wouters DJ, Muller R, Detavernier C, Jurczak M, Kittl JA
34 - 37	Electron barrier height at CuxTe1-x/Al2O3 interfaces of conducting bridge memory stacks Afanas'ev VV, De Stefano F, Houssa M, Stesmans A, Goux L, Opsomer K, Detavernier C, Kittl JA, Jurczak M
38 - 42	Effect of an ultrathin SiO2 interfacial layer on the hysteretic current-voltage characteristics of CeOx-based metal-insulator-metal structures Miranda E, Kano S, Dou C, Sune J, Kakushima K, Iwai H
43 - 47	Variable resistor made by repeated steps of epitaxial deposition and lithographic structuring of oxide layers by using wet chemical etchants Weber D, Vofely R, Chen YH, Mourzina Y, Poppe U
48 - 53	Preparation of resistance random access memory samples for in situ transmission electron microscopy experiments Kudo M, Arita M, Ohno Y, Fujii T, Hamada K, Takahashi Y
54 - 60	Deposition by radio frequency magnetron sputtering of GaV4S8 thin films for resistive random access memory application Souchier E, Besland MP, Tranchant J, Corraze B, Moreau P, Retoux R, Estournes C, Mazoyer P, Cario L, Janod E
61 - 65	Electrical characterizations of resistive random access memory devices based on GaV4S8 thin layers Tranchant J, Janod E, Cario L, Corraze B, Souchier E, Leclercq JL, Cremillieu P, Moreau P, Besland MP
66 - 69	Growth study and characterization of In-Sb-Te compounds deposited onto different substrates by metal-organic chemical vapour deposition Stoycheva T, Longo M, Fallica R, Volpe F, Wiemer C
70 - 74	Perpendicular magnetic anisotropy in piezoelectric- and dielectric-ferromagnetic heterostructures based on Co/Pt multilayers Lin WW, Lei N, Vernier N, Agnus G, Adam JP, Eimer S, Devolder T, Lecoeur P, Ravelosona D
75 - 78	Perpendicular magnetic anisotropy in Ta/CoFeB/MgO systems synthesized on treated SiN/SiO2 substrates for magnetic memories Mantovan R, Lamperti A, Tallarida G, Baldi L, Mariani M, Ocker B, Ahn SM, Barisic I, Ravelosona D
79 - 82	Interface width evaluation in thin layered CoFeB/MgO multilayers including Ru or Ta buffer layer by X-ray reflectivity Lamperti A, Ahn SM, Ocker B, Mantovan R, Ravelosona D
83 - 87	Stabilization of tetragonal/cubic phase in Fe doped zirconia grown by atomic layer deposition Lamperti A, Cianci E, Ciprian R, Sangalli D, Debernardi A
88 - 92	Impact of layer thickness on the ferroelectric behaviour of silicon doped hafnium oxide thin films Yurchuk E, Muller J, Knebel S, Sundqvist J, Graham AP, Melde T, Schroder U, Mikolajick T
93 - 96	First principles study of the spontaneous electric polarization in Ga2-xFexO3 Stoeffler D