1 - 2 |
Special issue on "Current Trends in Optical and X-Ray Metrology of Advanced Materials for Nanoscale Devices III", E-MRS Spring 2012-Symposium W, held in Strasbourg, France, May 14-18, 2012 Modreanu M, Durand O, Jellison GE, Salviati G, Fried M |
3 - 8 |
M-line spectroscopic, spectroscopic ellipsometric and microscopic measurements of optical waveguides fabricated by MeV-energy N+ ion irradiation for telecom applications Banyasz I, Berneschi S, Fried M, Lohner T, Conti GN, Righini GC, Pelli S, Zolnai Z |
9 - 11 |
Vibrational properties of 2H-PbI2 semiconductors studied via Density Functional Theory calculations Pedesseau L, Even J, Katan C, Raouafi F, Wei Y, Deleporte E, Jancu JM |
12 - 16 |
Advanced modeling for optical characterization of amorphous hydrogenated silicon films Franta D, Necas D, Zajickova L, Ohlidal I, Stuchlik J |
17 - 20 |
CoSi2 ultra-thin layer formation kinetics and texture from X-ray diffraction Delattre R, Simola R, Rivero C, Serradeil V, Perrin-Pellegrino C, Thomas O |
21 - 27 |
Combined in situ x-ray scattering and electrical measurements for characterizing phase transformations in nanometric functional films Putero M, Duployer B, Blum I, Ouled-Khachroum T, Coulet MV, Perrin C, Ziegler E, Muller C, Mangelinck D |
28 - 31 |
Determination of nanoscale heat conductivity by time-resolved X-ray scattering Issenmann D, Wehmeier N, Eon S, Bracht H, Buth G, Ibrahimkutty S, Plech A |
32 - 35 |
Optical spectroscopy used to investigate water evaporation rate from aqueous solutions Tomozeiu N |
36 - 40 |
Synchrotron X-ray diffraction analysis for quantitative defect evaluation in GaP/Si nanolayers Thanh TN, Robert C, Letoublon A, Cornet C, Quinci T, Giudicelli E, Almosni S, Boudet N, Ponchet A, Kuyyalil J, Danila M, Durand O, Bertru N, Le Corre A |
41 - 45 |
In-situ characterization of the temperature-sensitive swelling behavior of poly(N-isopropylacrylamide) brushes by infrared and visible ellipsometry Furchner A, Bittrich E, Uhlmann P, Eichhorn KJ, Hinrichs K |
46 - 50 |
Nondestructive mapping of chemical composition and structural qualities of group III-nitride nanowires using submicron beam synchrotron-based X-ray diffraction Bonanno PL, Gautier S, El Gmili Y, Moudakir T, Sirenko AA, Kazimirov A, Cai ZH, Martin J, Goh WH, Martinez A, Ramdane A, Le Gratiet L, Maloufi N, Assouar MB, Ougazzaden A |
51 - 56 |
An efficient rough-interface scattering model for embedded nano-structures Karamehmedovic M, Hansen PE, Wriedt T |
57 - 61 |
Strain characterization of FinFETs using Raman spectroscopy Kaleli B, van Hemert T, Hueting RJE, Wolters RAM |
62 - 67 |
Subtle Raman signals from nano-diamond and beta-SiC thin films Kuntumalla MK, Ojha H, Srikanth VVSS |
68 - 71 |
Bimodal luminescence behavior of spatially-ordered seven-stacked InAs/InAlGaAs quantum dots Oh JW, Ryu MY, Jo B, Kim JS, Harris TR, Yeo YK |
72 - 75 |
Raman investigation of GaP-Si interfaces grown by molecular beam epitaxy Bondi A, Cornet C, Boyer S, Thanh TN, Letoublon A, Pedesseau L, Durand O, Moreac A, Ponchet A, Le Corre A, Even J |
76 - 78 |
Investigation of germanium implanted with aluminum by multi-laser micro-Raman spectroscopy Sanson A, Napolitani E, Impellizzeri G, Giarola M, De Salvador D, Privitera V, Priolo F, Mariotto G, Carnera A |
79 - 82 |
Monitoring of incorporation of magnetic ions into II-VI semiconductor nanocrystals by optical and magneto-optical spectroscopy Savchuk AI, Stolyarchuk ID, Savchuk TA, Smolinsky MM, Shporta OA, Shynkura LM |
83 - 86 |
Model dielectric function analysis of the critical point features of silicon nanocrystal films in a broad parameter range Agocs E, Nassiopoulou AG, Milita S, Petrik P |
87 - 91 |
Structural and optical properties of AlGaP confinement layers and InGaAs quantum dot light emitters onto GaP substrate: Towards photonics on silicon applications Robert C, Thanh TN, Letoublon A, Perrin M, Cornet C, Levallois C, Jancu JM, Even J, Turban P, Balocchi A, Marie X, Durand O, Le Corre A |
92 - 96 |
Optical studies of amorphous Ge nanostructures in Al2O3 produced by pulsed laser deposition Martin-Sanchez J, Toudert J, Serna R, de Andres A, Garcia-Lopez J |
97 - 101 |
Determination of small tilt angles of short GaSb nanopillars using UV-visible Mueller matrix ellipsometry Aas LMS, Kildemo M, Cohin Y, Sondergard E |
102 - 106 |
Optical investigations of the effect of solvent and thermal annealing on the optoelectronic properties of Poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) films Laskarakis A, Karagiannidis PG, Georgiou D, Nikolaidou DM, Logothetidis S |
107 - 112 |
Assessment of the out-plane and in-plane ordering of high quality ZnO nanorods by X-ray multiple diffraction Martinez-Tomas MC, Montenegro DN, Agouram S, Sallet V, Munoz-Sanjose V |
113 - 116 |
Vibrational properties of SrCu2O2 studied via Density Functional Theory calculations and compared to Raman and infrared spectroscopy measurements Even J, Pedesseau L, Durand O, Modreanu M, Huyberechts G, Servet B, Chaix-Pluchery O |
117 - 120 |
Effect of processing options on ultra-low-loss lead-magnesium-niobium titanate thin films for high density capacitors Chen WB, McCarthy KG, O'Brien S, Copuroglu M, Cai M, Winfield R, Mathewson A |
121 - 126 |
Influence of thermal treatment in N-2 atmosphere on chemical, microstructural and optical properties of indium tin oxide and nitrogen doped indium tin oxide rf-sputtered thin films Stroescu H, Anastasescu M, Preda S, Nicolescu M, Stoica M, Stefan N, Kampylafka V, Aperathitis E, Modreanu M, Zaharescu M, Gartner M |
127 - 130 |
Electro-optic and dielectric properties of epitaxial Ph1-3X/2LaxZr0.2Ti0.8O3 thin films obtained by pulsed laser deposition Scarisoreanu ND, Craciun F, Andrei A, Ion V, Birjega R, Moldovan A, Dinescu M, Galassi C |
131 - 135 |
Comparative measurements on atomic layer deposited Al2O3 thin films using ex situ table top and mapping ellipsometry, as well as X-ray and VUV reflectometry Petrik P, Gumprecht T, Nutsch A, Roeder G, Lemberger M, Juhasz G, Polgar O, Major C, Kozma P, Janosov M, Fodor B, Agocs E, Fried M |
136 - 141 |
In-situ Raman spectroscopy and X-ray diffraction studies of the structural transformations leading to the SrCu2O2 phase from strontium copper oxide thin films deposited by metalorganic chemical vapor deposition Khan A, Jimenez C, Chaix-Pluchery O, Roussel H, Deschanvres JL |