1 - 14 |
Approaches to Understanding MBE Growth Phenomena Herman MA |
15 - 23 |
The Origin of Surface Roughening in Lattice-Mismatched Vandermerwe,Frank Type Heteroepitaxy Springholz G, Frank N, Bauer G |
24 - 31 |
Islands and Critical Thickness of InAs Grown by MBE on Nominallyoriented and Misoriented GaAs Substrates Sasaki A |
32 - 36 |
Self-Organization Processes in MBE-Grown Quantum-Dot Structures Bimberg D, Grundmann M, Ledentsov NN, Ruvimov SS, Werner P, Richter U, Heydenreich J, Ustinov VM, Kopev PS, Alferov ZI |
37 - 46 |
MBE Growth Mechanisms - Studies by Monte-Carlo Simulation Sitter H |
47 - 50 |
A Study of a Kinetic Rate-Equation Model for Simulations of MBE Crystal-Growth - A Comparison with Monte-Carlo Simulations Papajova D, Nemeth S, Hagston WE, Sitter H, Vesely M |
51 - 53 |
The Effect of the MBE Growth-Rate on the Surface Phase-Diagram for GaAs(001) Preobrazhenskii VV, Lubyshev DI, Reginski K, Muszalski J |
54 - 57 |
Static Phase-Diagrams of Reconstructions for MBE-Grown GaAs(001) and AlAs(001) Surfaces Reginski K, Muszalski J, Preobrazhenskii VV, Lubyshev DI |
58 - 63 |
Growth and Characterization of Quantum Structures of Diluted Magnetic Semiconductors Kossut J |
64 - 68 |
Luminescence Study of CdTe/Cd1-xMnxTe Quantum-Wells Grown by MBE Kutrowski M, Kopalko K, Karczewski G, Wojtowicz T, Kossut J |
69 - 73 |
Band-Structure of MBE-Grown Zb-MnTe/CdTe-Optical and Photoemission-Studies Kowalski BJ, Guziewicz E, Orlowski BA, Janik E, Karczewski G, Wojtowicz T, Kossut J, Vangemmeren T, Buslaps T, Johnson RL |
74 - 78 |
Structural-Properties of Cubic MnTe Layers Grown by MBE Janik E, Dynowska E, Bakmisiuk J, Leszczynski M, Szuszkiewicz W, Wojtowicz T, Karczewski G, Zakrzewski AK, Kossut J |
79 - 83 |
Properties of Epitaxially Grown CdTe Layers Doped with Indium Karczewski G, Zakrzewski AK, Dobaczewski L, Dobrowolski W, Grodzicka E, Jaroszynski J, Wojtowicz T, Kossut J |
84 - 88 |
Exciton Dynamics in Thin AlGaAs/GaAs Quantum-Wells Grown by MBE Bugajski M, Godlewski M, Bergman JP, Monemar B, Reginski K, Kaniewska M |
89 - 94 |
Epitaxial Metal Silicides - Interface Mapping by Scanning Probe Techniques Vonkanel H, Lee EY, Sirringhaus H, Kafader U |
95 - 98 |
Epitaxial Silicides - New Results from RHEED Analysis Mazurek P, Paprocki K, Mikolajczak P |
99 - 105 |
GaInAsP Gas-Source MBE Technology Pessa M, Tappura K, Ovtchinnikov A |
106 - 113 |
Growth and Characterization of P-Type GaAs/(Alga)as Heterostructures Grown on High-Index GaAs-Surfaces Henini M, Rodgers PJ, Crump PA, Gallagher BL, Hayden RK, Eaves L |
114 - 120 |
Morphology of the InAlAs/InP Interface in the MBE-Grown Heterostructures Analyzed by SIMS Depth Profiling Konarski P, Herman MA, Kozhukhov AV, Obodnikov VI |
121 - 125 |
The Controlled Growth of High-Quality Mercury Cadmium Telluride Varavin VS, Dvoretsky SA, Liberman VI, Mikhailov NN, Sidorov YG |
126 - 128 |
Quasi-2-Dimensional Electron Layer in Zncdhgte and PbS Heterostructures Andrukhiv A, Khlyap G, Andrukhiv M, Bochkariova L |
129 - 133 |
Electronic Surface-States in a Semiinfinite Effective-Mass Superlattice Kucharczyk R |
134 - 137 |
The Epitaxial-Growth of IV-VI Heterostructures and Superlattices on (001)Si Fedorenko AI, Fedorov AG, Sipatov AY, Mironov OA |
VII - VIII |
Papers Presented at the Workshop on Molecular-Beam Epitaxy Growth Physics and Technology (MBE-GPT-94), Warsaw, Poland, December 12-15, 1994 - Preface Herman MA |