1 - 5 |
Selective Deposition of Diamond Onto Si Substrates Using Tetraethylorthosilicate SiO2-Films as Masks Sun Z, He Y, Wang X, Sun Y, Zheng Z, Xu C, Xu R |
6 - 13 |
The Interaction of Dimethylethylaminealane and Ammonia on Clean and Oxidized Al(111) - Atomic Layer Growth of Aluminum Nitride Ludviksson A, Robinson DW, Rogers JW |
14 - 16 |
Preparation and Characterization of Bi2S3 Thin-Films Spray Deposited from Nonaqueous Media Killedar VV, Lokhande CD, Bhosale CH |
17 - 21 |
The Microstructure and Properties of a Buried AlN Layer Produced by Nitrogen Implantation into Pure Aluminum Lu HL, Sommer WF, Borden MJ, Tesmer JR, Wu XD |
22 - 28 |
Sol-Gel Deposition of Pure and Antimony Doped Tin Dioxide Thin-Films by Non Alkoxide Precursors Senguttuvan TD, Malhotra LK |
29 - 33 |
Controlling Factors on the Synthesis of Pb(Zrxti1-X)O-3 Films Tanaka H, Tabata H, Kawai T, Yamazaki Y, Oki S, Gohda S |
34 - 38 |
Effects of Deposition Parameters on the Texture of Chromium Films Deposited by Vacuum Are Evaporation Gautier C, Machet J |
39 - 48 |
Polyorganosiloxane-Grafted Potato Starch Coatings for Protecting Aluminum from Corrosion Sugama T, Duvall JE |
49 - 53 |
New Application of Classical X-Ray-Diffraction Methods for Epitaxial Film Characterization Peterse WJ, Scholte PM, Steinfort AJ, Tuinstra F |
54 - 58 |
Ellipsometric Methods for Absorbing Layers - A Modified Downhill Simplex Algorithm Bosch S, Monzonis F, Masetti E |
59 - 64 |
Characterization of Lead Lanthanum Titanate Thin-Films Grown on Fused Quartz Using MOCVD Chen HY, Lin J, Tan KL, Feng ZC |
65 - 69 |
Structure Effect on Electrical-Properties of Ito Films Prepared by RF Reactive Magnetron Sputtering Meng LJ, Dossantos MP |
70 - 73 |
Atomic-Force Microscopy Study of the Growth-Mechanism of Ultrathin YBa2Cu3O7 (YBCO) Films Bai CL, Zhu CF, Wang XW, Zhang PC, Li Q, Wang C, Zhao BR, Zheng LZ, Li L |
74 - 78 |
Characterization for Morphology of Thin Deposited Fe, Fe2O3 and Cr2O3 Films on Silicon-Wafer Using Grazing-Incidence X-Ray-Scattering Kosaka T, Suzuki S, Saito M, Waseda Y, Matsubara E, Sadamori K, Aoyagi E |
79 - 83 |
Structural-Properties of Amorphous-Carbon Nitride Films Prepared by Remote Plasma-Enhanced Chemical-Vapor-Deposition Kim JH, Kim YH, Choi DJ, Baik HK |
84 - 89 |
Optical-Properties and Structure of SiO2-Films Prepared by Ion-Beam Sputtering Tabata A, Matsuno N, Suzuoki Y, Mizutani T |
90 - 94 |
Optical Investigation of Structures Formed by 2 MeV Oxygen Implantation into Silicon Hatzopoulos N, Siapkas DI, Hemment PL |
95 - 98 |
High-Energy Heavy-Ion-Induced Changes in the Photoluminescence and Chemical-Composition of Porous Silicon Mehta BR, Sahay MK, Malhotra LK, Avasthi DK, Soni RK |
99 - 106 |
Improved Control Techniques for the Reactive Magnetron Sputtering of Silicon to Produce Silicon-Oxide and the Implications for Selected Film Properties Danson N, Hall GW, Howson RP |
107 - 111 |
In-Situ Study on Alternating Vapor-Deposition Polymerization of Alkyl Polyamide with Normal Molecular-Orientation Kubono A, Yuasa N, Shao HL, Umemoto S, Okui N |
112 - 120 |
Plasma Chemical-Vapor-Deposition of A-C-S-N-H Films Using Organoisothiocyanates as Novel Single-Source Precursors Wrobel AM, Kryszewski M, Czeremuszkin G |
121 - 128 |
Steady-State Growth-Conditions in Ion-Assisted or Induced Planar Thin-Film Deposition Carter G |
129 - 132 |
Preparation and Characterization of Poly(3-(6-Tetrahydropyraniloxyhexyl))-2,5-Thienylene Langmuir-Blodgett-Films Bolognesi A, Bertini F, Bajo G, Provasoli A, Villa D, Ahumada O |
133 - 139 |
Determination of the Optical Dielectric-Constants and Deformational Effects, After Surface-Treatment, of a Polyimide Alignment Layer Used Within a Ferroelectric Liquid-Crystal Device System Lavers CR |
140 - 146 |
Model of DC Magnetron Reactive Sputtering in Ar-O-2 Gas-Mixtures Ershov A, Pekker L |
147 - 152 |
Metal-Organic Chemical-Vapor-Deposition of Manganese Gallium Alloys from the Novel Mixed-Metal Single-Source Precursors (Co)(5)Mnga(C2H5)(2)(N(CH3)(3)), (Co)(5)Mn-Ga(C2H5)(2)(Nc7H13) and ((Co)(5)Mn)Ga-2((CH2)(3)NMe(2)) Fischer RA, Miehr A, Metzger T |
153 - 158 |
Transparent Conducting ZnxCd1-Xo Thin-Films Prepared by the Sol-Gel Process Choi YS, Lee CG, Cho SM |
159 - 165 |
Analysis of AlN Thin-Films by Combining ToF-Erda and Nrb Techniques Jokinen J, Haussalo P, Keinonen J, Ritala M, Riihela D, Leskela M |
166 - 169 |
Gold Metallization for Aluminum Nitride Shalish I, Gasser SM, Kolawa E, Nicolet MA, Ruiz RP |
170 - 176 |
Growth-Processes of Dielectric Thin-Films in a Multipolar Microwave Plasma Excited by Distributed Electron-Cyclotron-Resonance Using Tetraethylorthosilicate (Teos) and Oxygen Precursors Delsol R, Raynaud P, Segui Y, Latreche M, Agres L, Mage L |
177 - 179 |
Conversion of an Ultrathin Na Overlayer into 2-Dimensional Patches by Ion-Bombardment Riccardi P, Bonanno A, Oliva A, Xu F |
180 - 183 |
Reinvestigation of the First Nucleated Phase in Nb/Si Multilayers Zhang M, Yu W, Wang WH, Wang WK |
184 - 191 |
Nucleation and Growth Mechanisms of Copper MOCVD Film on Au/Si Substrates Kim JY, Reucroft PJ, Park DK |
192 - 198 |
In-Situ Low-Temperature (600-Degrees-C) Wafer Surface Cleaning by Electron-Cyclotron-Resonance Hydrogen Plasma for Silicon Homoepitaxial Growth Kim H, Reif R |
199 - 204 |
Metal-Ion Complexation of N-Hexadecyl-8-Hydroxy-2-Quinolinecarboxamide in Monolayers at the Air-Water-Interface and in Organized Monolayer Systems Ouyang JM, Tai ZH, Tang WX |
205 - 206 |
Dislocation Mechanism of Diffusion in Pd/Ag Monocrystalline System Vasilyev AD |
207 - 212 |
Temperature-Variant Hardness Behavior of Plasma-Sprayed Ceramic Coatings Kim HJ, Kweon YG |
213 - 219 |
Optimizing Properties of CeO2 Sol-Gel Coatings for Protection of Metallic Substrates Against High-Temperature Oxidation Czerwinski F, Szpunar JA |
220 - 226 |
Formation of a Crystalline Metal-Rich Silicide in Thin-Film Titanium/Silicon Reactions Clevenger LA, Cabral C, Roy RA, Lavoie C, Jordansweet J, Brauer S, Morales G, Ludwig KF, Stephenson GB |
227 - 233 |
Structural and Electrical-Properties of Low-Temperature Polycrystalline Silicon Deposited Using Sif4-SiH4-H-2 Lim HJ, Ryu BY, Ryu JI, Jang J |
234 - 237 |
Effects of Rapid Thermal-Process on Structural and Electrical Characteristics of Y2O3 Thin-Films by RF-Magnetron Sputtering Horng RH, Wuu DS, Yu JW, Kung CY |
238 - 241 |
A Simple Method to Determine the Optical-Constants and Thicknesses of ZnxCd1-xS Thin-Films Torres J, Cisneros JI, Gordillo G, Alvarez F |
242 - 249 |
Temperature Behavior and 1/F Noise of Poly-Alkoxythiophene and Polypyrrole Thin-Film Microstructures Bruschi P, Nannini A, Serra G, Stussi E |
250 - 255 |
Introducing Atomic Layer Epitaxy for the Deposition of Optical Thin-Films Riihela D, Ritala M, Matero R, Leskela M |
256 - 260 |
Optimization of the GaN-Buffer Growth on 6H-SiC(0001) Byun D, Kim G, Lim D, Lee D, Choi IH, Park D, Kum DW |
261 - 266 |
A Transmission Electron-Microscopy Study of Interfacial Reactions in the Fe/GaAs System Rahmoune M, Eymery JP, Goudeau P, Denanot MF |
267 - 271 |
Consideration of Radiation-Induced Polymerization of Diacetylene lb Films for Dosimetry Ali NM, Tucker CE, Smith FA |
272 - 281 |
Adsorption of Alkyl-Trichlorosilanes on Glass and Silicon - A Comparative-Study Using Sum-Frequency Spectroscopy and XPS Lobau J, Rumphorst A, Galla K, Seeger S, Wolfrum K |
282 - 285 |
2nd-Harmonic Generation in Langmuir-Blodgett-Films of an Asymmetrically Substituted Metallophthalocyanine Liu YQ, Xu Y, Zhu DB, Zhao XS |
286 - 288 |
Influence of Temperature on the Electrical-Conductivity of 4-Br(4)Pccu Thin-Films in an Ammonia Atmosphere Pakhomov GL, Pozdnyaev DE, Spector VN |
289 - 294 |
Al-Sm and Al-Dy Alloy Thin-Films with Low-Resistivity and High Thermal-Stability for Microelectronic Conductor Lines Takayama S, Tsutsui N |
295 - 299 |
Vacuum Evaporation of Thin Alumina Layers Matolin V, Nehasil V, Bideux L, Robert C, Gruzza B |
300 - 305 |
Characterization and Electrical Property of Molten-Grown Cutcnq Film Material Liu SG, Liu YQ, Wu PJ, Zhu DB, Tian H, Chen KC |