Thin Solid Films

Thin Solid Films, Vol.336, No.1-2 Entire volume, number list

ISSN: 0040-6090 (Print)

In this Issue (90 articles)

1 - 8	Shape, size, strain and correlations in quantum dot systems studied by grazing incidence X-ray scattering methods Metzger TH, Kegel I, Paniago R, Lorke A, Peisl J, Schulze J, Eisele I, Schittenhelm P, Abstreiter G
9 - 12	Self-aggregation of InAs quantum dots on (N11) GaAs substrates Sanguinetti S, Fortina SC, Miotto A, Grilli E, Guzzi M, Henini M, Polimeni A, Eaves L
13 - 15	Growth of solution cast macromolecular pi-conjugated nanoribbons on mica Samori P, Francke V, Mullen K, Rabe JP
16 - 21	Adsorption induced giant faceting of vicinal Si(001) Horn-von Hoegen M, Heringdorf FJMZ, Kahler D, Schmidt T, Bauer E
22 - 25	Formation of highly uniform InGaAs ridge quantum wires by selective molecular beam epitaxy on novel InP patterned substrates Fujikura H, Kihara M, Hasegawa H
26 - 28	Retarded diffusion of boron in Si due to the formation of an epitaxial CoSi2 layer Kappius L, Bay HL, Mantl S, Tyagi AK, Breuer U, Becker JS
29 - 33	Surfactant-mediated epitaxy of Ge on Si: progress in growth and electrical characterization Kammler M, Reinking D, Hofmann KR, Horn-von Hoegen M
34 - 37	Growth of Ge on H-terminated Si(111) surface Ishii K, Kuriyama H, Ezoe K, Yamamoto T, Ikeda M, Matsumoto S
38 - 41	TEM study of InAs self-assembled quantum dots in GaAs Muller E, Ribeiro E, Heinzel T, Ensslin K, Medeiros-Ribeiro G, Petroff PM
42 - 48	Relation of initial thin film formation to defects induced by low energy ions Durand HA, Sekine K, Etoh K, Ito K, Kataoka I
49 - 52	Role of hydrogen during Si capping of strained Ge or Si1-xGex hut clusters Dentel D, Bischoff JL, Kubler L, Bolmont D
53 - 57	Cluster-size distribution of SiGe alloys grown by MBE Pinto N, Murri R, Rinaldi R
58 - 62	Structural properties of Ge nano-crystals embedded in SiO2 films from X-ray diffraction and Raman spectroscopy Rolo AG, Vasilevskiy MI, Conde O, Gomes MJM
63 - 68	Growth of III-V semiconductor layers on Si patterned substrates Gorbach TY, Holiney RY, Matveeva LA, Smertenko PS, Svechnikov SV, Venger EF, Ciach R, Faryna M
69 - 72	The influence of carbon on the surface morphology of Si(100) and on subsequent Ge island formation Butz R, Luth H
73 - 75	Composition and structure of Ge islands grown on Si(001) and of SiGe grown on Si mesa Regelman DV, Magidson V, Beserman R, Dettmer K
76 - 79	TEM studies of self-organization phenomena in CdSe fractional monolayers in a ZnSe matrix Sitnikova A, Sorokin S, Sedova I, Shubina T, Toropov A, Ivanov S, Falk L, Willander M
80 - 83	Study of InAs quantum dots in GaAs prepared on misoriented substrates Oswald J, Hulicius E, Vorlicek V, Pangrac J, Melichar K, Simecek T, Lippold G, Riede V
84 - 88	Orientation of aluminum nuclei on Si(100) and Si(111) Bisch C, Boellaard E, Janssen GCAM, Alkemade PFA, Radelaar S
89 - 91	Epitaxial growth at high rates with LEPECVD Rosenblad C, Graf T, Stangl J, Zhuang Y, Bauer G, Schulze J, von Kanel H
92 - 95	Structural characterization of SiGe step graded buffer layers grown on prestructured Si[001] substrates by molecular beam epitaxy Muller E, Hartmann R, David C, Grutzmacher D
96 - 99	TEM investigation of the dependence of structural defects on prelayer formation in GaAs-on-Si thin films Lioutas CB, Delimitisi A, Georgakilas A
IX - IX	Papers presented at the 1998 E-MRS spring conference, symposium D: Thin Films Epitaxial Growth and Nanostructures Strasbourg, France, June 16-19, 1998 - Preface Kasper E, Wang KL, Hasegawa H
100 - 103	STM study of step graded Si1-xGex/Si(001) buffers Kummer M, Vogeli B, Von Kanel H
104 - 108	Ion assisted MBE growth of SiGe nanostructures Bauer M, Oehme M, Lyutovich K, Kasper E
109 - 111	Coalescence of germanium islands on silicon Schollhorn C, Oehme M, Bauer M, Kasper E
112 - 115	Dislocation pattern formation in epitaxial structures based on SiGe alloys Yugova TG, Vdovin VI, Mil'vidskii MG, Orlov LK, Tolomasov VA, Potapov AV, Abrosimov NV
116 - 119	Defect distribution and morphology development of SiGe layers grown on Si(100) substrates by LPE Sembian AM, Konuma M, Silier I, Gutjahr A, Rollbuhler N, Banhart F, Babu SM, Ramasamy P
120 - 123	Annealing of CaF2 adlayers grown on Si(111): investigations of the morphology by atomic force microscopy Wollschlager J, Pietsch H, Kayser R, Klust A
124 - 129	The influence of stress on growth instabilities on Si substrates Lapena L, Berbezier I, Gallas B, Joyce B
130 - 136	Silicon quantum integrated circuits - an attempt to fabricate silicon-based quantum devices using CMOS fabrication techniques Paul DJ, Coonan B, Redmond G, O'Neill BJ, Crean GM, Hollander B, Mantl S, Zozoulenko I, Berggren KF, Lazzari JL, d'Avitaya FA, Derrien J
137 - 140	Assessment of transport parameters for the design of high speed Si/SiGe HBTs with compositionally graded base Weller J, Jorke H, Strohm K, Luy JF, Kibbel H, Herzog HJ, Sauer R
141 - 144	Carrier mobilities in modulation doped Si1-xGex heterostructures with respect to FET applications Hock G, Gluck M, Hackbarth T, Herzog HJ, Kohn E
145 - 148	Simulation of a non-invasive charge detector for quantum cellular automata Iannaccone G, Ungarelli C, Macucci M, Amirante E, Governale M
149 - 152	Domain wall splitting and creation of the fine domain structure Dorfman S, Fuks D, Gordon A, Kotomin E
153 - 155	Pulsed laser deposition of SmBaCuO thin films Di Trolio A, Morone A, Orlando S, Cappuccio G
156 - 159	Epitaxial zirconia films on sapphire substrates Mary C, Guinebretiere R, Trolliard G, Soulestin B, Villechaize P, Dauger A
160 - 162	Growth and magnetism of Co/NiO(111) thin films Mocuta C, Barbier A, Renaud G, Dieny B
163 - 167	Epitaxial growth of LiNbO3 on alpha Al2O3(0001) Veignant F, Gandais M, Aubertl P, Garry G
168 - 171	MgO surface microstructure and crystalline coherence of Co/Pt superlattices Haibach P, Koble J, Huth M, Adrian H
172 - 175	Fabrication and electrical properties of sol-gel derived (BaSr)TiO3 thin films with metallic LaNiO3 electrode Wu D, Li AD, Liu ZG, Ling HQ, Ge CZ, Liu XY, Wang H, Wang M, Lu P, Ming NB
176 - 178	Two-dimensional and zero-dimensional structures of semimagnetic semiconductors prepared by pulsed laser deposition Savchuk AI, Stolyarchuk ID, Medynskiy SV, Perrone A, Nikitin PI
179 - 182	RHEED investigation of limiting thickness epitaxy during low-temperature Si-MBE on (100) surface Nikiforov AI, Kanter BZ, Pchelyakov OP
183 - 187	The influence of growth temperature on the period of RHEED oscillations during MBE of Si and Ge on Si(111) surface Nikiforov AI, Markov VA, Cherepanov VA, Pchelyakov OP
188 - 190	Electrical properties of HgCdTe films obtained by laser deposition Wisz G, Virt I, Kuzma M
191 - 195	The growth kinetics of Si1-xGex layers from SiH4 and GeH4 Potapov AV, Orlov LK, Ivin SV
196 - 200	Crystal microstructure of PbTe/Si and PbTe/SiO2/Si thin films Ugai YA, Samoylov AM, Sharov MK, Tadeev AV
201 - 204	The growth of an intermediate CoSi phase during the formation of epitaxial CoSi2 by solid phase reaction Falke M, Gebhardt B, Beddies G, Teichert S, Hinneberg HJ
205 - 207	Valence band splitting in Cd(1-x)ZnxTe epilayers Cohen K, Beserman R, Stolyarova S, Weil R, Nemirovsky Y
208 - 212	Diffusion of Cd, Mg and S in ZnSe-based quantum well structures Strassburg M, Kuttler M, Pohl UW, Bimberg D
213 - 217	Epitaxial growth of ZnS on CdS in CdS/ZnS nanostructures Ricolleau C, Audinet L, Gandais M, Gacoin T
218 - 221	Correlation between the sign of strain and the surface morphology and defect structure of InAlAs grown on vicinal (111)BInP Georgakilas A, Tsagaraki K, Harteros K, Hatzopoulos Z, Vila A, Becourt N, Peiro F, Cornet A, Chrysanthakopoulos N, Calamiotou M
222 - 226	Allotaxy in the Ni-Si system Teichert S, Falke M, Giesler H, Beddies G, Hinneberg HJ
227 - 231	Influence of grown-in defects on the optical and electrical properties of Si/Si1-xGex/Si heterostructures Loo R, Caymax M, Simoen E, Howard D, Goryll M, Klaes D, Vescan L, Gravesteijn D, Pettersson H, Zhang X
232 - 235	Low temperature epitaxial growth of Si on Si(111) by gas-source MBE with heat-pulse annealing Ishikawa T, Okumura H, Akane T, Sano M, Giraud S, Nakabayashi Y, Matsumoto S
236 - 239	Strong surface segregation of Sb atoms at low temperatures during Si molecular beam epitaxy Jiang ZM, Pei CW, Liao LS, Zhou XF, Zhang XJ, Wang X, Jia QJ, Jiang XM, Ma ZH, Smith TR, Sou IK
240 - 243	Photoluminescence of self-assembled Ge dots grown by ultra-high-vacuum chemical vapor deposition Boucaud P, Le Thanh V, Sauvage S, Debarre D, Bouchier D, Lourtioz JM
244 - 247	Morphology and photoluminescence of Ge islands grown on Si(001) Goryll M, Vescan L, Luth H
248 - 251	C-induced Ge dots: a versatile tool to fabricate ultra-small Ge nanostructures Schmidt OG, Lange C, Eberl K, Kienzle O, Ernst F
252 - 255	Lateral ordering of self-assembled Ge islands Zhu JH, Brunner K, Abstreiter G, Kienzle O, Ernst F
256 - 261	Self organization of Ge dots on Si substrates: influence of misorientation Abdallah M, Berbezier I, Dawson P, Serpentini M, Bremond G, Joyce B
262 - 270	Low-energy electron microscopy of nanoscale three-dimensional SiGe islands on Si(100) Sutter P, Mateeva E, Sullivan JS, Lagally MG
271 - 276	X-ray diffraction analysis of strain relaxation in free standing and buried GaAs/GaInAs/GaAs SQW lateral structures Darowski N, Pietsch U, Wang KH, Forchel A, Shen Q, Kycia S
277 - 280	Dislocation half loop formation in GaSb/(001)GaAs islands and steps role: a Monte Carlo simulation Dalla Torre J, Rouhani MD, Landa G, Rocher AM, Malek R, Esteve D
281 - 285	Early stages of growth and nanostructure of Pb(Zr,Ti)O-3 thin films observed by atomic force microscopy Craciun F, Verardi P, Dinescu M, Dinelli F, Kolosov O
286 - 290	Dynamical properties of trions and excitons in modulation doped CdTe/CdMgZnTe quantum wells Brinkmann D, Kudrna J, Vanagas E, Gilliot P, Levy R, Arnoult A, Cibert J, Tatarenko S
291 - 294	Structural studies of epitaxial PbTiO3 films by optical second harmonic generation Mishina ED, Sherstyuk NE, Misyuraev TV, Sigov AS, Grishin AM, Rasing T, Aktsipetrov OA
295 - 298	Spectroscopic study of nanocrystalline TiO2 thin films grown by atomic layer deposition Suisalu A, Aarik J, Mandar H, Sildos I
299 - 305	The vertical heterojunction MOSFET De Meyer K, Caymax M, Collaert N, Loo R, Verheyen P
306 - 308	Selectively grown vertical Si MOS transistor with reduced overlap capacitances Klaes D, Moers J, Tonnesmann A, Wickenhauser S, Vescan L, Marso M, Grabolla T, Grimm M, Luth H
309 - 312	Optimization of the channel doping profile of vertical sub-100 nm MOSFETs Kaesen F, Fink C, Anil KG, Hansch W, Doll T, Grabolla T, Schreiber H, Eisele I
313 - 318	Comparison of lateral and vertical Si-MOSFETs with ultra short channels Behammer D, Zeuner M, Hackbarth T, Herzog J, Schafer M, Grabolla T
319 - 322	New virtual substrate concept for vertical MOS transistors Kasper E, Lyutovich K, Bauer M, Oehme M
323 - 325	Optical and electrical characterization of SiGe layers for vertical sub-100 nm MOS transistors Zhang XH, Unelind P, Kleverman M, Olajos J
326 - 331	Determination of light amplification processes in MOCVD grown ZnCdSe GRINSCH structures Mikulskas I, Brinkmann D, Luterova K, Tomasiunas R, Honerlage B, Vaitkus JV, Aulombard RL, Cloitre T
332 - 335	Formation of zero-dimensional hole states in Ge/Si heterostructures probed with capacitance spectroscopy Yakimov AI, Dvurechenskii AV, Nikiforov AI, Pchelyakov OP
336 - 339	Hole mobilities in pseudomorphic Si1-x-yGexCy alloy layers Duschl R, Seeberger H, Eberl K
340 - 343	Thin tantalum pentoxide films deposited by photo-induced CVD Zhang JY, Lim B, Boyd IW
344 - 346	Tunnelling currents in very narrow p(+)-n(+) junctions Reitemann G, Kasper E, Kibbel H, Jorke H
347 - 349	Optical on wafer measurement of Ge content of virtual SiGe-substrates Oehme M, Bauer M
350 - 353	Oscillatoric bias dependence of DC-electric field induced second harmonic generation from SiSiO2 multiple quantum wells Savkin VV, Fedyanin AA, Pudonin FA, Rubtsov AN, Aktsipetrov OA
354 - 357	The determination of e(14) in (111)B-grown (In,Ga)As/GaAs strained layers Ballet P, Disseix P, Leymarie J, Vasson A, Vasson AM, Grey R
358 - 361	Photoluminescence studies of As-P exchange in GaAs/GaInP2 quantum wells grown by chemical beam epitaxy Aurand A, Leymarie J, Vasson A, Vasson AM, Mesrine M, Deparis C, Leroux M
362 - 365	Characterization of inhomogeneous films by multiple-angle ellipsometry Colard S, Mihailovic M
366 - 369	Magnetoluminescence measurements of two-dimensional hole gas Ciorga M, Bryja L, Misiewicz J, Hansen OP
370 - 372	Optical pumping in strained InxGa1-xAs/GaAs quantum wells Hassen F, Sghaier H, Maaref H, Murray R
373 - 376	RF-sputtering deposition of Al/Al2O3 multilayers Paven-Thivet L, Malibert C, Houdy P, Albouy PA
377 - 380	Optical studies of carrier transport phenomena in CdSe/ZnSe fractional monolayer superlattices Shubina TV, Toropov AA, Sorokin SV, Ivanov SV, Kop'ev PS, Pozina GR, Bergman JP, Monemar B
381 - 385	Raman and photoreflectance studies of electronic band bending at ZnSe/GaAs interfaces Pages O, Erguig H, Wagner V, Zaoui A, Laurenti JP, Gueurts J, Aourag H, Aulombard RL, Certier M
386 - 390	TEM and AFM study of perovskite conductive LaNiO3 films prepared by metalorganic decomposition Li AD, Wu D, Liu ZG, Ge CZ, Liu XY, Chen GX, Ming NB