1 - 2 |
Solderable film for bottom side of semiconductor chips Zelenka J |
3 - 7 |
Studies of highly oriented CeO2 films grown on Si(111) by pulsed laser deposition Hirschauer B, Chiaia G, Gothelid M, Karlsson UO |
8 - 13 |
Copper nitride thin films prepared by reactive radio-frequency magnetron sputtering Nosaka T, Yoshitake M, Okamoto A, Ogawa S, Nakayama Y |
14 - 21 |
Performance of vertical power devices with contact-level copper metallization Cook J, Azam M, Leung P, Grupen M |
22 - 29 |
Porosity measurements by a gas penetration method and other techniques applied to membrane characterization Palacio L, Pradanos P, Calvo JI, Hernandez A |
30 - 37 |
Control of the growth of ordered C-60 films by chemical modification of Pt(111) surfaces He H, Swami N, Koel BE |
38 - 43 |
Effects of homo-epitaxial LaAlO3 layer on microstructural properties of SrTiO3 films grown on LaAlO3 substrates Lu P, Jia QX, Findikoglu AT |
44 - 48 |
Charge transport and trapping in BaTiO3 thin films flash evaporated on Si and SiO2/Si Avila RE, Caballero JV, Fuenzalida VM, Eisele I |
49 - 55 |
High quality ZnS : Mn thin films grown by quasi-rheotaxy for electroluminescent devices Romeo N, Cozzi S, Tedeschi R, Bosio A, Canevari V, Tagliente MA, Penza M |
56 - 62 |
Structural and electrical properties of rf-sputtered RuO2 films having different conditions of preparation Lim WT, Cho KR, Lee CH |
63 - 68 |
KrF laser CVD of titanium oxide from titanium tetraisopropoxide Watanabe A, Imai Y |
69 - 73 |
Ambient-dried SiO2 aerogel thin films and their dielectric application Yang HS, Choi SY, Hyun SH, Park CG |
74 - 78 |
Effects of hydrogen partial pressure on the structure and properties of sputtered silicon layers Achiq A, Rizk R, Gourbilleau F, Voivenel P |
79 - 83 |
Experimental evidence of boron induced charged defects in amorphous silicon materials Caputo D, de Cesare G, Nascetti A, Palma F |
84 - 89 |
The contribution of H+ ion etching during the initial deposition stage to the orientation grade of diamond films Zhang WJ, Jiang X |
90 - 98 |
ZrO2 film growth by chemical vapor deposition using zirconium tetra-tert-butoxide Cameron MA, George SM |
99 - 102 |
Preparation of alumina films from a new sol-gel route Fu Q, Cao CB, Zhu HS |
103 - 113 |
Hard amorphous CSixNy thin films deposited by RF nitrogen plasma assisted pulsed laser ablation of mixed graphite/Si3N4-targets Tharigen T, Lippold G, Riede V, Lorenz M, Koivusaari KJ, Lorenz D, Mosch S, Grau P, Hesse R, Streubel P, Szargan R |
114 - 121 |
Influence of deposition condition and hydrogen on amorphous-to-polycrystalline SiCN films Gong Z, Wang EG, Xu GC, Chen Y |
122 - 129 |
Growth, structure, dielectric and AC conduction properties of solution grown PVA films Shekar BC, Veeravazhuthi V, Sakthivel S, Mangalaraj D, Narayandass SK |
130 - 133 |
The effect of additives on the viscosity of dimethylaluminum hydride and FTIR diagnostics of the gas-phase reaction Lee JH, Park MY, Yun JH, Rhee SW |
134 - 140 |
Electrochromism of anodic oxide film on TiN coating in aqueous and non-aqueous electrolytes Azumi K, Kageyama Y, Seo M, Inokuchi Y |
141 - 144 |
Heteroepitaxy of PbS on porous silicon Levchenko VI, Postnova LI, Bondarenko VP, Vorozov NN, Yakovtseva VA, Dolgyi LN |
145 - 151 |
Properties of titanium oxide film prepared by reactive cathodic vacuum arc deposition Takikawa H, Matsui T, Sakakibara T, Bendavid A, Martin PJ |
152 - 156 |
A galvanostatic study of the electrodeposition of polypyrrole into porous silicon Moreno JD, Marcos ML, Agullo-Rueda F, Guerrero-Lemus R, Martin-Palma RJ, Martinez-Duart JM, Gonzalez-Velasco J |
157 - 164 |
Conduction of metal-isolator-semiconductor structures with granular silicon thin films Pennelli G |
165 - 172 |
Structural and optical properties of sputtered ZnO films Bachari EM, Baud G, Ben Amor S, Jacquet M |
173 - 179 |
Properties of Z and E isomers of azocrown ethers in monolayer assemblies at the air-water interface Zawisza I, Bilewicz R, Luboch E, Biernat JF |
180 - 187 |
Electrical properties of SiO2-(n) GaAs interface on the basis of measurements of MIS structure capacitance and conductance Kochowski S, Nitsch K, Paszkiewicz R |
188 - 195 |
Formation of patterned PbS and ZnS films on self-assembled monolayers Meldrum FC, Flath J, Knoll W |
196 - 201 |
Correlation between the surface morphology and antiphase boundaries in ordered (GaIn)P Sass T, Pietzonka I, Gottschalch V, Wagner G |
202 - 209 |
Influence of lamellae thickness on the corrosion behaviour of multilayered PVD TiN CrN coatings Nordin M, Herranen M, Hogmark S |
210 - 214 |
Effect of silicon addition on microstructure and mechanical property of titanium nitride film prepared by plasma-assisted chemical vapor deposition Park BH, Kim YI, Kim KH |
215 - 221 |
The effects of particle pollution on the mechanical behaviour of multilayered systems Poulingue M, Ignat M, Dijon J |
222 - 226 |
Enhanced optical performance of aluminum films by copper inclusion Kylner C, Mattsson L |
227 - 232 |
Compositional variations of sputter deposited Ti/W barrier layers on substrates with pronounced surface topography Jonsson LB, Hedlund C, Katardjiev IV, Berg S |
233 - 237 |
Magnetic and morphological properties of ultrathin Fe layers in Zr/Fe/Zr trilayer structures Castano FJ, Stobiecki T, Gibbs MRJ, Czapkiewicz M, Wrona J, Kopcewicz M |
238 - 241 |
Frictional properties of poly(N-polyfluoroalkylacrylamides) Langmuir-Blodgett films Fan FQ, Li XD, Miyashita T |
242 - 247 |
Monolayer and Langmuir-Blodgett films of bilirubin dihexadecyl ester Ouyang JM, Li C, Li YQ, Zheng WJ |
248 - 252 |
Electrical energy released from structure of Al polyimide LB film Au Hiro T |
253 - 260 |
c-Axis oriented sol-gel (Pb,Ca)TiO3 ferroelectric thin films on Pt MgO Jimenez R, Calzada ML, Mendiola J |
261 - 265 |
Noble metal additive modulation of gas sensitivity of BaSnO3, explained by a work function based model Reddy CVG, Manorama SV, Rao VJ, Lobo A, Kulkarni SK |
266 - 272 |
NO2 sensor based on InP epitaxial thin layers Battut V, Blanc JP, Goumet E, Souliere V, Monteil Y |
273 - 278 |
Colloidal sol-gel ITO films on tube grown silicon Stoica TF, Stoica TA, Vanca V, Lakatos E, Zaharescu M |
279 - 284 |
Optical properties of film-substrate systems with an anisotropic, spatially varying dielectric function of the surface layer Jungk G, Jahne E |
285 - 293 |
Cu double layer on Mo(110): phase transition van der Merwe JH, Tonsing DL, Stoop PM, Bauer E |
294 - 298 |
Preparation and properties of Bi4Ti3O12 thin films grown at low substrate temperatures Yamaguchi M, Nagatomo T |
299 - 303 |
Properties of reactively sputtered WNx as Cu diffusion barrier Suh BS, Lee YJ, Hwang JS, Park CO |
304 - 311 |
A comparative study of SnO2 and SnO2 : Cu thin films for gas sensor applications Kissine VV, Voroshilov SA, Sysoev VV |
312 - 313 |
Self-assembly of ultrathin composite TiO2/polymer films (vol 337, pg 166, 1999) Kovtyukhova N, Ollivier PJ, Chzhik S, Dubravin A, Buzaneva E, Gorchinskiy A, Marchenko A, Smirnova N |