1 - 7 |
Current induced effects in aluminum thin films Oliva AI, Quintana P, Ceh O, Corona JE, Aguilar M |
8 - 11 |
Interfacial reactions in the thin film Y2O3 on chemically oxidized Si(100) substrate systems Kang SK, Ko DH, Kim EH, Cho MH, Whang CN |
12 - 15 |
Highly oriented ZnO thin films deposited on Ru/Si substrates Lim WT, Lee CH |
16 - 19 |
Microstructure and crystallographic texture of reactively sputtered FeTaN films Klemmer TJ, Inturi V, Minor K, Barnard J, Thomas J, Blachere J |
20 - 24 |
Silicon dots/clusters in silicon nitride: photoluminescence and electron spin resonance Gritsenko VA, Zhuravlev KS, Milov AD, Wong H, Kwok RWM, Xu JB |
25 - 28 |
A study on abnormal electric properties of lead lanthanum titanate thin films caused by excess PbO Song ZT, Ren W, Zhang LY, Yao X, Lin CL |
29 - 32 |
Non-aqueous chemical bath deposition of Sb2S3 thin films Mane RS, Sankapal BR, Lokhande CD |
33 - 39 |
Thermally driven shape instabilities of Nb/Cu multilayer structures: instability of Nb/Cu multilayers Troche P, Hoffmann J, Heinemann K, Hartung F, Schmitz G, Freyhardt HC, Rudolph D, Thieme J, Guttmann P |
40 - 44 |
Surface analysis and phase transition of gel-derived VO2 thin films Lu SW, Hou LS, Gan FX |
45 - 51 |
Growth and characterization of defective diamond films Lee S, Han SY, Oh SG |
52 - 55 |
Epitaxy of (106)-oriented SrBi2Ta2O9 and SrBi2Nb2O9 thin films Nagahama T, Manabe T, Yamaguchi I, Kumagai T, Tsuchiya T, Mizuta S |
56 - 61 |
Direct structure depth profiling of polycrystalline thin films by X-ray diffraction and its application Li B, Tao K, Liu XT, Liao W, Luo J |
62 - 66 |
Structural characterization of epitaxial Cu2Mo6S8 thin films grown on R-cut sapphire by pulsed laser deposition Lemee N, Guilloux-Viry M, Perrin A, Kugler M, Fischer O, Li ZZ, Raffy H |
67 - 71 |
Effect of ligands on crystal structures and optical properties of TiO2 prepared by sol-gel processes Nishide T, Mizukami F |
72 - 78 |
The initial oxidation of epsilon-Fe2N1-x: growth kinetics Graat PCJ, Somers MAJ, Mittemeijer EJ |
79 - 84 |
Excited helium-induced CVD of a-Si1-xCx : H films from trimethylchlorosilane Smirnova TP, Yakovkina LV, Ayupov BM, Dolgpvesova IP, Nadolinny VA, Kitchay VN |
85 - 92 |
Characterization of the interfacial region of epitaxial TlBiSe2 thin films by infrared spectroscopy and transmission electron microscopy Mitsas CL, Polychroniadis EK, Siapkas DI |
93 - 99 |
Simultaneous determination of the optical properties and of the structure of r.f.-sputtered ZnO thin films Dumont E, Dugnoille B, Bienfait S |
100 - 107 |
Chemical bath deposition of indium hydroxy sulphide thin films: process and XPS characterization Bayon R, Mafftiotte C, Herrero J |
108 - 112 |
The effect of catalyzing additives on sol-gel process of formation and on the properties of modified polysiloxane layers Dultsev FN, Vasilyeva LL |
113 - 123 |
SnO2 thin films prepared by ion beam induced CVD: preparation and characterization by X-ray absorption spectroscopy Jimenez VM, Espinos JP, Caballero A, Contreras L, Fernandez A, Justo A, Gonzalez-Elipe AR |
124 - 128 |
New method for making porous SiO2 thin films Liu Y, Ren W, Zhang LY, Yao X |
129 - 136 |
Characterisation of ZnS : Mn thin films by Rietveld refinement of Bragg-Brentano X-ray diffraction patterns Tagliente MA, Penza M, Gusso M, Quirini A |
137 - 143 |
Elastic properties of thin h-BN films investigated by Brillouin light scattering Wittkowski T, Jorzick J, Jung K, Hillebrands B |
144 - 148 |
Fabrication of barium titanate thin films with a high dielectric constant by a sol-gel technique Kumazawa H, Masuda K |
149 - 156 |
Effects of annealing on X-ray-amorphous CVD W-Si-N barrier layer materials Gokce OH, Amin S, Ravindra NM, Szostak DJ, Paff RJ, Fleming JG, Galewski CJ, Shallenberger J, Eby R |
157 - 165 |
Improvement of the thermal stability of amorphous carbon films by incorporation of nitrogen Bai HL, Jiang EY |
166 - 173 |
Structure evolution in Ag/Ni multilayers grown by ultra high vacuum DC magnetron sputtering Sandstrom P, Svedberg EB, Johansson MP, Birch J, Sundgren JE |
174 - 181 |
Effect of diatomic islands on step morphological stability of a terrace edge in molecular beam epitaxy Lin SP, Hwang CC, Chu HS |
182 - 188 |
TEM investigation of wear mechanisms during metal machining Ruppi S, Halvarsson M |
189 - 193 |
Indium doping of amorphous SiC : H films prepared by reactive magnetron co-sputtering Saito N, Inui Y, Yamaguchi T, Nakaaki I |
194 - 200 |
Atomic force microscopy of in situ deformed nickel thin films Coupeau C, Naud JF, Cleymand F, Goudeau P, Grilhe J |
201 - 207 |
Mechanical behaviour of submicron multilayers submitted to microtensile experiments Ignat M, Marieb T, Fujimoto H, Flinn PA |
208 - 213 |
Elastic properties of hydrogen-free amorphous carbon thin films and their relation with carbon-carbon bonding Logothetidis S, Charitidis C |
214 - 217 |
Langmuir-Blodgett films of a new hemicyanine dye Ricceri R, Gabrielli G |
218 - 222 |
Organic light emitting devices containing a highly substituted isoindole or polyisoindole Gauvin S, Santerre F, Dodelet JP, Ding Y, Hlil AR, Hay AS, Anderson J, Armstrong NR, Gorjanc TC, D'Iorio M |
223 - 226 |
Luminescence behavior of Eu(TTFA)(3) doped sol-gel films Hao XP, Fan XP, Wang MQ |
227 - 232 |
Properties of Bi2+xSr2-xCuO6+delta thin films obtained by MBE Salvato M, Salluzzo M, Di Luccio T, Attanasio C, Prischepa SL, Maritato L |
233 - 238 |
Atomic force microscopy study of cytochrome f (Cyt f) and mixed monogalactosyldiacylglycerol (MGDG)/Cyt f Langmuir-Blodgett films Tazi A, Boussaad S, Leblanc RM |
239 - 243 |
Porous freestanding diamond membranes with reduced pore diameter Mammana VP, Silva S, Mansano RD, Verdonck P, Pavani A, Salvadori MC, Brown IG |
244 - 248 |
Dielectric properties of sol-gel derived PZT(40/60)/PZT(60/40) heterolayered thin films Lee SG, Lee YH |
249 - 253 |
Conduction mechanism in plasma polymerized lemongrass oil films Kumar DS, Pillai MGK |
254 - 258 |
Effect of annealing rate on the crystallization process in Ge5Bi18Se77 films Rajagopalan T, Reddy GB |
259 - 263 |
Strong substrate effect in local poling of ultrathin ferroelectric polymer films Chen XQ, Yamada H, Terai Y, Horiuchi T, Matsushige K, Weiss PS |
264 - 273 |
Phase formation behavior and diffusion barrier property of reactively sputtered tantalum-based thin films used in semiconductor metallization Chen GS, Lee PY, Chen ST |
274 - 282 |
Solid phase epitaxy for low pressure chemical vapor deposition Si films induced by ion implantation Chen PS, Hsieh TE, Chu CH |