Thin Solid Films

Thin Solid Films, Vol.369, No.1-2 Entire volume, number list

ISSN: 0040-6090 (Print)

In this Issue (97 articles)

1 - 4	New kinetic growth instabilities in Si(001) homoepitaxy Schelling C, Springholz G, Schaffler F
5 - 9	RHEED analysis of twinned homoepitaxial layers grown on Si(111)root 3x root 3-B Hibino H, Kawamura T, Ogino T
10 - 15	The formation of silicon (111) boron surface phases and their influence on the epitaxial growth of silicon and germanium Schulze J, Baumgartner H, Fink C, Dollinger G, Gentchev I, Gorgens L, Hansch W, Hoster HE, Metzger TH, Paniango R, Stimpel T, Sulima T, Eisele I
16 - 20	Infrared study of adsorption and thermal decomposition of Si2H6 on Si(100) Shinohara M, Niwano M, Neo Y, Yokoo K
21 - 24	Dynamics of surface phase separation on patterned substrates by molecular beam epitaxy Enomoto Y
25 - 28	Ge thin film growth on Si(111) surface using hydrogen surfactant Fujino T, Fuse T, Ryu JT, Inudzuka K, Nakano T, Goto K, Yamazaki Y, Katayama M, Oura K
29 - 32	Formation of the wetting layer in Ge/Si(111) studied by STM and XAFS Rosei F, Motta N, Sgarlata A, Capellini G, Boscherini F
33 - 38	Self-assembling SiGe and SiGeC nanostructures for light emitters and tunneling diodes Eberl K, Schmidt OG, Duschl R, Kienzle O, Ernst E, Rau Y
39 - 42	Step bunching and correlated SiGe nanostructures on Si(113) Brunner K, Zhu J, Abstreiter G, Kienzle O, Ernst F
43 - 48	Strain-driven modification of the Ge/Si growth mode in stacked layers: A way to produce Ge islands having equal size in all layers Le Thanh V, Yam V, Boucaud P, Zheng Y, Bouchier D
49 - 54	Control of the arrangement of self-organized Ge dots on patterned Si(001) substrates Jin G, Liu JL, Luo YH, Wang KL
55 - 59	Control of self-assembling formation of nanometer silicon dots by low pressure chemical vapor deposition Miyazaki S, Hamamoto Y, Yoshida E, Ikeda M, Hirose M
60 - 64	Nanostructures in silicon devices Eisele I, Hansch W
65 - 68	Coulomb charging effect of holes in Ge quantum dots studied by deep level transient spectroscopy Zhang SK, Lu F, Jiang ZM, Wang X
69 - 72	Capacitance-voltage study of single-crystalline Si dots on ultrathin buried SiO2 formed by nanometer-scale local oxidation Ishikawa Y, Kosugi M, Kumezawa M, Tsuchiya T, Tabe M
73 - 78	Analysis of single Si atoms deposited on the Si(111)7x7 surface Uchida H, Watanabe S, Mase M, Kuramochi H, Aono M
79 - 83	RHEED studies of nucleation of Ge islands on Si(001) and optical properties of ultra-small Ge quantum dots Markov VA, Cheng HH, Chia CT, Nikiforov AI, Cherepanov VA, Pchelyakov OP, Zhuravlev KS, Talochkin AB, McGlynn E, Henry MO
84 - 87	Drastic modification of the growth mode of Ge quantum dots on Si by using boron adlayer Takamiya H, Miura M, Usami N, Hattori T, Shiraki Y
88 - 91	Positioning of self-assembling Ge islands on Si(111) mesas by using atomic steps Omi H, Ogino T
92 - 95	Boron-mediated growth of Ge quantum dots on Si(100) substrate Zhou XF, Shi B, Jiang ZM, Jiang WR, Hu DZ, Gong DW, Fana YL, Zhang XJ, Wang X, Li YS
96 - 99	Growth temperature dependence on the formation of carbon-induced Ge quantum dots Kim JY, Ihm SH, Seok JH, Lee CH, Lee YH, Suh EK, Lee HJ
XI - XI	Proceedings of the International Joint Conference on Silicon Epitaxy and Heterostructures (IJC-Si) - 8th International Symposium on Silicon Molecular Beam Epitaxy (Si-MBE8) and 3rd International Symposium on Silicon Heterostructures: From physics to devices (Si-HS3) - 12-17 September, 1999 Miyagi-Zao Royal Hotel, Miyagi, Japan - Preface Yasuda Y, Shiraki Y
100 - 103	Formation of size controlled Ge nanocrystals in SiO2 matrix by ion implantation and annealing Yamamoto M, Koshikawa T, Yasue T, Harima H, Kajiyama K
104 - 107	Formation process and ordering of self-assembled Ge islands Miura M, Hartmann JM, Zhang J, Joyce B, Shiraki Y
108 - 111	Optical investigation of modified Stranski-Krastanov growth mode in the stacking of self-assembled Ge islands Usami N, Shiraki Y
112 - 115	Surface segregation and interdiffusion of Ge on Si(001) studied by medium-energy ion scattering Sumitomo K, Shiraishi K, Kobayashi Y, Ito T, Ogino T
116 - 120	Nucleation and growth of Ge on Si(111) in solid phase epitaxy Suzumura I, Okada M, Muto A, Torige Y, Ikeda H, Sakai A, Zaima S, Yasuda Y
121 - 125	Experimental study of a surfactant-assisted SiGe graded layer and a symmetrically strained Si/Ge superlattice for thermoelectric applications Liu JL, Wang KL, Moore CD, Goorsky MS, Borca-Tasciuc T, Chen G
126 - 129	Formation of relaxed SiGe films on Si by selective epitaxial growth Kawaguchi K, Usami N, Shiraki Y
130 - 133	Epitaxial growth of heavily B-doped SiGe films and interfacial reaction of Ti/B-doped SiGe bilayer structure using rapid thermal processing Okada M, Kamioka H, Matsuo H, Fukuda Y, Zaima S, Kawamura K, Yasuda Y
134 - 137	Effect of Al pre-deposition layer on the epitaxial growth of silicon on Al2O3/Si (111) substrates Ishida M, Jung YC, Miura H, Koji Y, Sawada K, Yoshimoto M, Keisuke M, Takahumi M, Hideaki M
138 - 142	A novel measurement method of segregating adlayers in MBE Oehme M, Bauer M, Grasby T, Kasper E
143 - 147	Characterization of SiGeC thin films by MeV ion scattering and X-ray diffraction Nagaki M, Narusawa T, Hiraki A, Saitoh T, Kubo M
148 - 151	Alternatives to thick MBE-grown relaxed SiGe buffers Hackbarth T, Herzog HJ, Zeuner M, Hock G, Fitzgerald BA, Bulsara M, Rosenblad C, von Kanel H
152 - 156	Relaxed SiGe buffers with thicknesses below 0.1 mu m Bauer M, Lyutovich K, Oehme M, Kasper E, Herzog HJ, Ernst F
157 - 160	In situ characterization of thin Si1-xGex films on Si(100) by spectroscopic ellipsometry Akazawa H
161 - 166	Residual strain and surface roughness of Si1-xGex alloy layers grown by molecular beam epitaxy on Si(001) substrate Tatsuyama C, Asano T, Nakao T, Matada H, Tambo T, Ueba H
167 - 170	Epitaxial growth of Si1-x-yGexCy film on Si(100) in a SiH4-GeH4-CH3SiH3 reaction Ichikawa A, Hirose Y, Ikeda T, Noda T, Fujiu M, Takatsuka T, Moriya A, Sakuraba M, Matsuura T, Murota J
171 - 174	Heteroepitaxial growth of SiGe films and heavy B doping by ion-beam sputtering Sasaki K, Nabetani Y, Miyashita H, Hata T
175 - 181	Relaxed Si0.7Ge0.3 buffer layers grown on patterned silicon substrates for SiGe n-channel HMOSFETs Wohl G, Dudek V, Graf M, Kibbel H, Herzog HJ, Klose M
182 - 184	A novel structure in Ge/Si epilayers grown at low temperature Cheng HH, Chia CT, Markov VA, Guo XJ, Chen CC, Peng YH, Kuan CH
185 - 188	Low-temperature growth of in situ phosphorus-doped silicon films: two-step growth utilizing amorphous silicon buffers Shim KH, Kim HS, Lee JY, Kang JY, Song MK
189 - 194	Atomic layer doping of SiGe - fundamentals and device applications Tillack B, Heinemann B, Knoll D
195 - 198	Ge-induced enhancement of solid-phase crystallization of Si on SiO2 Yamaguchi S, Park S, Sugii N, Nakagawa K, Miyao M
199 - 202	Formation of strained-silicon layer on thin relaxed-SiGe/SiO2/Si structure using SIMOX technology Sugiyama N, Mizuno T, Takagi S, Koike M, Kurobe A
203 - 206	Carrier activation process in As+ implanted relaxed Si1-xGex alloys Irisawa T, Ueno T, Yamaguchi S, Nakagawa K, Miyao M, Shiraki Y
207 - 212	A novel doping technology for ultra-shallow junction fabrication: boron diffusion from boron-adsorbed layer by rapid thermal annealing Kim KS, Song YH, Park KT, Kurino H, Matsuura T, Hane K, Koyanagi M
213 - 216	Factors limiting the composition window for fabrication of SiGe-on-insulator substrate by low-energy oxygen implantation Ishikawa Y, Shibata N, Fukatsu S
217 - 221	Synthesis of SiGeC layers by ion implantation of Ge and C Kurata H, Ohfuti M, Futatsugi T
222 - 225	Segregation and diffusion of impurities from doped Si1-xGex films into silicon Kobayashi S, Aoki T, Mikoshiba N, Sakuraba M, Matsuura T, Murota J
226 - 229	Enhancement of thermal diffusion of delta-doped Sb in SiGe Nakagawa K, Kojima H, Sugii N, Yamaguchi S, Miyao M
230 - 232	Effect of Ge on the P doping in Si gas-source molecular beam epitaxy using Si2H6 and PH3 Hirose F
233 - 239	Epitaxial silicide interfaces in microelectronics Tung RT, Ohmi S
240 - 243	Growth of epitaxial CoSi2 for contacts of ultra-thin SOI MOSFETs Sakamoto K, Maeda T, Hasegawa M
244 - 247	The effect of elevated silicon substrate temperature on TiSi2 formatio from a Ti film Ezoe K, Yamamoto T, Ishii K, Matsumoto S
248 - 252	Growth of beta-FeSi2 and FeSi layers by reactive deposition using Sb-related intermetallic compounds Koga T, Bright A, Suzuki T, Shimada K, Tatsuoka H, Kuwabara H
253 - 256	Growth of Mn doped epitaxial beta-FeSi2 films on Si(001) substrates by reactive deposition epitaxy Takakura K, Suemasu T, Hasegawa F
257 - 264	SiC/Si heteroepitaxial growth Kitabatake M
265 - 268	Initial stage of SiC film growth on Si(111)7x7 and Si(100)2x1 surfaces using C-60 as a precursor studied by STM and HRTEM Suto S, Hu CW, Sato F, Tanaka M, Kasukabe Y, Kasuya A
269 - 272	Gas-source MBE of SiC/Si using monomethylsilane Nakazawa H, Suemitsu M, Asami S
273 - 276	Heteroepitaxial growth of SrO on hydrogen-terminated Si(100) surface Asaoka H, Saiki K, Koma A, Yamamoto H
277 - 280	A study on the local bonding structures of oxidized Si(111) surfaces Sato K, Nakagawa Y, Ikeda H, Zaima S, Yasuda Y
281 - 284	Strain near SiO2-Si interface revealed by X-ray diffraction intensity enhancement Emoto T, Akimoto K, Ishikawa Y, Ichimiya A, Tanikawa A
285 - 288	Non-equilibrium molecular orbital calculations of Si/SiO2 interfaces Schulte J, Ushio J, Maruizumi T
289 - 292	Thermal decomposition pathway of Ge and Si oxides: observation of a distinct difference Prabhakaran K, Maeda F, Watanabe Y, Ogino T
293 - 296	Scanning tunneling microscopy/scanning tunneling spectroscopy of initial nitridation process of Si(100)-2 x 1 surfaces Matsushita D, Ikeda H, Sakai A, Zaima S, Yasuda Y
297 - 305	Si/SiGe/Si pMOS performance - alloy scattering and other considerations Whall TE, Parker EHC
306 - 311	High-speed transport in Si/Si1-x-yGexCy heterostructures Muhlberger M, Schelling C, Sandersfeld N, Seyringer H, Schaffler F
312 - 315	ESR investigations of modulation-doped Si/SiGe quantum wells Sandersfeld N, Jantsch W, Wilamowski Z, Schaffler F
316 - 319	Schottky gating high mobility Si/Si1-xGex 2D electron systems Dunford RB, Griffin N, Paul DJ, Pepper M, Robbins DJ, Churchill AC, Leong WY
320 - 323	Low temperature buffer growth for modulation doped SiGe/Ge/SiGe heterostructures with high hole mobility Ueno T, Irisawa T, Shiraki Y, Uedono A, Tanigawa S
324 - 327	Si/SiGe n-type inverted modulation doping using ion implantation Ahmed A, Dunford RB, Paul DJ, Pepper M, Churchill AC, Robbins DJ, Pidduck AJ
328 - 332	Transport properties of two-dimensional electron gas in a strained-Si/SiGe heterostructure at low carrier densities Hatakeyama T, Tezuka T, Sugiyama N, Kurobe A
333 - 337	Hot carrier transport in modulation doped Si/SiGe and Ge/SiGe heterostructures Madhavi S, Venkataraman V
338 - 341	Experimental evidence of valence band deformation due to strain in inverted hole channel of strained-Si pMOSFETs Tezuka T, Kurobe A, Sugiyama N, Takagi S
342 - 346	Comparison of SiGe and SiGe : C heterojunction bipolar transistors Knoll D, Heinemann B, Ehwald KE, Tillack B, Schley P, Osten HJ
347 - 351	Comparative analysis of minority carrier transport in npn bipolar transistors with Si, Si1-xGex, and Si1-yCy base layers Heinemann B, Knoll D, Fischer GG, Schley P, Osten HJ
352 - 357	Self-aligned selective-epitaxial-growth SiGeHBTs: process, device, and ICs Washio K, Ohue E, Oda K, Hayami R, Tanabe M, Shimamoto H, Masuda T, Ohhata K, Kondo M
358 - 361	Si1-xGex selective epitaxial growth for ultra-high-speed self-aligned HBTs Oda K, Ohue E, Tanabe M, Shimamoto H, Washio K
362 - 365	Limited number of carriers transferred to the strained-Si channel in the SiGe/Si/SiGe modulation-doped field-effect transistor Sugii N, Nakagawa K, Yamaguchi S, Park SK, Miyao M
366 - 370	Doped vs. undoped Si1-x-yGexCy layers in sub-100 nm vertical p-channel MOSFETs Yang M, Sturm JC
371 - 374	Strained Si1-xGex graded channel PMOSFET grown by UHVCVD Su CY, Wu SL, Chang SJ, Chen LP
375 - 378	A self-aligned epitaxially grown channel MOSFET device architecture for strained Si/SiGe systems Leong WY, Churchill AC, Robbins DJ, Glasper JL, Williams GM
379 - 382	Drain leakage current and instability of drain current in Si/Si1-xGex MOSFETs Tsuchiya T, Goto K, Sakuraba M, Matsuura T, Murota J
383 - 386	Optimization of breakdown behaviour and short channel effects in MBE-grown vertical MOS-devices with local channel doping Fink C, Anil KG, Geiger H, Hansch W, Schulze J, Sulima T, Eisele I
387 - 389	A vertical MOS-gated Esaki tunneling transistor in silicon Hansch W, Fink C, Schulze J, Eisele I
390 - 393	Investigation of the emitter structure in SiGe/Si resonant tunneling structures Dehlinger G, Gennser U, Grutzmacher D, Ihn T, Muller E, Ensslin K
394 - 397	Band ordering of the pseudomorphic Si1-xGex/Si heterostructure: the fundamental role of excitons Penn C, Bauer G, Schaffler F, Glutsch S
398 - 401	Photoluminescence characterization of erbium doped Si1-yCy alloys grown by MBE Markmann M, Neufeld E, Brunner K, Abstreiter G, Buchal C
402 - 404	Field-enhanced Stokes shifts in strained Si1-yCy/Si(001) quantum wells Sugawara Y, Fukatsu S, Brunner K, Eberl K
405 - 408	Growth and characterization of Ge-70(n)/Ge-74(n) isotope superlattices Morita K, Itoh KM, Muto J, Mizoguchi K, Usami N, Shiraki Y, Haller EE
409 - 413	Structural and optical properties of Si/Si1-xGex wires Zhuang Y, Schelling C, Stangl J, Penn C, Senz S, Schaffler F, Roch T, Daniel A, Grenzer J, Pietsch U, Bauer G
414 - 418	Light emitting SiGe/i-Si/Si : Er : O tunneling diodes prepared by molecular beam epitaxy Ni WX, Du CX, Duteil F, Pozina G, Hansson GV
419 - 422	Y-branch 1.3/1.55 mu m wavelength demultiplexer based on the plasma dispersion effect Li BJ, Wan JJ, Li GZ, Jiang ZM, Liu EK, Wang X
423 - 425	Anomalous surface absorption band at 1.2 eV in Si1-xGex alloy-based structures Kishimoto Y, Kawamoto K, Fukatsu S
426 - 430	Properties of optically active Si : Er and Si1-xGex layers grown by the sublimation MBE method Stepikhova MV, Andreev BA, Shmagin VB, Krasil'nik ZF, Kuznetsov VP, Shengurov VG, Svetlov SP, Jantsch W, Palmetshofer L, Ellmer H
431 - 435	Optical and structural characterization of Si/SiGe heterostructures grown by RTCVD Sidiki T, Christiansen SH, Chabert S, de Boer WB, Ferrari C, Strunk HP, Torres CMS