4219 - 4236 |
Atmospheric plasmas for thin film deposition: A critical review Merche D, Vandencasteele N, Reniers F |
4237 - 4241 |
Highly c-axis oriented AlN layers grown on c-plane sapphire substrates by radio-frequency sputter epitaxy at 1080 degrees C Mutsukura N, Shinoda H |
4242 - 4248 |
Carbon coatings on silica glass optical fibers studied by reflectance Fourier-transform infrared spectroscopy and focused ion beam scanning electron microscopy Stolov AA, Lombardo JJ, Slyman BE, Li J, Chiu WKS |
4249 - 4253 |
Morphology and crystallization of ThO2 thin films on polycrystalline Ir Bagge-Hansen M, Outlaw RA, Seo K, Manos DM |
4254 - 4258 |
Structural properties of porous silicon/SnO2:F heterostructures Garces FA, Acquaroli LN, Urteaga R, Dussan A, Koropecki RR, Arce RD |
4259 - 4263 |
Growth of heavily doped monocrystalline and polycrystalline SiGe-based quantum dot superlattices Hauser D, Savelli G, Plissonnier M, Montes L, Simon J |
4264 - 4269 |
Nanostructure transition in Cr-C-N coatings deposited by pulsed closed field unbalanced magnetron sputtering Wu ZL, Lin J, Moore JJ, Lei MK |
4270 - 4274 |
Structural and optical properties of heteroepitaxial beta Ga2O3 films grown on MgO (100) substrates Kong LY, Ma J, Luan CN, Mi W, Lv Y |
4275 - 4281 |
Microstructural differences between two Zr(C,N) coatings revealed by analytical transmission electron microscopy Dorfel I, Rooch H, Oster W |
4282 - 4290 |
Influence of spray pyrolysis deposition parameters on the optoelectronic properties of WO3 thin films Bertus LM, Enesca A, Duta A |
4291 - 4296 |
Low-temperature synthesis of ZnO nanorods using organic-inorganic composite as a seed layer Ueno N, Nakanishi K, Ohta T, Egashira Y, Nishiyama N |
4297 - 4301 |
Wet chemical preparation of YVO4:Eu thin films as red-emitting phosphor layers for fully transparent flat dielectric discharge lamp Klausch A, Althues H, Freudenberg T, Kaskel S |
4302 - 4304 |
Optical and structural properties of NiMgO thin films formed by sol-gel spin coating Boutwell RC, Wei M, Scheurer A, Mares JW, Schoenfeld WV |
4305 - 4309 |
Control of aluminum doping of ZnO:Al thin films obtained by high-power impulse magnetron sputtering Tiron V, Sirghi L, Popa G |
4310 - 4313 |
Crystallinity and electrical conductivity of sulfur-containing microcrystalline diamond thin film Nose K, Suwa T, Fujita R, Kamiko M, Mitsuda Y |
4314 - 4320 |
Susceptor-assisted microwave annealing for activation of arsenic dopants in silicon Alford TL, Gadre MJ, Vemuri RNP, Theodore ND |
4321 - 4325 |
Reduction of nanoparticle deposition during fabrication of porous anodic alumina Ding JN, Zhu Y, Yuan NY, Ding GQ |
4326 - 4331 |
Self-assembly of organic acid molecules on the metal oxide surface of a cupronickel alloy Kruszewski KM, Renk ER, Gawalt ES |
4332 - 4338 |
Near-superhydrophobic behavior of multi-walled carbon nanotube thin films Clark MD, Krishnamoorti R |
4339 - 4343 |
Mechanically robust super-oleophobic stamp for direct stamping of silver nanoparticle ink Kim J, Lin PY, Kim WS |
4344 - 4349 |
Diffusion of Cr, Fe, and Ti ions from Ni-base alloy Inconel-718 into a transition alumina coating Dressler M, Nofz M, Dorfel I, Saliwan-Neumann R |
4350 - 4361 |
Nature in corrosion-erosion surface for [TiN/TiAlN]n nanometric multilayers growth on AISI 1045 steel Caicedo JC, Cabrera G, Caicedo HH, Amaya C, Aperador W |
4362 - 4368 |
Spinodal decomposition of Ti0.33Al0.67N thin films studied by atom probe tomography Johnson LJS, Thuvander M, Stiller K, Oden M, Hultman L |
4369 - 4372 |
Nanoindentation and micro-mechanical fracture toughness of electrodeposited nanocrystalline Ni-W alloy films Armstrong DEJ, Haseeb ASMA, Roberts SG, Wilkinson AJ, Bade K |
4373 - 4377 |
Formation and optimization of undercut-microholes in InGaN light emitting diodes by using wet chemical etching Kim HK, Ryu JH, Kim HY, Kang JH, Han N, Park YJ, Ryu BD, Hong CH, Kim HG |
4378 - 4388 |
Raman study of Ni and Ni silicide contacts on 4H-and 6H-SiC Cichon S, Machac P, Barda B, Machovic V, Slepicka P |
4389 - 4393 |
Crystallization and electrical characteristics of Ge1Cu2Te3 films for phase change random access memory Kamada T, Sutou Y, Sumiya M, Saito Y, Koike J |
4394 - 4401 |
Influence of high temperature processing of sol-gel derived barium titanate thin films deposited on platinum and strontium ruthenate coated silicon wafers Stawski TM, Vijselaar WJC, Gobel OF, Veldhuis SA, Smith BF, Blank DHA, ten Elshof JE |
4402 - 4409 |
Ultraporous poly(3,4-ethylenedioxythiophene) for nanometric electrochemical supercapacitor Aradilla D, Estrany F, Armelin E, Aleman C |
4410 - 4417 |
In situ ellipsometric study of copper growth on silicon Haidu F, Gordan OD, Zahn DRT |
4418 - 4421 |
Plasma oxidation of electron beam evaporated cadmium thin films Ali HM, Raaif M |
4422 - 4426 |
An evaluation of depletion layer photoactivity in Cu2ZnSnS4 thin film Sarswat PK, Free ML |
4427 - 4431 |
The OFF to ON switching time and ON state consolidation in write-once-read-many-times memory devices based on doped and undoped carbon-sphere/polymer composites Machado WS, Mamo MA, Coville NJ, Hummelgen IA |
4432 - 4435 |
Optimization of ZnO:Al/Ag/ZnO:Al structures for ultra-thin high-performance transparent conductive electrodes Crupi I, Boscarino S, Strano V, Mirabella S, Simone F, Terrasi A |
4436 - 4438 |
Room-temperature H2S gas sensing properties of carbonized silicon nanoporous pillar array Wang HY, Wang YQ, Chen HY, Li XJ |
4439 - 4444 |
Impact of a-Si:H hydrogen depth profiles on passivation properties in a-Si:H/c-Si heterojunctions Schulze TF, Korte L, Rech B |
4445 - 4448 |
Field-effect transistors of the block co-oligomers based on thiophene and pyridine Haemori M, Itaka K, Yamaguchi J, Kumagai A, Yaginuma S, Fukumoto H, Matsumoto Y, Yamamoto T, Koinuma H |
4449 - 4454 |
Simulation of forward dark current voltage characteristics of tandem solar cells Rubinelli FA |
4455 - 4458 |
Effects of double passivation for optimize DC properties in gamma-gate AlGaN/GaN high electron mobility transistor by plasma enhanced chemical vapor deposition Cho SJ, Wang C, Kim NY |
4459 - 4464 |
Voltammetric detection of bisphenol a by a chitosan-graphene composite modified carbon ionic liquid electrode Wang QX, Wang YH, Liu SY, Wang LH, Gao F, Gao F, Sun W |
4465 - 4469 |
Elaboration of single wall carbon nanotubes-based gas sensors: Evaluating the bundling effect on the sensor performance Ndiaye AL, Varenne C, Bonnet P, Petit E, Spinelle L, Brunet J, Pauly A, Lauron B |
4470 - 4474 |
Growth temperature dependent dielectric properties of BiFeO3 thin films deposited on silica glass substrates Ahmed T, Vorobiev A, Gevorgian S |
4475 - 4481 |
Organometallic tris(8-hydroxyquinoline)aluminum complexes as buffer layers and dopants in inverted organic solar cells Tolkki A, Kaunisto K, Heiskanen JP, Omar WAE, Huttunen K, Lehtimaki S, Hormi OEO, Lemmetyinen H |
4482 - 4485 |
Further work function and interface quality improvement on Al2O3 capped high-k/metal gate p-type metal-oxide-semiconductor field-effect-transistors by incorporation of fluorine Chen YW, Lai CM, Cheng LW, Hsu CH, Hsu CW |
4486 - 4492 |
Orientation-dependent phase separation of GaAsSb epilayers grown by gas-source molecular-beam epitaxy Chen YR, Chou LC, Yang YJ, Lin HH |
4493 - 4496 |
Crossover of magnetoresistance from positive to negative in La0.5Sr0.5CoO3-sigma/Si heterostructure Jin KX, Li H, Wang JY, Tan XY, Zhao SG, Chen CL |
4497 - 4500 |
Properties of TaSiN thin films deposited by reactive radio frequency magnetron sputtering Mesic B, Schroeder H |
4501 - 4505 |
Comparative study of erbium disilicide thin films grown in situ under ultrahigh vacuum or ex situ with a capping layer Reckinger N, Dutu CA, Tang X, Dubois E, Yarekha DA, Godey S, Nougaret L, Laszcz A, Ratajczak J, Raskin JP |
4506 - 4506 |
Electrical properties of BaTiO3 based ferroelectric capacitors grown on oxide sacrificial layers for micro-cantilevers applications (vol 520, pg 3071, 2012) Vasta G, Jackson TJ, Tarte E |