125 - 126 |
Electrophotographic layers of trigonal Se in the binder obtained by reduction of SeO2 by hydrazine Ibragimov NI, Abutalibova ZM, Agaev VG |
127 - 135 |
Electrical explosion of cold thin metal films Marakhtanov MK, Marakhtanov AM |
136 - 140 |
A chemical method for the deposition of Bi2S3 thin films from a non-aqueous bath Mane RS, Sankapal BR, Lokhande CD |
141 - 145 |
Structure and in-depth concentrations in excimer laser irradiated Pb-Co codeposited films Luby S, Majkova E, Jergel M, Senderak R, D'Anna E, Leggieri G, Luches A, Martino M |
146 - 149 |
Preparation of single phase tungsten carbide by annealing of sputtered tungsten-carbon layers Romanus H, Cimalla V, Schaefer JA, Spiess L, Ecke G, Pezoldt J |
150 - 153 |
Thermally stimulated exoelectronic emission of CVD diamond films Briand D, Iacconi P, Benabdesselam M, Lapraz D, Bindi R, May PW, Rego CA, Afzal A |
154 - 159 |
Comparative study of CdS thin films deposited by single, continuous, and multiple dip chemical processes Oladeji IO, Chow L, Liu JR, Chu WK, Bustamante ANP, Fredricksen C, Schulte AF |
160 - 164 |
Microstructure and properties of the CdS thin films prepared by electrostatic spray assisted vapour deposition (ESAVD) method Su B, Choy KL |
165 - 170 |
Annealing effects on the structure and mechanical properties of r.f.-sputtered Cr-B hard thin films Zhou M, Nose M, Makino Y, Nogi K |
171 - 176 |
Relations between the optical properties and the microstructure of TiO2 thin films prepared by ion-assisted deposition Leprince-Wang Y, Souche D, Yu-Zhang K, Fisson S, Vuye G, Rivory J |
177 - 183 |
Optical and mechanical properties of TiO2/SiO2/organically modified silane composite films prepared by sol-gel processing Que WX, Sun Z, Zhou Y, Lam YL, Chan YC, Kam CH |
184 - 187 |
Visible luminescence from photo-chemically etched silicon Yamamoto N, Takai H |
188 - 196 |
A comparative study of oxygen/organosilicon plasmas and thin SiOxCyHz films deposited in a helicon reactor Aumaille K, Vallee C, Granier A, Goullet A, Gaboriau F, Turban G |
197 - 202 |
Characterization of silicon oxynitride films by grazing-emission X-ray fluorescence spectrometry Monaghan ML, Nigam T, Houssa M, De Gendt S, Urbach HP, de Bokx PK |
203 - 209 |
Surface roughness of pyrolytic tin dioxide films evaluated by different methods Niklasson GA, Ronnow D, Mattsson MS, Kullman L, Nilsson H, Roos A |
210 - 214 |
Cracking and residual stress in hybrid coatings on float glass Malzbender J, de With G |
215 - 220 |
Control of microstructure coarsening of a Ti substrate during diamond film deposition using Ar/H-2/CH4 gas mixture Fu YQ, Loh NL, Yan BB, Sun CQ, Hing P |
221 - 227 |
Stress, porosity measurements and corrosion behaviour of AlN films deposited on steel substrates Vacandio F, Massiani Y, Gergaud P, Thomas O |
228 - 235 |
Hardness measurements of Ti and TiC multilayers: a model Chicot D, Benarioua Y, Lesage J |
236 - 238 |
A study of Si1-xGex/Si quantum-well intermixing by photocurrent spectroscopy Li C, Yang QQ, Chen YH, Wang HJ, Wang JZ, Yu JZ, Wang QM |
239 - 243 |
Preparation of conducting layers of substituted polyacetylenes by solid-phase polymerization of Langmuir-Blodgett layers Dultsev FN, Repinsky SM, Sveshnikova LL |
244 - 250 |
Investigation of annealing effects on indium tin oxide thin films by electron energy loss spectroscopy Zhu FR, Huan CHA, Zhang KR, Wee ATS |
251 - 254 |
Fine trimming of SmS film resistance by XeCl laser ablation Miodushevsky P, Protopapa ML, De Tomasi F, Perrone MR, Tundo S, Vasanelli L |
255 - 260 |
Material characterization of Cu(Ti)-polyimide thin film stacks Kondoh E |
261 - 267 |
Oxidation, grain growth and reflow characteristics of copper thin films prepared by chemical vapor deposition Lee SY, Choi SH, Park CO |
268 - 274 |
Solid-phase crystallization of hydrogenated amorphous silicon/hydrogenated microcrystalline silicon bilayers deposited by plasma-enhanced chemical vapor deposition Park CD, Kim HY, Cho MH, Jan KJ, Lee JY |
275 - 282 |
Plasma deposition of amorphous carbon films on copper Chiu S, Turgeon S, Terreaul B, Sarkissian A |
283 - 287 |
The structure of thin Cr film prepared by the vacuum evaporation method Kaito C, Nakamura H, Kimura S, Kimura Y, Nakada T, Saito Y |
288 - 292 |
The atomic displacements on surface generated by low-energy projectile Ma ZQ, Kido Y |
294 - 294 |
Effect of diatomic islands on step morphological stability of a terrace edge in molecular beam epitaxy (vol 353, pg 174, 1999) Lin SP, Hwang CC, Chu HS |