133 - 136 |
Preparation of large uniform amorphous silicon films by VHF-PECVD using a ladder-shaped antenna Takeuchi Y, Nawata Y, Ogawa K, Serizawa A, Yamauchi Y, Murata M |
137 - 141 |
In situ spectroscopic ellipsometry of carbon nucleation and growth on Si in a deposition process by DC glow discharge of methane Moritani A, Kitahara K, Kitamura T, Katayama H, Kanayama N, Suzuki M |
142 - 146 |
Electron-beam excited plasma etching reactor with polyimide interface film Morita S, Phatak GJ, Mori Y |
147 - 151 |
Role of perovskite-type metal oxides on atmospheric pressure non-equilibrium plasma generation Kiyokawa K, Sugiyama K, Tomimatsu M, Kurokawa H, Miura H |
152 - 159 |
Investigation of ECR plasma uniformity from the point of view of production and confinement Itagaki N, Yoshizawa T, Ueda Y, Kawai Y |
160 - 164 |
Inductively coupled plasma application to the resist ashing Takagi K, Ikeda A, Fujimura T, Kuroki Y |
165 - 172 |
Properties predictions of different mixed-gas induction plasmas by pulse modulated approach Paul KC, Sakuta T |
173 - 176 |
Applications of TiO2 film for environmental purification deposited by controlled electron beam-excited plasma Ikezawa S, Homyara H, Kubota T, Suzuki R, Koh S, Mutuga F, Yoshioka T, Nishiwaki A, Ninomiya Y, Takahashi M, Baba K, Kida K, Hara T, Famakinwa T |
177 - 182 |
Dependence of sintering temperatures of the BaTiO3 pellets on N2O generation characteristics in a packed-bed plasma reactor Kawasaki T, Kanazawa S, Ohkubo T, Mizeraczyk J, Nomoto Y |
183 - 188 |
Melting municipal solid waste incineration residue by plasma melting furnace with a graphite electrode Katou K, Asou T, Kurauchi Y, Sameshima R |
189 - 194 |
Application of radio-frequency thermal plasmas to treatment of fly ash Sakano M, Tanaka M, Watanabe T |
195 - 199 |
An investigation on pulse discharge effect on the surface chemical transformation of fly ash Zhou YX, Nifuku M, Hajos G, Asada S, Katoh H |
200 - 203 |
Ozone, ammonia and NOx destruction in corona discharge tubes coated with ozone catalyst Kogoma M, Okazaki S, Tanaka K, Inomata T |
204 - 207 |
Plasma-induced degradation of aniline in aqueous solution Tezuka M, Iwasaki M |
208 - 212 |
Development of powder antifoamer by atmospheric pressure glow plasma Nakajima T, Tanaka K, Inomata T, Kogoma M |
213 - 216 |
Zirconia coating on amorphous magnetic powder by atmospheric pressure glow plasma Ogawa S, Takeda A, Oguchi M, Tanaka K, Inomata T, Kogoma M |
217 - 221 |
Improvement in adhesive strength of fluorinated polymer films by atmospheric pressure glow plasma Tanaka K, Inomata T, Kogoma M |
222 - 226 |
Apatite/titanium composite coatings on titanium or titanium alloy by RF plasma-spraying process Inagaki M, Yokogawa Y, Kameyama T |
227 - 232 |
Coating of superplastic Ti-alloy substrates with Ti and Ti-O films by magnetron DC sputtering Sonoda T, Watazu A, Zhu J, Kamiya A, Nonami T, Kameyama T, Naganuma K, Kato M |
233 - 238 |
Production of ultrafine titanium dioxide by DC plasma jet Oh SM, Park DW |
239 - 242 |
Temporal characteristics of net excitation rates in inductively coupled plasma in Ar and CF4 by one-dimensional relaxation continuum modeling Hou K, Nakagarni S, Makabe T |
243 - 247 |
Development of a compact nitrogen radical source by helicon-wave discharge employing a permanent magnet Sasaki K, Kokubu H, Hayashi D, Kadota K |
248 - 251 |
Electron temperature and ion energy control in modified magnetron-typed RF discharge Shimizu T, Kato K, Li Y, Iizuka S, Sato N |
252 - 255 |
In situ surface analysis by infrared reflection absorption spectroscopy in PECVD of silicon-oxide films Inoue Y, Sugimura H, Takai O |
256 - 260 |
Optical emission spectroscopy study toward high rate growth of microcrystalline silicon Fukuda Y, Sakuma Y, Fukai C, Fujimura Y, Azuma K, Shirai H |
261 - 266 |
Low temperature formation of microcrystalline silicon films using high-density SiH4 microwave plasma Sakuma Y, Liu HP, Shirai H, Moriya Y, Ueyama H |
267 - 270 |
Effect of insertion of thin ZnO layer in transparent conductive ZnO : Al film Tominaga K, Murayama T, Mori I, Ushiro T, Moriga T, Nakabayashi I |
271 - 275 |
Characterization of(Ti,Al)N films deposited by pulsed d.c. plasma-enhanced chemical vapor deposition Kawata K, Sugimura H, Takai O |
276 - 280 |
Effect of substrate bias on AlN thin film preparation in shielded reactive vacuum are deposition Takikawa H, Kimura K, Miyano R, Sakakibara T, Bendavid A, Martin PJ, Matsumuro A, Tsutsumi K |
281 - 285 |
Properties of V2O5 thin films deposited by means of plasma MOCVD Watanabe H, Itoh K, Matsumoto O |
286 - 290 |
Production of fluorinated fullerene film by a CF4 RF plasma Yang SC, Mieno T |
291 - 294 |
Production of Nb thin film by ECR sheet plasma Shibata K, Ito H, Yugami N, Miyazaki T, Nishida Y |
295 - 299 |
Pulsed plasma processing of organic compounds in aqueous solution Sugiarto AT, Sato M |
300 - 304 |
Application of microscale plasma to material processing Ito T, Izaki T, Terashima K |
305 - 309 |
Plasma surface treatment of Nb-doped SrTiO3(100) studied by scanning tunneling microscopy Kawasaki H, Yamaguchi N, Terashima K |
VII - VII |
Proceedings of the 12th Symposium on Plasma Science for Materials (SPSM-12) Tokyo, Japan, 16-17 June 1999 - Preface Teii S, Oda T, Yoshida Y, Terashima K |